Groń, T.; Bosacka, M.; Filipek, E.; Pawlus, S.; Nowok, A.; Sawicki, B.; Duda, H.; Goraus, J.
Dipole Relaxation in Semiconducting Zn2−xMgxInV3O11 Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0). Materials 2020, 13, 2425.
https://doi.org/10.3390/ma13112425
AMA Style
Groń T, Bosacka M, Filipek E, Pawlus S, Nowok A, Sawicki B, Duda H, Goraus J.
Dipole Relaxation in Semiconducting Zn2−xMgxInV3O11 Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0). Materials. 2020; 13(11):2425.
https://doi.org/10.3390/ma13112425
Chicago/Turabian Style
Groń, Tadeusz, Monika Bosacka, Elżbieta Filipek, Sebastian Pawlus, Andrzej Nowok, Bogdan Sawicki, Henryk Duda, and Jerzy Goraus.
2020. "Dipole Relaxation in Semiconducting Zn2−xMgxInV3O11 Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0)" Materials 13, no. 11: 2425.
https://doi.org/10.3390/ma13112425
APA Style
Groń, T., Bosacka, M., Filipek, E., Pawlus, S., Nowok, A., Sawicki, B., Duda, H., & Goraus, J.
(2020). Dipole Relaxation in Semiconducting Zn2−xMgxInV3O11 Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0). Materials, 13(11), 2425.
https://doi.org/10.3390/ma13112425