Search Results (817)

CdTe nanocrystals (NCs) have emerged as a promising active layer for efficient thin-film solar cells due to their outstanding optical properties and simple processing techniques. However, the low hole concentration and high resistance in the CdTe NC active layer lead to high carrier recombination in the back contact. Herein, we developed a novel 2-iodothiophene as a wet etching solution to treat the surface of CdTe NC. We found that surface treatment using 2-iodothiophene leads to reduced interface defects and improves carrier mobility simultaneously. The surface properties of CdTe NC thin films after iodide salt treatment are revealed through surface element analysis, space charge limited current (SCLC) studies, and energy level investigations. The CdTe NC solar cells with 2-iodothiophene treatment achieved power conversion efficiency (PCE) of 4.31% coupled with a higher voltage than in controlled devices (with NH₄I-treated ones, 3.08% PCE). Full article

A wide-bandgap AgInGaSe₂ (AIGS) thin film was fabricated using molecular beam epitaxy (MBE) via a three-stage method. The influence of Selenium (Se) pressure on the properties of AIGS films and solar cells was studied in detail. It was found that Se pressure played a very important role during the fabrication process, whereby Se pressure was varied from 0.8 × 10⁻³ Torr to 2.5 × 10⁻³ Torr in order to specify the effect of Se pressure. A two-stage mechanism during the production of AIGS solar cells was concluded according to the experimental results. With an increase in Se pressure, the grain size significantly increased due to the supply of the Ag–Se phase; the superficial roughness also increased. When Se pressure was increased to 2.1 × 10⁻³ Torr, the morphology of AIGS changed abruptly and clear grain boundaries were observed with a typical grain size of over 1.5 μm. AIGS films fabricated with a low Se pressure tended to show a higher bandgap due to the formation of anti-site defects such as In and Ga on Ag sites as a result of the insufficient Ag–Se phase. With an increase in Se pressure, the crystallinity of the AIGS film changed from the (220)-orientation to the (112)-orientation. When Se pressure was 2.1 × 10⁻³ Torr, the AIGS solar cell demonstrated its best performance of about 9.6% (Voc: 810.2 mV; Jsc: 16.7 mA/cm²; FF: 71.1%) with an area of 0.2 cm². Full article

This study investigates the influence of temperature on the linear and nonlinear optical properties of ternary organic thin films for solar cell applications. Three-component organic thin films (poly({4,8-bis[(2-ethylhexyl)oxy]benzo [1,2-b:4,5-b′]dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl}) and (poly([2,6′-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,3-b]dithiophene]{3-fluoro-2[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}), marked PTB7 and PTB7th- donors, PCBM, phenyl-C61-butyric acid methyl ester acceptor, and Y5: 2,2′-((2Z,2′Z)-((12,13-bis(2-ethylhexyl)-3,9-diundecyl-12,13-dihydro[1,2,5]thiadiazolo[3,4e]thieno[2′,3′:4′,5′] thieno[2′,3′:4,5]pyrrolo[3,2-g] thieno[2′,3′:4,5]thieno[3,2-b]indole-2,10-diyl)bis(methanylylidene))bis(3-oxo-2,3-dihydro1H-indene-2,1-diylidene))dimalononitrile) and Y6 non-fullerene acceptors: (2,2′-((2Z,2′Z)-((12,13-bis(2-ethylhexyl)-3,9-diundecyl-12,13- dihydro-[1,2,5]thiadiazolo[3,4- e] thieno [2,″3″:4′,5′]thieno [2′,3′:4,5]), non-fullerene acceptors, were analyzed using spectroscopic ellipsometry and third-harmonic generation techniques across a temperature range of 30 °C to 120 °C. The absorption spectra of the ternary layers remained largely stable with temperature, but ellipsometry revealed temperature-dependent changes in layer thickness (a few percent increase during heating) and variations in refractive index and extinction coefficients, suggesting modest structural alterations. Analysis using a gradient model indicated that film composition varies with thickness. Third-harmonic generation measurements showed a decrease in χ⁽³⁾ after annealing, with the most significant change observed in the PTB7th:Y5:PCBM layer. Full article

