Search Results (24)

Mycelium-based composites (MBCs) are an emerging category of cost-effective and environmentally sustainable materials that are attracting significant research and commercial interest across various industries, including construction, manufacturing, agriculture, and biomedicine. These materials harness the natural growth of fungi as a low-energy bio-fabrication method, converting abundant agricultural by-products and waste into sustainable alternatives to energy-intensive synthetic construction materials. Their affordability and eco-friendly characteristics make them attractive for both research and commercialisation. Currently, mycelium-based foams and sandwich composites are being actively developed for applications in construction. These materials offer exceptional thermal insulation, excellent acoustic absorption, and superior fire safety compared to conventional building materials like synthetic foams and engineered wood. As a result, MBCs show great potential for applications in thermal and acoustic insulation. However, their foam-like mechanical properties, high water absorption, and limited documentation of material properties restrict their use to non- or semi-structural roles, such as insulation, panelling, and furniture. This paper presents a comprehensive review of the fabrication process and the factors affecting the production and performance properties of MBCs. It addresses key elements such as fungal species selection, substrate choice, optimal growth conditions, dehydration methods, post-processing techniques, mechanical and physical properties, termite resistance, cost comparison, and life cycle assessment. Full article

Bow-tie diodes on the base of modulation-doped semiconductor structures are often used to detect radiation in GHz to THz frequency range. The operation of the bow-tie microwave diodes is based on carrier heating phenomena in an epitaxial semiconductor structure with broken geometrical symmetry. However, the electrical properties of bow-tie diodes are highly dependent on the purity of the grown epitaxial layer—specifically, the minimal number of defects—and the quality of the ohmic contacts. The quality of MBE-grown semiconductor structure depends on the presence of a buffer layer between a semiconductor substrate and an epitaxial layer. In this paper, we present an investigation of the electrical and optical properties of planar bow-tie microwave diodes fabricated using modulation-doped semiconductor structures grown via the MBE technique, incorporating either a GaAs buffer layer or a GaAs–AlGaAs super-lattice buffer between the semi-insulating substrate and the active epitaxial layer. These properties include voltage sensitivity, electrical resistance, I–V characteristic asymmetry, nonlinearity coefficient, and photoluminescence. The investigation revealed that the buffer layer, as well as the illumination with visible light, strongly influences the properties of the bow-tie diodes. Full article

Thin films of strontium titanate, which reveal high structure quality and tunable properties prospective for microwave applications at room temperature, were grown on a semi-insulating silicon carbide substrate using magnetron sputtering for the first time. The films’ growth mechanisms were studied using medium-energy ion scattering, and the films’ structures were investigated using X-ray diffraction. The electrical characteristics of planar capacitors based on strontium titanate films were measured at a frequency of 2 GHz using a high-precision resonance technique. It is shown that the tendency to improve the crystalline structure of strontium titanate film with an increase in the substrate temperature is most pronounced for films deposited at elevated working gas pressure under low supersaturation conditions. Planar capacitors formed on the basis of oriented SrTiO₃ films on silicon carbide showed tunability n = 36%, with a loss tangent of 0.008–0.009 at a level of slow relaxation of capacitance, which is significantly lower than the data published currently regarding planar tunable ferroelectric elements. This is the first successful attempt to realize a planar SrTiO₃ capacitor on a silicon carbide substrate, which exhibits a commutation quality factor more than 2500 at microwaves. Full article

Planar microwave bow-tie diodes on bases of selectively doped semiconductor structures are successfully used in the detection and imaging of electromagnetic radiation in millimeter and submillimeter wavelength ranges. Although the signal formation mechanism in these high-frequency diodes is said to be based on charge-carrier heating in a semiconductor in a strong electric field, the nature of the electrical signal across the bow-tie diodes is not yet properly identified. In this research paper, we present a comprehensive study of a series of various planar bow-tie diodes, starting with a simple asymmetrically shaped submicrometer-thick n-GaAs layer and finishing with bow-tie diodes based on selectively doped GaAs/AlGaAs structures of different electrical conductivity. The planar bow-tie diodes were fabricated on two different types of high-resistivity substrates: bulky semi-insulating GaAs substrate and elastic dielectric polyimide film of micrometer thickness. The microwave diodes were investigated using DC and high-frequency probe stations, which allowed us to examine a sufficient number of diodes and collect a large amount of data to perform a statistical analysis of the electrical parameters of these diodes. The use of probe stations made it possible to analyze the properties of the bow-tie diodes and clarify the nature of the detected voltage in the dark and under white-light illumination. The investigation revealed that the properties of various bow-tie diodes are largely determined by the energy states residing in semiconductor bulk, surface, and interfaces. It is most likely that these energy states are responsible for the slow relaxation processes observed in the studied bow-tie diodes. Full article

