Search Results (94)

The FY-4B satellite, launched in June 2021 as China’s new-generation geostationary meteorological satellite, carries three identical High-Energy Particle Detectors (HEPDs) that enable multi-directional, wide-spectral measurements of energetic electrons. The three units are mounted in the zenith (−Z), flight (+X with a +Y offset of 30°), and anti-flight (−X with a −Y offset of 30°) directions, allowing simultaneous observations from nine look directions over a field of view close to 180° in the 0.4–4 MeV energy range (eight energy channels). This paper systematically presents the design principles of the HEPD electron detector, the ground calibration scheme, and preliminary in-orbit validation results. The probe employs a multi-layer silicon semiconductor telescope technique to achieve high-precision measurements of electron energy spectra, fluxes, and directional anisotropy in the 0.4–4 MeV range. Ground synchrotron calibration shows that the energy resolution is better than 16% for energies above 1 MeV, and the angular resolution is about 20°, providing a solid basis for subsequent quantitative inversion. During in-orbit operation, HEPD remains stable under both quiet conditions and strong geomagnetic storms: the measured electron fluxes, differential energy spectra, and directional distributions show good agreement with GOES-16 observations in the same energy bands during quiet periods and for the first time provide from geostationary orbit pitch-angle-resolved images of the minute-scale evolution of electron enhancement events. These results demonstrate that HEPD is capable of long-term monitoring of the geostationary radiation environment and can supply high-quality, continuous, and reliable data to support studies of radiation-belt particle dynamics, data assimilation in space weather models, and radiation warnings for satellites in orbit. Full article

To achieve a substantial enhancement in thermodynamic efficiency, Generation IV nuclear reactors are designed to operate at significantly elevated temperatures compared to conventional reactors. Moreover, they typically employ a fast neutron spectrum, characterized by higher neutron energy and flux. This combination results in a considerably more intense radiation environment within the core relative to traditional thermal neutron reactors. Therefore, the measurement of neutron flux in the core of Generation IV nuclear reactors faces the challenge of a high-temperature and high-radiation environment. Conventional neutron flux monitoring equipment—including fission chambers, gas ionization chambers, scintillator detectors, and silicon or germanium semiconductor detectors—faces considerable challenges in Generation IV reactor conditions. Under high temperatures and intense radiation, these sensors often experience severe performance degradation, significant signal distortion, or complete obliteration of the output signal by noise. This inherent limitation renders them unsuitable for the aforementioned applications. Consequently, significant global research efforts are focused on developing neutron detectors capable of withstanding high-temperature and high-irradiation environments. The objective is to enable accurate neutron flux measurements both inside and outside the reactor core, which are essential for obtaining key operational parameters. In summary, the four different types of neutron detectors have different performance characteristics and are suitable for different operating environments. This review focuses on 4H-SiC, diamond detectors, high-temperature fission chambers, and self-powered neutron detectors. It surveys recent research progress in high-temperature neutron flux monitoring, analyzing key technological aspects such as their high-temperature and radiation resistance, compact size, and high sensitivity. The article also examines their application areas, current development status, and offers perspectives on future research directions. Full article

This study investigates the use of Si and CdTe-based Timepix3 detectors for photovoltaic energy conversion using solar X-rays and other high-energy electromagnetic radiation in space. As space missions increasingly rely on miniaturized platforms like CubeSats, power generation in compact and radiation-prone environments remains a critical challenge. Conventional solar panels are limited by size and spectral sensitivity, prompting the need for alternative energy harvesting solutions—particularly in the high-energy X-ray domain. A novel CubeSat-compatible payload design incorporates a UV-visible filter to isolate incoming X-rays, which are then absorbed by semiconductor detectors to generate electric current through ionization. Laboratory calibration was performed using Fe-55, Ba-133, and Am-241 sources to compare spectral response and clustering behaviour. CdTe consistently outperformed Si in detection efficiency, spectral resolution, and cluster density due to its higher atomic number and material density. Equalization techniques further improved pixel threshold uniformity, enhancing spectroscopic reliability. In addition to experimental validation, simulations were conducted to quantify the expected energy conversion performance under orbital conditions. Under quiet-Sun conditions at 500 km LEO, CdTe absorbed up to 1.59 µW/cm² compared to 0.69 µW/cm² for Si, with spectral power density peaking between 10 and 20 keV. The photon absorption efficiency curves confirmed CdTe’s superior stopping power across the 1–100 keV range. Under solar flare conditions, absorbed power increased dramatically, up to 159 µW/cm² for X-class and 15.9 µW/cm² for C-class flares with CdTe sensors. A time-based energy model showed that a 10 min X-class flare could yield nearly 1 mJ/cm² of harvested energy. These results validate the concept of a compact photovoltaic payload capable of converting high-energy solar radiation into electrical power, with dual-use potential for both energy harvesting and radiation monitoring aboard small satellite platforms. Full article

Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide bandgap makes it an interesting candidate for radiation-hard particle detectors in high-energy physics and medical applications. Furthermore, the high electron and hole drift velocities in 4H-SiC enable devices suitable for ultra-fast particle detection and timing applications. However, currently, the front-end readout electronics used for 4H-SiC detectors constitute a bottleneck in investigations of the charge carrier drift. To address these limitations, a high-frequency readout board with an intrinsic bandwidth of 10 GHz was developed. With this readout, the transient current signals of a 4H-SiC diode with a diameter of 141 μm and a thickness of 50 μm upon UV laser, alpha particle, and high-energy proton beam excitation were recorded. In all three cases, the electron and hole drift can clearly be separated, which enables the extraction of the charge carrier drift velocities as a function of the electric field. These velocities, directly measured for the first time, provide a valuable comparison to Monte Carlo-simulated literature values and constitute an essential input for TCAD simulations. Finally, a complete simulation environment combining TCAD, the Allpix² framework, and SPICE simulations is presented, which is in good agreement with the measured data. Full article

Conventional detectors based on ionization chambers, semiconductors, or thermoluminescent materials generally cannot be used to verify the in vivo dose delivered during brachytherapy treatments with γ-ray sources. However, certain adaptations and alternative methods, such as the use of miniaturized detectors or other specialized techniques, have been explored to address this limitation. One approach to solving this problem involves the use of dosimetric materials based on efficient scintillation crystals, which can be placed in the patient’s body using a long optical fiber inserted intra-cavernously, either in front of or next to the tumor. Scintillation crystals with a density close to that of tissue can be used in any location, including the respiratory tract, as they do not interfere with dose distribution. However, in many cases of radiation therapy, the detector may need to be positioned behind the target. In such cases, the use of heavy, high-density, and high-Z_eff scintillators is strongly preferred. The delivered radiation dose was registered using the radioluminescence response of the crystal scintillator and recorded with a compact luminescence spectrometer connected to the scintillator via a long optical fiber (so-called fiber-optic dosimeter). This proposed measurement method is completely non-invasive, safe, and can be performed in real time. To complete the abovementioned task, scintillation detectors based on YAG:Ce (ρ = 4.5 g/cm³; Z_eff = 35), LuAG:Ce (ρ = 6.75 g/cm³; Z_eff = 63), and GAGG:Ce (ρ = 6.63 g/cm³; Z_eff = 54.4) garnet crystals, with different densities ρ and effective atomic numbers Z_eff, were used in this work. The results obtained are very promising. We observed a strong linear correlation between the dose and the scintillation signal recorded by the detector system based on these garnet crystals. The measurements were performed on a specially prepared phantom in the brachytherapy treatment room at the Oncology Center in Bydgoszcz, where in situ measurements of the applied dose in the 0.5–8 Gy range were performed, generated by the ¹⁹²Ir (394 keV) γ-ray source from the standard Fexitron Elektra treatment system. Finally, we found that GAGG:Ce crystal detectors demonstrated the best figure-of-merit performance among all the garnet scintillators studied. Full article

Using the Bridgman technique, GaSe single crystals were obtained which were mechanically split into plane-parallel plates with a wide range of thicknesses. By heat treatment in air at 820 °C and 900 °C, for 30 min and 6 h, micro- and nanocomposite layers of Ga₂Se₃–Ga₂O₃ and β–Ga₂O₃ (native oxide) with surfaces made of nanowires/nanoribbons were obtained. The obtained composite Ga₂Se₃–Ga₂O₃ and nanostructured β–Ga₂O₃ are semiconductor materials with band gaps of 2.21 eV and 4.60 eV (gallium oxide) and photosensitivity bands in the green–red and ultraviolet-C regions that peaked at 590 nm and 262 nm. For an applied voltage of 50 V, the dark current in the photodetector based on the nanostructured β–Ga₂O₃ layer was of 8.0 × 10⁻¹³ A and increased to 9.5 × 10⁻⁸ A upon 200 s excitation with 254 nm-wavelength radiation with a power density of 15 mW/cm². The increase and decrease in the photocurrent are described by an exponential function with time constants of τ_1r = 0.92 s, τ_2r = 14.0 s, τ_1d = 2.18 s, τ_2d = 24 s, τ_1r = 0.88 s, τ_2r = 12.2 s, τ_1d = 1.69 s, and τ_2d = 16.3 s, respectively, for the photodetector based on the Ga₂Se₃–Ga₂S₃–GaSe composite. Photoresistors based on the obtained Ga₂Se₃–Ga₂O₃ composite and nanostructured β–Ga₂O₃ layers show photosensitivity bands in the spectral range of electronic absorption bands of ozone in the same green–red and ultraviolet-C regions, and can serve as ozone sensors (detectors). Full article

