Search Results (25)

The spin wave renormalization processes in two-dimensional van der Waals ferromagnetic monolayers are investigated using an established non-bosonic diagram technique based on the drone-fermion perturbation method. The aim is to evaluate the damping of the long-wavelength spin wave modes at temperatures below the Curie temperature. In addition to the multi-magnon scattering processes, which typically dominate at low temperatures, an additional mechanism is found here that becomes important at elevated temperatures. This spin disorder damping mechanism, which was mainly studied previously in bulk magnetic materials and thicker films, features a spin wave or magnon being scattered by the magnetic disorder that is present when a longitudinal spin component undergoes large thermal fluctuations. The magnetic ordering in the monolayers is stabilized by an out-of-plane single-ion or Ising-type anisotropy, which influences the damping properties. Numerical results are derived for monolayer films of the van der Waals ferromagnet Cr₂Ge₂Te₆. Full article

Electrical transport in 2D materials exhibits unique behaviors due to reduced dimensionality, broken symmetries, and quantum confinement. It serves as both a sensitive probe for the emergence of coherent electronic phases and a tool to actively manipulate many-body correlated states. Exploring their interplay and interdependence is crucial but remains underexplored. This review integratively cross-examines the atomic and electronic structures and transport properties of van der Waals-layered crystals ZrTe₃, 2H-TaS₂, and Cr₂Si₂Te₆, providing a comprehensive understanding and uncovering new discoveries and insights. A common observation from these crystals is that modifying the atomic and electronic interface structures of 2D van der Waals interfaces using heteroatoms significantly influences the emergence and stability of coherent phases, as well as phase-sensitive transport responses. In ZrTe₃, substitution and intercalation with Se, Hf, Cu, or Ni at the 2D vdW interface alter phonon–electron coupling, valence states, and the quasi-1D interface Fermi band, affecting the onset of CDW and SC, manifested as resistance upturns and zero-resistance states. We conclude here that these phenomena originate from dopant-induced variations in the lattice spacing of the quasi-1D Te chains of the 2D vdW interface, and propose an unconventional superconducting mechanism driven by valence fluctuations at the van Hove singularity, arising from quasi-1D lattice vibrations. Short-range in-plane electronic heterostructures at the vdW interface of Cr₂Si₂Te₆ result in a narrowed band gap. The sharp increase in in-plane resistance is found to be linked to the emergence and development of out-of-plane ferromagnetism. The insertion of 2D magnetic layers such as Mn, Fe, and Co into the vdW gap of 2H-TaS₂ induces anisotropic magnetism and associated transport responses to magnetic transitions. Overall, 2D vdW interface modification offers control over collective electronic behavior, transport properties, and their interplays, advancing fundamental science and nanoelectronic devices. Full article

We perform a comprehensive analysis of the correlated electronic structure reconstruction of the ferromagnetic CrSBr van der Waals (vdW) bulk crystal. Using generalized gradient approximation combined with dynamical mean-field theory, we show the minor role played by multi-orbital electron–electron interactions in semiconducting CrSBr. Our study is relevant to understanding the electronic structure within the ${Cr}^{3+}$ oxidation state with strongly spin-polarized $t_{2g}$ orbitals and should be applicable to other ferromagnetic vdW materials from bulk down to the low-dimensional limit. This work is relevant for understanding orbital and spin selectivity and its link to the memristor current–voltage characteristic of CrSBr for future neuromorphic computing. Full article

This study reports the structural and magnetic properties of Mn-doped ${\mathrm{Bi}}_2{\mathrm{Te}}_3$ thin films grown by magnetron sputtering. The films exhibit a ferromagnetic response that depends on the Mn doping concentration, as revealed by X-ray magnetic circular dichroism measurements. At an Mn concentration of ∼6.0%, a magnetic moment of (3.48 ± 0.25) ${\mathsf{\mu }}_{\mathrm{B}}$/Mn was determined. Structural analysis indicated the presence of a secondary ${\mathrm{MnTe}}_x$ phase, which complicates the interpretation of the magnetic properties. Additionally, the incorporation of Mn ions within the van der Waals gap and substitutional doping on Bi sites contributes to the observed complex magnetic properties. Intriguingly, a decrease in magnetic moment per Mn was observed with increasing Mn concentration, which is consistent with the formation of the intrinsic magnetic topological insulator ${\mathrm{MnBi}}_2{\mathrm{Te}}_4$. Full article

