Search Results (120)

We investigate optical bistability (OB) in a hybrid system comprising a semiconductor quantum dot (SQD), a metallic nanoshell (MNS), and a cell membrane within the framework of the multipole approximation. Bistability phase diagrams plotted in the system’s parameter subspaces demonstrate that, in the weak exciton–phonon coupling regime, dynamic switching of bistable states among no-channel, single-channel, and dual-channel configurations can be achieved via precise modulation of the MNS’s dielectric shell thickness. Especially, a critical sensing threshold is identified: the absorption peak disappears and a bistable effect emerges when only 1.82% of normal cells undergo malignant transformation. Furthermore, the bistable region exhibits a gradual broadening trend with an increasing proportion of cancerous cells, yielding a quantitative and ultra-sensitive readout that underpins a highly accurate strategy for early cancer diagnosis. These findings not only deepen our fundamental understanding of bistability regulation in hybrid quantum-plasmonic systems interfaced with biological materials but also offer valuable insights for the development of next-generation optical switches and biomedical sensing platforms. Full article

Laser pulses are essential in various scientific fields, yet existing laser diode drivers offer limited adjustability. This paper presents a digitally adjustable subnanosecond gain-switched laser diode driver, a first one with step sizes of the control being in the single-digit picosecond range. The proposed circuit differentially drives the laser diode (LD) using two high-current gate drivers whose relative delay is digitally adjusted by a dual programmable delay line. Pulse width is defined by the delay difference between the two channels, enabling fine control without the need for high-speed semiconductor switching. Experimental results demonstrate stable optical pulse generation with widths tunable from $350ps$ to $2.8ns$ in $9ps$ increments and repetition rates exceeding $150MHz$. Timing jitter remains below $15ps$, and amplitude variation is below 1% across the tested operating conditions. The proposed solution provides a compact, low-cost, and highly adjustable platform for applications that require precise timing and pulse-width control, such as time-resolved measurements, range finding, and nonlinear optical excitation. Full article

The steady-state quantum dynamics of a compound sample consisting of a semiconductor double-quantum-dot (DQD) system, non-linearly coupled with a leaking superconducting transmission line resonator, is theoretically investigated. Particularly, the transition frequency of the DQD is taken to be equal to the doubled resonator frequency, whereas the inter-dot Coulomb interaction is considered weak. As a consequence, the steady-state quantum dynamics of this complex non-linear system exhibit sudden changes in its features, occurring at a critical DQD-cavity coupling strength, suggesting perspectives for designing on-chip microwave quantum switches. Furthermore, we show that, above the threshold, the electrical current through the double-quantum dot follows the mean photon number into the microwave mode inside the resonator. This might not be the case any more below that critical coupling strength. Lastly, the photon quantum correlations vary from super-Poissonian to Poissonian photon statistics, i.e., towards single-qubit lasing phenomena at microwave frequencies. Full article

This paper presents an enhanced operation strategy for a recently proposed converter called Modified Non-Inverting Step-Down/Up (MNI-SDU) DC-DC converter intended for battery voltage regulation. Unlike the conventional approach, where both switching stages share a single duty cycle, the proposed method controls asynchronously the two duty cycles through a fixed time offset to optimize performance. A methodology is developed to define suitable duty cycle ranges that ensure proper converter operation according to input/output voltage specifications, while simultaneously reducing the current and voltage ripples and electrical stress in the capacitor and semiconductors. Furthermore, a model-based control strategy is proposed, taking into account the enhanced operational characteristics. Consequently, a PI-PI current-mode controller is designed using loop shaping techniques to maintain the output voltage regulated at the desired level. The proposed approach is analyzed mathematically and validated through experimental results. The findings demonstrate that optimizing through asynchronous duty-cycle control with a fixed time offset improves ripple, stress values, and overall efficiency, while maintaining robust output voltage regulation, making this method well-suited for applications requiring compact and reliable power conversion. Full article

