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Keywords = residual direct-current voltage

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20 pages, 6122 KiB  
Article
Surface Charge and Electric Field Distribution of Direct-Current Gas-Insulated Transmission Lines’ Basin-Type Insulators Under Multi-Field Coupling
by Junran Jia, Xin Lin, Zhenxin Geng and Jianyuan Xu
Appl. Sci. 2025, 15(13), 7061; https://doi.org/10.3390/app15137061 - 23 Jun 2025
Viewed by 317
Abstract
In direct-current gas-insulated transmission lines (DC GIL), complex heat transfer processes accelerate surface charge accumulation on insulators, causing local electric field distortion and elevating the risk of surface flashover. This study develops a three-dimensional multi-physics coupled mathematical model for ±200 kV DC GIL [...] Read more.
In direct-current gas-insulated transmission lines (DC GIL), complex heat transfer processes accelerate surface charge accumulation on insulators, causing local electric field distortion and elevating the risk of surface flashover. This study develops a three-dimensional multi-physics coupled mathematical model for ±200 kV DC GIL basin-type insulators. The bulk and surface conductivity of insulator materials were experimentally measured under varying temperature and electric field conditions, with fitting equations derived to describe their behavior. The model investigates surface charge accumulation and electric field distribution under DC voltage and polarity-reversal conditions, incorporating multi-field coupling effects. Results show that, at a 3150 A current in a horizontally arranged DC GIL, insulator temperatures reach approximately 62.8 °C near the conductor and 32 °C near the enclosure, with the convex surface exhibiting higher temperatures than the concave surface and distinct radial variations. Under DC voltage, surface charge accumulates faster in high-temperature regions, with both charge and electric field distributions stabilizing after approximately 300 h, following significant changes within the first 40 h. Following stabilization, the distribution of surface charge and electric field varies across different radial directions. During polarity reversal, residual surface charges cause electric field distortion, increasing maximum field strength by 13.6% and 47.2% on the convex and concave surfaces, respectively, with greater distortion on the concave surface, as calculated from finite element simulations with a numerical accuracy of ±0.5% based on mesh convergence and solver tolerance. These findings offer valuable insights for enhancing DC GIL insulation performance. Full article
(This article belongs to the Special Issue Advances in Electrical Insulation Systems)
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17 pages, 4014 KiB  
Article
High-Resistance Grounding Fault Location in High-Voltage Direct Current Transmission Systems Based on Deep Residual Shrinkage Network
by Ping Huang, Junlin Huang, Shengquan Huang, Guoting Yang and Zhipeng Wu
Electronics 2025, 14(3), 628; https://doi.org/10.3390/electronics14030628 - 5 Feb 2025
Viewed by 697
Abstract
Due to the precision limitations of traditional fault location methods in identifying grounding faults in High-Voltage Direct Current (HVDC) transmission systems and considering the high occurrence probability of high-resistance grounding faults in practical engineering scenarios coupled with the sampling accuracy constraints of actual [...] Read more.
