Search Results (196)

In this study, the influence of HfO₂ interlayer thickness on the performance of heteroepitaxial α-Ga₂O₃ layer-based metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors is examined. A thin HfO₂ interlayer enhances the interface quality and reduces the density of interface traps, thereby improving the performance of UVC photodetectors. The fabricated device with a 1 nm HfO₂ interlayer exhibited a significantly reduced dark current and higher photocurrent than a conventional metal–semiconductor–metal (MSM). Specifically, the 1 nm HfO₂ MISIM device demonstrated a photocurrent of 2.3 μA and a dark current of 6.61 pA at 20 V, whereas the MSM device exhibited a photocurrent of 1.1 μA and a dark current of 73.3 pA. Furthermore, the photodetector performance was comprehensively evaluated in terms of responsivity, response speed, and high-temperature operation. These results suggest that the proposed ultra-thin HfO₂ interlayer is an effective strategy for enhancing the performance of α-Ga₂O₃-based UVC photodetectors by simultaneously suppressing dark currents and increasing photocurrents and ultimately demonstrate its potential for stable operation under extreme environmental conditions. Full article

Epitaxial growth of β-Ga₂O₃ nanowires on silicon substrates was realized by the low-pressure chemical vapor deposition (LPCVD) method. The as-grown Si/Ga₂O₃ heterojunctions were employed in the Underwater DUV detection. It is found that the carrier type as well as the carrier concentration of the silicon substrate significantly affect the performance of the Si/Ga₂O₃ heterojunction. The p-Si/β-Ga₂O₃ (2.68 × 10¹⁵ cm⁻³) devices exhibit a responsivity of up to 205.1 mA/W, which is twice the performance of the devices on the n-type substrate (responsivity of 93.69 mA/W). Moreover, the devices’ performance is enhanced with the increase in the carrier concentration of the p-type silicon substrates; the corresponding device on the high carrier concentration substrate (6.48 × 10¹⁷ cm⁻³) achieves a superior responsivity of 845.3 mA/W. The performance enhancement is mainly attributed to the built-in electric field at the p-Si/n-Ga₂O₃ heterojunction and the reduction in the Schottky barrier under high carrier concentration. These findings would provide a strategy for optimizing carrier transport and interface engineering in solar-blind UV photodetectors, advancing the practical use of high-performance solar-blind photodetectors for underwater application. Full article

In this study, a UVC photodetector (PD) was fabricated by incorporating CsI into a conventional double-cation perovskite (FAMAPbI₃) to enhance its stability. The device utilized a methylammonium iodide post-treatment solution to fabricate CsFAMAPbI₃ perovskite thin films, which functioned as the primary light-absorbing layer in an NIP structure composed of n-type SnO₂ and p-type spiro-OMeTAD. Perovskite films were fabricated and analyzed as a function of the Cs concentration to optimize the Cs content. The results demonstrated that Cs doping improved the crystallinity and phase stability of the films, leading to their enhanced electron mobility and photodetection performance. The UVC PD with an optimum Cs concentration exhibited a responsivity of 58.2 mA/W and a detectivity of 3.52 × 10¹⁴ Jones, representing an approximately 7% improvement over conventional structures. Full article

This work presents a high-performance novel photodetector based on two-dimensional boron nitride (BN) nanosheets functionalized with gold nanoparticles (Au NPs), offering ultra-broadband photoresponse from 0.25 to 5.9 μm. Operating in both photovoltaic and photoconductive modes, the device features rapid response times (<0.5 ms), high responsivity (up to 1015 mA/W at 250 nm and 2.5 V bias), and thermal stability up to 100 °C. The synthesis process involved CO₂ laser exfoliation of hexagonal boron nitride, followed by gold NP deposition via RF sputtering and thermal annealing. Structural and compositional analyses confirmed the formation of a three-dimensional network of atomically thin BN nanosheets decorated with uniformly distributed gold nanoparticles. This architecture facilitates plasmon-enhanced absorption and efficient charge separation via heterojunction interfaces, significantly boosting photocurrent generation across the deep ultraviolet (DUV), visible, near-infrared (NIR), and mid-infrared (MIR) spectral regions. First-principles calculations support the observed broadband response, confirming bandgap narrowing induced by defects in h-BN and functionalization by gold nanoparticles. The device’s self-driven operation, wide spectral response, and durability under elevated temperatures underscore its strong potential for next-generation broadband, self-powered, and wearable sensing and optoelectronic applications. Full article

