Novel Advances in Integrated Optics

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: closed (30 June 2024) | Viewed by 5832

Special Issue Editors

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
Interests: silicon photonics; integrated optics; two-dimensional materials; optoelectronics

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Guest Editor
College of Sciences, National University of Defense Technology, Changsha 410073, China
Interests: micro-ring resonator; nonlinear optics; microwave photonics; integrated nonlinear materials; four-wave mixing
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Special Issue Information

Dear Colleagues,

We are pleased to announce the upcoming Special Issue on "Novel Advances in Integrated Optics", which will be published in the journal Photonics. Integrated optics has emerged as a promising field that combines optics, photonics, and microelectronics to develop compact, efficient, and multifunctional photonic devices. This Special Issue aims to provide a platform for researchers to share their groundbreaking findings and foster collaborations in this rapidly evolving field.

Integrated optics plays a pivotal role in addressing the growing demand for high-speed, low-power consumption devices and the exponential growth of data communication and sensing technologies. With its potential to revolutionize various industries, including telecommunications, computing, sensing, and quantum photonics, integrated optics has garnered significant attention from both academia and industry.

The Special Issue “Novel Advances in Integrated Optics” seeks to capture the latest research and emerging trends in this field. We invite researchers to contribute their original research articles, review papers, and short communications addressing fundamental challenges, novel design concepts, fabrication techniques, and applications of integrated optics.

Topics of interest for this Special Issue include, but are not limited to:

  • Integrated waveguides and nanophotonics;
  • Silicon photonics and on-chip photonic circuits;
  • Integrated quantum photonics;
  • Hybrid integration technologies;
  • Photonic integrated circuit design and optimization;
  • Integration of active and passive optical components;
  • Advanced fabrication techniques for integrated optics;
  • Nonlinear optical phenomena in integrated devices.

Dr. Siqi Yan
Dr. Meicheng Fu
Guest Editors

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Published Papers (2 papers)

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Review

19 pages, 7836 KiB  
Review
Increase in Modulation Speed of Silicon Photonics Modulator with Quantum-Well Slab Wings: New Insights from a Numerical Study
by Kensuke Ogawa
Photonics 2024, 11(6), 535; https://doi.org/10.3390/photonics11060535 - 3 Jun 2024
Viewed by 1357
Abstract
A Silicon Photonics modulator is a high-speed photonic integrated circuit for optical data transmission in high-capacity optical networks. Silicon Photonics modulators in the configuration of a Mach–Zehnder interferometer, in which a PN-junction rib-waveguide phase shifter is inserted in each arm of the interferometer, [...] Read more.
A Silicon Photonics modulator is a high-speed photonic integrated circuit for optical data transmission in high-capacity optical networks. Silicon Photonics modulators in the configuration of a Mach–Zehnder interferometer, in which a PN-junction rib-waveguide phase shifter is inserted in each arm of the interferometer, are studied in this paper because of their superior performance of high-quality optical data generation in a wide range of spectral bands and their simplicity in fabrication processes suitable to production in foundries. Design, fabrication, and fundamental characteristics of Silicon Photonics Mach–Zehnder modulators are reviewed as an introduction to these high-speed PICs on the Silicon Photonics platform. Modulation speed, or modulation bandwidth, is a key performance item, as well as optical loss, in the application to high-speed optical transmitters. Limiting factors on modulation speed are addressed in equations. Electrical resistance–capacitance coupling, which causes optical modulation bandwidth–optical loss trade-off, is the most challenging limiting factor that limits high-speed modulation. Expansion of modulation bandwidth is not possible without increasing optical loss in the conventional approaches. A new idea including quantum-mechanical effect in the design of Silicon Photonics modulators is proposed and proved in computational analysis to resolve the bandwidth loss trade-off. By adding high-mobility quantum-well overlayers to the side slab wings of the rib-waveguide phase shifter, the modulation bandwidth is doubled without increasing optical loss to achieve a 200 Gbaud modulation rate. Full article
(This article belongs to the Special Issue Novel Advances in Integrated Optics)
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23 pages, 6446 KiB  
Review
On-Chip Lasers for Silicon Photonics
by Jiangwen Zhang, Aadithya G. Shankar and Xihua Wang
Photonics 2024, 11(3), 212; https://doi.org/10.3390/photonics11030212 - 27 Feb 2024
Viewed by 3598
Abstract
With the growing trend in the information industry, silicon photonics technology has been explored in both academia and industry and utilized for high-bandwidth data transmission. Thanks to the benefits of silicon, such as high refractive index contrast with its oxides, low loss, substantial [...] Read more.
With the growing trend in the information industry, silicon photonics technology has been explored in both academia and industry and utilized for high-bandwidth data transmission. Thanks to the benefits of silicon, such as high refractive index contrast with its oxides, low loss, substantial thermal–optical effect, and compatibility with CMOS, a range of passive and active photonic devices have been demonstrated, including waveguides, modulators, photodetectors, and lasers. The most challenging aspect remains to be the on-chip laser source, whose performance is constrained by the indirect bandgap of silicon. This review paper highlights the advancements made in the field of integrated laser sources on the silicon photonics platform. These on-chip lasers are classified according to their gain media, including V semiconductors, III–V semiconductors, two-dimensional materials, and colloidal quantum dots. The methods of integrating these lasers onto silicon are also detailed in this review. Full article
(This article belongs to the Special Issue Novel Advances in Integrated Optics)
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