Due to the precision limitations of traditional fault location methods in identifying grounding faults in High-Voltage Direct Current (HVDC) transmission systems and considering the high occurrence probability of high-resistance grounding faults in practical engineering scenarios coupled with the sampling accuracy constraints of actual equipment, this article introduces a novel approach for high-resistance grounding fault location in HVDC transmission lines. This method integrates Variational Mode Decomposition (VMD) and Deep Residual Shrinkage Network (DRSN). Initially, VMD is employed to decompose double-ended high-resistance grounding fault signals, extracting the corresponding Intrinsic Mode Functions (IMF). These IMF signals are then preprocessed to construct the input data for the DRSN model. Upon training, the model outputs the precise fault location. To validate the effectiveness of the proposed method, a ±800 kV bipolar HVDC transmission system model is established using PSCAD/EMTDC version 4.6.2 software for simulating high-resistance grounding faults. The sampling accuracy of the model’s output signals is set to 10 kHz, aligning closely with actual engineering equipment specifications. Comprehensive simulation experiments and anti-interference analyses are conducted on the DRSN model. The results demonstrate that the fault location method based on the DRSN exhibits high accuracy in locating high-resistance grounding faults, with a maximum error of less than 1.5 km, even when considering factors such as engineering sampling frequency, fault types, and signal noise. Full article
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22 pages, 13118 KiB  
Article
An Improved Fault Localization Method for Direct Current Filters in HVDC Systems: Development and Application of the DRNCNN Model
by Xiaohui Liu, Haofeng Liu, Hui Qiao, Sihan Zhou and Liang Qin
Machines 2024, 12(3), 185; https://doi.org/10.3390/machines12030185 - 13 Mar 2024
Cited by 1 | Viewed by 1545
Abstract
This paper focus on direct current (DC) filter grounding faults to propose a novel dilated normalized residual convolutional neural network (DRNCNN) fault diagnosis model for high-voltage direct current (HVDC) transmission systems. To address the insufficiency of the traditional model’s receptive field in dealing [...] Read more.
This paper focus on direct current (DC) filter grounding faults to propose a novel dilated normalized residual convolutional neural network (DRNCNN) fault diagnosis model for high-voltage direct current (HVDC) transmission systems. To address the insufficiency of the traditional model’s receptive field in dealing with high-dimensional and nonlinear data, this paper incorporates dilated convolution and batch normalization (BN), significantly enhancing the CNN’s capability to capture complex spatial features. Furthermore, this paper integrates residual connections and parameter rectified linear units (PReLU) to optimize gradient propagation and mitigate the issue of gradient vanishing during training. These innovative improvements, embodied in the DRNCNN model, substantially increase the accuracy of fault detection, achieving a diagnostic accuracy rate of 99.28%. Full article
(This article belongs to the Section Electromechanical Energy Conversion Systems)
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21 pages, 4373 KiB  
Article
A Two-Terminal Directional Protection Method for HVDC Transmission Lines of Current Fault Component Based on Improved VMD-Hilbert Transform
by Shuhao Liu, Kunlun Han, Hongzheng Li, Tengyue Zhang and Fengyuan Chen
Energies 2023, 16(19), 6987; https://doi.org/10.3390/en16196987 - 7 Oct 2023
Cited by 4 | Viewed by 1438
Abstract
The traveling wave protection of high voltage direct current (HVDC) transmission lines is susceptible to the influence of transition resistance. As a backup protection, current differential protection has absolute selectivity, but usually requires an increase in delay to avoid misoperation caused by distributed [...] Read more.
The traveling wave protection of high voltage direct current (HVDC) transmission lines is susceptible to the influence of transition resistance. As a backup protection, current differential protection has absolute selectivity, but usually requires an increase in delay to avoid misoperation caused by distributed capacitance on the line, resulting in a longer action time. Based on this, a two-terminal directional protection method for HVDC transmission lines is proposed based on Sparrow Search Algorithm (SSA)-Variational Mode Decomposition (VMD) and Hilbert phase difference. On the basis of analyzing the directional characteristics of the current fault component at both ends of the rectifier and inverter sides under different faults, SSA is first used to optimize the parameters of VMD. The residual components representing the direction of the current fault component at both ends are extracted through VMD, and then the Hilbert phase difference of the residual components at both ends is calculated to identify faults inside and outside the line area. In addition, fault pole selection can be achieved based on the ratio of the sum of multi-band Hilbert energy of single-terminal voltage fault components at the positive and negative poles. Simulation experiments have shown that the proposed protection scheme can quickly and effectively identify fault and has good tolerance to transition resistance and noise interference. Full article
(This article belongs to the Special Issue Modeling, Simulation and Optimization of Power System)
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13 pages, 10935 KiB  
Article
Effects of Synchronous Bias Mode and Duty Cycle on Microstructure and Mechanical Properties of AlTiN Coatings Deposited via HiPIMS
by Jian-Fu Tang, Shi-Yu Huang, I-Hong Chen, Guan-Lun Shen and Chi-Lung Chang
Coatings 2023, 13(9), 1512; https://doi.org/10.3390/coatings13091512 - 27 Aug 2023
Cited by 2 | Viewed by 2031
Abstract
The good mechanical properties of metal nitrides make them ideal surface coatings for cutting tools and mold components. Conventional TiN coatings have largely been replaced by AlTiN due to their superior mechanical properties and resistance to high temperatures. In this study, we investigated [...] Read more.
