Search Results (121)

This research investigates resonator width optimization for simultaneously enhancing electrical performance and mechanical reliability in wideband RF MEMS filters through systematic evaluation of three configurations: 0% (L1), 60% (L2), and 100% (L3) matching ratios between cap and bottom wafers using Au-Au thermocompression bonding. The study demonstrates that resonator width alignment significantly influences both electromagnetic field coupling and bonding interface integrity. The L3 configuration with complete width matching achieved optimal RF performance, demonstrating 3.34 dB insertion loss across 4.5 GHz bandwidth (25% fractional bandwidth), outperforming L2 (3.56 dB) and L1 (3.10 dB), while providing enhanced electromagnetic wave coupling and minimized contact resistance. Mechanical reliability testing revealed superior bonding strength for the L3 configuration, withstanding up to 7.14 Kgf in shear pull tests, significantly exceeding L1 (4.22 Kgf) and L2 (2.24 Kgf). SEM analysis confirmed uniform bonding interfaces with minimal void formation (~180 nm), while Q-factor measurements showed L3 achieved optimal loaded Q-factor (Q_L = 3.31) suitable for wideband operation. Comprehensive environmental testing, including thermal cycling (−50 °C to +145 °C) and humidity exposure per MIL-STD-810E standards, validated long-term stability across all configurations. This investigation establishes that complete resonator width matching between cap and bottom wafers optimizes both electromagnetic performance and mechanical bonding reliability, providing a validated framework for developing high-performance, reliable RF MEMS devices for next-generation communication, radar, and sensing applications. Full article

This paper presents the first demonstration and comparison of two identical oscillator circuits employing piezoelectric zinc oxide (ZnO) microelectromechanical systems (MEMS) resonators, implemented on conventional printed-circuit-board (PCB) and three-dimensional (3D)-printed acrylonitrile butadiene styrene (ABS) substrates. Both oscillators operate simultaneously at dual frequencies (260 MHz and 437 MHz) without the need for additional circuitry. The MEMS resonators, fabricated on silicon-on-insulator (SOI) wafers, exhibit high-quality factors (Q), ensuring superior phase noise performance. Experimental results indicate that the oscillator packaged using 3D-printed chip-carrier assembly achieves a 2–3 dB improvement in phase noise compared to the PCB-based oscillator, attributed to the ABS substrate’s lower dielectric loss and reduced parasitic effects at radio frequency (RF). Specifically, phase noise values between −84 and −77 dBc/Hz at 1 kHz offset and a noise floor of −163 dBc/Hz at far-from-carrier offset were achieved. Additionally, the 3D-printed ABS-based oscillator delivers notably higher output power (4.575 dBm at 260 MHz and 0.147 dBm at 437 MHz). To facilitate modular characterization, advanced packaging techniques leveraging precise 3D-printed encapsulation with sub-100 μm lateral interconnects were employed. These ensured robust packaging integrity without compromising oscillator performance. Furthermore, a comparison between two transistor technologies—a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) and an enhancement-mode pseudomorphic high-electron-mobility transistor (E-pHEMT)—demonstrated that SiGe HBT transistors provide superior phase noise characteristics at close-to-carrier offset frequencies, with a significant 11 dB improvement observed at 1 kHz offset. These results highlight the promising potential of 3D-printed chip-carrier packaging techniques in high-performance MEMS oscillator applications. Full article

