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Open AccessArticle

A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor

1
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
2
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
*
Authors to whom correspondence should be addressed.
Materials 2017, 10(8), 972; https://doi.org/10.3390/ma10080972
Received: 22 June 2017 / Revised: 10 August 2017 / Accepted: 15 August 2017 / Published: 21 August 2017
Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented towards enhanced performance of ZrO2 films by intentionally increasing the concentration of precursor. The ZrO2 films not only exhibit a low leakage current density of 10−6 A/cm2 at 10 V and a breakdown field of 2.5 MV/cm, but also demonstrate a saturation mobility of 12.6 cm2·V−1·s−1 and a Ion/Ioff ratio of 106 in DC pulse sputtering IGZO-TFTs based on these films. Moreover, the underlying mechanism of influence of precursor concentration on film formation is presented. Higher concentration precursor results in a thicker film within same coating times with reduced ZrO2/IGZO interface defects and roughness. It shows the importance of thickness, roughness, and annealing temperature in solution-processed dielectric oxide TFT and provides an approach to precisely control solution-processed oxide films thickness. View Full-Text
Keywords: solution-processed ZrO2; low leakage current density; precursor concentration; control thickness solution-processed ZrO2; low leakage current density; precursor concentration; control thickness
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MDPI and ACS Style

Cai, W.; Zhu, Z.; Wei, J.; Fang, Z.; Ning, H.; Zheng, Z.; Zhou, S.; Yao, R.; Peng, J.; Lu, X. A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor. Materials 2017, 10, 972.

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