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Capacitive Measurements of SiO2 Films of Different Thicknesses Using a MOSFET-Based SPM Probe

by 1,†, 2,† and 1,*
1
Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang-si 37673, Gyeongsangbuk-do, Korea
2
Safety System R&D Group, Korea Institute of Industrial Technology (KITECH), 15 Jisiksaneop-ro, Hayang-eup, Gyeongsan-si 38408, Gyeongsangbuk-do, Korea
*
Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Academic Editor: Giuseppe Ferri
Sensors 2021, 21(12), 4073; https://doi.org/10.3390/s21124073
Received: 21 May 2021 / Revised: 9 June 2021 / Accepted: 9 June 2021 / Published: 13 June 2021
(This article belongs to the Section Electronic Sensors)
We utilized scanning probe microscopy (SPM) based on a metal-oxide-silicon field-effect transistor (MOSFET) to image interdigitated electrodes covered with oxide films that were several hundred nanometers in thickness. The signal varied depending on the thickness of the silicon dioxide film covering the electrodes. We deposited a 400- or 500-nm-thick silicon dioxide film on each sample electrode. Thick oxide films are difficult to analyze using conventional probes because of their low capacitance. In addition, we evaluated linearity and performed frequency response measurements; the measured frequency response reflected the electrical characteristics of the system, including the MOSFET, conductive tip, and local sample area. Our technique facilitated analysis of the passivation layers of integrated circuits, especially those of the back-end-of-line (BEOL) process, and can be used for subsurface imaging of various dielectric layers. View Full-Text
Keywords: scanning probe microscopy (SPM); FET sensor; scanning capacitive microscopy (SCM); electrostatic force microscopy (EFM); subsurface imaging scanning probe microscopy (SPM); FET sensor; scanning capacitive microscopy (SCM); electrostatic force microscopy (EFM); subsurface imaging
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MDPI and ACS Style

Lee, H.; Shin, K.; Moon, W. Capacitive Measurements of SiO2 Films of Different Thicknesses Using a MOSFET-Based SPM Probe. Sensors 2021, 21, 4073. https://doi.org/10.3390/s21124073

AMA Style

Lee H, Shin K, Moon W. Capacitive Measurements of SiO2 Films of Different Thicknesses Using a MOSFET-Based SPM Probe. Sensors. 2021; 21(12):4073. https://doi.org/10.3390/s21124073

Chicago/Turabian Style

Lee, Hoontaek, Kumjae Shin, and Wonkyu Moon. 2021. "Capacitive Measurements of SiO2 Films of Different Thicknesses Using a MOSFET-Based SPM Probe" Sensors 21, no. 12: 4073. https://doi.org/10.3390/s21124073

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