The good mechanical properties of metal nitrides make them ideal surface coatings for cutting tools and mold components. Conventional TiN coatings have largely been replaced by AlTiN due to their superior mechanical properties and resistance to high temperatures. In this study, we investigated the application of bias voltage to the substrate to enhance ion bombardment during the synthesis of protective AlTiN coatings using high-power impulse magnetron sputtering (HiPIMS) with synchronous trigger-direct current (ST-DC) bias voltage. The ST-DC parameters included the duty cycle duration (3%, 6%, 12%, 18%) and turn-on time, which included synchronous (TD0) or a trigger delay of 50 μs (TD50). Scanning electron microscope images revealed that the highest deposition rate (22.1 nm/min) was achieved using TD50 with a duty cycle of 3%. The results obtained using an electron probe microanalyzer and X-ray diffractometer revealed the formation of an h-AlN structure when the Al/Ti ratio was between 0.71 and 0.74. Transmission electron microscopy and nanoindentation results revealed that transforming DC bias into synchronous bias to boost the bias output time (i.e., increasing the duty cycle) increased AlTiN grain refinement (from ~100 nm to ~55 nm) with a corresponding increase in hardness (from 22.7 GPa to 24.7 GPa) as well as an increase in residual stress within the AlTiN coating (from 0.16 GPa to −51 GPa). The excellent adhesion performance of the coatings provided further evidence indicating the importance of duty cycle and trigger delay when using pulsed-DC bias in HiPIMS. Full article
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19 pages, 5864 KiB  
Article
Aluminum Nitride Out-of-Plane Piezoelectric MEMS Actuators
by Almur A. S. Rabih, Mohammad Kazemi, Michaël Ménard and Frederic Nabki
Micromachines 2023, 14(3), 700; https://doi.org/10.3390/mi14030700 - 22 Mar 2023
Cited by 6 | Viewed by 3500
Abstract
Integrating microelectromechanical systems (MEMS) actuators with low-loss suspended silicon nitride waveguides enables the precise alignment of these waveguides to other photonic integrated circuits (PICs). This requires both in-plane and out-of-plane actuators to ensure high-precision optical alignment. However, most current out-of-plane electrostatic actuators are [...] Read more.
Integrating microelectromechanical systems (MEMS) actuators with low-loss suspended silicon nitride waveguides enables the precise alignment of these waveguides to other photonic integrated circuits (PICs). This requires both in-plane and out-of-plane actuators to ensure high-precision optical alignment. However, most current out-of-plane electrostatic actuators are bulky, while electrothermal actuators consume high power. Thus, piezoelectric actuators, thanks to their moderate actuation voltages and low power consumption, could be used as alternatives. Furthermore, piezoelectric actuators can provide displacements in two opposite directions. This study presents a novel aluminum nitride-based out-of-plane piezoelectric MEMS actuator equipped with a capacitive sensing mechanism to track its displacement. This actuator could be integrated within PICs to align different chips. Prototypes of the device were tested over the range of ±60 V, where they provided upward and downward displacements, and achieved a total average out-of-plane displacement of 1.30 ± 0.04 μm. Capacitance measurement showed a linear relation with the displacement, where at −60 V, the average change in capacitance was found to be −13.10 ± 0.89 fF, whereas at 60 V the change was 11.09 ± 0.73 fF. This study also investigates the effect of the residual stress caused by the top metal electrode, on the linearity of the displacement–voltage relation. The simulation predicts that the prototype could be modified to accommodate waveguide routing above it without affecting its performance, and it could also incorporate in-plane lateral actuators. Full article
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14 pages, 4150 KiB  
Article
Experimental Study on Electrochemical Desulfurization of Coal Liquefaction Residue
by Jianming Fan, Yongfeng Zhang, Na Li, Ruzhan Bai, Qi Liu and Xing Zhou
Molecules 2023, 28(6), 2749; https://doi.org/10.3390/molecules28062749 - 18 Mar 2023
Cited by 4 | Viewed by 2555
Abstract
The occurrence of sulfur in coal direct liquefaction residue affects its further high quality and high value utilization. Electrochemical desulfurization is characterized by mild reaction conditions, simple operation, easy separation of sulfur conversion products and little influence on the properties of the liquefied [...] Read more.
