Coros, M.; Varodi, C.; Pogacean, F.; Gal, E.; Pruneanu, S.M.
Nitrogen-Doped Graphene: The Influence of Doping Level on the Charge-Transfer Resistance and Apparent Heterogeneous Electron Transfer Rate. Sensors 2020, 20, 1815.
https://doi.org/10.3390/s20071815
AMA Style
Coros M, Varodi C, Pogacean F, Gal E, Pruneanu SM.
Nitrogen-Doped Graphene: The Influence of Doping Level on the Charge-Transfer Resistance and Apparent Heterogeneous Electron Transfer Rate. Sensors. 2020; 20(7):1815.
https://doi.org/10.3390/s20071815
Chicago/Turabian Style
Coros, Maria, Codruta Varodi, Florina Pogacean, Emese Gal, and Stela M. Pruneanu.
2020. "Nitrogen-Doped Graphene: The Influence of Doping Level on the Charge-Transfer Resistance and Apparent Heterogeneous Electron Transfer Rate" Sensors 20, no. 7: 1815.
https://doi.org/10.3390/s20071815
APA Style
Coros, M., Varodi, C., Pogacean, F., Gal, E., & Pruneanu, S. M.
(2020). Nitrogen-Doped Graphene: The Influence of Doping Level on the Charge-Transfer Resistance and Apparent Heterogeneous Electron Transfer Rate. Sensors, 20(7), 1815.
https://doi.org/10.3390/s20071815