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Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory

1
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Korea
2
Department of Electronics Engineering, Hanyang University, Seoul 04763, Korea
*
Author to whom correspondence should be addressed.
Academic Editor: Kris Campbell
Electronics 2021, 10(21), 2632; https://doi.org/10.3390/electronics10212632
Received: 2 October 2021 / Revised: 20 October 2021 / Accepted: 26 October 2021 / Published: 28 October 2021
(This article belongs to the Section Semiconductor Devices)
The effects of residual stress on a tungsten gate in a polysilicon channel in scaled 3D NAND flash memories were investigated using a technology computer-aided design simulation. The NAND strings, with respect to the distance from the tungsten slit, were also analyzed. The scaling of the spacer thickness and hole diameter induced compressive stress on the polysilicon channel. Moreover, the residual stress of polysilicon channel in the string near the tungsten slit had greater compressive stress than the string farther away. The increase in compressive stress in the polysilicon channel degraded the Bit-Line current (Ion) due to stress-induced electron mobility deterioration. Moreover, a threshold voltage shift (∆Vth) occurred in the negative direction due to conduction band lowering. View Full-Text
Keywords: 3D NAND; hole profile; mechanical stress; polysilicon channel; scaling; TCAD 3D NAND; hole profile; mechanical stress; polysilicon channel; scaling; TCAD
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MDPI and ACS Style

Lee, J.; Yoon, D.-G.; Sim, J.-M.; Song, Y.-H. Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory. Electronics 2021, 10, 2632. https://doi.org/10.3390/electronics10212632

AMA Style

Lee J, Yoon D-G, Sim J-M, Song Y-H. Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory. Electronics. 2021; 10(21):2632. https://doi.org/10.3390/electronics10212632

Chicago/Turabian Style

Lee, Juyoung, Dong-Gwan Yoon, Jae-Min Sim, and Yun-Heub Song. 2021. "Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory" Electronics 10, no. 21: 2632. https://doi.org/10.3390/electronics10212632

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