The discovery of two-dimensional (2D) van der Waals ferromagnetic materials opens up new avenues for making devices with high information storage density, ultra-fast response, high integration, and low power consumption. Fe₅GeTe₂ has attracted much attention because of its ferromagnetic transition temperature near room temperature. However, the investigation of its phase transition is rare until now. Here, we have successfully synthesized a single crystal of the layered ferromagnet Fe₅GeTe₂ by chemical vapor phase transport, soon after characterized by X-ray diffraction (XRD), DC magnetization M(T), and isotherm magnetization M(H) measurements. A paramagnetic to ferromagnetic transition is observed at ≈302 K (T_C) in the temperature dependence of the DC magnetic susceptibility of Fe₅GeTe₂. We found an unconventional potential spin glass state in the low-temperature regime that differs from the conventional spin glass states and Griffiths phase (GP) in the high-temperature regime. The physical mechanisms behind the potential spin glass state of Fe₅GeTe₂ at low temperatures and the Griffith phase at high temperatures need to be further investigated. Full article

Two-dimensional (2D) van der Waals (vdW) magnetic materials show potential for the advancement of high-density, energy-efficient electronic and spintronic applications in future memory and computation. Here, by using first-principles density functional theory (DFT) calculations, we predict a new 2D Janus nitride MXene MnCrNO₂ monolayer. Our results suggest that the optimized MnCrNO₂ monolayer possesses a hexagonal structure and exhibits good dynamical stability. The intrinsic monolayer MnCrNO₂ exhibits semiconductive properties and adopts a ferromagnetic ground state with an out-of-plane easy axis. It can sustain strain effects within a wide range of strains from −10% to +8%, as indicated by the phonon dispersion spectra. Under the biaxial tensile strain, a remarkable decrease in the bandgap of the MnCrNO₂ is induced, which is attributed to the distinct roles played by Mn and Cr in the VBM or CBM bands. Furthermore, when the compressive strain reaches approximately −8%, the magnetic anisotropy undergoes a transition from an out-of-plane easy axis to an in-plane easy axis. This change is mainly influenced by the efficient hybridization of the d orbitals, particularly in Mn atoms. Our study of the Janus MXene MnCrNO₂ monolayer indicates its potential as a promising candidate for innovative electronic and spintronic devices; this potential is expected to create interest in its synthesis. Full article

Currently, intercalation has become an effective way to modify the fundamental properties of two-dimensional (2D) van der Waals (vdW) materials. Using density functional theory, we systematically investigated the structures and electronic and magnetic properties of bilayer transition metal dichalcogenides (TMDs) intercalated with 3d TM atoms (TM = Sc–Ni), TM@BL_MS₂ (M = Mo, V). Our results demonstrate that all the studied TM@BL_MS₂s are of high stability, with large binding energies and high diffusion barriers of TM atoms. Interestingly, most TM@BL_MoS₂s and TM@BL_VS₂s are found to be stable ferromagnets. Among them, TM@BL_MoS₂s (TM = Sc, Ti, Fe, Co) are ferromagnetic metals, TM@BL_MoS₂ (TM = V, Cr) and TM@BL_VS₂ (TM = Sc, V) are ferromagnetic half-metals, and the remaining systems are found to be ferromagnetic semiconductors. Exceptions are found for Ni@BL_MoS₂ and Cr@BL_VS₂, which are nonmagnetic semiconductors and ferrimagnetic half-metals, respectively. Further investigations reveal that the electromagnetic properties of TM@BL_MoS₂ are significantly influenced by the concentration of intercalated TM atoms. Our study demonstrates that TM atom intercalation is an effective approach for manipulating the electromagnetic properties of two-dimensional materials, facilitating their potential applications in spintronic devices. Full article