This study presents the influence of pH control agents and pH value on the physical properties of ZnO thin films obtained by chemical bath deposition. ZnO thin films were synthesized on glass substrates using precursor solutions of different pHs prepared from two bases: sodium hydroxide (NaOH) and ammonia (NH₃). The effect of pH values on the morphological, structural, and optical properties of ZnO thin films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and UV–Visible spectroscopy. XRD results showed that all the synthesized ZnO thin films are polycrystalline and crystallize in a hexagonal wurtzite structure. The crystallite size, calculated using the Debye–Scherrer formula, varied from 10.50 nm to 11.69 nm for ZnO thin films obtained with NH₃ and from 20.79 nm to 27.76 nm for those obtained with NaOH. FTIR analysis confirmed the presence of functional groups. SEM images indicated that not only the base but also the pH affects the morphology of the films, giving rise to different granular shapes. Overall, the ZnO thin films obtained with NaOH looked more mesoporous compared to those obtained with NH₃. Optical characterization results showed that whatever the base used, the pH of the precursor solution affected the ZnO thin film transmittance. Films synthesized with NH₃ exhibited the best transmittance (80%) at pH 8.5, while the best transmittance (81%) of films synthesized with NaOH was obtained at pH 8 in the visible region. Based on optical and morphological properties, ZnO films obtained from NH₃ at pH 8.5 are found to be more suitable as photoanodes in dye-sensitized solar cells. Full article

The tin dioxide (SnO₂) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen–hydrogen mixed atmosphere on their surface morphology, optical behavior, and electrical performance. The SnO₂ films were characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall effect measurements. With increasing annealing temperatures, the SnO₂ films exhibited enhanced crystallinity, a higher oxygen vacancy (O_V) peak area ratio, and improved mobility and carrier concentration. These enhancements make the annealed SnO₂ films highly suitable as electron transport layers (ETLs) in perovskite solar cells (PSCs), providing practical guidance for the design of high-performance PSCs. Full article

Se-doped CdTe thin films were grown employing a simple two-electrode electrochemical deposition method using glass/tin-doped indium oxide (glass/ITO). Cadmium acetate dihydrate [Cd (CH₃CO₂)₂. 2H₂O], selenium dioxide (SeO₂), and tellurium dioxide (TeO₂) were used as precursors. Instruments including X-ray diffraction for structural investigation, UV-Vis spectrophotometry for optical properties, and scanning probe microscopy for morphological properties were employed to investigate the physico-chemical characteristics of the resulting Se-doped CdTe thin-film. The films are polycrystalline with a cubic phase, according to X-ray diffraction (XRD) data. More ions are deposited on the substrate, which makes the material more crystalline and intensifies the characteristic peaks that are seen. It is observed from the acquired optical characterization that the film’s bandgap is greatly influenced by the deposition time. The bandgap dropped from 1.92 to 1.62 as the deposition period increased from 25 to 45 min, making the film more transparent and absorbing less light at shorter deposition durations. Images from scanning electron microscopy (SEM) show that the surface morphology is homogenous with closely packed grains and that the grain forms become less noticeable as the deposition time increases. This work is novel in that it investigates the influence of the deposition time on the structural, optical, and morphological properties of Se-doped CdTe thin films deposited using a cost-effective, simplified two-electrode electrochemical method—a fabrication route that remains largely unexplored for this material system. Full article

Kesterite (CZTS/CZTSSe) thin-film solar cells are considered an eco-friendly, earth-abundant, and low-cost photovoltaic technology that can fulfill our future energy needs. Due to its outstanding properties including tunable bandgap and high absorption coefficient, the power conversion efficiency (PCE) has reached over 14%. However, toxic cadmium sulfide (CdS) is commonly used as an n-type buffer layer in kesterite thin-film solar cells (KTFSCs) to form a better p–n junction with the p-type CZTS/CZTSSe absorber. In addition to its toxicity, the CdS buffer layer shows parasitic absorption at low wavelengths (400–500 nm) owing to its low bandgap (2.4 eV). For the last few years, several efforts have been made to substitute CdS with an eco-friendly, Cd-free, cost-effective buffer layer with alternative large-bandgap materials such as ZnSnO, Zn (O, S), In₂Se₃, ZnS, ZnMgO, and TiO₂, which showed significant advances. Herein, we summarize the key findings of the research community using a Cd-free buffer layer in KTFSCs to provide a current scenario for future work motivating researchers to design new materials and strategies to achieve higher performance. Full article

