Search Results (572)

Multilayer thin films composed of cobalt (Co), carbon (C), and chromium (Cr) possess promising electromagnetic properties, yet the combined Co–C–Cr system remains underexplored, particularly regarding its performance as a microwave absorber. Existing research has primarily focused on binary Co–C or Co–Cr compositions, leaving a critical knowledge gap in understanding how ternary multilayer architectures influence electromagnetic behavior. This study addresses this gap by investigating the structure, phase composition, and microwave absorption performance of Co–C–Cr multilayer coatings fabricated via magnetron sputtering onto porous silicon substrates. This study compares four-layer and eight-layer configurations to assess how multilayer architecture affects impedance matching, reflection coefficients, and absorption characteristics within the 8.2–12.4 GHz frequency range. Structural analyses using X-ray diffraction and transmission electron microscopy confirm the coexistence of amorphous and nanocrystalline phases, which enhance absorption through dielectric and magnetic loss mechanisms. Both experimental and simulated results show that increasing the number of layers improves impedance gradients and broadens the operational bandwidth. The eight-layer coatings demonstrate a more uniform absorption response, while four-layer structures exhibit sharper resonant minima. These findings advance the understanding of ternary multilayer systems and contribute to the development of frequency-selective surfaces and broadband microwave shielding materials. Full article

In the Internet of Things (IoT) era, the demand for cost-effective, flexible, wearable antennas and circuits has been growing. Accordingly, screen-printing techniques are becoming more popular due to their lower costs and high-volume manufacturing. This paper presents and investigates a full-screen-printed 1 × 4 Quasi-Yagi-Uda antenna array on a high-transparency flexible Zeonor thin-film substrate for emerging 26 GHz band (24.25–27.55 GHz) 5G applications. As part of this study, screen-printing implementation rules are developed by properly managing ink layer thickness on a transparent flexible Zeonor thin-film dielectric to achieve a decent antenna array performance. In addition, a screen-printing repeatability study has been carried out through a performance comparison of 24 antenna array samples manufactured by our research partner from CEA-Liten Grenoble. Despite the challenging antenna array screen printing at higher frequencies, the measured results show a good antenna performance as anticipated from the traditional subtractive printed circuit board (PCB) manufacturing process using standard substrates. It shows a wide-band matched input impedance from 22–28 GHz (i.e., 23% of relative band-width) and a maximum realized gain of 12.8 dB at 27 GHz. Full article

Palladium (Pd) and titanium (Ti) exhibit opposite dielectric responses upon hydrogenation, with stronger effects observed in the near-infrared (NIR) region. Leveraging this contrast, we investigated Ti/Pd bilayer thin films as a platform for NIR hydrogen sensing—particularly at telecommunication-relevant wavelengths, where such devices have remained largely unexplored. Ti/Pd bilayers coated with Teflon AF (TAF) and fabricated via sequential electron-beam and thermal evaporation were characterized using optical transmission measurements under repeated hydrogenation cycles. The Ti (5 nm)/Pd (x = 2.5 nm)/TAF (30 nm) architecture showed a 2.7-fold enhancement in the hydrogen-induced optical contrast at 1550 nm compared to Pd/TAF reference films, attributed to the hydrogen ion exchange between the Ti and Pd layers. The optimized structure, with a Pd thickness of x = 1.9 nm, exhibited hysteresis-free sensing behavior, a rapid response time (${\mathrm{t}}_{90}$ < 0.35 s at 4% ${\mathrm{H}}_2$), and a detection limit below 10 ppm. It also demonstrated excellent selectivity with negligible cross-sensitivity to $\mathrm{C}{\mathrm{O}}_2$, $\mathrm{C}{\mathrm{H}}_4$, and CO, as well as high durability, showing less than 6% signal degradation over 135 hydrogenation cycles. These findings establish a scalable, room-temperature NIR hydrogen sensing platform with strong potential for deployment in automotive, environmental, and industrial applications. Full article

