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Open AccessArticle

Influence of Illumination on Porous Silicon Formed by Photo-Assisted Etching of p-Type Si with a Different Doping Level

Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (MIET), Moscow 124498, Russia
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Micromachines 2020, 11(2), 199; https://doi.org/10.3390/mi11020199
Received: 9 January 2020 / Revised: 12 February 2020 / Accepted: 12 February 2020 / Published: 14 February 2020
(This article belongs to the Special Issue 2D Nanomaterials Processing and Integration in Miniaturized Devices)
The influence of illumination intensity and p-type silicon doping level on the dissolution rate of Si and total current by photo-assisted etching was studied. The impact of etching duration, illumination intensity, and wafer doping level on the etching process was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), and Ultraviolet-Visible Spectroscopy (UV–Vis–NIR). The silicon dissolution rate was found to be directly proportional to the illumination intensity and inversely proportional to the wafer resistivity. High light intensity during etching treatment led to increased total current on the Si surface. It was shown that porous silicon of different thicknesses, pore diameters, and porosities can be effectively fabricated by photo-assisted etching on a Si surface without external bias or metals.
Keywords: photo-assisted etching; porous silicon; illumination; doping level; total current; reflectance photo-assisted etching; porous silicon; illumination; doping level; total current; reflectance
MDPI and ACS Style

Volovlikova, O.; Gavrilov, S.; Lazarenko, P. Influence of Illumination on Porous Silicon Formed by Photo-Assisted Etching of p-Type Si with a Different Doping Level. Micromachines 2020, 11, 199.

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