Ding, Y.; Xue, K.; Zhang, J.; Yan, L.; Li, Q.; Yao, Y.; Zhou, L.
Two-Dimensional Octuple-Atomic-Layer M2Si2N4 (M = Al, Ga and In) with Long Carrier Lifetime. Micromachines 2023, 14, 405.
https://doi.org/10.3390/mi14020405
AMA Style
Ding Y, Xue K, Zhang J, Yan L, Li Q, Yao Y, Zhou L.
Two-Dimensional Octuple-Atomic-Layer M2Si2N4 (M = Al, Ga and In) with Long Carrier Lifetime. Micromachines. 2023; 14(2):405.
https://doi.org/10.3390/mi14020405
Chicago/Turabian Style
Ding, Yimin, Kui Xue, Jing Zhang, Luo Yan, Qiaoqiao Li, Yisen Yao, and Liujiang Zhou.
2023. "Two-Dimensional Octuple-Atomic-Layer M2Si2N4 (M = Al, Ga and In) with Long Carrier Lifetime" Micromachines 14, no. 2: 405.
https://doi.org/10.3390/mi14020405
APA Style
Ding, Y., Xue, K., Zhang, J., Yan, L., Li, Q., Yao, Y., & Zhou, L.
(2023). Two-Dimensional Octuple-Atomic-Layer M2Si2N4 (M = Al, Ga and In) with Long Carrier Lifetime. Micromachines, 14(2), 405.
https://doi.org/10.3390/mi14020405