Search Results (47)

As the exponential growth in advanced compute workloads drives intra-datacenter interconnects to ever increasing bitrates, optical networking equipment has risen to the challenge by shifting from NRZ signaling to bandwidth efficient modulation methods such as PAM4. As these modulation schemes introduce an inherent SNR penalty, maintaining low bit error rates (BER) forces optical links to operate at significantly higher optical powers. However, increasing the optical power leads to photodetectors reaching one of their fundamental bottlenecks caused by the space-charge effect, limiting their ability to provide a high-speed response under high-power illumination. This work presents the design, fabrication, and characterization of a waveguide-integrated photodiode with dual optical inputs (DIPD) designed to overcome this limitation. Specifically, we demonstrate that combining a dual-fed architecture with targeted cross-sectional geometric optimizations effectively distributes the photocurrent density to delay the onset of space-charge saturation. Experimental validation demonstrates a high responsivity of ≈0.91 [A/W] (for O-band wavelengths) and a large electro-optic bandwidth (EOBW) of ≈58 [GHz], all under high-power illumination and CMOS driving voltages. Full article

Frequency-modulated continuous-wave (FMCW) light detection and ranging (LiDAR) based on coherent ranging is a technology capable of high-resolution distance measurement while remaining robust against ambient light interference. However, extending the measurable range remains challenging due to (i) the coherence length limitation of the laser and (ii) distance ambiguity caused by frequency ambiguity in coherent detection. To overcome these limitations, we propose an unambiguous range-extended FMCW LiDAR enabled by arrayed waveguide grating (AWG)-based spectral multiplexing. By spectrally demultiplexing the reference arm into four wavelength channels with sequentially designed optical path delays, multiple independent interference signals are obtained simultaneously without increasing the number of photodetectors or optical couplers. A channel-pair-based distance decoding algorithm is further introduced to resolve distance ambiguity by classifying detection outcomes across adjacent channels and selectively applying predefined operations. The proposed FMCW LiDAR system effectively extends the measurable range to approximately five times that of a conventional FMCW LiDAR. Experimental results demonstrate high measurement accuracy and successful reconstruction of three-dimensional distance maps, validating the system’s potential for extended-range FMCW LiDAR applications. Full article

Silicon photonics offers a powerful route to leverage existing microelectronics infrastructure to enhance performance and enable new applications in data processing and sensing. Among the available material platforms, silicon nitride (Si₃N₄) provides significant advantages due to its wide optical transmission window. A key challenge, however, remains the monolithic integration of passive nitride-based photonic components with active electronic devices directly on silicon wafers. In this work, we propose and demonstrate a tapered bottom-cladding design that enables efficient coupling of visible light from Si₃N₄/SiO₂ core–cladding waveguides into planar p–n junction photodiodes fabricated on the silicon surface. Si₃N₄/SiO₂ waveguides were fabricated using fully CMOS-compatible processes and materials. Controlled reactive ion etching (RIE) of SiO₂ allowed the formation of vertically tapered claddings, and finite-difference time-domain (FDTD) simulations were carried out to analyze coupling efficiency across wavelengths from 509 nm to 740 nm. Simulations showed transmission efficiencies above 90% for taper angles below 30°, with near-total coupling at 10°. Experimental fabrication achieved angles as low as 8°. Responsivity simulations yielded values up to 311 mA W⁻¹ for photodiodes without internal gain. These results demonstrate the feasibility of fabricating monolithic Si-based waveguide–photodetector systems using simple, CMOS-compatible methods, opening a scalable path for integrated photonic–electronic devices operating in the visible range. Full article

Photodetectors are critical components in a wide range of applications, including military, communications, medical, and aerospace fields. With ongoing advancements in optoelectronics, the strategy of integrating multiple optical structures with photodetectors has led to substantial improvements in detection performance. This review summarizes recent research progress in optically coupled photodetectors, providing a systematic analysis of the operational mechanisms and performance characteristics of five key coupling configurations: optical waveguides, surface plasmon resonance structures, microcavities, gratings, and integrated metasurfaces. Furthermore, the main limitations of current coupling technologies and challenges facing the development of future coupled devices are discussed. Recent studies indicate that heterogeneous integration, multi-physical field coupling, and automated fabrication processes are paving the way for high-performance photodetectors with enhanced bandwidth, sensitivity, functional integration, and spectral control capabilities. Full article

A directly coupled waveguide uni-traveling carrier photodetector (UTC-PD) with high responsivity and broad bandwidth is demonstrated. The device’s epitaxial structure was carefully optimized via optical simulations to enhance quantum efficiency. Furthermore, the fabrication process was refined to introduce a vertically defined mushroom-shaped mesa structure, which effectively maintains high responsivity while facilitating further improvement in bandwidth performance. As a result, the fabricated device, without the use of an anti-reflection coating, simultaneously achieves a responsivity of 0.49 A/W and a 3 dB bandwidth of 90 GHz. Full article