Diamond is a semiconductor with a large band gap (5.48 eV), high carrier mobility (the highest for holes), high electrical resistance and low capacitance. Thanks to its outstanding properties, diamond-based detectors offer several advantages, among others: high signal-to-noise ratio, fast response, intrinsic pulse-shape discrimination capabilities for distinguishing different types of radiation, as well as operation in pulse and current modes. The mentioned properties meet most of the demanding requests that a radiation detection material must fulfil. Diamond detectors are suited for detecting almost all types of ionizing radiation including X-ray and UV photons, resulting also in blindness to visible photons and are used in a wide range of applications including ones requiring the capability to withstand harsh environments. After reviewing the fundamental physical properties of synthetic single crystal diamond (SCD) grown by microwave plasma enhanced chemical vapor deposition (MWPECVD) technique and the basic principles of diamond-photon interactions and detection, the paper focuses on SCD detectors developed for X-ray and UV detection, discussing their configurations, construction techniques, advantages, and drawbacks. Applications ranging from X-ray detection around accelerators to UV detection for fusion plasmas are addressed, and future trends are highlighted too. Full article

Radiation effects on electronic devices represent a major concern in applications for harsh environments, such as aerospace and nuclear facilities. This article presents a review of fundamental aspects of radiation effects on semiconductors, with a primary focus on Single-Event Effects. It discusses charge collection models, destructive effects, applications in detectors, and impacts on digital devices, drawing from recent research findings. Full article

X-ray response performances of a p-NiO/β-Ga₂O₃ hetero-junction diode (HJD) X-ray detector were studied before and after γ-ray irradiation at −200 V, with a total dose of 13.5 kGy(Si). The response performances of the HJD X-ray detector were influenced by the trap-assistant conductive process of the HJD under reverse bias, which exhibited an increasing net (response) current, nonlinearity, and a long response time. After irradiation, the Poole–Frenkel emission (PFE) dominated the leakage current of HJDs due to the higher electric field caused by the increased net carrier concentration of β-Ga₂O₃. This conductive process weakened the performance of the HJD X-ray detector in terms of sensitivity, output linearity, and response speed. This study provided valuable insights into the radiation damage and performance degradation mechanisms of Ga₂O₃-based radiation detectors and offered guidance on improving the reliability and stability of these radiation detectors. Full article

This review explores the applications of room temperature semiconductor detectors, with a focus on Cd(Zn)Te based detection systems, in non-destructive testing and evaluation (NDT&E). Cd(Zn)Te detectors, which operate efficiently at ambient temperatures, eliminate the need for cryogenic cooling systems and offer high energy and spatial resolution, making them ideal for a wide range of NDT&E applications. Key performance parameters such as energy resolution, spatial resolution, time resolution, detector efficiency, and form factor are discussed. The paper highlights the utilization of Cd(Zn)Te detectors in various imaging and spectroscopic applications, including nuclear threat detection and non-proliferation, archaeological NDT, and Unmanned Aerial Vehicle radiological surveying. Cd(Zn)Te detectors hold significant promise in NDT&E due to their high-resolution imaging, superior spectroscopic capabilities, versatility, and portability. Full article

Semiconductor radiation detectors usually use a specific signal conditioning circuit, ensuring the required detection system parameters. This paper details the noise properties of specific input stages in photoreceivers that detect various types of radiation. For this purpose, the popular silicon PIN photodiode (BPW34) and two different types of low-noise operational amplifiers (AD797A and ADA4625-1) were used. In the presented experiments, noise measurements were provided for voltage and transimpedance amplifiers operating in input stages, comparing their noise and bandwidths. This made it possible to obtain results for bipolar junction transistor (BJT)- and field-effect transistor (FET)-based input stages of circuity, cooperating directly with a photodiode. Analyzing the obtained characteristics and considering the photodiode operation mode, it is evident that the transimpedance amplifier and photoconductive mode should be considered a typical first-choice solution. In some cases, the performances, such as bandwidth and noise, may be similar to those of voltage. Nevertheless, the bias method used in TIA and feedback compensation can also affect the resulting output noise spectral characteristics due to the photodiode and other capacitances existing in the circuit. In the case of a high transimpedance, the FET-based op-amps ensure lower output noise than the BJT-based ones due to the significantly lower current noise. The simple radiation detector with two-channel differential TIA was also proposed and tested based on the results obtained. Full article