The occurrence of sulfur in coal direct liquefaction residue affects its further high quality and high value utilization. Electrochemical desulfurization is characterized by mild reaction conditions, simple operation, easy separation of sulfur conversion products and little influence on the properties of the liquefied residue. An anodic electrolytic oxidation desulphurization experiment was carried out on the liquefaction residue of the by-product of a coal-to-liquid enterprise in the slurry state. An electrochemical test and material characterization of raw materials before and after electrolysis showed that electrolytic oxidation can desulfurize the liquefaction residue under an alkaline condition. Linear sweep voltammetry (LSV) was used for the electrolysis experiments to obtain the optimal slurry concentration of 60 g/L. On this basis, the reaction kinetics were calculated, and the minimum activation energy in the interval at 0.9 (V vs. Hg/HgO) was 19.71 kJ/mol. The relationship between the electrolytic desulfurization of the liquefied residue and energy consumption was studied by the potentiostatic method. The influence of anodic potential and electrolytic temperature on the current density, cell voltage, desulfurization rate and energy consumption was investigated. The experimental results showed that the desulfurization rate and total energy consumption increase positively with the increase in reaction temperature and electrolytic potential in a certain range. The influence of the reaction temperature on the desulfurization rate and total energy consumption is more prominent than that of electrolytic potential, but the energy consumption of sulfur removal per unit mass does not show a positive correlation. Therefore, with the energy consumption per unit mass of sulfur removal as the efficiency index, the optimal experimental results were obtained: under the conditions of 0.8 (V vs. Hg/HgO) anode potential, 50 °C electrolytic temperature, 60 g/L slurry concentration and 14,400 s electrolytic time, the desulfurization rate was 18.85%, and the power consumption per unit mass of sulfur removal was 5585.74 W·s/g. The results of XPS, SEM, BET and IC showed that both inorganic and organic sulfur were removed by electrolytic oxidation, and the morphology, pore structure and chemical bond of the liquefied residue were affected by electrolytic oxidation. The research method provides a new idea and reference for the efficiency evaluation of desulfurization and hydrogen production from coal liquefaction residue. Full article
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18 pages, 7632 KiB  
Article
Thermal Aging Properties of 500 kV AC and DC XLPE Cable Insulation Materials
by Ling Zhang, Zhaowei Wang, Jihuan Tian, Shaoxin Meng and Yuanxiang Zhou
Polymers 2022, 14(24), 5400; https://doi.org/10.3390/polym14245400 - 9 Dec 2022
Cited by 15 | Viewed by 3679
Abstract
Despite similar material composition and insulation application, the alternating current (AC) cross-linked polyethylene (XLPE) and direct current (DC) XLPE materials cannot replace each other due to different voltage forms. Herein, this work presents a systematical investigation into the effects of thermal aging on [...] Read more.
