Miyakawa, N.; Shinagawa, A.; Kajiwara, Y.; Ushiba, S.; Ono, T.; Kanai, Y.; Tani, S.; Kimura, M.; Matsumoto, K.
Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms. Sensors 2021, 21, 7455.
https://doi.org/10.3390/s21227455
AMA Style
Miyakawa N, Shinagawa A, Kajiwara Y, Ushiba S, Ono T, Kanai Y, Tani S, Kimura M, Matsumoto K.
Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms. Sensors. 2021; 21(22):7455.
https://doi.org/10.3390/s21227455
Chicago/Turabian Style
Miyakawa, Naruto, Ayumi Shinagawa, Yasuko Kajiwara, Shota Ushiba, Takao Ono, Yasushi Kanai, Shinsuke Tani, Masahiko Kimura, and Kazuhiko Matsumoto.
2021. "Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms" Sensors 21, no. 22: 7455.
https://doi.org/10.3390/s21227455
APA Style
Miyakawa, N., Shinagawa, A., Kajiwara, Y., Ushiba, S., Ono, T., Kanai, Y., Tani, S., Kimura, M., & Matsumoto, K.
(2021). Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms. Sensors, 21(22), 7455.
https://doi.org/10.3390/s21227455