Transition metal dichalcogenide (TMD) monolayers exhibit unique valleytronics properties due to the dependency of the coupled valley and spin state at the hexagonal corner of the first Brillouin zone. Precisely controlling valley spin-polarization via manipulating the electron population enables its application in valley-based memory or quantum technologies. This study uncovered the uncompensated spins of the antiferromagnetic nickel oxide (NiO) serving as the ferromagnetic (FM) order to induce valley spin-polarization in molybdenum disulfide (MoS₂) monolayers via the magnetic proximity effect (MPE). Spin-resolved photoluminescence spectroscopy (SR-PL) was employed to observe MoS₂, where the spin-polarized trions appear to be responsible for the MPE, leading to a valley magnetism. Results indicate that local FM order from the uncompensated surface of NiO could successfully induce significant valley spin-polarization in MoS₂ with the depolarization temperature approximately at 100 K, which is relatively high compared to the related literature. This study reveals new perspectives in that the precise control over the surface orientation of AFMs serves as a crystallographic switch to activate the MPE and the magnetic sustainability of the trion state is responsible for the observed valley spin-polarization with the increasing temperature, which promotes the potential of AFM materials in the field of exchange-coupled Van der Waals heterostructures. Full article

Two-dimensional (2D) van der Waals layered materials have been explored in depth. They can be vertically stacked into a 2D heterostructure and represent a fundamental way to explore new physical properties and fabricate high-performance nanodevices. However, the controllable and scaled growth of non-layered quasi-2D materials and their heterostructures is still a great challenge. Here, we report a selective two-step growth method for high-quality single crystalline CrTe/WSe₂ and CrTe/MoS₂ heterostructures by adopting a universal CVD strategy with the assistance of molten salt and mass control. Quasi-2D metallic CrTe was grown on pre-deposited 2D transition metal dichalcogenides (TMDC) under relatively low temperatures. A 2D CrTe/TMDC heterostructure was established to explore the interface’s structure using scanning transmission electron microscopy (STEM), and also demonstrate ferromagnetism in a metal–semiconductor CrTe/TMDC heterostructure. Full article

Layered chalcogenides containing 3d transition metals are promising for the development of two-dimensional nanomaterials with interesting magnetic properties. Both mechanical and solution-based exfoliation of atomically thin layers is possible due to the low-energy van der Waals bonds. In this paper, we present the synthesis and crystal structures of the Mn₂Ga₂S₅ and Mn₂Al₂Se₅ layered chalcogenides. For Mn₂Ga₂S₅, we report magnetic properties, as well as the exfoliation of nanofilms and nanoscrolls. The synthesis of both polycrystalline phases and single crystals is described, and their chemical stability in air is studied. Crystal structures are probed via powder X-ray diffraction and high-resolution transmission electron microscopy. The new compound Mn₂Al₂Se₅ is isomorphous with Mn₂Ga₂S₅ crystallizing in the Mg₂Al₂Se₅ structure type. The crystal structure is built by the ABCBCA sequence of hexagonal close-packing layers of chalcogen atoms, where Mn²⁺ and Al³⁺/Ga³⁺ species preferentially occupy octahedral and tetrahedral voids, respectively. Mn₂Ga₂S₅ exhibits an antiferromagnetic-like transition at 13 K accompanied by the ferromagnetic hysteresis of magnetization. Significant frustration of the magnetic system may yield spin-glass behavior at low temperatures. The exfoliation of Mn₂Ga₂S₅ layers was performed in a non-polar solvent. Nanolayers and nanoscrolls were observed using high-resolution transmission electron microscopy. Fragments of micron-sized crystallites with a thickness of 70–100 nanometers were deposited on a glass surface, as evidenced by atomic force microscopy. Full article