This study presents the successful fabrication of lead zirconate titanate (PZT) thin films on silicon (Si) substrates using a hybrid deposition method combining spin-coating and RF sputtering techniques. Initially, a PZT layer was deposited through four successive spin-coating cycles, followed by an additional layer formed via RF sputtering. The resulting multilayer structure was annealed at ${700 }^{°}$C for 2 h to improve crystallinity. Comprehensive material characterization was conducted using XRD, SEM, cross-sectional SEM, EDX, and UV–VIS absorbance spectroscopy. The analyses confirmed the formation of a well-crystallized perovskite phase, a uniform surface morphology, and an optical band gap of approximately 3.55 eV, supporting its suitability for sensing applications. Building upon these findings, a multilayer PZT-based touch sensor was fabricated and electrically characterized. Low-frequency I–V measurements demonstrated consistent and repeatable polarization behavior under cyclic loading conditions. In addition, $\left|Z\right|$–f measurements were performed to assess the sensor’s dynamic electrical behavior. Although expected dielectric responses were observed, the absence of distinct anti-resonance peaks suggested non-idealities linked to ${\mathrm{Ag}}^{+}$ ion diffusion from the electrode layers. To account for these effects, the classical Butterworth–Van Dyke (BVD) equivalent circuit model was extended with additional inductive and resistive components representing parasitic pathways. This modified model provided excellent agreement with the measured impedance and phase data, offering deeper insight into the interplay between material degradation and electrical performance. Overall, the developed sensor structure exhibits strong potential for use in piezoelectric sensing applications, particularly for tactile and pressure-based interfaces. Full article

By embedding an aluminum-laminated layer within La₂O₃ thin films and subjecting them to high-temperature rapid thermal annealing, a La₂O₃/LaAl_xO_y/La₂O₃ sandwich dielectric was formed. This structure enhances the interface properties with both the silicon substrate and the metal gate electrode, improving current conduction. Comprehensive analysis using X-ray Photoelectron Spectroscopy (XPS) revealed that this novel process not only facilitates the formation of a high-quality lanthanum aluminate layer, as indicated with Al 2p peak at 74.5 eV, but also effectively suppresses silicate layer growth, as supported by the weak Si-O signal from both the Si 2s (153.9 eV) and O 1s (533 eV) peaks at the dielectric/Si interface in the Al-laminated samples. Fourier Transform Infrared (FTIR) spectroscopy revealed a significant reduction in the OH absorption peak at 3608 cm⁻¹ OH-related band centered at 3433 cm⁻¹. These improvements are attributed to the aluminum-laminated layer, which blocks oxygen and hydroxyl diffusion, the LaAl_xO_y layer scavenging interface silicon oxide, and the consumption of oxygen during LaAl_xO_y formation under thermal annealing. Electrical measurements confirmed that the dielectric films exhibited significantly lower interface and oxide trap densities compared to native La₂O₃ samples. This approach provides a promising method for fabricating high-quality lanthanum-based gate dielectric films with controlled dielectric/substrate interactions, making it suitable for nano-CMOS and memristive device applications. Full article

Silicon oxynitride (SiO_xN_y, hereafter denoted as SiON) thin films represent an intermediate phase between silicon dioxide (SiO₂) and silicon nitride (Si₃N₄). Through systematic compositional ratio adjustments, the refractive index can be precisely tuned across a wide range from 1.45 to 2.3. However, the underlying mechanism governing the influence of elemental composition on film structural quality remains insufficiently understood. To address this knowledge gap, we systematically investigate the effects of key industrial plasma-enhanced chemical vapor deposition (PECVD) parameters—including precursor gas selection and flow rate ratios—on SiON film properties. Our experimental measurements reveal that stoichiometric SiO_xN_y (x = y) achieves a minimum surface roughness of 0.18 nm. As oxygen content decreases and nitrogen content increases, progressive replacement of Si-O bonds by Si-N bonds correlates with increased structural defect density within the film matrix. Capacitance–voltage (C-V) characterization demonstrates a corresponding enhancement in device capacitance following these compositional modifications. Recent studies confirm that controlled modulation of film stoichiometry enables precise tailoring of dielectric properties and capacitive behavior, as demonstrated in SiON-based power electronics, thereby advancing applications in related fields. Full article

Porous PZT films offer significant potential due to tunable electromechanical properties, yet the polarization behavior remains insufficiently understood because of discontinuous morphology and domain structures. In this work, we study the impact of porosity on the spontaneous polarization and electromechanical response of PZT thin films fabricated using a multilayer spin-coating technique with various concentrations (0–14%) of polyvinylpyrrolidone (PVP) as a porogen. Atomic force microscopy (AFM) and piezoresponse force microscopy (PFM) were employed to analyze the local topography, domain distribution, and polarization behavior of the films. The results indicate that increasing porosity leads to substantial changes in grain morphology, dielectric permittivity, and polarization response. Films with higher porosity exhibit a more fragmented polarization distribution and reduced piezoresponse, while certain orientations demonstrate enhanced domain mobility. Despite the decrease in overall polarization, the local coercive field remains relatively stable, suggesting structural stability during the local polarization switching. The findings highlight the crucial role of grain boundaries and local charge redistribution in determining local polarization behavior. Full article