It is well known that power converters have the highest failure rate in the energy conversion chain in different industrial applications. This could definitely affect the reliability of the system. The reliability of converters in power conversion systems is crucial, as failures can lead to critical consequences and damage other system components. Therefore, it is important to predict and detect failures and take corrective actions to prevent them. One of the most common types of failure in power converters is semiconductor failure, which can manifest as an open circuit or a short circuit. This paper focuses on single and double open-circuit switch failures in a 5-level cascaded H-bridge inverter, for which a fast, precise method is required. A data-driven approach is employed here, using the output voltage and voltages across each H-bridge as diagnostic signals. A 1D-CNN LSTM neural network is trained to accurately detect and localize open-circuit faults, providing a reliable, practical solution. Full article

The parallel operation of converters is increasingly being adopted to meet higher power demands and improve reliability. However, open-circuit faults in semiconductor switches must be located quickly to prevent unnecessary derating and costly offshore interventions. In parallel topologies, zero-sequence circulating current (ZSCC) distorts phase current residuals at fault inception, making conventional residual-based fault diagnosis methods unreliable. This paper proposes a fast fault diagnosis method that integrates phase current residual analysis with real-time ZSCC polarity. The method monitors which residuals exceed a fixed threshold and compares the polarity of the dominant residual with that of the ZSCC. In this way, it can distinguish and locate single-switch, same-converter dual-switch, and cross-converter dual-switch faults. A three-stage timing window mechanism captures residual and ZSCC signatures within only a few sampling periods, enabling precise fault location without additional sensors. Experimental and simulation results verify the accuracy and robustness of the proposed method, demonstrating its potential for practical deployment in offshore wind turbines. Full article

Discrete Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) are characterized by their lower parasitic parameters and single-chip design, enabling them to achieve even faster switching speeds. However, the rapid rate of change in voltage (dv/dt) and current (di/dt) can lead to overshoot and oscillation in both voltage and current, ultimately limiting the performance of high-frequency operations. To address this issue, this paper presents a high-switching-frequency motor controller that utilizes discrete SiC MOSFETs. To achieve a high switching frequency for the controller while minimizing current oscillation and voltage overshoot, a novel electronic system architecture is proposed. Additionally, a passive driving circuit is designed to suppress gate oscillation without the need for additional control circuits. A new printed circuit board (PCB) laminate stack featuring low parasitic inductance, high current conduction capacity, and efficient heat dissipation is also developed using advanced wiring technology and a specialized heat dissipation structure. Compared to traditional methods, the proposed circuit and bus design features a simpler structure, a higher power density, and achieves a 13% reduction in current overshoot, along with a 15.7% decrease in switching loss. The silicon carbide (SiC) controller developed from this research has successfully undergone double-pulse and power testing. The results indicate that the designed controller can operate reliably over extended periods at a switching frequency of 50 kHz, achieving a maximum efficiency of 98.2% and a power density of 9 kW/kg (10 kW/L). The switching frequency and quality density achieved by the controller have not been observed in previous studies. This controller is suitable for use in the development of new energy electrical systems. Full article

Integrating two-dimensional transition-metal dichalcogenides with graphene is attractive for low-power memory and neuromorphic hardware, yet sequential wet transfer leaves polymer residues and high contact resistance. We demonstrate a complementary metal–oxide–semiconductor (CMOS)-compatible, transfer-free route in which an atomically thin amorphous MoS₂ precursor is RF-sputtered directly onto chemical vapor-deposited few-layer graphene and crystallized by confined-space sulfurization at 800 °C. Grazing-incidence X-ray reflectivity, Raman spectroscopy, and X-ray photoelectron spectroscopy confirm the formation of residue-free, three-to-four-layer 2H-MoS₂ (roughness: 0.8–0.9 nm) over 1.5 cm × 2 cm coupons. Lateral MoS₂/graphene devices exhibit reproducible non-volatile resistive switching with a set transition (SET) near +6 V and an analogue ON/OFF ≈2.1, attributable to vacancy-induced Schottky-barrier modulation. The single-furnace magnetron sputtering + sulfurization sequence avoids toxic H₂S, polymer transfer steps, and high-resistance contacts, offering a cost-effective pathway toward wafer-scale 2D memristors compatible with back-end CMOS temperatures. Full article