Two-dimensional (2D) materials have revolutionized the field of optoelectronics by offering exceptional properties such as atomically thin structures, high carrier mobility, tunable bandgaps, and strong light–matter interactions. These attributes make them ideal candidates for next-generation photodetectors operating across a broad spectral range—from ultraviolet to mid-infrared. This review comprehensively examines the recent progress in 2D material-based photodetectors, highlighting key material classes including graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP), MXenes, chalcogenides, and carbides. We explore their photodetection mechanisms—such as photovoltaic, photoconductive, photothermoelectric, bolometric, and plasmon-enhanced effects—and discuss their impact on critical performance metrics like responsivity, detectivity, and response time. Emphasis is placed on material integration strategies, heterostructure engineering, and plasmonic enhancements that have enabled improved sensitivity and spectral tunability. The review also addresses the remaining challenges related to environmental stability, scalability, and device architecture. Finally, we outline future directions for the development of high-performance, broadband, and flexible 2D photodetectors for diverse applications in sensing, imaging, and communication technologies. Full article

Polynitrogen compounds have broad applications in the field of high-energy materials, making the exploration of two-dimensional polynitride materials with both novel properties and practical utility a highly attractive research challenge. Through global structure search methods and first-principles theoretical calculations at the Perdew–Burke–Ernzerhof (PBE) level of density functional theory (DFT), the globally minimum-energy configuration of a novel planar BeN₃ monolayer (tetr-2D-BeN₃) is predicted. This material exhibits a planar quasi-isotropic structure containing pentagonal, hexagonal, and dodecagonal rings, as well as “S”-shaped N6 polymeric units, exhibiting a high energy density of 3.34 kJ·g⁻¹, excellent lattice dynamic stability and thermal stability, an indirect bandgap of 2.66 eV (HSE06), high carrier mobility, and ultraviolet light absorption capacity. In terms of mechanical properties, it shows a low in-plane Young’s stiffness of 52.3–52.9 N·m⁻¹ and a high in-plane Poisson’s ratio of 0.55–0.56, indicating superior flexibility. Furthermore, its porous structure endows it with remarkable selectivity for hydrogen (H₂) and argon (Ar) gas separation, achieving a maximum selectivity of up to 10²³ (He/Ar). Therefore, the tetr-2D-BeN₃ monolayer represents a multifunctional two-dimensional polynitrogen-based energetic material with potential applications in energetic materials, flexible semiconductor devices, ductile materials, ultraviolet photodetectors, and other fields, thereby expanding the design possibilities for polynitride materials. Full article

Heterojunctions are commonly used in optoelectronic devices to improve device performance. However, interface defects and lattice mismatch often hinder carrier transport and reduce efficiency, emphasizing the need for further exploration of diverse heterojunction structures. In this study, a heterojunction device constructed from Bi₂O₃ and Ga₂O₃ is demonstrated. The microstructures and photoelectrical properties of Bi₂O₃ and Ga₂O₃ thin films were investigated. Bi₂O₃ and Ga₂O₃ thin films show a bandgap of 3.19 and 5.10 eV. The Bi₂O₃/Ga₂O₃ heterojunction-based device demonstrates rectification characteristics, with a rectification ratio of 2.72 × 10³ at ±4.5 V and an ON/OFF ratio of 1.07 × 10⁵ (4.5/−3.9 V). Additionally, we fabricated a sandwich-structured photodetector based on the Bi₂O₃/Ga₂O₃ heterojunction and investigated its ultraviolet photoresponse performance. The photodetector exhibits low dark current (0.34 pA @ −3.9 V) and fast response rise/fall time (<40/920 ms). This work offers important perspectives on the advancement of large-area, low-cost, and high-speed Bi₂O₃ film-based heterojunction photodetectors. Full article

Non-radiative decay of surface plasmon (SP) offers a novel paradigm for efficient conversion of photons into carriers. However, the narrow bandwidth of SP has been a significant obstacle to the widespread applications. Previously, research and applications mainly focused on noble metals such as Au, Ag, and Cu. In this article, we report an Ag-Al alloy material, μ-Ag₃Al, in which the surface plasmon operating bandwidth is 1.7 times that of Ag and hot carrier transport properties are comparable with those of AuAl. The results show that μ-Ag₃Al allows efficient direct interband electronic transitions from ultraviolet (UV) to near infrared range. Spherical nanoparticles of μ-Ag₃Al exhibit the localized surface plasmon resonance (LSPR) effect in the ultraviolet region. Its surface plasmon polariton (SPP) shows strong non-radiative decay at 3.36 eV, which is favorable for the generation of high-energy hot carriers. In addition, the penetration depth of SPP in μ-Ag₃Al remains high across the UV to the near-infrared range. Moreover, the transport properties of hot carriers in μ-Ag₃Al are comparable with those in Al, borophene and Au-Al intermetallic compounds. These properties can provide guidance for the design of plasmon-based photodetectors, solar cells, and photocatalytic reactors. Full article

