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Advances in Optoelectronic Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".

Deadline for manuscript submissions: closed (31 March 2025) | Viewed by 561

Special Issue Editor


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Guest Editor
Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
Interests: wide-bandgap semiconductors; UV photodetectors; optoelectronic devices
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Special Issue Information

Dear Colleagues,

Optoelectronic sensors have become indispensable tools in numerous fields, including environmental monitoring, biomedical diagnostics, industrial process control, and advanced imaging systems. Recent advancements in materials science, nanotechnology, and device engineering have provided new opportunities for the development of highly sensitive, fast-responding, and multifunctional optoelectronic sensors.

This Special Issue aims to showcase cutting-edge research and technological innovations in optoelectronic sensors. We welcome contributions that explore novel materials, innovative device structures, and emerging applications. The scope of this Special Issue includes, but is not limited to, the following topics:

  • Wide-bandgap semiconductor-based sensors
  • Low-dimensional materials for sensing applications
  • Plasmonic and metamaterial-enhanced sensors
  • Flexible and wearable optoelectronic devices
  • Integration of artificial intelligence with optoelectronic sensing
  • Novel fabrication techniques for sensor development
  • Advances in photodetector technologies
  • Multifunctional and multimodal sensing platforms

We welcome the submission of original research articles, comprehensive reviews, and short communications that address these exciting developments in the field of optoelectronic sensors. This Special Issue seeks to provide a platform for researchers to share their latest findings and foster collaborations in this rapidly evolving area. 

Prof. Dr. Dayong Jiang
Guest Editor

Manuscript Submission Information

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Keywords

  • optoelectronic sensors
  • wide bandgap semiconductors
  • low-dimensional materials
  • photodetectors
  • plasmonic sensors
  • flexible electronics
  • multifunctional sensors
  • nanomaterials
  • artificial intelligence
  • sensor fabrication

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Published Papers (1 paper)

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Research

14 pages, 3873 KiB  
Article
UV-Vis-NIR Broadband Dual-Mode Photodetector Based on Graphene/InP Van Der Waals Heterostructure
by Mingyang Shen, Hao Liu, Qi Wang, Han Ye, Xueguang Yuan, Yangan Zhang, Bo Wei, Xue He, Kai Liu, Shiwei Cai, Yongqing Huang and Xiaomin Ren
Sensors 2025, 25(7), 2115; https://doi.org/10.3390/s25072115 - 27 Mar 2025
Viewed by 346
Abstract
Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability to integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, have not yet been utilized in DmPDs. In this work, we [...] Read more.
Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability to integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, have not yet been utilized in DmPDs. In this work, we fabricate a high-performance DmPD based on a graphene/InP Van der Waals heterostructure in a facile way, achieving a broadband response from ultraviolet-visible to near-infrared wavelengths. The device incorporates two top electrodes contacting monolayer chemical vapor deposition (CVD) graphene and a bottom electrode on the backside of an InP substrate. By flexibly switching among these three electrodes, the as-fabricated DmPD can operate in a self-powered photovoltaic mode for energy-efficient high-speed imaging or in a biased photoconductive mode for detecting weak light signals, fully demonstrating its multifunctional detection capabilities. Specifically, in the self-powered photovoltaic mode, the DmPD leverages the vertically configured Schottky junction to achieve an on/off ratio of 8 × 103, a responsivity of 49.2 mA/W, a detectivity of 4.09 × 1011 Jones, and an ultrafast response, with a rising time (τr) and falling time (τf) of 2.8/6.2 μs. In the photoconductive mode at a 1 V bias, the photogating effect enhances the responsivity to 162.5 A/W. This work advances the development of InP-based multifunctional optoelectronic devices. Full article
(This article belongs to the Special Issue Advances in Optoelectronic Sensors)
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