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Volume 1, September
 
 

Micromachines, Volume 1, Issue 1 (June 2010) – 2 articles , Pages 1-33

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2437 KiB  
Article
Evaluation of Floor-grooved Micromixers using Concentration-channel Length Profiles
by Yan Du, Zhiyi Zhang, ChaeHo Yim, Min Lin and Xudong Cao
Micromachines 2010, 1(1), 19-33; https://doi.org/10.3390/mi1010019 - 17 May 2010
Cited by 38 | Viewed by 7748
Abstract
We evaluated the dynamic micromixing performances in slanted groove micromixers (SGM) and staggered herringbone micromixers (SHM) and quantitatively compared their differences using concentration vs. channel length profiles obtained from numerical stimulations. It is found that faster and finer mixing took place in the [...] Read more.
We evaluated the dynamic micromixing performances in slanted groove micromixers (SGM) and staggered herringbone micromixers (SHM) and quantitatively compared their differences using concentration vs. channel length profiles obtained from numerical stimulations. It is found that faster and finer mixing took place in the SHM and the chaotic mixing was more effective at locations closer to the grooves; in comparison, slower and coarser mixing occurred throughout the whole channel of the SGM. Subsequently, the concentration profile-based characterization method was demonstrated in hybrid floor-grooved micromixers to study the interaction of SGM and SHM. Full article
(This article belongs to the Special Issue Micromixers)
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3219 KiB  
Article
Self-Assembled Three-Dimensional Non-Volatile Memories
by Leon Abelmann, Niels Tas, Erwin Berenschot and Miko Elwenspoek
Micromachines 2010, 1(1), 1-18; https://doi.org/10.3390/mi1010001 - 18 Jan 2010
Cited by 8 | Viewed by 7055
Abstract
The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, [...] Read more.
The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon. Full article
(This article belongs to the Special Issue Self-Assembly)
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