In the rapidly advancing digital era, the demand for miniaturized and high-performance electronic devices is increasing, particularly in applications such as wireless communication, unmanned aerial vehicles, and healthcare devices. Radio-frequency microelectromechanical systems (RF MEMS), particularly RF MEMS switches, play a crucial role in enhancing RF performance by providing low-loss, high-isolation switching and precise signal path control in reconfigurable RF front-end systems. Among different configurations, electrothermally actuated bistable lateral RF MEMS switches are preferred for their energy efficiency, requiring power only during transitions. This paper presents a novel approach to improve the RF performance of such a switch through structural modifications and machine learning (ML)-driven optimization. To enable efficient high-frequency operation, the H-clamp structure was re-engineered into various lateral configurations, among which the I-clamp exhibited superior RF characteristics. The proposed I-clamp switch was optimized using an eXtreme Gradient Boost (XGBoost) ML model to predict optimal design parameters while significantly reducing the computational overhead of conventional EM simulations. Activation functions were employed within the ML model to improve the accuracy of predicting optimal design parameters by capturing complex nonlinear relationships. The proposed methodology reduced design time by 87.7%, with the optimized I-clamp switch achieving −0.8 dB insertion loss and −70 dB isolation at 10 GHz. Full article

Micro-Electro-Mechanical System (MEMS) technology is employed to fabricate surface acoustic wave (SAW)-type and resistive-type ozone sensors on quartz glass (SiO₂) substrates. The fabrication process commences by using a photolithography technique to define interdigitated electrodes (IDEs) on the substrates. Electron-beam evaporation (EBE) followed by radio frequency (RF) magnetron sputtering is then used to deposit platinum (Pt) and chromium (Cr) electrode layers as well as a zinc oxide (ZnO) sensing layer, respectively. Finally, annealing is performed to improve the crystallinity and sensing performance of the ZnO films. The experimental results reveal that the ZnO thin films provide an excellent ozone-concentration sensing capability in both sensors. The SAW-type sensor demonstrates a peak sensitivity at a frequency of 200 kHz, with a rapid response time of just 35 s. Thus, it is suitable for applications requiring a quick response and high sensitivity, such as real-time monitoring and high-precision environmental detection. The resistive-type sensor shows optimal sensitivity at a relatively low operating temperature of 180 °C, but has a longer response time of approximately 103 s. Therefore, it is better suited for low-cost and large-scale applications such as industrial-gas-concentration monitoring. Full article

This paper proposes a detailed design study of resonating high-frequency notch filters driven by RF MEMS switches and their optimization for dual-band operation in the X-Band. Microstrip configurations will be considered for single and dual-band applications. An SPDT (single-pole-double-thru) switch composed of double-clamped ohmic microswitches has been introduced to connect triangular resonators with Sierpinski geometry, symmetrically placed with respect to a microstrip line to obtain a dual notch response. Close frequencies or spans as wide as 2 GHz can be obtained depending on the internal complexity and the edge side. The internal complexity has been modified to introduce the possibility of using the same edge size for the frequency tuning of an elementary cell, maintaining a fixed footprint, and allowing coupled structures to implement high-frequency filters of the same size and variable operational frequencies. Preliminary experimental results have been obtained as a confirmation of the predicted device functionality. Full article

Radio Frequency Micro Electro Mechanical Systems (RF MEMS) are devices showing exceptional potential to satisfy the demands of emerging RF electronic technologies, including those considered for high-power applications, such as for long distance communication systems. Operation in this regime requires an alternative way of thinking for these devices and, for example, a more accurate control of the pull-in voltage is of major importance due to the self-actuation effect. Therefore, the studies focusing on the features of the moving bridges are of great importance. This work presents the fabrication of a full family of RF MEMS switches suitable for high-power implementations having bridges deposited by Au electroplating and released using purely standard wet processes, as well as a carefully designed experimental study of their pull-in voltage. Depositing the bridge of the high-power RF MEMS by using only a single electroplating step makes the device fabrication easier, whilst the utilization of a purely wet release process is an asset. This method relies on low temperature processes, applicable simultaneously in bridges with various geometrical and perforation details without the need of any specialised infrastructure. The experimentally obtained results suggest that for this technology the bridge thickness is a critical factor for controlling the pull-in characteristics between devices fabricated in the same run. Moreover, it is revealed that for thicker bridges, geometry and hole perforation effects are more pronounced. This technology is therefore suitable for developing RF MEMS where the bridge thickness could be potentially utilized for enabling optimization engineering between devices that should be fabricated in the same run but need to satisfy diverse specifications during their operation. Full article