Recently, there has been significant interest in type-II superlattice (T2SL) infrared detectors based on both InAs/GaSb and InAs/InAsSb material systems, and fully operating devices have been presented in the mid- (MWIR) and long-wavelength (LWIR) infrared ranges. In addition, theoretical simulations and experimental reports show high-performance T2SL devices in the very-long-wavelength infrared range (VLWIR) (cutoff wavelength, λ_c ≥ 12 μm). Devices in this wavelength range are essential for space-based applications. In VLWIR, the existing detectors with satisfactory performance are extrinsic silicon detectors operating under heavy, bulky and short-lifetime multistage cryocoolers. These disadvantages are mainly critical for space applications, and thus, developing a device exhibiting a higher operating temperature (HOT) is of high priority. We report on a photoconductive T2SL InAs/InAsSb detector with λ_c > 18 μm (limited by a GaAs substrate) and high-operating-temperature (HOT) conditions (T = 210–240 K) grown on thick semi-insulating GaA substrates by molecular beam epitaxy (MBE). Full article

In this study, carbon-doped semi-insulating N-polar GaN on a sapphire substrate was prepared using a propane precursor. Controlling the deposition rate of N-polar GaN helped to improve the carbon incorporation efficiency, providing a semi-insulating behavior. The material quality and surface roughness of the N-polar GaN improved with modified deposition conditions. C-doping using 1.8 mmol/min of propane gave an abrupt doping profile near the GaN/sapphire interface, which was useful for obtaining semi-insulating N-polar GaN grown on sapphire. This study shows that further development of the deposition process will allow for improved material quality and produce a state-of-the-art N-polar semi-insulating GaN layer. Full article

In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging. Full article

In this study, we report enhancement of terahertz (THz) radiation with indium-tin-oxide (ITO) thin-film deposited on semi-insulating gallium arsenide substrate (SI-GaAs). The amplitude of THz emission from both ITO/SI-GaAs and bare SI-GaAs substrate as a function of optical pump (i) incident angle, (ii) polarization angle, and (iii) power were investigated. The enhancement of peak amplitude of a THz pulse transmitted through the ITO/SI-GaAs sample in comparison to bare SI-GaAs substrate varied from 100% to 0% when the pump incidence angle changed from 0° to 50°. The maximum enhancement ratio of peak amplitude for a coated sample relative to the bare substrate is approximately up to 2.5 times at the minimum pump intensity of 3.6 TW/m² and gradually decreased to one at the maximum pump intensity of 20 TW/m². From outcomes of these studies, together with data on surface and material characterization of the samples, we show that THz emission originates from the ITO/GaAs interfaces. Further, both interface-field-induced transient current and field-induced optical rectification contribute to the observed THz signal. Observed enhancement was tentatively attributed to surface-plasmon-induced local field enhancement, coupled with constructive interference of forward and retro-reflected backward THz emission from the ITO/GaAs interfaces. The polarity-flip reported previously for very thin Au-coated GaAs was not observed. This was explained by the wide-bandgap, transparency and lower free carriers of ITO. For best results, the incident angle should be in the range of 0 to 30° and the incident polarization should be 0 to 45°. We further predict that the ITO thin film of suitable thickness or with engineered nanostructures, post-annealed under optimum conditions may lead to further enhancement of THz radiation from ITO-coated semiconductor surfaces. Full article

The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al₂O₃ layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO₂ insulating layer. All samples were exposed to a fast-neutron fluence of ≈$7\times {10}^{17}$ cm⁻². The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate. Full article

Vertically aligned carbon nanotubes (VACNT) are manufactured nanomaterials with excellent properties and great potential for numerous applications. Recently, research has intensified toward achieving VACNT synthesis on different planar and non-planar substrates of various natures, mainly dependent on the user-defined application. Indeed, VACNT growth has to be adjusted and optimized according to the substrate nature and shape to reach the requirements for the application envisaged. To date, different substrates have been decorated with VACNT, involving the use of diffusion barrier layers (DBLs) that are often insulating, such as SiO₂ or Al₂O₃. These commonly used DBLs limit the conducting and other vital physico-chemical properties of the final nanomaterial composite. One interesting route to improve the contact resistance of VACNT on a substrate surface and the deficient composite properties is the development of semi-/conducting interlayers. The present review summarizes different methods and techniques for the deposition of suitable conducting interfaces and controlled growth of VACNT on diverse flat and 3-D fibrous substrates. Apart from exhibiting a catalytic efficiency, the DBL can generate a conducting and adhesive interface involving performance enhancements in VACNT composites. The abilities of different conducting interlayers are compared for VACNT growth and subsequent composite properties. A conducting interface is also emphasized for the synthesis of VACNT on carbonaceous substrates in order to produce cost-effective and high-performance nano-engineered carbon composites. Full article

