Compared with the most commonly used silicon and germanium, which need to work at cryogenic or low temperatures to decrease their noise levels, wide-bandgap compound semiconductors such as silicon carbide allow the operation of radiation detectors at...
Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power eq...
The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification of electromagnetic radiation by employing integrated circuit technology. However, obtaining a high-efficiency rectification device requires...
This review explores the applications of room temperature semiconductor detectors, with a focus on Cd(Zn)Te based detection systems, in non-destructive testing and evaluation (NDT&E). Cd(Zn)Te detectors, which operate efficiently at ambient tempe...
A new scintillation material composed of InAs quantum dots (QDs) hosted within a GaAs matrix was developed, and its performance with different types of radiation is evaluated. A methodology for designing an integrated photodetector (PD) with a low de...
The application of Cd0.9Zn0.1Te (CZT) single crystals, the primary choice for high-resolution, room-temperature compact gamma-ray detectors in the field of medical imaging and homeland security for the past three decades, is limited by the high cost...
Interest in the use of organic electronic devices in radiation sensing applications has grown in recent years. The numerous device configurations (e.g., diodes, thin film transistors) and potential for improved tissue equivalence compared to their si...
Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in terahertz (THz) imaging, as they permit high-sensitivity, high-resolution detection of chemical species and images using integrated circuit technolog...
The technology transfer of terahertz wireless communication from research laboratories to commercial applications is a global strategic achievement currently pursued to match the ever-increasing demand for high-speed communication. The use of commerc...
Metal–oxide–semiconductor field-effect transistors (MOSFETs) have proven to be effective devices for rectifying electromagnetic radiation at extremely high frequencies, approximately 1 THz. This paper presents a new interpretation of the...
In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most c...
The all-inorganic perovskite CsPbBr3 is a strong candidate for room-temperature, semiconducting radiation detecting applications. With a high stopping power, a large bandgap, and a high mobility-lifetime (μτ) product for both holes and electro...
Radiation detectors based on Cadmium Zinc Telluride (CZT) compounds are becoming popular solutions thanks to their high detection efficiency, room temperature operation, and to their reliability in compact detection systems for medical, astrophysical...
Semiconductor detectors for high-energy sensing (
In this paper, a silicon carbide (SiC) phototransistor based on an open-base structure was fabricated and used as a radiation detector. In contrast to the exposed and thin sensitive region of traditional photo detectors, the sensitive region of the r...
X-ray response performances of a p-NiO/β-Ga2O3 hetero-junction diode (HJD) X-ray detector were studied before and after γ-ray irradiation at −200 V, with a total dose of 13.5 kGy(Si). The response performances of the HJD X-ray detect...
In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) s...
Perovskite CsPbBr3 semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties, demonstrating strong potential for γ-radiation and X-ray detection at room temperature. However, the total do...
Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materi...
This paper presents the results of beam investigations on semiconductor IR lasers using novel detectors based on thermocouples. The work covers the design, the fabrication of detectors, and the experimental validation of their sensitivity to IR radia...
Diamond, as a wide band-gap semiconductor material, has the potential to be exploited under a wide range of extreme operating conditions, including those used for radiation detectors. The radiation tolerance of a single-crystal chemical vapor deposit...
The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 1016 1 MeV neq/cm2 in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of the detector propert...
Radiation effects on electronic devices represent a major concern in applications for harsh environments, such as aerospace and nuclear facilities. This article presents a review of fundamental aspects of radiation effects on semiconductors, with a p...
The material family halide perovskites has been critical in recent room-temperature radiation detection semiconductor research. Cesium lead bromide (CsPbBr3) is a halide perovskite that exhibits characteristics of a semiconductor that would be suitab...
Medical imaging instrumentation design and construction is based on radiation sources and radiation detectors/sensors. This review focuses on the detectors and sensors of medical imaging systems. These systems are subdivided into various categories d...
The analysis of
This paper reports a novel, one-dimensional dense array of asymmetrical metal-oxide-semiconductor field-effect-transistor (MOSFET) THz detector, which has been fabricated in GlobalFoundries 55-nm CMOS technology. Compared with other technologies, the...