Despite similar material composition and insulation application, the alternating current (AC) cross-linked polyethylene (XLPE) and direct current (DC) XLPE materials cannot replace each other due to different voltage forms. Herein, this work presents a systematical investigation into the effects of thermal aging on the material composition and properties of 500 kV-level commercial AC XLPE and DC XLPE materials. A higher content of antioxidants in the AC XLPE than in the DC XLPE was experimentally demonstrated via thermal analysis technologies, such as oxidation-induced time and oxidation-induced temperature. Retarded thermal oxidation and suppression of space charge effects were observed in thermally aged AC XLPE samples. On the other hand, the carbonyl index of DC XLPE dramatically rose when thermal aging was up to 168 h. The newly generated oxygen-containing groups provided deep trapping sites (~0.95 eV) for space charges and caused severe electric field distortion (120%) under −50 kV/mm at room temperature in the aged DC XLPE samples. For the unaged XLPE materials, the positive space charge packets were attributed to the residue crosslinking byproducts, even after being treated in vacuum at 70 °C for 24 h. Thus, it was reasoned that the DC XLPE material had a lower crosslinking degree to guarantee fewer crosslinking byproducts. This work offers a simple but accurate method for evaluating thermal oxidation resistance and space charge properties crucial for developing high-performance HVDC cable insulation materials. Full article
(This article belongs to the Special Issue Polymers and Nanotechnology for Industry 4.0)
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20 pages, 4210 KiB  
Article
Design of Mid-Point Ground with Resistors and Capacitors in Mono-Polar LVDC System
by Seung-Taek Lim, Ki-Yeon Lee, Dong-Ju Chae and Sung-Hun Lim
Energies 2022, 15(22), 8653; https://doi.org/10.3390/en15228653 - 18 Nov 2022
Cited by 4 | Viewed by 3033
Abstract
Low-voltage direct current (LVDC) systems have been increasingly studied as new efficient power systems. However, existing studies have primarily focused on power conversion designs, control, and operation, and research on ground configurations of LVDC systemsis insufficient. Consideration of the installation criteria of protective [...] Read more.
Low-voltage direct current (LVDC) systems have been increasingly studied as new efficient power systems. However, existing studies have primarily focused on power conversion designs, control, and operation, and research on ground configurations of LVDC systemsis insufficient. Consideration of the installation criteria of protective equipment and grounding systems is crucial because ground configurations in general households for end users are highly associated with the risk of human electrocution. Therefore, we investigate a mid-point grounding system using capacitors to ensure electrical safety in a mono-polar LVDC system that a general end user can directly experience in a household. MATLAB/Simulink is used to analyze the fault characteristics of the mid-point grounding system using capacitors by considering the effects of DC on the human body based on the International Electrical Code (IEC). Consequently, this paper suggests the minimum required values of the capacitors and resistors to operate the DC residual current detector (DC RCD), and the operation of the DC RCD was confirmed. By confirming the applicability of DC RCD in a household LVDC system with a mid-point grounding system using capacitors and resistors, unnecessary power loss in a mid-point grounding system and electrical accidents, such as electric shocks and fires, could be minimized. Full article
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19 pages, 6328 KiB  
Article
Fault Diagnosis of Induction Motor Using D-Q Simplified Model and Parity Equations
by Marco Antonio Rodriguez-Blanco, Victor Golikov, René Osorio-Sánchez, Oleg Samovarov, Gerardo Ortiz-Torres, Rafael Sanchez-Lara and Jose Luis Vazquez-Avila
Energies 2022, 15(22), 8372; https://doi.org/10.3390/en15228372 - 9 Nov 2022
Cited by 1 | Viewed by 2689
Abstract
Induction motors are the horsepower in the industrial environment, and among them, 3-phase induction motors (3PIMs) stand out for their robustness and standard 3-phase power supply. In the literature, there are many approaches to diagnose faults for the nonlinear 3PIM model, and the [...] Read more.
