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Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition

School of Geography and Environmental Sciences, Guizhou Normal University, Guizhou 550001, China
Center for Programmable Materials, School of Material Science and Engineering, Nanyang Technological University, Singapore 637798, Singapore
Author to whom correspondence should be addressed.
Academic Editor: Derek J. McPhee
Molecules 2016, 21(12), 1636;
Received: 17 August 2016 / Revised: 19 November 2016 / Accepted: 24 November 2016 / Published: 29 November 2016
(This article belongs to the Special Issue Boron Nitride: Synthesis and Application)
Hexagonal boron nitrite (h-BN) is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers. The quality of as-grown h-BN is confirmed by complementary characterizations including high-resolution transition electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photo-electron spectroscopy. This work will pave the way for production of large-scale and high-quality h-BN and its applications as well. View Full-Text
Keywords: chemical vapor deposition; hexagonal boron nitride; synthesis chemical vapor deposition; hexagonal boron nitride; synthesis
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Liu, J.; Kutty, R.G.; Liu, Z. Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition. Molecules 2016, 21, 1636.

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