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Article

Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

Department of Micro- and Nanoelectronics, Faculty of Electronics, Saint Petersburg Electrotechnical University “LETI”, 5a Professor Popov St., Building 5, 197376 Saint Petersburg, Russia
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Author to whom correspondence should be addressed.
Academic Editors: Asal Kiazadeh and Emanuel Carlos
Micromachines 2022, 13(1), 98; https://doi.org/10.3390/mi13010098
Received: 17 December 2021 / Revised: 30 December 2021 / Accepted: 6 January 2022 / Published: 8 January 2022
The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiOx films (30 nm) and bilayer TiO2/Al2O3 structures (60 nm/5 nm) is demonstrated. View Full-Text
Keywords: memristor; thin metal oxide films; compact model memristor; thin metal oxide films; compact model
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MDPI and ACS Style

Ryndin, E.; Andreeva, N.; Luchinin, V. Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors. Micromachines 2022, 13, 98. https://doi.org/10.3390/mi13010098

AMA Style

Ryndin E, Andreeva N, Luchinin V. Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors. Micromachines. 2022; 13(1):98. https://doi.org/10.3390/mi13010098

Chicago/Turabian Style

Ryndin, Eugeny, Natalia Andreeva, and Victor Luchinin. 2022. "Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors" Micromachines 13, no. 1: 98. https://doi.org/10.3390/mi13010098

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