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Advances in Optoelectronic Sensors
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Advances in Optoelectronic Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".

Deadline for manuscript submissions: closed (31 March 2025) | Viewed by 666

Special Issue Editor

Prof. Dr. Dayong Jiang

E-Mail Website
Guest Editor
Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
Interests: wide-bandgap semiconductors; UV photodetectors; optoelectronic devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Optoelectronic sensors have become indispensable tools in numerous fields, including environmental monitoring, biomedical diagnostics, industrial process control, and advanced imaging systems. Recent advancements in materials science, nanotechnology, and device engineering have provided new opportunities for the development of highly sensitive, fast-responding, and multifunctional optoelectronic sensors.

This Special Issue aims to showcase cutting-edge research and technological innovations in optoelectronic sensors. We welcome contributions that explore novel materials, innovative device structures, and emerging applications. The scope of this Special Issue includes, but is not limited to, the following topics:

  • Wide-bandgap semiconductor-based sensors
  • Low-dimensional materials for sensing applications
  • Plasmonic and metamaterial-enhanced sensors
  • Flexible and wearable optoelectronic devices
  • Integration of artificial intelligence with optoelectronic sensing
  • Novel fabrication techniques for sensor development
  • Advances in photodetector technologies
  • Multifunctional and multimodal sensing platforms

We welcome the submission of original research articles, comprehensive reviews, and short communications that address these exciting developments in the field of optoelectronic sensors. This Special Issue seeks to provide a platform for researchers to share their latest findings and foster collaborations in this rapidly evolving area. 

Prof. Dr. Dayong Jiang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronic sensors
  • wide bandgap semiconductors
  • low-dimensional materials
  • photodetectors
  • plasmonic sensors
  • flexible electronics
  • multifunctional sensors
  • nanomaterials
  • artificial intelligence
  • sensor fabrication

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (1 paper)

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Research

14 pages, 3873 KiB  
Article
UV-Vis-NIR Broadband Dual-Mode Photodetector Based on Graphene/InP Van Der Waals Heterostructure
by Mingyang Shen, Hao Liu, Qi Wang, Han Ye, Xueguang Yuan, Yangan Zhang, Bo Wei, Xue He, Kai Liu, Shiwei Cai, Yongqing Huang and Xiaomin Ren
Sensors 2025, 25(7), 2115; https://doi.org/10.3390/s25072115 - 27 Mar 2025
Viewed by 439
Abstract
Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability to integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, have not yet been utilized in DmPDs. In this work, we [...] Read more.
Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability to integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, have not yet been utilized in DmPDs. In this work, we fabricate a high-performance DmPD based on a graphene/InP Van der Waals heterostructure in a facile way, achieving a broadband response from ultraviolet-visible to near-infrared wavelengths. The device incorporates two top electrodes contacting monolayer chemical vapor deposition (CVD) graphene and a bottom electrode on the backside of an InP substrate. By flexibly switching among these three electrodes, the as-fabricated DmPD can operate in a self-powered photovoltaic mode for energy-efficient high-speed imaging or in a biased photoconductive mode for detecting weak light signals, fully demonstrating its multifunctional detection capabilities. Specifically, in the self-powered photovoltaic mode, the DmPD leverages the vertically configured Schottky junction to achieve an on/off ratio of 8 × 103, a responsivity of 49.2 mA/W, a detectivity of 4.09 × 1011 Jones, and an ultrafast response, with a rising time (τr) and falling time (τf) of 2.8/6.2 μs. In the photoconductive mode at a 1 V bias, the photogating effect enhances the responsivity to 162.5 A/W. This work advances the development of InP-based multifunctional optoelectronic devices. Full article
(This article belongs to the Special Issue Advances in Optoelectronic Sensors)
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