Self-powered ultraviolet photodetectors hold significant potential for diverse applications across both military and civilian fields. Owing to its wide bandgap, high electron mobility, and adaptability to various substrates, gallium oxide (Ga₂O₃) serves as a crucial material for fabricating self-powered ultraviolet photodetectors. Photodetectors based on p-n heterojunctions of conductive polymers and gallium oxide have great application potential benefiting from unique advantages of conductive polymers. This review provides an extensive overview of typical ultraviolet photodetectors based on conductive polymer/gallium oxide heterojunctions, focusing on the physical structure, fabrication process, and photoelectric properties of heterojunction devices formed by Ga₂O₃ with conductive polymers like polythiophene, polyaniline, and polycarbazole, etc. Different conductive polymers yield varying performance improvements in the fabricated devices: polythiophene/Ga₂O₃ devices exhibit high conductivity and flexible bandgap tuning to meet diverse wavelength detection needs; PANI/Ga₂O₃ devices feature simple fabrication and low cost, with doping control to enhance charge carrier transport efficiency; polycarbazole/Ga₂O₃ devices offer high thermal stability and efficient hole transport. Among them, the polythiophene/Ga₂O₃ device demonstrates the most superior overall performance, making it the ideal choice for high-performance Ga₂O₃-based photodetectors and a representative of such research. This review identifies the existing technical challenges and provides valuable insights for designing more efficient Ga₂O₃/conductive polymer heterojunction photodetectors. Full article

Recent advancements in ultraviolet (UV) photodetection technology have driven intensive research on zinc oxide (ZnO) nanomaterials due to their exceptional optoelectronic properties. This review systematically examines the fundamental detection mechanisms in ZnO-based UV photodetectors (UVPDs), including photoconductivity effects, the threshold dimension phenomenon and light-modulated interface barriers. Based on these mechanisms, a large surface barrier due to surface-adsorbed O₂ is generally constructed to achieve a high sensitivity. However, this improvement is obtained with a decrease in response speed due to the slow desorption and re-adsorption processes of surface O₂ during UV light detection. Various improvement strategies have been proposed to overcome this drawback and keep the high sensitivity, including ZnO–organic semiconductor interfacing, defect engineering and doping, surface modification, heterojunction and the Schottky barrier. The general idea is to modify the adsorption state of O₂ or replace the adsorbed O₂ with another material to build a light-regulated surface or an interface barrier, as surveyed in the third section. The critical trade-off between sensitivity and response speed is also addressed. Finally, after a summary of these mechanisms and the improvement methods, this review is concluded with an outlook on the future development of ZnO nanomaterial UVPDs. Full article

Using the Bridgman technique, GaSe single crystals were obtained which were mechanically split into plane-parallel plates with a wide range of thicknesses. By heat treatment in air at 820 °C and 900 °C, for 30 min and 6 h, micro- and nanocomposite layers of Ga₂Se₃–Ga₂O₃ and β–Ga₂O₃ (native oxide) with surfaces made of nanowires/nanoribbons were obtained. The obtained composite Ga₂Se₃–Ga₂O₃ and nanostructured β–Ga₂O₃ are semiconductor materials with band gaps of 2.21 eV and 4.60 eV (gallium oxide) and photosensitivity bands in the green–red and ultraviolet-C regions that peaked at 590 nm and 262 nm. For an applied voltage of 50 V, the dark current in the photodetector based on the nanostructured β–Ga₂O₃ layer was of 8.0 × 10⁻¹³ A and increased to 9.5 × 10⁻⁸ A upon 200 s excitation with 254 nm-wavelength radiation with a power density of 15 mW/cm². The increase and decrease in the photocurrent are described by an exponential function with time constants of τ_1r = 0.92 s, τ_2r = 14.0 s, τ_1d = 2.18 s, τ_2d = 24 s, τ_1r = 0.88 s, τ_2r = 12.2 s, τ_1d = 1.69 s, and τ_2d = 16.3 s, respectively, for the photodetector based on the Ga₂Se₃–Ga₂S₃–GaSe composite. Photoresistors based on the obtained Ga₂Se₃–Ga₂O₃ composite and nanostructured β–Ga₂O₃ layers show photosensitivity bands in the spectral range of electronic absorption bands of ozone in the same green–red and ultraviolet-C regions, and can serve as ozone sensors (detectors). Full article