Silicon-based microcavity quantum dot lasers are attractive candidates for on-chip light sources in photonic integrated circuits due to their small size, low power consumption, and compatibility with silicon photonic platforms. However, integrating components like quantum dot lasers and photodetectors on a single chip remains challenging due to material compatibility issues and mode field mismatch problems. In this work, we have demonstrated monolithic integration of an InAs quantum dot microdisk light emitter, waveguide, and photodetector on a silicon platform using a shared epitaxial structure. The photodetector successfully monitored variations in light emitter output power, experimentally proving the feasibility of this integrated scheme. This work represents a key step toward multifunctional integrated photonic systems. Future efforts will focus on enhancing the light emitter output power, improving waveguide efficiency, and scaling up the integration density for advanced applications in optical communication. Full article

Benefiting from the progress of the germanium (Ge) epitaxy process on silicon (Si) substrates, waveguide-integrated Ge-on-Si photodetectors (PDs) have demonstrated decent performances in short-wave infrared (SWIR) detection. By lowering the operating temperature, theses PDs can meet the stringent signal-to-noise requirements for high-sensitivity detection. We systematically investigated the dark current characteristics and optical response in the 1500–1600 nm wavelength range of the waveguide-integrated Ge-on-Si PDs operated at low temperatures (200 K to 300 K). Under a −3 V bias, the PD exhibits a room-temperature dark current of 4.62 nA and a responsivity of 0.87 A/W at 1550 nm. When the temperature was reduced to 200 K, the dark current decreased to 93.69 pA, and the responsivity dropped to 0.34 A/W. Using finite-difference time-domain (FDTD) and technology computer-aided design (TCAD) simulations, we extracted the absorption coefficients of epitaxial Ge on Si at low temperatures. At room temperature, the absorption coefficient at the wavelength of 1550 nm was approximately 1100 cm⁻¹, while at 200 K, the absorption coefficient decreased to 248 cm⁻¹. The outcomes of this work pave the way for the high-performance low-temperature Si photonic systems in the future. Full article

Nanoplasmonic structures have emerged as a promising approach to address light trapping limitations in thin-film optoelectronic devices. This study investigates the integration of metallic nanoparticle arrays onto nanocrystalline silicon (nc-Si:H) thin films to enhance optical absorption through plasmonic effects. Using finite-difference time-domain (FDTD) simulations, we systematically optimize key design parameters, including nanoparticle geometry, spacing, metal type (Ag and Al), dielectric spacer material, and absorber layer thickness. The results show that localized surface plasmon resonances (LSPRs) significantly amplify near-field intensities, improve forward scattering, and facilitate coupling into waveguide modes within the active layer. These effects lead to a measurable increase in integrated quantum efficiency, with absorption improvements reaching up to 30% compared to bare nc-Si:H films. The findings establish a reliable design framework for engineering nanoplasmonic architectures that can be applied to enhance performance in photovoltaic devices, photodetectors, and other optoelectronic systems. Full article

In this work, we present a graphene-based photodetector operating at a wavelength of 1310 nm. The device leverages the SPARK effect, which has previously been investigated only at 1550 nm. It features a hybrid waveguide structure comprising hydrogenated amorphous silicon, graphene, and crystalline silicon. Upon optical illumination, defect states release charge carriers into the graphene layer, modulating the thermionic current across the graphene/crystalline silicon Schottky junction. The photodetector demonstrates a peak responsivity of 0.3 A/W at 1310 nm, corresponding to a noise-equivalent power of 0.4 pW/Hz^1/2. The experimental results provide deeper insights into the SPARK effect by enabling the determination of the efficiency × lifetime product of carriers at 1310 nm and its comparison with values previously reported at 1550 nm. The wavelength dependence of this product is analyzed and discussed. Additionally, the response times of the device are measured and evaluated. The silicon-based fabrication approach employed is versatile and does not rely on sub-micron lithography techniques. Notably, reducing the incident optical power enhances the responsivity, making this photodetector highly suitable for power monitoring applications in integrated photonic circuits. Full article

The integration of a photodetector that converts optical signals into electrical signals is essential for scalable integrated lithium niobate photonics. Two-dimensional materials provide a potential high-efficiency on-chip detection capability. Here, we demonstrate an efficient on-chip photodetector based on a few layers of MoTe₂ on a thin film lithium niobate waveguide and integrate it with a microresonator operating in an optical telecommunication band. The lithium-niobate-on-insulator waveguides and micro-ring resonator are fabricated using the femtosecond laser photolithography-assisted chemical–mechanical etching method. The lithium niobate waveguide-integrated MoTe₂ presents an absorption coefficient of 72% and a transmission loss of 0.27 dB µm⁻¹ at 1550 nm. The on-chip photodetector exhibits a responsivity of 1 mA W⁻¹ at a bias voltage of 20 V, a low dark current of 1.6 nA, and a photo–dark current ratio of 10⁸ W⁻¹. Due to effective waveguide coupling and interaction with MoTe₂, the generated photocurrent is approximately 160 times higher than that of free-space light irradiation. Furthermore, we demonstrate a wavelength-selective photonic device by integrating the photodetector and micro-ring resonator with a quality factor of 10⁴ on the same chip, suggesting potential applications in the field of on-chip spectrometers and biosensors. Full article