Induction motors are the horsepower in the industrial environment, and among them, 3-phase induction motors (3PIMs) stand out for their robustness and standard 3-phase power supply. In the literature, there are many approaches to diagnose faults for the nonlinear 3PIM model, and the vast majority focus on a single motor fault, although others address more faults but at the cost of greater computational complexity. In this sense, one of the methods with less computational load and early detection is the parity equation approach, which is based on analyzing the discrepancy between the input and output signals of a real process and a linear mathematical model to generate a residual signal, which contains important information about the fault and is obtained through a suitable selection of a weighting matrix W to isolate the faults as much as possible. The problem in this case study is that the 3PIM model is a nonlinear system. In this work, the fault detection method based on the parity equations approach applied in the 3PIM is explored using a simplified and proposed model of the 3PIM working in the D-Q synchronous reference frame, which is matched with the direct current motor model to guarantee both the existence of the parity space and to ensure a large set of detectable faults in the 3PIM parameters. Simulation and experimental results validate the proposed scheme and confirm a very simple set of residual equations to guarantee both early detection and a large set of detectable faults in: Stator and rotor resistances, stator and rotor inductances, as well as current, voltage, and speed sensors. Additionally, development of human machine interface (HMI) is implemented to validate the proposed scheme. Full article
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11 pages, 8075 KiB  
Article
Growth of Thin AlN Films on Si Wafers by Reactive Magnetron Sputtering: Role of Processing Pressure, Magnetron Power and Nitrogen/Argon Gas Flow Ratio
by Matilde Kammer Sandager, Christian Kjelde and Vladimir Popok
Crystals 2022, 12(10), 1379; https://doi.org/10.3390/cryst12101379 - 28 Sep 2022
Cited by 10 | Viewed by 3682
Abstract
AlN is a wide band gap semiconductor that is of growing industrial interest due to its piezoelectric properties, high breakdown voltage and thermal conductivity. Using magnetron sputtering to grow AlN thin films allows for high deposition rates and uniform coverage of large substrates. [...] Read more.
AlN is a wide band gap semiconductor that is of growing industrial interest due to its piezoelectric properties, high breakdown voltage and thermal conductivity. Using magnetron sputtering to grow AlN thin films allows for high deposition rates and uniform coverage of large substrates. One can also produce films at low substrate temperatures, which is required for many production processes. However, current models are inadequate in predicting the resulting structure of a thin film when different sputter parameters are varied. In this work, the growth of wurtzite AlN thin films has been carried out on Si(111) substrates using reactive direct current magnetron sputtering. The influence of the processing pressure, magnetron power and N2/Ar ratio on the structure of the grown films has been analyzed by investigating crystallinity, residual film stress and surface morphology using X-ray diffraction, profilometry, atomic force microscopy and scanning electron microscopy. In every case, the films were found to exhibit c-axis orientation and tensile stress. It was found that high-quality AlN films can be achieved at an N2/Ar ratio of 50% and a low pressure of 0.2 Pa. High magnetron powers (900–1200 W) were necessary for achieving high deposition rates, but they led to larger film stress. Full article
(This article belongs to the Special Issue Ferroelectric and Piezoelectric Crystals)
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12 pages, 2723 KiB  
Article
Protons in Gating the Kv1.2 Channel: A Calculated Set of Protonation States in Response to Polarization/Depolarization of the Channel, with the Complete Proposed Proton Path from Voltage Sensing Domain to Gate
by Alisher M. Kariev and Michael E. Green
Membranes 2022, 12(7), 718; https://doi.org/10.3390/membranes12070718 - 20 Jul 2022
Cited by 2 | Viewed by 2567
Abstract
We have in the past proposed that proton motion constitutes the gating current in the potassium channel Kv1.2 and is responsible for the gating mechanism. For this to happen, there must be a proton path between the voltage-sensing domain (VSD) and [...] Read more.