A large perpendicular magnetic anisotropy and a high Curie temperature (T_C) are crucial for the application of two-dimensional (2D) intrinsic ferromagnets to spintronic devices. Here, we investigated the electronic and magnetic properties of carrier-doped Van der Waals layered CrSX (X = Cl, Br, I) ferromagnets using first-principles calculations. It was found that hole doping can increase the magnitude of the magnetic anisotropy energy (MAE) and change the orientation of the easy magnetization axis at small doping amounts of 2.37 × 10¹³, 3.98 × 10¹², and 3.33 × 10¹²/cm² for CrSCl, CrSBr, and CrSI monolayers, respectively. The maximum values of the MAE reach 57, 133, and 1597 μeV/u.c. for the critical hole-doped CrSCl, CrSBr, and CrSI with spin orientation along the (001) direction, respectively. Furthermore, the Fermi energy level of lightly hole-doped CrSX (X = Cl, Br, I) moves into the spin-up valence band, leading to the CrSX (X = Cl, Br, I) magnetic semiconductor monolayer becoming first a half-metal and then a metal. In addition, the T_C can also be increased up to 305, 317, and 345 K for CrSCl, CrSBr, and CrSI monolayers at doping amounts of 5.94 × 10¹⁴, 5.78 × 10¹⁴, and 5.55 × 10¹⁴/cm², respectively. These properties suggest that the hole-doping process can render 2D CrSX (X = Cl, Br, I) monolayers remarkable materials for application to electrically controlled spintronic devices. Full article

Magnetoelectric (ME) magnetic field sensors utilize ME effects in ferroelectric ferromagnetic layered heterostructures to convert magnetic signals into electrical signals. However, the substrate clamping effect greatly limits the design and fabrication of ME composites with high ME coefficients. To reduce the clamping effect and improve the ME response, a flexible ME sensor based on PbZr_0.2Ti_0.8O₃ (PZT)/CoFe₂O₄ (CFO) ME bilayered heterostructure was deposited on mica substrates via van der Waals oxide heteroepitaxy. A saturated magnetization of 114.5 emu/cm³ was observed in the bilayers. The flexible sensor exhibited a strong ME coefficient of 6.12 V/cm·Oe. The local ME coupling has been confirmed by the evolution of the ferroelectric domain under applied magnetic fields. The flexible ME sensor possessed a stable response with high sensitivity to both AC and DC weak magnetic fields. A high linearity of 0.9988 and sensitivity of 72.65 mV/Oe of the ME sensor were obtained under flat states. The ME output and limit-of-detection under different bending states showed an inferior trend as the bending radius increased. A flexible proximity sensor has been demonstrated, indicating a promising avenue for wearable device applications and significantly broadening the potential application of the flexible ME magnetic field sensors. Full article

Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr₂Ge₂Te₆ and CrI₃, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (T_C) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics. Full article

Recently, there has been a growing interest in two-dimensional van der Waals (vdW) magnets owing to their unique two-dimensional magnetic phenomena and potential applications. Most vdW ferromagnets have the Curie temperature below room temperature, highlighting the need to explore how to enhance their magnetism. In our previous report, we successfully increased the Curie temperature of the prototypical vdW magnet Cr₂Ge₂Te₆ using a NiO overlayer. In layered materials, the presence of wrinkles is often observed and evaluating them using optical microscopy proves to be useful; however, there have been limited investigations into the optical constants of vdW magnets, hampering progress in understanding their optical properties. In this study, we present the optical constants of Cr₂Ge₂Te₆ obtained through ellipsometry measurements. To account for the presence of wrinkles, we model a vacuum region between the substrate and the vdW magnet, and we calculate the reflectivity as a function of wavelength and vacuum thickness to visualize the optical image. Furthermore, we discuss the relationship between the optical constants and the electronic structure of the material. Full article

We report on the far-infrared, temperature-dependent optical properties of a CrI${}_3$ transition metal halide single crystal, a van der Waals ferromagnet (FM) with a Curie temperature of 61 K. In addition to the expected phonon modes determined by the crystalline symmetry, the optical reflectance and transmittance spectra of CrI${}_3$ single crystals show many other excitations as a function of temperature as a consequence of the combination of a strong lattice anharmonicity and spin–phonon coupling. This complex vibrational spectrum highlights the presence of entangled interactions among the different degrees of freedom in CrI${}_3$. Full article