Photonic circuits find applications in biomedicine, manufacturing, quantum computing and communications. Photonic waveguides are crucial components, typically having cross-section orders of magnitude inferior when compared with other photonic components (e.g., optical fibers, light sources and photodetectors). Several light-coupling methods exist, consisting of either on-plane (e.g., adiabatic and end-fire coupling) or off-plane methods (e.g., grating and vertical couplers). The grating coupler is a versatile light-transference technique which can be tested at wafer level, not requiring specific fiber terminations or additional optical components, like lenses, polarizers or prisms. This study focuses on fully-etched grating couplers without a bottom reflector, made from hydrogenated amorphous silicon (a-Si:H), deposited over a silica substrate. Different coupler designs were tested, and of these we highlight two: the superimposition of two lithographic masks with different periods and an offset between them to create a random distribution and a technique based on the quadratic refractive-index variation along the device’s length. Results were obtained by 2D-FDTD simulation. The designed grating couplers achieve coupling efficiencies for the TE-like mode over −8 dB (mask overlap) and −3 dB (quadratic variation), at a wavelength of 1550 nm. The coupling scheme considers a 220 nm a-Si:H waveguide and an SMF-28 optical fiber. Full article

Gallium oxide (Ga₂O₃) is an emerging wide bandgap semiconductor promising a wide range of important applications. However, mass production of high-quality crystalline Ga₂O₃ still suffers from limitations associated with poor reproducibility and low efficiency. Low-temperature-grown amorphous Ga₂O₃ demonstrates comparable performance with its crystalline counterparts. Lanthanide Er³⁺-doped Ga₂O₃ (Ga₂O₃: Er) possesses great potential for developing light-emitting devices, photodetectors, solid-state lasers, and optical waveguides. The host circumstance can exert a crystal field around the lanthanide dopants and strongly influence their photoluminescence properties. Here, we present a systematical study of the impact of amorphous-to-crystalline transition on the upconversion photoluminescence in Ga₂O₃: Er thin films. Through controlling the growth temperature of Ga₂O₃: Er films, the upconversion luminescence of crystalline Ga₂O₃: Er thin film is strongly enhanced over 100 times that of the amorphous Ga₂O₃: Er thin film. Moreover, the variation of photoluminescence reflects the amorphous-to-crystalline transformation of the Ga₂O₃: Er thin films. These results will aid further designs of favorable optoelectronic devices integrated with lanthanide-doped Ga₂O₃ thin films. Full article

With the growing trend in the information industry, silicon photonics technology has been explored in both academia and industry and utilized for high-bandwidth data transmission. Thanks to the benefits of silicon, such as high refractive index contrast with its oxides, low loss, substantial thermal–optical effect, and compatibility with CMOS, a range of passive and active photonic devices have been demonstrated, including waveguides, modulators, photodetectors, and lasers. The most challenging aspect remains to be the on-chip laser source, whose performance is constrained by the indirect bandgap of silicon. This review paper highlights the advancements made in the field of integrated laser sources on the silicon photonics platform. These on-chip lasers are classified according to their gain media, including V semiconductors, III–V semiconductors, two-dimensional materials, and colloidal quantum dots. The methods of integrating these lasers onto silicon are also detailed in this review. Full article

Ge/Si separate absorption, charge, and multiplication avalanche photodiodes (SACM APDs) coupled with waveguides have shown significant potential as high-sensitivity, low-noise, and high-speed photodetectors for optical communications. In this study, we present a waveguide-integrated Ge/Si SACM APD fabricated on an eight-inch silicon photonics platform. The device exhibits a primary responsivity of 0.68 A/W at the unit gain voltage of 6 V for the O-band (1310 nm) wavelength, with a 10 μm-long and 1 μm-wide Ge layer. Additionally, the device demonstrates a 3 dB bandwidth of 25.7 GHz, with an input optical power of −16.8 dBm. The largest gain bandwidth product (GBP) is 247 GHz at a gain of 9.64 and a bias voltage of 15.7 V. The eye diagram is open at the bias voltage of 16 V, with a capacity to receive 28 Gbps of data. This APD shows potential for application in high-speed data transmission systems. Full article

In this work, a vertical N-I-P germanium (Ge) photodetector (PD) with a multi-mode waveguide input is presented. The fabricated devices exhibit a low dark current of 10 nA at bias of −1 V, and a high responsivity of exceeding 0.75 A/W over the wavelength range from 1270 to 1350 nm. High-frequency characteristics measurements show that the photodetector has a 3 dB opto-electrical (OE) bandwidth of 23 GHz under −3 V bias, which can be further improved by optimization of the photodetector configuration. A 50 Gb/s clear eye diagram with a non-return-to-zero (NRZ) modulation format is demonstrated. By using a single-mode excitation source, which is used to simulate light coming from the wavelength division multiplexing (WDM) devices, and sweeping its position, it is shown that the multi-mode input photodetector can be utilized in a WDM receiver to achieve both high responsivity and a flat-top passband. Full article