Next Article in Journal
Biomimetic Anti-Adhesive Surface Microstructures on Electrosurgical Blade Fabricated by Long-Pulse Laser Inspired by Pangolin Scales
Next Article in Special Issue
A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure
Previous Article in Journal
Advanced Polymers for Three-Dimensional (3D) Organ Bioprinting
Previous Article in Special Issue
Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Micromachines
Volume 10
Issue 12
10.3390/mi10120815
micromachines-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss

by
Hong-kai Mao
1,
Ying Wang
1,*,
Xue Wu
2 and
Fang-wen Su
1
1
The Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China
2
National Key Laboratory of Analog Integrated Circuits, Chongqing 400060, China
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(12), 815; https://doi.org/10.3390/mi10120815
Submission received: 18 October 2019 / Revised: 11 November 2019 / Accepted: 15 November 2019 / Published: 26 November 2019
(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications)
Browse Figures
Versions Notes

Abstract

In this work, an insulated gate bipolar transistor (IGBT) is proposed that introduces a portion of the p-polySi/p-SiC heterojunction on the collector side to reduce the tail current during device turn-offs. By adjusting the doping concentration on both sides of the heterojunction, the turn-off loss is further reduced without sacrificing other characteristics of the device. The electrical characteristics of the device were simulated through the Silvaco ATLAS 2D simulation tool and compared with the traditional structure to verify the design idea. The simulation results show that, compared with the traditional structure, the turn-off loss of the proposed structure was reduced by 58.4%, the breakdown voltage increased by 13.3%, and the forward characteristics sacrificed 8.3%.
Keywords: 4H-SiC; turn-off loss; ON-state voltage; breakdown voltage (BV); IGBT 4H-SiC; turn-off loss; ON-state voltage; breakdown voltage (BV); IGBT

Share and Cite

MDPI and ACS Style

Mao, H.-k.; Wang, Y.; Wu, X.; Su, F.-w. Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss. Micromachines 2019, 10, 815. https://doi.org/10.3390/mi10120815

AMA Style

Mao H-k, Wang Y, Wu X, Su F-w. Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss. Micromachines. 2019; 10(12):815. https://doi.org/10.3390/mi10120815

Chicago/Turabian Style

Mao, Hong-kai, Ying Wang, Xue Wu, and Fang-wen Su. 2019. "Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss" Micromachines 10, no. 12: 815. https://doi.org/10.3390/mi10120815

APA Style

Mao, H.-k., Wang, Y., Wu, X., & Su, F.-w. (2019). Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss. Micromachines, 10(12), 815. https://doi.org/10.3390/mi10120815

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop