Lai, Y.; Xia, L.; Xu, Q.; Li, Q.; Liu, K.; Yang, M.; Zhang, S.; Han, M.; Goto, T.; Zhang, L.;
et al. In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition. Materials 2020, 13, 410.
https://doi.org/10.3390/ma13020410
AMA Style
Lai Y, Xia L, Xu Q, Li Q, Liu K, Yang M, Zhang S, Han M, Goto T, Zhang L,
et al. In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition. Materials. 2020; 13(2):410.
https://doi.org/10.3390/ma13020410
Chicago/Turabian Style
Lai, Youfeng, Lixue Xia, Qingfang Xu, Qizhong Li, Kai Liu, Meijun Yang, Song Zhang, Mingxu Han, Takashi Goto, Lianmeng Zhang,
and et al. 2020. "In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition" Materials 13, no. 2: 410.
https://doi.org/10.3390/ma13020410
APA Style
Lai, Y., Xia, L., Xu, Q., Li, Q., Liu, K., Yang, M., Zhang, S., Han, M., Goto, T., Zhang, L., & Tu, R.
(2020). In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition. Materials, 13(2), 410.
https://doi.org/10.3390/ma13020410