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Open AccessArticle

Characteristics of a Magnetic Field Sensor with a Concentrating-Conducting Magnetic Flux Structure

School of Electronics Engineering, Heilongjiang University, Harbin 150080, China
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Author to whom correspondence should be addressed.
Sensors 2019, 19(20), 4498; https://doi.org/10.3390/s19204498
Received: 2 September 2019 / Revised: 26 September 2019 / Accepted: 30 September 2019 / Published: 17 October 2019
(This article belongs to the Special Issue Nano and MEMS Sensors)
A magnetic field sensor with a new concentrating-conducting magnetic flux structure (CCMFS) is proposed in this paper, using a silicon-on insulator (SOI) Hall element fabricated by complementary metal oxide semiconductor (CMOS) technology as a magnetic sensitive unit. By fixing the CCMFS above the Hall element packaged on a printed circuit board (PCB) based on inner-connect wire bonding technology, a non-magnetized package can subsequently be obtained. To analyze the inner magnetic field vector distribution of the CCMFS, a simulation model was built based on a finite element software, where the CCMFS was processed using Ni-Fe alloys material by a low speed wire-cut electric discharge technology. The test results showed that the measurement of magnetic fields along a sensitive and a non-sensitive axis can be achieved when VDD = 5.0 V at room temperature, with magnetic sensitivities of 122 mV/T and 132 mV/T in a testing range from −30 mT to 30 mT, respectively. This study makes it possible to not only realize the detection of magnetic field, but also to significantly improve the sensitivity of the sensor along a non-sensitive axis. View Full-Text
Keywords: concentrating-conducting magnetic flux structure; Hall element; finite element simulation concentrating-conducting magnetic flux structure; Hall element; finite element simulation
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Li, X.; Zhao, X.; Wen, D. Characteristics of a Magnetic Field Sensor with a Concentrating-Conducting Magnetic Flux Structure. Sensors 2019, 19, 4498.

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