Terahertz reconfigurable reflectarray antennas (RRAs) hold significant promise for next-generation wireless communication systems by enabling dynamic beam control to mitigate severe path loss at high frequencies. This work presents a Complementary Metal-Oxide-Semiconductor (CMOS)-based RRA for terahertz amplitude control using tunable split-ring resonators. First, a terahertz switch in standard 65 nm CMOS process is designed, tested, and calibrated on the chip to extract the equivalent impedance, enabling precise RRA element design. Next, a reconfigurable element architecture is presented through the co-design of a split-ring radiator, control line, and a single switch. Experimental characterization demonstrates that the fabricated RRA achieves 3 dB amplitude variation at 0.290 THz with <8.5 dB element loss under 0.8 V gate bias. The measured results validate that the proposed single-switch topology effectively balances reconfigurability and loss performance in the terahertz regime. The demonstrated CMOS-compatible RRA provides a scalable solution for real-time beamforming in terahertz communication systems. Full article

T-type three-level inverters have been extensively utilized in renewable energy generation, motor drive systems, and other power conversion applications. However, failures in semiconductor devices critically reduce the operational reliability of power conversion systems. While significant progress has been made in the diagnosis of single-switch open-circuit (OC) faults, the precise location and detection of simultaneous double-switch OC faults remain challenging. Therefore, this paper proposes a fault diagnosis method, integrating an improved adaptive sliding mode observer (IASMO) and dynamic current threshold detection. First, the IASMO is constructed through the hybrid logic dynamic model, achieving accurate and rapid estimation of phase currents. Then, integrating estimated with actual currents accomplishes the design of detection variables and adaptive thresholds. Subsequently, fault location variables are formulated to achieve accurate localization of both single-switch and double-switch faults. Finally, Simulation and experimental results demonstrate that the proposed method effectively identifies 18 types of OC faults within 75% of the current cycle, with high efficiency and robustness. Full article

Forming required AC voltage levels is currently one of the most pressing problems. Unstable voltage levels can lead to the failure of household and industrial equipment. This can lead to a pure effect on the production cycle. In this regard, the development of AC voltage regulators has become relevant. Such regulators can perform the function of voltage level asymmetry compensators in a three-phase power supply network. In turn, new topologies should be energy-efficient and reliable. This can be achieved by reducing the number of semiconductor elements, thus reducing losses and increasing efficiency. Also, AC voltage regulators have found applications as soft-start devices for motors and have become relevant to frequency converters. The power level of such devices can vary from units to tens of kilowatts. This paper presents several circuit design solutions for AC voltage regulators with fewer switches. These solutions are made according to both a single-level and two-level system, where the level refers to the number of links that increase the transmission coefficient. The schemes were analyzed, and efficiency was evaluated through their harmonic coefficients, power factor, and efficiency coefficient. For the basic scheme, a photo of the experimental layout and its results are provided. Full article

In medium- and high-power-density applications, silicon carbide (SiC) metal-oxide semiconductor field effect transistors (MOSFETs) are often connected in parallel increasing the current capability. However, the current sharing of paralleled SiC MOSFETs is affected by the mismatched technical parameters of devices and the deviated power circuit parasitic inductances, even if power devices are controlled by a single gate driver. This leads to unevenly distributed power losses causing different stress between SiC MOSFETs. As a result, unbalanced current sharing increases the probability of severe power switch(es) and system failures. For over a decade, the current imbalance issue between parallel-connected SiC MOSFETs has concerned the scientific community, and many methods and techniques have been proposed. However, most of these solutions are impossible to realize without the necessity of screening power devices to measure their technical parameters. Consequently, system costs significantly increase due to the expensive equipment for screening SiC MOSFETs. Also, transient current imbalance is the main concern of most papers, without addressing static imbalance. In this paper, an innovative approach is proposed, capable of suppressing both static and transient current imbalance between paralleled SiC MOSFETs, under both symmetrical and asymmetrical layouts, through an improved active gate driver and without the requirement for any power device screening process. Additionally, the proposed solution employs a self-sustaining algorithmic approach utilizing current sensors and a field-programmable gate array (FPGA). The functionality of the proposed solution is verified through experimental tests, achieving current imbalance suppression between two paralleled SiC MOSFETs, actively and autonomously. Full article

