Enhanced Crystallinity of SrTiO3 Films on a Silicon Carbide Substrate: Structural and Microwave Characterization

Tumarkin, Andrei; Sapego, Eugene; Bogdan, Alexey; Karamov, Artem; Serenkov, Igor; Sakharov, Vladimir

doi:10.3390/app14219672

Open AccessArticle

Enhanced Crystallinity of SrTiO₃ Films on a Silicon Carbide Substrate: Structural and Microwave Characterization

by

Andrei Tumarkin

^1,*

,

Eugene Sapego

¹

,

Alexey Bogdan

¹

,

Artem Karamov

¹,

Igor Serenkov

² and

Vladimir Sakharov

²

¹

Department of Physical Electronics and Technology, Saint Petersburg Electrotechnical University “LETI”, 197022 Saint Petersburg, Russia

²

Abram Fedorovich Ioffe Institute of Physics and Technology, Russian Academy of Sciences, 194021 Saint Petersburg, Russia

^*

Author to whom correspondence should be addressed.

Appl. Sci. 2024, 14(21), 9672; https://doi.org/10.3390/app14219672

Submission received: 13 September 2024 / Revised: 14 October 2024 / Accepted: 18 October 2024 / Published: 23 October 2024

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Abstract

Thin films of strontium titanate, which reveal high structure quality and tunable properties prospective for microwave applications at room temperature, were grown on a semi-insulating silicon carbide substrate using magnetron sputtering for the first time. The films’ growth mechanisms were studied using medium-energy ion scattering, and the films’ structures were investigated using X-ray diffraction. The electrical characteristics of planar capacitors based on strontium titanate films were measured at a frequency of 2 GHz using a high-precision resonance technique. It is shown that the tendency to improve the crystalline structure of strontium titanate film with an increase in the substrate temperature is most pronounced for films deposited at elevated working gas pressure under low supersaturation conditions. Planar capacitors formed on the basis of oriented SrTiO₃ films on silicon carbide showed tunability n = 36%, with a loss tangent of 0.008–0.009 at a level of slow relaxation of capacitance, which is significantly lower than the data published currently regarding planar tunable ferroelectric elements. This is the first successful attempt to realize a planar SrTiO₃ capacitor on a silicon carbide substrate, which exhibits a commutation quality factor more than 2500 at microwaves.

Keywords: strontium titanate; silicon carbide; thin films; nonlinear dielectric properties; microwave applications

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MDPI and ACS Style

Tumarkin, A.; Sapego, E.; Bogdan, A.; Karamov, A.; Serenkov, I.; Sakharov, V. Enhanced Crystallinity of SrTiO₃ Films on a Silicon Carbide Substrate: Structural and Microwave Characterization. Appl. Sci. 2024, 14, 9672. https://doi.org/10.3390/app14219672

AMA Style

Tumarkin A, Sapego E, Bogdan A, Karamov A, Serenkov I, Sakharov V. Enhanced Crystallinity of SrTiO₃ Films on a Silicon Carbide Substrate: Structural and Microwave Characterization. Applied Sciences. 2024; 14(21):9672. https://doi.org/10.3390/app14219672

Chicago/Turabian Style

Tumarkin, Andrei, Eugene Sapego, Alexey Bogdan, Artem Karamov, Igor Serenkov, and Vladimir Sakharov. 2024. "Enhanced Crystallinity of SrTiO₃ Films on a Silicon Carbide Substrate: Structural and Microwave Characterization" Applied Sciences 14, no. 21: 9672. https://doi.org/10.3390/app14219672

APA Style

Tumarkin, A., Sapego, E., Bogdan, A., Karamov, A., Serenkov, I., & Sakharov, V. (2024). Enhanced Crystallinity of SrTiO₃ Films on a Silicon Carbide Substrate: Structural and Microwave Characterization. Applied Sciences, 14(21), 9672. https://doi.org/10.3390/app14219672

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Enhanced Crystallinity of SrTiO₃ Films on a Silicon Carbide Substrate: Structural and Microwave Characterization

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