In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p⁺ Si/SiO₂ by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating GaAs substrates are included as comparative samples. In all cases, the unintentionally doped GaSb is p-type, with a hole concentration in the range of 2 × 10¹⁶ to 2 × 10¹⁷ cm⁻³. Exceptional hole mobilities are measured for polycrystalline GaSb on SiO₂ in the range of 9–66 cm²/Vs, exceeding the reported values for many other semiconductors grown at low temperatures. A mobility of 9.1 cm²/Vs is recorded for an amorphous GaSb layer in a poly-GaAs/amorphous GaSb heterostructure. Mechanisms limiting the mobility in the GaSb thin films are investigated. It is found that for the GaSb grown directly on GaAs, the mobility is phonon-limited, while the GaSb deposited directly on SiO₂ has a Coulomb scattering limited mobility, and the poly-GaAs/amorphous GaSb heterostructure on SiO₂ displays a mobility which is consistent with variable-range-hopping. GaSb films grown at low temperatures demonstrate a far greater potential for implementation in p-channel devices than for implementation in ICs. Full article

The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-Al_xGa_1-xAs layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve as reliable and inexpensive sensors of microwave radiation in the millimeter wavelength range; they sense electromagnetic radiation directly, without any external bias voltage at room temperature. The investigation revealed a strong dependence of the detection properties of the microwave diodes on AlAs mole fraction x: in the K_a microwave frequency range, the median value of voltage responsivity is several volts per watt in the case of GaAs-based diodes (x = 0), and it substantially increases, reaching hundreds of volts per watt at higher x values. Also, a model enabling us to forecast the responsivity of the sensor in other frequency ranges is proposed. Full article

Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were developed as the method for the investigation of high-frequency characteristics of two-dimensional electron gas and GaN:C buffer layers in AlGaN/AlN/GaN heterostructures grown on a semi-insulating SiC substrate. The reflectance and transmittance spectra of the selected heterostructure layers were studied after the top layers were removed by a reactive ion etching. Results were numerically analyzed using the transfer matrix method taking into account the high-frequency electron conductivity via a Drude model and complex dielectric permittivity of each epitaxial layer via a one-phonon-resonance approximation. Good agreement between the experiment and theory was achieved revealing the temperature dependent electron effective mass in AlGaN/AlN/GaN high electron mobility transistor structures and the small damping factors of optical phonons due to high crystal quality of the epitaxial layers fabricated on the SiC substrate. Full article

In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer graphene and quasi-freestanding monolayer graphene on 4H–SiC. We show that by introducing Ar at higher temperatures, $T_{\mathrm{Ar}}$, one can shift the formation of the buffer layer to higher temperatures for both n-type and semi-insulating substrates. A scenario explaining the observed suppressed formation of buffer layer at higher $T_{\mathrm{Ar}}$ is proposed and discussed. Increased $T_{\mathrm{Ar}}$ is also shown to reduce the $s{p}^3$ hybridization content and defect densities in the buffer layer on n-type conductive substrates. Growth on semi-insulating substrates results in ordered buffer layer with significantly improved structural properties, for which $T_{\mathrm{Ar}}$ plays only a minor role. The free charge density and mobility parameters of monolayer graphene and quasi-freestanding monolayer graphene with different $T_{\mathrm{Ar}}$ and different environmental treatment conditions are determined by contactless terahertz optical Hall effect. An efficient annealing of donors on and near the SiC surface is suggested to take place for intrinsic monolayer graphene grown at 2000 ${}^{\circ }$C, and which is found to be independent of $T_{\mathrm{Ar}}$. Higher $T_{\mathrm{Ar}}$ leads to higher free charge carrier mobility parameters in both intrinsically n-type and ambient p-type doped monolayer graphene. $T_{\mathrm{Ar}}$ is also found to have a profound effect on the free hole parameters of quasi-freestanding monolayer graphene. These findings are discussed in view of interface and buffer layer properties in order to construct a comprehensive picture of high-temperature sublimation growth and provide guidance for growth parameters optimization depending on the targeted graphene application. Full article

This work is devoted to the development and optimization of the parameters of graphene-based sensors. The graphene films used in the present study were grown on semi-insulating 6H-SiC substrates by thermal decomposition of SiC at the temperature of ~1700 °C. The results of measurements by Auger and Raman spectroscopies confirmed the presence of single-layer graphene on the silicon carbide surface. Model approach to the theory of adsorption on epitaxial graphene is presented. It is demonstrated that the Green-function method in conjunction with the simple substrate models permit one to obtain analytical results for the charge transfer between adsorbed molecules and substrate. The sensor structure was formed on the graphene film by laser. Initially, a simpler gas sensor was made. The sensors developed in this study demonstrated sensitivity to the NO₂ concentration at the level of 1–0.01 ppb. The results obtained in the course of development and the results of testing of the graphene-based sensor for detection of protein molecules are also presented. The biosensor was fabricated by the technology previously developed for the gas sensor. The working capacity of the biosensor was tested with an immunochemical system constituted by fluorescein and monoclonal antibodies (mAbs) binding this dye. Full article