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Open AccessArticle

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

1
School of Electrical and Computer Engineering, Oklahoma State University, Stillwater, OK 74078, USA
2
Broadcom Inc., San Jose, CA 95131, USA
3
School of Electrical and Computer Engineering, Georgia Institute of Technology, GA 30318, USA
4
US Naval Research Laboratory, Washington, DC 20375, USA
5
Defense Threat Reduction Agency, Fort Belvoir, VA 22060, USA
*
Author to whom correspondence should be addressed.
Sensors 2020, 20(9), 2581; https://doi.org/10.3390/s20092581
Received: 17 March 2020 / Revised: 23 April 2020 / Accepted: 29 April 2020 / Published: 1 May 2020
(This article belongs to the Special Issue Radiation-Hardened Sensors, Circuits and Systems)
It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time significantly decrease. In the present work, we demonstrate how radiation hardening by design (RHBD) techniques utilized in DC bias blocks only (current mirrors) can also improve the SET response in AC signal paths of switching circuits (e.g., current-mode logic, CML) without any additional hardening in those AC signal paths. Four CML circuits both with and without RHBD current mirrors were fabricated in 130 nm SiGe HBT technology. Two existing RHBD techniques were employed separately in the current mirrors of the CML circuits: (1) applying internal negative feedback and (2) adding a large capacitor in a sensitive node. In addition, these methods are also combined to analyze the overall SET performance. The single-event transients of the fabricated circuits were captured under the two-photon-absorption laser-induced single-event environment. The measurement data clearly show significant improvements in SET response in the AC signal paths of the CML circuits by using the two radiation hardening techniques applied only in DC current mirrors. The peak output transient current is notably reduced, and the settling time upon a laser strike is shortened significantly. View Full-Text
Keywords: current-mode logic (CML); heterojunction bipolar transistor (HBT); negative feedback; radiation hardening by design (RHBD); single-event effects (SEE); single-event transients (SET); silicon germanium (SiGe) current-mode logic (CML); heterojunction bipolar transistor (HBT); negative feedback; radiation hardening by design (RHBD); single-event effects (SEE); single-event transients (SET); silicon germanium (SiGe)
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MDPI and ACS Style

Sarker, M.A.R.; Jung, S.; Ildefonso, A.; Khachatrian, A.; Buchner, S.P.; McMorrow, D.; Paki, P.; Cressler, J.D.; Song, I. Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits. Sensors 2020, 20, 2581. https://doi.org/10.3390/s20092581

AMA Style

Sarker MAR, Jung S, Ildefonso A, Khachatrian A, Buchner SP, McMorrow D, Paki P, Cressler JD, Song I. Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits. Sensors. 2020; 20(9):2581. https://doi.org/10.3390/s20092581

Chicago/Turabian Style

Sarker, Md A.R.; Jung, Seungwoo; Ildefonso, Adrian; Khachatrian, Ani; Buchner, Stephen P.; McMorrow, Dale; Paki, Pauline; Cressler, John D.; Song, Ickhyun. 2020. "Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits" Sensors 20, no. 9: 2581. https://doi.org/10.3390/s20092581

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