In this paper, we design an ultra-thin broadband transparent absorber based on indium tin oxide (ITO) film, and we choose polymethyl methacrylate (PMMA) high-transmittance dielectric sheet instead of the traditional dielectric sheet and polyethylene glycol terephthalate (PET) as the ITO film substrate. Simulation results indicate that the absorber achieves more than 90% absorption for positively incident electromagnetic waves in the broadband range of 5–21.15 GHz with a fractional bandwidth (FBW) of 123.5% and a thickness of 6.3 mm (0.105 λ_L, where λ_L is the wavelength at the lowest frequency). Meanwhile, this paper introduces the interference theory to explain the broadband absorption mechanism of the absorber, which makes up for the defect that the equivalent circuit model (ECM) method cannot analyze the oblique incidence electromagnetic wave. This paper also compares the HFSS simulation results, ECM theoretical values, and interference theoretical values under positively incident electromagnetic waves to clarify the advantages of interference theory in the design of wave absorbers. Full article

In recent years, dielectric films with a high energy-storage capacity have attracted significant attention due to their wide applications in the fields of renewable energy, electronic devices, and power systems. Their fundamental principle relies on the polarization and depolarization processes of dielectric materials under external electric fields to store and release electrical energy, featuring a high power density and high charge–discharge efficiency. In this study, sodium bismuth titanate (NBT) micro-flakes synthesized via a molten salt method were treated with hydrogen peroxide and subsequently blended with a polyvinylidene fluoride (PVDF) matrix. An oriented tape-casting process was utilized to fabricate a dielectric thin film with enhanced energy storage capacity under a weakened electric field. Experimental results demonstrated that the introduction of modified NBT micro-flakes facilitated the interfacial interactions between the ceramic fillers and polymer matrix. Additionally, chemical interactions between surface hydroxyl groups and fluorine atoms within PVDF promoted the phase transition from the α to the β phase. Consequently, the energy storage density of PVDF-NBT composite increased from 2.8 J cm⁻³ to 6.1 J cm⁻³, representing a 110% enhancement. This design strategy provides novel insights for material innovation and interfacial engineering, showcasing promising potential for next-generation power systems. Full article

Dynamic random-access memory (DRAM) is a vital component in modern computing systems. Enhancing memory performance requires maximizing capacitor capacitance within DRAM cells, which is achieved using high-k dielectric materials deposited as thin, uniform films via atomic layer deposition (ALD). Precise film deposition that minimizes electronic defects caused by charged vacancies is essential for reducing leakage current and ensuring high dielectric strength. In this study, we fabricated metal–insulator–metal (MIM) capacitors in high-aspect-ratio trench structures using remote plasma ALD (RP-ALD) and direct plasma ALD (DP-ALD). The trenches, etched into silicon, featured a 7:1 aspect ratio, 76 nm pitch, and 38 nm critical dimension. We evaluated the electrical characteristics of HfO₂-based capacitors with TiN top and bottom electrodes, focusing on leakage current density and equivalent oxide thickness. Capacitance–voltage analysis and X-ray photoelectron spectroscopy (XPS) revealed that RP-ALD effectively suppressed plasma-induced damage, reducing defect density and leakage current. While DP-ALD offered excellent film properties, it suffered from degraded lateral uniformity due to direct plasma exposure. Given its superior lateral uniformity, lower leakage, and defect suppression, RP-ALD shows strong potential for improving DRAM capacitor performance and serves as a promising alternative to the currently adopted thermal ALD process. Full article

Various types of strain, as well as chemical pressure induced by dopants, can effectively tailor the performance of perovskite thin films, including their optical, electrical or photoelectrochemical properties. The control of these functional properties through such engineering techniques is key to fulfilling the application-specific requirements of ferroelectric devices in various fields. Numerous models and experimental data have been published on this subject, especially on ferrite-based ferroelectric materials. Within this paper, the mechanisms of tuning ferroelectric intrinsic properties, such as polarization and ferroelectric domain configurations, through epitaxial strain and doping, as well as the role of these techniques in influencing functional properties such as dielectric and photoelectrochemical ones, are presented. This review examines the significant improvements in dielectric properties and photoelectrochemical efficiency achieved by the strategical control of key functionalities including dielectric losses, domain structures, charge separation and surface reactions in strained/doped ferroelectric thin films, highlighting the advancements and research progress made in this field in recent years. Full article

The advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density. Amorphous indium gallium zinc oxide (a-IGZO) TFTs are promising candidates to meet these requirements. However, conventional silicon dioxide gate insulators provide limited channel modulation due to their low dielectric constant, while alternative high-k dielectrics often suffer from high leakage currents and poor surface quality. Plasma-enhanced atomic layer deposition (PEALD) enables the atomic-level control of film thickness, resulting in high-quality films with superior conformality and uniformity. In this work, a systematic investigation was conducted on the properties of HfO₂ films and the electrical characteristics of a-IGZO TFTs with different HfO₂ thicknesses. A Vth of −0.9 V, μ_sat of 6.76 cm²/Vs, SS of 0.084 V/decade, and I_on/I_off of 1.35 × 10⁹ are obtained for IGZO TFTs with 40 nm HfO₂. It is believed that the IGZO TFTs based on a HfO₂ gate insulating layer and prepared by PEALD can improve electrical performance. Full article

Optimizing charge transport in organic semiconductors is crucial for advancing next-generation optoelectronic devices. The performance of organic field-effect transistors (OFETs) is significantly influenced by the alignment of films in the channel direction and the quality of the dielectric surface, which should be uniform, smooth, and free of charge-trapping defects. Our study reports the enhancement of OFET performance using large-area, uniform, and oriented thin films of regioregular poly[3-hexylthiophene] (RR-P3HT), prepared via the Floating Film Transfer Method (FTM) on octadecyltrichlorosilane (OTS) passivated SiO₂ surfaces. SiO₂ surfaces inherently possess dangling bonds that act as charge traps, but these can be effectively passivated through optimized surface treatments. OTS treatment has improved the optical anisotropy of thin films and the surface wettability of SiO₂. Notably, using octadecene as a solvent during OTS passivation, as opposed to toluene, resulted in a significant enhancement of charge carrier transport. Specifically, passivation with OTS-F (10 mM OTS in octadecene at 100 °C for 48 h) led to a >150 times increase in mobility and a reduction in threshold voltage compared to OTS-A (5 mM OTS in toluene for 12 h at room temperature). Under optimal conditions, these FTM-processed RR-P3HT films achieved the best device performance, with a saturated mobility (μ_sat) of 0.18 cm²V⁻¹s⁻¹. Full article

Composites of ferromagnetic and ferroelectric phases are of interest for studies on mechanical strain-mediated coupling between the two phases and for a variety of applications in sensors, energy harvesting, and high-frequency devices. Nanocomposites are of particular importance since their surface area-to-volume ratio, a key factor that determines the strength of magneto-electric (ME) coupling, is much higher than for bulk or thin-film composites. Core–shell nano- and microcomposites of the ferroic phases are the preferred structures, since they are free of any clamping due to substrates that are present in nanobilayers or nanopillars on a substrate. This review concerns recent efforts on ME coupling in coaxial fibers of spinel or hexagonal ferrites for the magnetic phase and PZT or barium titanate for the ferroelectric phase. Several recent studies on the synthesis and ME measurements of fibers with nickel ferrite, nickel zinc ferrite, or cobalt ferrite for the spinel ferrite and M-, Y-, and W-types for the hexagonal ferrites were considered. Fibers synthesized by electrospinning were found to be free of impurity phases and had uniform core and shell structures. Piezo force microscopy (PFM) and scanning microwave microscopy (SMM) measurements of strengths of direct and converse ME effects on individual fibers showed evidence for strong coupling. Results of low-frequency ME voltage coefficient and magneto-dielectric effects on 2D and 3D films of the fibers assembled in a magnetic field, however, were indicative of ME couplings that were weaker than in bulk or thick-film composites. A strong ME interaction was only evident from data on magnetic field-induced variations in the remnant ferroelectric polarization in the discs of the fibers. Follow-up efforts aimed at further enhancement in the strengths of ME coupling in core–shell composites are also discussed in this review. Full article

Ferroelectric thin films with a high dielectric tunability (η) have great potential in electrically tunable applications, including microwave tunable devices such as phase shifters, filters, delay lines, etc. Using a modified Landau–Devonshire type thermodynamic potential, we show that the dielectric tunability η of a (001) tetragonal ferroelectric film can be analytically solved. After a survey of materials, a large η value above 60% was predicted to be achievable in a (001)-oriented tetragonal Pb(Zr_0.52Ti_0.48)O₃ (PZT) film. Experimentally, (001)-oriented PZT thin films were prepared on LaNiO₃-coated (100) SrTiO₃ substrates by using pulsed laser deposition (PLD). These films exhibited good dielectric tunability (η ~ 67.6%) measured at a small electric field E of ~250 kV/cm (corresponding to 5 volts for a 200 nm thick film). It only dropped down to ~54.2% when E was further reduced to 125 kV/cm (2.5 volts for 200 nm film). The measured dielectric tunability η as functions of the applied electric field E and measuring frequency f are discussed for a 500 nm thick PZT film, with the former well described by the theoretical η(E) curves and the latter showing a weak frequency dependence. These observations validate our integrated approach rooted in a theoretical understanding. Full article