In this paper, we review our work on the manipulation of magnetization in ferromagnetic semiconductors (FMSs) using electric-current-induced spin-orbit torque (SOT). Our review focuses on FMS layers from the (Ga,Mn)As zinc-blende family grown by molecular beam epitaxy. We describe the processes used to obtain spin polarization of the current that is required to achieve SOT, and we briefly discuss methods of specimen preparation and of measuring the state of magnetization. Using specific examples, we then discuss experiments for switching the magnetization in FMS layers with either out-of-plane or in-plane easy axes. We compare the efficiency of SOT manipulation in single-layer FMS structures to that observed in heavy-metal/ferromagnet bilayers that are commonly used in magnetization switching by SOT. We then provide examples of prototype devices made possible by manipulation of magnetization by SOT in FMSs, such as read-write devices. Finally, based on our experimental results, we discuss future directions which need to be explored to achieve practical magnetic memories and related applications based on SOT switching. Full article

This work explores the principle of utilizing gallium nitride devices as a gate driver for silicon carbide power devices. As silicon has long reached its performance limits, Wide Bandgap semiconductors such as gallium nitride and silicon carbide have emerged as promising alternatives due to their superior characteristics. However, few publications suggest using a gallium nitride-based gate driver for silicon carbide, high-voltage power devices. Unlike standard voltage source gate drivers, this paper proposes a novel bi-polar current source resonant gate driver topology using gallium nitride transistors as a gate drive circuit for silicon carbide power switching. The driver receives a single input supply and pulsed width modulation signal, producing a high current bi-polar gate driving signal. The gate driver is validated by employing the proposed gate driver to a high-power silicon carbide transistor in a resonant boost converter. The experimental results show that the new gate driver recovers the gate charge wasted energy and provides high performances in varying high voltage loads at a 2.5 MHz switching frequency while reducing the gate losses by 26%. Full article

Automotive-grade GaN power switches have recently been made available in the market from a growing number of semiconductor suppliers. The exploitation of this technology enables the development of very efficient power converters operating at much higher switching frequencies with respect to components implemented with silicon power devices. Thus, a new generation of automotive power components with an increased power density is expected to replace silicon-based products in the development of higher-performance electric and hybrid vehicles. 650 V GaN-on-silicon power switches are particularly suitable for the development of 3–7 kW on-board battery chargers (OBCs) for electric cars and motorcycles with a 400 V nominal voltage battery pack. This paper describes the design and implementation of a 6.6 kW OBC for electric vehicles using automotive-grade, 650 V, 25 mΩ, discrete GaN switches. The OBC allows bi-directional power flow, since it is composed of a bridgeless, interleaved, totem-pole PFC AC/DC active front end, followed by a dual active bridge (DAB) DC-DC converter. The OBC can operate from a single-phase 90–264 Vrms AC grid to a 200–450 V high-voltage (HV) battery and also integrates an auxiliary 1 kW DC-DC converter to connect the HV battery to the 12 V battery of the vehicle. The auxiliary DC-DC converter is a center-tapped phase-shifted full-bridge (PSFB) converter with synchronous rectification. At the low-voltage side of the auxiliary converter, 100 V GaN power switches are used. The entire OBC is liquid-cooled. The first prototype of the OBC exhibited a 96% efficiency and 2.2 kW/L power density (including the cooling system) at a 60 °C ambient temperature. Full article