We have in the past proposed that proton motion constitutes the gating current in the potassium channel Kv1.2 and is responsible for the gating mechanism. For this to happen, there must be a proton path between the voltage-sensing domain (VSD) and the channel gate, and here we present quantum calculations that lead to a specific pair of proton paths, defined at the molecular level, with well-defined water molecule linkages, and with hydrogen bonding between residues; there is also at least one interpath crossover, where protons can switch paths. Quantum calculations on the entire 563-atom system give the complete geometry, the energy, and atomic charges. Calculations show that three specific residues (in the pdb 3Lut numbering, H418, E327, R326), and the T1 intracellular moiety, all of which have been shown experimentally to be involved in gating, would necessarily be protonated or deprotonated in the path between the VSD and the gate. Hydroxyl reorientation of serine and threonine residues are shown to provide a means of adjusting proton directions of motion. In the deprotonated state for K312, a low energy state, our calculations come close to reproducing the X-ray structure. The demonstration of the existence of a double proton path between VSD and gate supports the proposed proton gating mechanism; when combined with our earlier demonstration of proton generation in the VSD, and comparison with other systems that are known to move protons, we are close to achieving the definition of a complete gating mechanism in molecular detail. The coupling of the paths to the VSD, and to the PVPV section that essentially forms the gate, can be easily seen from the results of the calculation. The gate itself remains for further computations. Full article
(This article belongs to the Collection Membrane Protein Structure and Functions)
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24 pages, 2875 KiB  
Article
Frequency-Dependent Properties of the Hyperpolarization-Activated Cation Current, If, in Adult Mouse Heart Primary Pacemaker Myocytes
by Wei Hu, Robert B. Clark, Wayne R. Giles, Colleen Kondo and Henggui Zhang
Int. J. Mol. Sci. 2022, 23(8), 4299; https://doi.org/10.3390/ijms23084299 - 13 Apr 2022
Cited by 3 | Viewed by 3211
Abstract
A number of distinct electrophysiological mechanisms that modulate the myogenic spontaneous pacemaker activity in the sinoatrial node (SAN) of the mammalian heart have been investigated extensively. There is agreement that several (3 or 4) different transmembrane ionic current changes (referred to as the [...] Read more.
A number of distinct electrophysiological mechanisms that modulate the myogenic spontaneous pacemaker activity in the sinoatrial node (SAN) of the mammalian heart have been investigated extensively. There is agreement that several (3 or 4) different transmembrane ionic current changes (referred to as the voltage clock) are involved; and that the resulting net current interacts with direct and indirect effects of changes in intracellular Ca2+ (the calcium clock). However, significant uncertainties, and important knowledge gaps, remain concerning the functional roles in SAN spontaneous pacing of many of the individual ion channel- or exchanger-mediated transmembrane current changes. We report results from patch clamp studies and mathematical modeling of the hyperpolarization-activated current, If, in the generation/modulation of the diastolic depolarization, or pacemaker potential, produced by individual myocytes that were enzymatically isolated from the adult mouse sinoatrial node (SAN). Amphotericin-mediated patch microelectrode recordings at 35 °C were made under control conditions and in the presence of 5 or 10 nM isoproterenol (ISO). These sets of results were complemented and integrated with mathematical modeling of the current changes that take place in the range of membrane potentials (−70 to −50 mV), which corresponds to the ‘pacemaker depolarization’ in the adult mouse SAN. Our results reveal a very small, but functionally important, approximately steady-state or time-independent current generated by residual activation of If channels that are expressed in these pacemaker myocytes. Recordings of the pacemaker depolarization and action potential, combined with measurements of changes in If, and the well-known increases in the L-type Ca2+ current, ICaL, demonstrated that ICaL activation, is essential for myogenic pacing. Moreover, after being enhanced (approximately 3-fold) by 5 or 10 nM ISO, ICaL contributes significantly to the positive chronotropic effect. Our mathematical model has been developed in an attempt to better understand the underlying mechanisms for the pacemaker depolarization and action potential in adult mouse SAN myocytes. After being updated with our new experimental data describing If, our simulations reveal a novel functional component of If in adult mouse SAN. Computational work carried out with this model also confirms that in the presence of ISO the residual activation of If and opening of ICaL channels combine to generate a net current change during the slow diastolic depolarization phase that is essential for the observed accelerated pacemaking rate of these SAN myocytes. Full article
(This article belongs to the Special Issue New Insights into Cardiac Ion Channel Regulation 2.0)
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14 pages, 3206 KiB  
Article
Physical Properties of Thermally Crosslinked Fluorinated Polyimide and Its Application to a Liquid Crystal Alignment Layer
by Jong-Soo Ahn, Su Hong Park, Na Yeon Kwon, Min Ju Cho, Sang-Hyon Paek and Dong Hoon Choi
Polymers 2021, 13(22), 3903; https://doi.org/10.3390/polym13223903 - 11 Nov 2021
Cited by 2 | Viewed by 3201
Abstract
This study demonstrated the use of a thermally crosslinked polyimide (PI) for the liquid crystal (LC) alignment layer of an LC display (LCD) cell. Polyamic acid was prepared using 4,4′-oxydianiline (ODA) and 4,4′-(hexafluoroisopropylidene) diphthalic anhydride (6FDA). The 6FDA−ODA-based polyimide (PI) prepared by the [...] Read more.