The recent focus on wide-bandgap absorbers for tandem solar cell configurations and photovoltaic materials with high absorption coefficients for indoor photovoltaics has prompted a renewed interest in selenium. Over the past few years, the efficiency of Se solar cells has improved significantly, bringing the prospect of industrial production closer to reality. This study presents an innovative vapor transport deposition (VTD) technique for the scalable and cost-effective fabrication of Se thin films. The prepared Se thin films were characterized, and the results show that the VTD method is capable of producing dense and well-crystallized Se thin films. Se solar cells with a structure of glass/FTO/TiO₂/Se/Au were fabricated to evaluate the impact of substrate temperature on device performance. The optimal performance was achieved on the hot side of the substrate during deposition, with a power conversion efficiency (PCE) of 2.56%. This study provides a promising pathway for the low-cost, high-throughput manufacturing of high-performance Se solar cells, facilitating their potential industrial implementation. Full article

Three-dimensional/two-dimensional bilayered perovskite solar cells have recently become popular for ensuring high efficiency and promising long-term stability. The 3D/2D bilayered perovskite thin film is mainly used in regular (n-i-p)-type perovskite solar cells. In this review, our discussion also focuses on the regular kind of perovskite solar cells. In a 3D/2D bilayered perovskite thin film, the 2D perovskite layer works as a capping layer on top of the 3D perovskite thin film. The 2D capping layer heals the surface and bulk defects of the 3D perovskite thin film. The 2D layer interfaces between the 3D perovskite and hole transport layers. The 2D layer also acts as a shield against moisture and heat. This layer also inhibits ion migration between layers (3D perovskite and back contact). This review lists and investigates different organic precursors deposited as a 2D capping layer on top of the 3D perovskite thin film to explore their impact on the solar cell’s efficiency and stability. The possible challenges and remedies in growing a 2D capping layer on top of the 3D perovskite thin film are also discussed. Full article

Copper antimony sulfide (CuSbS₂) is an affordable and eco-friendly solar absorber with an optimal bandgap and high absorption coefficient, and it stands out as a promising candidate for thin-film solar cells. This study investigates the effects of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), and glass substrates on the microstructural, morphological, and optical properties of CuSbS₂ (CAS) layers synthesized via spray pyrolysis. X-ray Diffraction (XRD) and Raman spectroscopy analyses revealed that CAS phases formed on ITO and FTO substrates exhibited a phase composition without additional copper phases. However, the CAS layer on glass contained a copper sulfide (CuS) phase, which can be detrimental for solar cell applications. Furthermore, the influences of the substrate morphology and contact angle on the growth mechanisms of CAS layers was examined, highlighting the relationship between the substrate micromorphology and the resultant film characteristics. Advanced image processing techniques applied to Atomic Force Microscopy (AFM) images of the substrate surfaces facilitated a comprehensive comparison with the surface characteristics of the CAS films grown on those substrates. Field Emission Scanning Electron Microscopy (FESEM) indicated that CAS layers on ITO possessed larger grains than FTO, whereas those on FTO exhibited lower roughness with a more uniform grain distribution. Notably, the optical properties of the CAS layers correlated strongly with their microstructural and morphological characteristics. This work highlights the critical influence of substrate choice on the growth and characteristics of CAS layers through a comparative analysis. Full article

Printing techniques have been instrumental in developing flexible and stretchable electronics, including organic light-emitting diode displays, organic thin film transistor arrays, electronic skins, organic electrochemical transistors for biosensors and neuromorphic computing, as well as flexible solar cells with low-cost processes such as inkjet printing, ultrasonic nozzle, roll-to-roll coating. The rise of additive manufacturing provides even more opportunities to print electronics in automated and customizable ways. In this work, we will review the current technologies of printing electronics (including printed batteries, supercapacitors, fuel cells, and sensors), especially with 3D printing. In this age of ongoing AI revolution, the application of AI algorithms is discussed in terms of combining them with 3D printing and electronics printing for a future with automated optimization, sustainable design, and customizable and scalable manufacturing. Full article