Two-dimensional (2D) Xenes, including graphene where X represents C, Si, Ge, and Te, represent a groundbreaking class of materials renowned for their extraordinary electrical transport properties, robust photoresponse, and Quantum Spin Hall effects. With the growing interest in 2D materials, research on germanene-based systems remains relatively underexplored despite their potential for tailored optoelectronic functionalities. Herein, we demonstrate a facile and rapid chemical synthesis of tellurium-doped germanene hydride (Te-GeH) nanostructures (NSs), achieving precise atomic-scale control. The 2D Te-GeH NSs exhibit a broadband optical absorption spanning ultraviolet (UV) to visible light (VIS), which is a critical feature for multifunctional photodetection. Leveraging this property, we engineer photoelectrochemical (PEC) photodetectors via a simple drop-casting technique. The devices deliver excellent performance, including a high responsivity of 708.5 µA/W, ultrafast response speeds (92 ms rise, 526 ms decay), and a wide operational bandwidth. Remarkably, the detectors operate efficiently at zero-bias voltage, outperforming most existing 2D-material-based PEC systems, and function as self-powered broadband photodetectors. This work not only advances the understanding of germanene derivatives but also unlocks their potential for next-generation optoelectronics, such as energy-efficient sensors and adaptive optical networks. Full article

Recent advancements in metal/perovskite photodetectors have leveraged plasmonic effects to enhance the efficiency of photogenerated carrier separation. In this work, we present an innovative approach to designing heterostructure photodetectors that involved integrating a perovskite film with a plasmonic metasurface. Using finite-difference time-domain (FDTD) simulations, we investigated the formation of hybrid photonic–plasmonic modes and examined their quality factors in relation to loss mechanisms. Our results demonstrate that these hybrid modes facilitated strong light confinement within the perovskite layer, with significant intensity enhancement at the metal–perovskite interface—an ideal condition for efficient charge carrier generation. We also propose the use of low-bandgap perovskites for direct infrared passive detection and explore the potential of highly Stokes-shifted perovskites for active detection applications, including ultraviolet and X-ray radiation. Full article

Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability to integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, have not yet been utilized in DmPDs. In this work, we fabricate a high-performance DmPD based on a graphene/InP Van der Waals heterostructure in a facile way, achieving a broadband response from ultraviolet-visible to near-infrared wavelengths. The device incorporates two top electrodes contacting monolayer chemical vapor deposition (CVD) graphene and a bottom electrode on the backside of an InP substrate. By flexibly switching among these three electrodes, the as-fabricated DmPD can operate in a self-powered photovoltaic mode for energy-efficient high-speed imaging or in a biased photoconductive mode for detecting weak light signals, fully demonstrating its multifunctional detection capabilities. Specifically, in the self-powered photovoltaic mode, the DmPD leverages the vertically configured Schottky junction to achieve an on/off ratio of 8 × 10³, a responsivity of 49.2 mA/W, a detectivity of 4.09 × 10¹¹ Jones, and an ultrafast response, with a rising time (τ_r) and falling time (τ_f) of 2.8/6.2 μs. In the photoconductive mode at a 1 V bias, the photogating effect enhances the responsivity to 162.5 A/W. This work advances the development of InP-based multifunctional optoelectronic devices. Full article

As the demand for high voltage levels and fast charging rates in the electric power industry increases, the third-generation semiconductor materials typified by GaN with a wide bandgap and high electron mobility have become a central material in technological development. Nonetheless, thermal management challenges have persistently been a critical barrier to the extensive adoption of gallium-nitride-based devices. The integration of two-dimensional materials into GaN-based applications stands out as a significant strategy for tackling heat-dissipation problems. However, the direct preparation of two-dimensional materials on gallium nitride is rather challenging. In this study, high-quality h-BN was prepared directly on GaN films using plasma-enhanced chemical vapor deposition, which revealed that the introduction of appropriately sized active sites is key to the growth of h-BN. Owing to the high in-plane thermal conductivity of h-BN, the thermal conductivity of the sample has been enhanced from 218 W·m⁻¹ K⁻¹ to 743 W·m⁻¹ K⁻¹. Ultraviolet photodetectors were constructed based on the obtained h-BN/GaN heterostructure and maintained excellent detection performance under high-temperature conditions, with detectivity and responsivity at 200 °C of 2.26 × 10¹³ Jones and 1712.4 mA/W, respectively. This study presents innovative concepts and provides a foundation for improving the heat-dissipation capabilities of GaN-based devices, thereby promoting their broader application. Full article