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Article

Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors

1
Materials Science and Engineering Course, Kochi University of Technology, Kami 782-8502, Kochi, Japan
2
Graduate School of Natural Science and Technology, Shimane University, Matsue 690-8504, Shimane, Japan
3
Center for Nanotechnology, Research Institute, Kochi University of Technology, Kami 782-8502, Kochi, Japan
4
Electronic and Photonic Systems Engineering Course, Kochi University of Technology, Kami 782-8502, Kochi, Japan
*
Author to whom correspondence should be addressed.
Academic Editor: Antonio Santagata
Materials 2022, 15(1), 187; https://doi.org/10.3390/ma15010187
Received: 28 October 2021 / Revised: 2 December 2021 / Accepted: 19 December 2021 / Published: 27 December 2021
(This article belongs to the Special Issue Advanced Semiconductor Materials and Devices 2021)
We successfully demonstrated a transition from a metallic InOx film into a nondegenerate semiconductor InOx:H film. A hydrogen-doped amorphous InOx:H (a-InOx:H) film, which was deposited by sputtering in Ar, O2, and H2 gases, could be converted into a polycrystalline InOx:H (poly-InOx:H) film by low-temperature (250 °C) solid-phase crystallization (SPC). Hall mobility increased from 49.9 cm2V−1s−1 for an a-InOx:H film to 77.2 cm2V−1s−1 for a poly-InOx:H film. Furthermore, the carrier density of a poly-InOx:H film could be reduced by SPC in air to as low as 2.4 × 1017 cm−3, which was below the metal–insulator transition (MIT) threshold. The thin film transistor (TFT) with a metallic poly-InOx channel did not show any switching properties. In contrast, that with a 50 nm thick nondegenerate poly-InOx:H channel could be fully depleted by a gate electric field. For the InOx:H TFTs with a channel carrier density close to the MIT point, maximum and average field effect mobility (μFE) values of 125.7 and 84.7 cm2V−1s−1 were obtained, respectively. We believe that a nondegenerate poly-InOx:H film has great potential for boosting the μFE of oxide TFTs. View Full-Text
Keywords: indium oxide; thin film transistor; solid-phase crystallization; metal–insulator transition indium oxide; thin film transistor; solid-phase crystallization; metal–insulator transition
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MDPI and ACS Style

Kataoka, T.; Magari, Y.; Makino, H.; Furuta, M. Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors. Materials 2022, 15, 187. https://doi.org/10.3390/ma15010187

AMA Style

Kataoka T, Magari Y, Makino H, Furuta M. Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors. Materials. 2022; 15(1):187. https://doi.org/10.3390/ma15010187

Chicago/Turabian Style

Kataoka, Taiki, Yusaku Magari, Hisao Makino, and Mamoru Furuta. 2022. "Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors" Materials 15, no. 1: 187. https://doi.org/10.3390/ma15010187

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