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Journal: Micromachines, 2019
Volume: 10
Number: 815

Article: Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss
Authors: by Hong-kai Mao, Ying Wang, Xue Wu and Fang-wen Su
Link: https://www.mdpi.com/2072-666X/10/12/815

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