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Review

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

NUSOD Institute LLC, Newark, DE 19714-7204, USA
Materials 2020, 13(22), 5174; https://doi.org/10.3390/ma13225174
Received: 30 October 2020 / Revised: 9 November 2020 / Accepted: 13 November 2020 / Published: 17 November 2020
(This article belongs to the Special Issue Advances in Light-Emitting Structures and Materials)
Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements. View Full-Text
Keywords: InGaN/GaN; light-emitting diode; efficiency droop; drift-diffusion; leakage; Auger recombination; light extraction InGaN/GaN; light-emitting diode; efficiency droop; drift-diffusion; leakage; Auger recombination; light extraction
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MDPI and ACS Style

Piprek, J. Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges. Materials 2020, 13, 5174. https://doi.org/10.3390/ma13225174

AMA Style

Piprek J. Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges. Materials. 2020; 13(22):5174. https://doi.org/10.3390/ma13225174

Chicago/Turabian Style

Piprek, Joachim. 2020. "Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges" Materials 13, no. 22: 5174. https://doi.org/10.3390/ma13225174

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