This study demonstrated the use of a thermally crosslinked polyimide (PI) for the liquid crystal (LC) alignment layer of an LC display (LCD) cell. Polyamic acid was prepared using 4,4′-oxydianiline (ODA) and 4,4′-(hexafluoroisopropylidene) diphthalic anhydride (6FDA). The 6FDA−ODA-based polyimide (PI) prepared by the thermal cyclic dehydration of the polyamic acid (PAA) was soluble in various polar solvents. After forming a thin film by mixing trifunctional epoxide [4-(oxiran-2-ylmethoxy)-N,N-bis(oxiran-2-ylmethyl)aniline] with the 6FDA−ODA-based PAA, it was confirmed that thermal curing at −110 °C caused an epoxy ring opening reaction, which could result in the formation of a networked polyimide not soluble in tetrahydrofuran. The crosslinked PI film showed a higher rigidity than the neat PI films, as measured by the elastic modulus. Furthermore, based on a dynamic mechanical analysis of the neat PI and crosslinked PI films, the glass transition temperatures (Tgs) were 217 and 339 °C, respectively, which provided further evidence of the formation of crosslinking by the addition of the epoxy reagent. After mechanical rubbing using these two PI films, an LC cell was fabricated using an anisotropic PI film as an LC alignment film. LC cells with crosslinked PI layers showed a high voltage holding ratio and low residual direct current voltage. This suggests that the crosslinked PI has good potential for use as an LC alignment layer material in advanced LCD technologies that require high performance and reliability. Full article
(This article belongs to the Special Issue Advanced Polymeric Films)
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6 pages, 1314 KiB  
Article
Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory
by Juyoung Lee, Dong-Gwan Yoon, Jae-Min Sim and Yun-Heub Song
Electronics 2021, 10(21), 2632; https://doi.org/10.3390/electronics10212632 - 28 Oct 2021
Cited by 11 | Viewed by 3655
Abstract
The effects of residual stress on a tungsten gate in a polysilicon channel in scaled 3D NAND flash memories were investigated using a technology computer-aided design simulation. The NAND strings, with respect to the distance from the tungsten slit, were also analyzed. The [...] Read more.
The effects of residual stress on a tungsten gate in a polysilicon channel in scaled 3D NAND flash memories were investigated using a technology computer-aided design simulation. The NAND strings, with respect to the distance from the tungsten slit, were also analyzed. The scaling of the spacer thickness and hole diameter induced compressive stress on the polysilicon channel. Moreover, the residual stress of polysilicon channel in the string near the tungsten slit had greater compressive stress than the string farther away. The increase in compressive stress in the polysilicon channel degraded the Bit-Line current (Ion) due to stress-induced electron mobility deterioration. Moreover, a threshold voltage shift (∆Vth) occurred in the negative direction due to conduction band lowering. Full article
(This article belongs to the Section Semiconductor Devices)
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