Search Results (75)

This work is motivated by the need to enhance efficiency and radiation resistance and reduce weight in high-performance photovoltaic devices, with applications spanning both terrestrial and space environments. Metamorphic buffers are key enablers for reducing defect formation in lattice-mismatched structures, which are among the most widespread technologies for high-efficiency photovoltaic energy conversion. Although many systems have been created, absolute certainty about the effective relaxation mechanism remains unattained. In this work, MOVPE-grown step-graded buffers with variable In content were obtained on Ge substrates and investigated to identify the critical thresholds that govern strain relaxation and defect formation. The results show that the buffers are fully strained when the In top-layer content is <6.0%, while a degree of relaxation in the entire structure appears when the In top-layer content is >6.0%. In addition, the relaxation phenomenon is paralleled by the formation of a tilt angle between the layers and the substrate. We also found evidence that the appearance of relaxation is not limited to the upper layer but is presented by the structure as a whole. The effects of Te doping inside the InGaAs layers were also investigated: Te does not influence the structure of the crystal, but it introduces a Burstein–Moss blue shift in the photoluminescence energy of about 20 meV. Eventually, to reduce defect formation with the goal of achieving high-efficiency photovoltaic devices, a thick layer with a lower In content was grown onto the overshoot material (In_0.12Ga_0.88As). The results obtained confirm the high quality of the buffers and unveil the critical points, which are responsible for the most important changes in the buffer architecture and should be considered in future material engineering. The results provide valuable insights for the design of high-performance, sustainable photovoltaic devices and contribute to the advancement of III–V semiconductor integration on Ge substrates. Full article

Indium phosphide (InP) is a promising photoactive material for solar-driven hydrogen production owing to its optimal bandgap, high carrier mobility, and broad solar absorption. However, conventional InP fabrication relies on costly wafers and toxic precursors, limiting its scalability and sustainability. Here, we demonstrate a simple and environmentally friendly route to synthesize n-type InP thin-film photoanodes by phosphidating indium films prepared via doctor blade coating on ITO substrates, using NaH₂PO₂ as a phosphorus source. Structural and spectroscopic analyses (XRD, Raman, XPS, PL) confirmed the successful formation of crystalline InP with optimum quality at 425 °C. Photoelectrochemical measurements revealed a significant photocurrent density of 1.8 mA·cm⁻² under AM 1.5 illumination, with extended photoresponse into the near-infrared region. Mott–Schottky and EIS analyses indicated efficient charge separation, low transfer resistance, and unintentional n-type doping due to Sn diffusion from the ITO substrate. This facile and green synthesis route not only provides a scalable approach to III–V semiconductors but also highlights InP thin films as cost-effective and efficient photoanodes for sustainable solar hydrogen generation. Full article

The degradation of the electronic properties of semiconductor materials and electronic devices under neutron irradiation is a critical issue for the development of electronic systems intended for use in nuclear and thermonuclear energy facilities. This study presents a methodology for real-time measurement of the electrical parameters of semiconductor structures during neutron irradiation in a high-flux reactor environment. A specially designed irradiation fixture with an electrical measurement system was developed and implemented at the WWR-K research reactor. The system enables simultaneous measurement of electrical conductivity and the Hall effect, with automatic temperature control and remote data acquisition. The sealed fixture, equipped with radiation-resistant wiring and a temperature control, allows for continuous measurement of remote material properties at neutron fluences exceeding 10¹⁸ cm⁻², eliminating the limitations associated with post-irradiation handling of radioactive samples. The technique was successfully applied to the two different InGaAs-based heterostructures, revealing distinct mechanisms of radiation-induced modification: degradation of mobility and carrier concentration in the InGaAs quantum well structure on GaAs substrate, and transmutation-induced doping effects in the heterostructure on InP substrate. The developed methodology provides a reliable platform for evaluating radiation resistance and optimizing materials for magnetic sensors and electronic components designed for high-radiation environments. Full article

