Next Article in Journal
Perspective for Fibre-Hybrid Composites in Wind Energy Applications
Previous Article in Journal
Low-Temperature Crystal Structures of the Hard Core Square Shoulder Model
Article Menu
Issue 11 (November) cover image

Export Article

Open AccessArticle
Materials 2017, 10(11), 1282;

Temperature-Dependent Photoluminescence Emission from Unstrained and Strained GaSe Nanosheets

School of Physics, Beijing Institute of Technology, Beijing 100081, China
Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Elementary Educational College, Capital Normal University, Beijing 100048, China
Author to whom correspondence should be addressed.
Received: 30 September 2017 / Revised: 27 October 2017 / Accepted: 7 November 2017 / Published: 8 November 2017
Full-Text   |   PDF [2199 KB, uploaded 8 November 2017]   |  


Two-dimensional AIIIBVI layered semiconductors have recently attracted great attention due to their potential applications in piezo-phototronics and optoelectronics. Here, we report the temperature-dependent photoluminescence (PL) of strained and unstrained GaSe flakes. It is found that, as the temperature increases, the PL from both the strained (wrinkled) and unstrained (flat) positions show a prominent red-shift to low energies. However, for the flat case, the slope of PL energy versus temperature at the range of 163–283 K is about −0.36 meV/K, which is smaller than that of the wrinkled one (−0.5 meV/K). This is because more strain can be introduced at the freestanding wrinkled position during the temperature increase, thus accelerates the main PL peak (peak I, direct band gap transition) shift to lower energy. Additionally, for the wrinkled sheet, three new exciton states (peaks III, IV, and V) appear at the red side of peak I, and the emission intensity is highly dependent on the temperature variation. These peaks can be attributed to the bound exciton recombination. These findings demonstrate an interesting route for optical band gap tuning of the layered GaSe sheet, which are important for future optoelectronic device design. View Full-Text
Keywords: GaSe; photoluminescence; strain; temperature dependence GaSe; photoluminescence; strain; temperature dependence

Figure 1a

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Supplementary material


Share & Cite This Article

MDPI and ACS Style

Zhang, D.; Jia, T.; Dong, R.; Chen, D. Temperature-Dependent Photoluminescence Emission from Unstrained and Strained GaSe Nanosheets. Materials 2017, 10, 1282.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top