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Article

GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes

by 1,*, 2 and 2,*
1
Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, China
2
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China
*
Authors to whom correspondence should be addressed.
Int. J. Mol. Sci. 2019, 20(23), 6001; https://doi.org/10.3390/ijms20236001
Received: 14 October 2019 / Revised: 20 November 2019 / Accepted: 25 November 2019 / Published: 28 November 2019
(This article belongs to the Special Issue Nano-Materials and Methods)
InPBi exhibits broad and strong photoluminescence at room temperature, and is a potential candidate for fabricating super-luminescence diodes applied in optical coherence tomography. In this paper, the strained InPBi quantum dot (QD) embedded in the AlGaAs barrier on a GaAs platform is proposed to enhance the light emission efficiency and further broaden the photoluminescence spectrum. The finite element method is used to calculate the strain distribution, band alignment and confined levels of InPBi QDs. The carrier recombinations between the ground states and the deep levels are systematically investigated. A high Bi content and a flat QD shape are found preferable for fabricating super-luminescence diodes with high efficiency and a broad emission spectrum. View Full-Text
Keywords: InPBi; quantum dot; finite element method; super-luminescent diode InPBi; quantum dot; finite element method; super-luminescent diode
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MDPI and ACS Style

Zhang, L.; Song, Y.; Gong, Q. GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes. Int. J. Mol. Sci. 2019, 20, 6001. https://doi.org/10.3390/ijms20236001

AMA Style

Zhang L, Song Y, Gong Q. GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes. International Journal of Molecular Sciences. 2019; 20(23):6001. https://doi.org/10.3390/ijms20236001

Chicago/Turabian Style

Zhang, Liyao, Yuxin Song, and Qian Gong. 2019. "GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes" International Journal of Molecular Sciences 20, no. 23: 6001. https://doi.org/10.3390/ijms20236001

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