High-purity germanium (HPGe) detectors occupy a prominent position in fields such as radiation detection and aerospace because of their excellent energy resolution and wide detection range. To achieve a broader detection range, conventional HPGe detectors often need to be expanded to cubic-centimeter-scale volumes. However, this increase in volume leads to a large detector area, which in turn increases the detector capacitance, affecting the detector’s noise level and performance. To address this issue, this study proposes a novel high-purity germanium drift detector (HPGeDD). The design features a small-area central collecting cathode surrounded by concentric anode rings, with a resistive chain interposed between the anode rings to achieve self-dividing voltage. This design ensures that the detector’s capacitance is only related to the area of the central collecting cathode, independent of the overall active area, thus achieving a balance between a small capacitance and large active area. Electrical performance simulations of the novel detector were conducted using the semiconductor simulation software Sentaurus TCAD (P-2019.03). The results show a smooth electric potential distribution within the detector, forming a lateral electric field, as well as a lateral hole drift channel precisely directed toward the collecting cathode. Furthermore, simulations of heavy ion incidence were performed to investigate the detector’s carrier collection characteristics. The simulation results demonstrate that the HPGeDD exhibits advantages such as fast signal response and short collection time. The design proposal presented in this study offers a new solution to the problem of excessive capacitance in conventional HPGe detectors, expands their application scope, and provides theoretical guidance for subsequent improvements, optimizations, and practical manufacturing. Full article

The practical implementation of terahertz (THz) imaging and spectroscopic systems in real operational conditions requires them to be of a compact size, to have enhanced functionality, and to be user-friendly. This work demonstrates the single-sided integration of Fresnel-zone-plate-based optical elements with InGaAs bow-tie diodes directly on a semiconductor chip. Numerical simulations were conducted to optimize the Fresnel zone plate’s focal length and the InP substrate’s thickness to achieve constructive interference at 600 GHz, room-temperature operation and achieve a sensitivity more than an order of magnitude higher—up to 24.5 V/W—than that of a standalone bow-tie detector. Investigations revealed the strong angular dependence of the incident radiation on the Fresnel zone plate-integrated bow-tie diode’s response. These findings pave a promising avenue for the further development of single-sided integration of flat optics with THz detectors, enabling improved sensitivity, simplified manufacturing processes, and reduced costs for THz detection systems in a more compact design scheme. Full article

The concentration of natural radionuclides ²²⁶Ra, ²³²Th and ⁴⁰K in ceramic tiles manufactured in Poland is presented in this paper. The concentration of natural radioactive isotopes in the tested samples was determined using a low-level digital gamma ray spectrometer equipped with an HPGe semiconductor detector. The mean concentrations of ²²⁶Ra, ²³²Th and ⁴⁰K in the analyzed samples were found to be 48 ± 3 Bq∙kg⁻¹, 49 ± 3 Bq∙kg⁻¹ and 476 ± 23 Bq∙kg⁻¹, respectively. The world mean concentrations of these radionuclides (50 Bq·kg⁻¹, 50 Bq·kg⁻¹ and 500 Bq·kg⁻¹, respectively) were not exceeded. Furthermore, in order to ascertain the level of gamma radiation exposure, fundamental radiation protection parameters were established: radioactivity concentration indicator/gamma ray indicator (I_γ), indoor dose rate (D_in) and annual indoor effective dose (E_in). In the case of the investigated ceramic tiles, it was established that the parameters were not higher than the limit values, except the indoor gamma radiation dose rate which was found to be 1.5 times higher than the world average. Therefore, the findings of this study indicate that the utilization of the examined ceramic tiles in constructions should be approached with a degree of caution. Full article

In this paper, a silicon carbide (SiC) phototransistor based on an open-base structure was fabricated and used as a radiation detector. In contrast to the exposed and thin sensitive region of traditional photo detectors, the sensitive region of the radiation detector was much thicker (30 μm), ensuring the high energy deposition of radiation particles. The response properties of the fabricated SiC npn radiation detector were characterized by high-energy X-ray illumination with a maximum X-ray photon energy of 30 keV. The SiC npn detector featured stable and clear response to the X-ray within 0.0766 Gy∙s⁻¹ to 0.766 Gy∙s⁻¹ below 300 V. Due to to the low leakage current of less than 1 nA and the fully depleted sensitive region, the bipolar-transistor-modeled SiC npn detector exhibited a clear common-emitter current gain of 5.85 at 200 V (under 0.383 Gy∙s⁻¹), where the gain increased with bias voltage due to the Early effect and reached 7.55 at 300 V. In addition, the transient response of the SiC npn detector revealed a longer delay time than the SiC diode of the same size, which was associated with the larger effective capacitance of the npn structure. The npn detector with internal gain showed great potential in radiation detection. Full article