The detection of infrared radiation is of great interest for a wide range of applications, such as absorption sensing in the infrared spectral range. In this work, we present a CMOS compatible pyroelectric detector which was devised as a mid-infrared...
This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (
While silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon carbide is on...
Recent theoretical and experimental research is triggering interest to technologies based on radiation in the region from ~0.1 to 20 Terahertz (THz). Today, this region of the electromagnetic (e.m.) spectrum is a frontier area for research in many di...
We examine the effect of resonant absorption of electromagnetic signals in a silicon semiconductor plasma layer when the dielectric plate is placed behind it both experimentally and numerically. It is shown that such plate acts as a dielectric resona...
Daytime detection of space targets is challenging due to the strong skylight background and the limited resolution of conventional polarization imaging systems. In this work, we present a semiconductor-based polarization detection method that integra...
Terahertz (THz) filters and detectors can find a wide application in such fields as: sensing, imaging, security systems, medicine, wireless connection, and detection of substances. Thermoelectric materials are promising basis for THz detectors’ devel...
Optical absorption spectra of 9 MeV electron-irradiated GaSe crystals measured at temperatures in the range from 9.5 to 300 K were analyzed. The absorption spectra with features caused by Ga vacancies in two charge states and direct interband transit...
Percentage depth–dose (PDD) distributions are fundamental to characterizing radiation beams in radiotherapy. This review provides an overview of both methods and sensor technologies for measuring PDD in photon, electron, proton, and carbon-ion...
Although many refractory metals have been investigated as the choice of contact metal in 4H-SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for harsh environment applications has not been investigated adequate...
Diamond is a semiconductor with a large band gap (5.48 eV), high carrier mobility (the highest for holes), high electrical resistance and low capacitance. Thanks to its outstanding properties, diamond-based detectors offer several advantages, among o...
To achieve a substantial enhancement in thermodynamic efficiency, Generation IV nuclear reactors are designed to operate at significantly elevated temperatures compared to conventional reactors. Moreover, they typically employ a fast neutron spectrum...
In this paper, we described a method of double-sided diffusion and drift of lithium-ions into monocrystalline silicon for the formation of the large-sized, p-i-n structured Si(Li) radiation detectors. The p-i-n structure is a p-n junction with a dope...
The data on electrical and photoelectric characteristics of Ga2O3/ZnGeP2 hetero-structures formed by RF magnetron sputtering Ga2O3 target with a purity of (99.99%) were obtained. The samples are sensitive to UV radiation with a wavelength of λ...
Numerous instruments such as ionization chambers, hand-held and pocket dosimeters of various types, film badges, thermoluminescent dosimeters (TLDs) and optically stimulated luminescence dosimeters (OSLDs) are used to measure and monitor radiation in...
Halide perovskites are a novel class of semiconductors that have attracted great interest in recent decades due to their peculiar properties of interest for optoelectronics. In fact, their use ranges from the field of sensors and light emitters to io...
Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science...
Unmanned aerial systems (UAS) for airborne gamma-ray surveys in radioecological and geological research are being increasingly used, since they provide radiation safety for personnel and high survey performance. Improvement of detection modules is on...
Radiation-hardened semiconductor GaN has drawn considerable attention owing to its excellent properties such as large displacement energy. Many studies have focused on evaluating the degradation of GaN-based power device performance by proton beam or...
Depleted Complementary Metal-Oxide-Semiconductor (CMOS) sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Their capability of integrating the sensing diode into the CMOS wafer h...
The application of the new structure to the complex field of THz receivers requires the availability of an analytical model, reliable and able to highlight the dependence on the parameters of the physical structure. We present a model of the rectific...
The imaging performance of a semiconductor radiation imaging detector critically depends on its photoconductor layer thickness. The conventional detector structure (i.e., a photoconductor layer is sandwiched between two parallel electrodes) needs a s...
THz detection in a silicon structure can be an effective instrument not only for image detection, and material and gas sensing, but also for communications. Next-generation 6G communications assume the possibility of achieving a large-band transmissi...
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