Photobiomodulation (PBM) harnesses near-infrared (NIR) light to stimulate cellular processes, offering non-invasive treatment options for a range of conditions, including chronic wounds, inflammation, and neurological disorders. NIR light-emitting diodes (LEDs) are emerging as safer and more scalable alternatives to conventional lasers, but optimizing their performance for clinical use remains a challenge. This perspective explores the latest advances in NIR-emitting materials, spanning Group III–V, IV, and II–VI semiconductors, organic small molecules, polymers, and perovskites, with an emphasis on their applicability to PBM. Particular attention is given to the promise of perovskite LEDs, including lead-free and lanthanide-doped variants, for delivering narrowband, tunable NIR emission. Furthermore, we examine photonic and plasmonic engineering strategies that enhance light extraction, spectral precision, and device efficiency. By integrating advances in materials science and nanophotonics, it is increasingly feasible to develop flexible, biocompatible, and high-performance NIR LEDs tailored for next-generation therapeutic applications. Full article

The development of an integrated circuit faces the challenge of the physical limit of Moore’s Law. One of the most important “Beyond Moore” challenges is the scaling down of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) versus their increasing static power consumption. This is because, at room temperature, the thermal emission transportation mechanism will cause a physical limitation on subthreshold swing (SS), which is fundamentally limited to a minimum value of 60 mV/decade for MOSFETs, and accompanied by an increase in off-state leakage current with the process of scaling down. Moreover, the impacts of short-channel effects on device performance also become an increasingly severe problem with channel length scaling down. Due to the band-to-band tunneling mechanism, Tunnel Field-Effect Transistors (TFETs) can reach a far lower SS than MOSFETs. Recent research works indicated that TFETs are already becoming some of the promising candidates of conventional MOSFETs for ultra-low-power applications. This paper provides a review of some advances in materials and structures along the evolutionary process of TFETs. An in-depth discussion of both experimental works and simulation works is conducted. Furthermore, the performance of TFETs with different structures and materials is explored in detail as well, covering Si, Ge, III-V compounds and 2D materials, alongside different innovative device structures. Additionally, this work provides an outlook on the prospects of TFETs in future ultra-low-power electronics and biosensor applications. Full article

The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of fully relaxed GaAs nanoislands on complementary metal oxide semiconductor (CMOS)-compatible Si(001) nanotip wafers. Nanotip wafers were fabricated using a state-of-the-art 0.13 μm SiGe Bipolar CMOS pilot line on 200 mm wafers. Our investigation focuses on understanding the influence of the growth conditions on the morphology, crystalline structure, and defect formation of the GaAs islands. The morphological, structural, and optical properties of the GaAs islands were characterized using scanning electron microscopy, high-resolution X-ray diffraction, and photoluminescence spectroscopy. For samples with less deposition, the GaAs islands exhibit a monomodal size distribution, with an average effective diameter ranging between 100 and 280 nm. These islands display four distinct facet orientations corresponding to the {001} planes. As the deposition increases, larger islands with multiple crystallographic facets emerge, accompanied by a transition from a monomodal to a bimodal growth mode. Single twinning is observed in all samples. However, with increasing deposition, not only a bimodal size distribution occurs, but also the volume fraction of the twinned material increases significantly. These findings shed light on the growth dynamics of nanoheteroepitaxial GaAs and contribute to ongoing efforts toward CMOS-compatible Si-based nanophotonic technologies. Full article

This investigation is centered on the analysis of frequency response characteristics of a p-i-n photodiode using InxGa_1−xAs/InP. The InGaAs/InP can be developed under three conditions: compression, tensile strain, and lattice matching. Initially, we performed calculations on strain, bandgap energy (E_g), and absorption coefficient. We then optimized the influence of indium concentration (x) on stability, critical thickness, bandgap energy, and absorption coefficient. The effects of temperature and deformation on E_g were also studied. Finally, we optimized the cutoff frequency (f_c), capacitive effects, and response frequency by considering the impact of x, active layer thickness (d), and surface area (S). For our future endeavors, we intend to explore additional parameters that may affect the p-i-n response. In future work, we can add transparent double layers in the i. InGaAs layer to reduce the transit time, leading to the development of an ultrafast photodiode. Full article