A geometrical reconfigurable structure based on RF Micro-electro-mechanical switches (RF-MEMS) is proposed in this work. The structure is composed of an array of gold metallic patches interconnected together utilizing RF-MEMS switches in order to change its geometry and, consequently, the scattering parameters. In particular, the reconfigurability is achieved by activating multiple RF-MEMS switches, which enables the change in electrical length and, consequently, the resonance frequency of the structure. As a proof of concept, an experimental antenna prototype composed of an array of $7\times 7$ elements interconnected by a set of RF-MEMS switches has been designed, fabricated numerically, and experimentally assessed. The structure can be set as an antenna or as other basic radio frequency components. The obtained experimental results are in good agreement with the simulations, with an error of less than $5\%$ for the considered radiating structures. The quite promising results demonstrate the potential and flexibility of the proposed structure. Full article

This paper presents a three-channel reconfigurable step attenuator based on radio frequency (RF) microelectromechanical system (MEMS) switches, in response to the current issues of high insertion loss and low attenuation accuracy of attenuators. The coplanar waveguide (CPW), cross-shaped power dividers, RF MEMS switches, and π-type attenuation resistor networks are designed as a basic unit of the attenuator. The attenuator implemented attenuation of 0~30 dB at 5 dB intervals in the frequency range of 1~25 GHz through two basic units. The results show that the insertion loss is less than 1.41 dB, the attenuation accuracy is better than 2.48 dB, and the geometric size is 2.4 mm × 4.0 mm × 0.7 mm. The attenuator can be applied to numerous fields such as radar, satellites, aerospace, electronic communication, and so on. Full article

This study investigates a hybrid microelectromechanical system (MEMS) acoustic resonator through a hybrid approach to combine capacitive and piezoelectric transduction mechanisms, thus harnessing the advantages of both transducer technologies within a single device. By seamlessly integrating both piezoelectric and capacitive transducers, the newly designed hybrid resonators mitigate the limitations of capacitive and piezoelectric resonators. The unique hybrid configuration holds promise to significantly enhance overall device performance, particularly in terms of quality factor (Q-factor), insertion loss, and motional impedance. Moreover, the dual-transduction approach improves the signal-to-noise ratio and reduces feedthrough noise levels at higher frequencies. In this paper, the detailed design, complex fabrication processes, and thorough experimental validation are presented, demonstrating substantial performance enhancement potentials. A hybrid disk resonator with a single side-supporting anchor achieved an outstanding loaded Q-factor higher than 28,000 when operating under a capacitive drive and piezoelectric sense configuration. This is comparably higher than the measured Q-factor of 7600 for another disk resonator with two side-supporting anchors. The hybrid resonator exhibits a high Q-factor at its resonance frequency at 20 MHz, representing 2-fold improvement over the highest reported Q-factor for similar MEMS resonators in the literature. Also, the dual-transduction approach resulted in a more than 30 dB improvement in feedthrough suppression for devices with a 500 nm-thick ZnO layer, while hybrid resonators with a thicker piezoelectric layer of 1300 nm realized an even greater feedthrough suppression of more than 50 dB. The hybrid resonator integration strategy discussed offers an innovative solution for current and future advanced RF front-end applications, providing a versatile platform for future innovations in on-chip resonator technology. This work has the potential to lead to advancements in MEMS resonator technology, facilitating some significant improvements in multi-frequency and frequency agile RF applications through the original designs equipped with integrated capacitive and piezoelectric transduction mechanisms. The hybrid design also results in remarkable performance metrics, making it an ideal candidate for integrating next-generation wireless communication devices where size, cost, and energy efficiency are critical. Full article

