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Open AccessArticle

Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer

by Shengran Cai 1,2, Wei Li 3, Hongshuo Zou 1,2, Haifei Bao 1,2, Kun Zhang 1,2, Jiachou Wang 1,2, Zhaohui Song 1,2 and Xinxin Li 1,2,3,*
1
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
2
School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
3
College of Life Sciences, Shanghai Normal University, Shanghai 200234, China
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(4), 227; https://doi.org/10.3390/mi10040227
Received: 18 February 2019 / Revised: 19 March 2019 / Accepted: 26 March 2019 / Published: 29 March 2019
(This article belongs to the Special Issue 10th Anniversary of Micromachines)
In this paper, a monolithic tri-axis piezoresistive high-shock accelerometer has been proposed that has been single-sided fabricated in a single (111)-silicon wafer. A single-cantilever structure and two dual-cantilever structures are designed and micromachined in one (111)-silicon chip to detect Z-axis and X-/Y-axis high-shock accelerations, respectively. Unlike the previous tri-axis sensors where the X-/Y-axis structure was different from the Z-axis one, the herein used similar cantilever sensing structures for tri-axis sensing facilitates design of uniform performance among the three elements for different sensing axes and simplifies micro-fabrication for the multi-axis sensing structure. Attributed to the tri-axis sensors formed by using the single-wafer single-sided fabrication process, the sensor is mechanically robust enough to endure the harsh high-g shocking environment and can be compatibly batch-fabricated in standard semiconductor foundries. After the single-sided process to form the sensor, the untouched chip backside facilitates simple and reliable die-bond packaging. The high-shock testing results of the fabricated sensor show linear sensing outputs along X-/Y-axis and Z-axis, with the sensitivities (under DC 5 V supply) as about 0.80–0.88 μV/g and 1.36 μV/g, respectively. Being advantageous in single-chip compact integration of the tri-axis accelerometers, the proposed monolithic tri-axis sensors are promising to be embedded into detection micro-systems for high-shock measurement applications. View Full-Text
Keywords: piezoresistance; single-side micromachining; monolithic integration; tri-axis sensors; high-shock accelerometers piezoresistance; single-side micromachining; monolithic integration; tri-axis sensors; high-shock accelerometers
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MDPI and ACS Style

Cai, S.; Li, W.; Zou, H.; Bao, H.; Zhang, K.; Wang, J.; Song, Z.; Li, X. Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer. Micromachines 2019, 10, 227.

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