Perovskite, as a promising class of photodetection material, demonstrates considerable potential in replacing conventional bulk light-detection materials such as silicon, III–V, or II–VI compound semiconductors and has been widely applied in various special light detection. Relying solely on the intrinsic photoelectric properties of perovskite gradually fails to meet the evolving requirements attributed to the escalating demand for low-cost, lightweight, flexible, and highly integrated photodetection. Direct manipulation of electrons and photons with differentiation of local electronic field through predesigned optical nanostructures is a promising strategy to reinforce the detectivity. This review provides a concise overview of the optical manipulation strategy in perovskite photodetector through various optical nanostructures, such as isolated metallic nanoparticles and continuous metallic gratings. Furthermore, the special light detection techniques involving more intricate nanostructure designs have been summarized and discussed. Reviewing these optical manipulation strategies could be beneficial to the next design of perovskite photodetector with high performance and special light recognition. Full article

We simulate hadrons impinging on a homogeneous lead tungstate (${\mathrm{PbWO}}_4$) calorimeter using GEANT4 software to investigate how the resulting light yield and its temporal structure, as detected by an array of light-sensitive sensors, can be processed by a neuromorphic computing system. Our model encodes temporal photon distributions as spike trains and employs a fully connected spiking neural network to estimate the total deposited energy, as well as the position and spatial distribution of the light emissions within the sensitive material. The extracted primitives offer valuable topological information about the shower development in the material, achieved without requiring a segmentation of the active medium. A potential nanophotonic implementation using III-V semiconductor nanowires is discussed. It can be both fast and energy efficient. Full article

Boron phosphide (BP), an emerging III–V semiconductor, has garnered significant interest because of its exceptional structural stability, wide bandgap, high thermal conductivity, and tunable electronic properties. This review provides a comprehensive analysis of BP, commencing with its distinctive structural characteristics and proceeding with a detailed examination of its exceptional physicochemical properties. Recent progress in BP synthesis is critically examined, with a focus on key fabrication strategies such as chemical vapor deposition, high-pressure co-crystal melting, and molten salt methods. These approaches have enabled the controlled growth of high-quality BP nanostructures, including bulk crystals, nanoparticles, nanowires, and thin films. Furthermore, the review highlights the broad application spectrum of BP, spanning photodetectors, sensors, thermal management, energy conversion, and storage. Despite these advances, precise control over the growth, morphology, and phase purity of BP’s low-dimensional structures remains a critical challenge. Addressing these limitations requires innovative strategies in defect engineering, heterostructure design, and scalable manufacturing techniques. This review concludes by outlining future research directions that are essential for unlocking BP’s potential in next-generation electronics, sustainable energy technologies, and multifunctional materials. Full article

Wet etching is the mainstream fabrication method for single-bar quantum cascade lasers (QCLs). Different etching solutions result in varying etching effects on III-V semiconductor materials. In this study, an efficient and nearly ideal etching solution ratio was proposed for simultaneously etching both InP and GaInAs/AlInAs, and the surface chemical reactions induced by each component of the etching solution during the process were investigated. Using univariate and single-component experiments, coupled with various characterization techniques such as atomic force microscopy (AFM), stylus profilometer, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM), we found that the ratio of HBr to hydrogen peroxide significantly determines the etching rate, while the ratio of HCl to hydrogen peroxide affects the interface roughness. The aim of this study was to provide a comprehensive understanding of the effects of different etching solution components, thereby enhancing the understanding of the wet etching process for InP/GaInAs/AlInAs materials. These findings offer valuable insights into efficient QCL fabrication processes and contribute to the advancement of the field. Full article

The third-generation semiconductors have the characteristics of a large bandgap, a high breakdown electric field, a fast electron saturation rate, high-temperature resistance, corrosion resistance, and radiation resistance, making them the preferred core materials and devices for cutting-edge high-tech fields, such as mobile communication, new energy vehicles, and smart grids in the future. The III–V compound semiconductors are a typical representative of them. In order to discover and explore new III–V semiconductor materials more efficiently and accurately, this paper adopts a machine-learning method optimized by the beetle algorithm and combined with first-principle calculation verification to efficiently and accurately predict the performance of III–V nitride materials and study their physicochemical properties. This study improved the prediction efficiency of nitrogen-rich III–V semiconductor materials through the combination of machine learning and first principles, providing a new approach for the efficient and accurate prediction of semiconductor materials. Full article