Due to its excellent electrical performance, mechanical reliability, and thermal stability, electroplated gold is still the most commonly used material for movable beams in RF MEMS switches. This paper investigates the influence of process conditions on the quality and growth rate of gold electroplating, and the optimized process parameters for the gold electroplating process are obtained. The characterization of the optimized electroplated gold layer shows that it has small surface roughness and excellent thermal stability. With this optimized gold electroplating process, the RF MEMS switches are fabricated and hermetic packaged. In order to obtain the temperature environment adaptability of the packaged switch, the influence of working temperature is studied. The temperature effects on mechanical performance (includes pull-in voltage and lifetime) and RF performance (includes insertion loss and isolation) are revealed. Full article

A novel stress suppression design for flexible RF MEMS switches has been presented and demonstrated through theoretical and experimental research to isolate the stress caused by substrate bending. An RF MEMS switch with an S-shaped microspring structure was fabricated by the two-step etching process as a developmental step toward miniaturization and high reliability. The RF MEMS switches with an S-shaped microspring exhibited superior microwave performance and stable driving voltage under different substrate curvatures compared to the conventional non-microspring switches, demonstrating that the bending stress is successfully suppressed by the S-shaped microspring and the island structure. Furthermore, this innovative design could be easily extended to other flexible devices. Full article

This study presents the design and simulation of an RF MEMS variable capacitor with a high tuning ratio and high linearity factor of capacitance–voltage response. An electrostatic torsion actuator with planar and non-planar structures is presented to obtain the high tuning ratio by avoiding the occurrence of pull-in point. In the proposed design, the capacitor plate is connected to the electrostatic actuators by using the s-shaped beam. The proposed design shows a 138% tuning ratio with the planar structure of the actuator and 167% tuning ratio by implementing the non-planar structure. A linearity factor of 99% is attained by adjusting the rates at which the capacitor plate rises as the actuation voltage increases and the rate at which the capacitance decreases as the plate rises. Parametric optimization of the design is performed by utilizing the finite element method (FEM) analysis and high-frequency structural simulator (HFSS) analysis to obtain an optimized high-tuning ratio RF MEMS varactor at low actuation voltage. S-parameters of the design are presented on HFSS, with a 50 ohm coplanar waveguide (CPW) serving as the transmission line. The proposed RF MEMS varactor can be utilized in tunable RF devices. Full article

In this paper, different concepts of reconfigurable RF-MEMS attenuators for beamforming applications are proposed and critically assessed. Capitalizing on the previous part of this work, the 1-bit attenuation modules featuring series and shunt resistors and low-voltage membranes (7–9 V) are employed to develop a 3-bit attenuator for fine-tuning attenuations (<−10 dB) in the 24.25–27.5 GHz range. More substantial attenuation levels are investigated using fabricated samples of coplanar waveguide (CPW) sections equipped with Pi-shaped resistors aiming at attenuations of −15, −30, and −45 dB. The remarkable electrical features of such configurations, showing flat attenuation curves and limited return losses, and the investigation of a switched-line attenuator design based on them led to the final proposed concept of a low-voltage 24-state attenuator. Such a simulated device combines the Pi-shaped resistors for substantial attenuations with the 3-bit design for fine-tuning operations, showing a maximum attenuation level of nearly −50 dB while maintaining steadily flat attenuation levels and limited return losses (<−11 dB) along the frequency band of interest. Full article

This paper introduces a broadband triple-pole triple-throw (3P3T) RF MEMS switch with a frequency range from DC to 380 GHz. The switch achieves precise signal control and efficient modulation through its six-port design. It achieves an insertion loss of −0.66 dB across its frequency range, with isolation and return loss metrics of −32 dB and −15 dB, respectively. With its low actuation voltage of 6.8 V and rapid response time of 2.28 μs, the switch exemplifies power-efficient and prompt switching performance. The compact design is ideal for integration into space-conscious systems. This switch is pivotal for 6G research and has potential applications in satellite communications, military radar systems, and next-generation radio applications that require multi-antenna access. Full article