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Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification

School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China
School of Engineering, University of Edinburgh, Edinburgh EH9 3FF, UK
Author to whom correspondence should be addressed.
Micromachines 2018, 9(8), 390;
Received: 4 July 2018 / Revised: 29 July 2018 / Accepted: 1 August 2018 / Published: 6 August 2018
PDF [4899 KB, uploaded 6 August 2018]


This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floating metallic membrane. Comparing the proposed high-capacitance-ratio MEMS switch with the ones in available literature, an acceptable insertion loss insulation, acceptable response time and high capacitance ratio (383.8) are achieved. View Full-Text
Keywords: RF MEMS; high-capacitance-ratio; metal-insulator-metal RF MEMS; high-capacitance-ratio; metal-insulator-metal

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Han, K.; Guo, X.; Smith, S.; Deng, Z.; Li, W. Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification. Micromachines 2018, 9, 390.

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