Indium Arsenide is a III–V semiconductor with low electron effective mass, a small band gap, strong spin–orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on In_xAl_1−xAs metamorphic buffers. Differently than InAs substrates, these buffers have the advantage of being insulating at cryogenic temperatures, which allows for multiple device operations on the same wafer and thus making the approach scalable. The structural properties of the InAs layers were investigated by high-resolution X-ray diffraction, demonstrating the high crystal quality of the InAs layers. Furthermore, their transport properties, such as total and sheet carrier concentration, sheet resistance, and carrier mobility, were measured in the van der Pauw configuration at room temperature. A simple conduction model was employed to quantify the surface, bulk, and interface contributions to the overall carrier concentration and mobility. Full article

A gallium nitride (GaN) semiconductor is one of the most promising materials integrated into biomedical devices to play the roles of connecting, monitoring, and manipulating the activity of biological components, due to its excellent photoelectric properties, chemical stability, and biocompatibility. In this work, it was found that the photogenerated free charge carriers of the GaN substrate, as an exogenous stimulus, served to promote neural stem cells (NSCs) to differentiate into neurons. This was observed through the systematic investigation of the effect of the persistent photoconductivity (PPC) of GaN on the differentiation of primary NSCs from the embryonic rat cerebral cortex. NSCs were directly cultured on the GaN surface with and without ultraviolet (UV) irradiation, with a control sample consisting of tissue culture polystyrene (TCPS) in the presence of fetal bovine serum (FBS) medium. Through optical microscopy, the morphology showed a greater number of neurons with the branching structures of axons and dendrites on GaN with UV irradiation. The immunocytochemical results demonstrated that GaN with UV irradiation could promote the NSCs to differentiate into neurons. Western blot analysis showed that GaN with UV irradiation significantly upregulated the expression of two neuron-related markers, βIII-tubulin (Tuj-1) and microtubule-associated protein 2 (MAP-2), suggesting that neurite formation and the proliferation of NSCs during differentiation were enhanced by GaN with UV irradiation. Finally, the results of the Kelvin probe force microscope (KPFM) experiments showed that the NSCs cultured on GaN with UV irradiation displayed about 50 mV higher potential than those cultured on GaN without irradiation. The increase in cell membrane potential may have been due to the larger number of photogenerated free charges on the GaN surface with UV irradiation. These results could benefit topical research and the application of GaN as a biomedical material integrated into neural interface systems or other bioelectronic devices. Full article

Gallium nitride (GaN) semiconductors and their broadband InGaN alloys in their hexagonal phase have been extensively studied over the past 30 years and have allowed the development of blue-ray lasers, which are essential disruptive developments. In addition to high-efficiency white light-emitting diodes, which have revolutionized lighting technologies and generated a great industry around these semiconductors, several transistors have been developed that take advantage of the characteristics of these semiconductors. These include power transistors for high-frequency applications and high-power transistors for power electronics, among other devices, which have far superior achievements. However, less effort has been devoted to studying GaN and InGaN alloys grown in the cubic phase. The metastable or cubic phase of III-N alloys has superior characteristics compared to the hexagonal phase, mainly because of the excellent symmetry. It can be used to improve lighting technologies and develop other devices. Indium gallium nitride, In_xGa_1−xN alloy, has a variable band interval of 0.7 to 3.4 eV that covers almost the entire solar spectrum, making it a suitable material for increasing the efficiencies of photovoltaic devices. In this study, we successfully synthesized high-quality cubic InGaN films on MgO (100) substrates using plasma-assisted molecular beam epitaxy (PAMBE), demonstrating tunable emissions across the visible spectrum by varying the indium concentration. We significantly reduced the defect density and enhanced the crystalline quality by using an intermediate cubic GaN buffer layer. We not only developed a heterostructure with four GaN/InGaN/GaN quantum wells, achieving violet, blue, yellow, and red emissions, but also highlighted the immense potential of cubic InGaN films for high-efficiency light-emitting diodes and photovoltaic devices. Achieving better p-type doping levels is crucial for realizing diodes with excellent performance, and our findings will pave the way for this advancement. Full article