The rising demand for sustainable energy solutions has spurred the development of advanced materials for photovoltaic devices. Among these, transparent conductive oxides (TCOs) play a pivotal role in enhancing device efficiency, particularly in silicon-based solar cells. However, the reliance on indium-based TCOs like ITO raises concerns over cost and material scarcity, prompting the search for more abundant and scalable alternatives. This study focuses on the fabrication and characterization of aluminum-doped zinc oxide (ZnO:Al, AZO) thin films deposited via Atomic Layer Deposition (ALD), targeting their application as transparent conductive oxides in silicon solar cells. The ZnO:Al thin films were synthesized by alternating supercycles of ZnO and Al₂O₃ depositions at 225 °C, allowing precise control of composition and thickness. Structural, optical, and electrical properties were assessed using Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), Raman spectroscopy, spectroscopic ellipsometry, and four-point probe measurements. The results confirmed the formation of uniform, crack-free ZnO:Al thin films with a spinel-type ZnAl₂O₄ crystalline structure. Optical analyses revealed high transparency (more than 80%) and tunable refractive indices (1.64 ÷ 1.74); the energy band gap was 2.6 ÷ 3.07 eV, while electrical measurements demonstrated low sheet resistance values, reaching 85 Ω/□ for thicker films. This combination of optical and electrical properties underscores the potential of ALD-grown AZO thin films to meet the stringent demands of next-generation photovoltaics. Integration of Zn:Al thin films into silicon solar cells led to an optimized photovoltaic performance, with the best cell achieving a short-circuit current density of 36.0 mA/cm² and a power conversion efficiency of 15.3%. Overall, this work highlights the technological relevance of ZnO:Al thin films as a sustainable and cost-effective alternative to conventional TCOs, offering pathways toward more accessible and efficient solar energy solutions. Full article

The tungsten (W)-modified TiO₂ films were fabricated on the fluorine-doped TiO₂ substrates using the sol–gel process. The influences of W dopant on the photovoltaic properties of the tungsten-modified TiO₂ DSSC were analyzed, too. The crystallization and dye absorption of tungsten-modified TiO₂ thin films increased more than those of the undoped TiO₂ thin films. Furthermore, the optimal performances of the V_oc, J_sc, fill factor, and efficiency of the DSSC with tungsten-modified TiO₂ thin films were 0.68 V, 16.28 mA/cm², 65.5%, and 7.03%, respectively. The enhancement was mainly due to the improved crystallinity and increased dye adsorption of the tungsten-modified TiO₂ thin films, which contributed to improving the efficiency of the dye-sensitized solar cell. Full article

BiFeO₃ is a fascinating material with a rhombohedral crystal structure (R3c) at room temperature. This unique structure makes it suitable for use in solar cells, as the interaction of light with the polarized octahedral enhances electron movement. Evaluating its properties on different substrates helps to identify the specific characteristics of thin films. The thin films presented in this work were deposited using reactive RF cathodic sputtering with a homemade 1-inch diameter ceramic target. Their morphology, phase composition, optical, piezoelectric, and ferroelectric properties were evaluated. Fluorine Tin Oxide (FTO) and Indium Tin Oxide (ITO) substrates were used for the presented thin films. The thin films deposited on FTO displayed the “butterfly” behavior typically associated with ferroelectric materials. A d₃₃ value of 2.71 nm/V was determined using SSPFM-DART mode. In contrast, the thin films deposited on ITO at 550 °C reached a maximum saturation polarization of 40.89 μC/cm² and a remnant polarization of 44.87 μC/cm², which are the highest values recorded, but did not present the typical “butterfly” behavior. As the grain size increased, the influence of charge defects became more pronounced, leading to an increase in the leakage current. Furthermore, the presence of secondary phases also contributed to this behavior. Full article

Perovskite, as a promising candidate for the next generation of photovoltaic materials, has attracted extensive attention. To date, the power conversion efficiency (PCE) of perovskite solar cells (PSCs) has reached 26.7%, which is competitive with that of commercial silicon cells. However, high PCE is usually achieved in devices with a small surface area fabricated by the spin-coating method. Perovskite thin films, as the most important layer, suffer from poor uniformity and crystallization caused by the large-area fabrication process, which leads to a dramatic drop in efficiency and exhibits poor reproducibility. Here, we summarize common architectures of PSC and perovskite solar modules (PSMs), as well as analyzing the reasons for efficiency loss on the modules. Subsequently, the review describes the mechanism of perovskite growth in detail, and then sums up recent research on small-to-large-area perovskite devices. Large-area fabrication methods mainly include blade coating, slot-die coating, spray-coating, inkjet printing, and screen printing. Moreover, we compare the advantages and disadvantages of each method and their corresponding mechanisms and research progress. The review aims to provide potential logical conclusions and directions for the commercial large-area perovskite fabrication process. Full article