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Recent Developments of High-Resolution Chemical Imaging Systems Based on Light-Addressable Potentiometric Sensors (LAPSs)
Open AccessArticle

InGaN as a Substrate for AC Photoelectrochemical Imaging

1
School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, UK
2
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK
*
Author to whom correspondence should be addressed.
Sensors 2019, 19(20), 4386; https://doi.org/10.3390/s19204386
Received: 16 August 2019 / Revised: 4 October 2019 / Accepted: 8 October 2019 / Published: 11 October 2019
AC photoelectrochemical imaging at electrolyte–semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and experimentally shown to generate a considerable photocurrent under illumination with a 405 nm modulated diode laser at comparatively high frequencies and low applied DC potentials, making this a promising substrate for bioimaging applications. Linear sweep voltammetry showed negligible dark currents. The imaging capabilities of the sensor substrate were demonstrated with a model system and showed a lateral resolution of 7 microns. View Full-Text
Keywords: photoelectrochemistry; InGaN/GaN epilayer; cell imaging; light-activated electrochemistry; light-addressable potentiometric sensor photoelectrochemistry; InGaN/GaN epilayer; cell imaging; light-activated electrochemistry; light-addressable potentiometric sensor
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MDPI and ACS Style

Zhou, B.; Das, A.; Kappers, M.J.; Oliver, R.A.; Humphreys, C.J.; Krause, S. InGaN as a Substrate for AC Photoelectrochemical Imaging. Sensors 2019, 19, 4386.

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