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Keywords = piezotronic effect

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14 pages, 5466 KiB  
Article
Piezotronic and Piezo-Phototronic Effects-Enhanced Core–Shell Structure-Based Nanowire Field-Effect Transistors
by Xiang Liu, Fangpei Li, Wenbo Peng, Quanzhe Zhu, Yangshan Li, Guodong Zheng, Hongyang Tian and Yongning He
Micromachines 2023, 14(7), 1335; https://doi.org/10.3390/mi14071335 - 29 Jun 2023
Cited by 3 | Viewed by 1671
Abstract
Piezotronic and piezo-phototronic effects have been extensively applied to modulate the performance of advanced electronics and optoelectronics. In this study, to systematically investigate the piezotronic and piezo-phototronic effects in field-effect transistors (FETs), a core–shell structure-based Si/ZnO nanowire heterojunction FET (HJFET) model was established [...] Read more.
Piezotronic and piezo-phototronic effects have been extensively applied to modulate the performance of advanced electronics and optoelectronics. In this study, to systematically investigate the piezotronic and piezo-phototronic effects in field-effect transistors (FETs), a core–shell structure-based Si/ZnO nanowire heterojunction FET (HJFET) model was established using the finite element method. We performed a sweep analysis of several parameters of the model. The results show that the channel current increases with the channel radial thickness and channel doping concentration, while it decreases with the channel length, gate doping concentration, and gate voltage. Under a tensile strain of 0.39‰, the saturation current change rate can reach 38%. Finally, another core–shell structure-based ZnO/Si nanowire HJFET model with the same parameters was established. The simulation results show that at a compressive strain of −0.39‰, the saturation current change rate is about 18%, which is smaller than that of the Si/ZnO case. Piezoelectric potential and photogenerated electromotive force jointly regulate the carrier distribution in the channel, change the width of the channel depletion layer and the channel conductivity, and thus regulate the channel current. The research results provide a certain degree of reference for the subsequent experimental design of Zn-based HJFETs and are applicable to other kinds of FETs. Full article
(This article belongs to the Special Issue Nanowires for Novel Technological Applications)
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33 pages, 7187 KiB  
Review
Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics
by Yitong Wang, Wanli Xie, Wenbo Peng, Fangpei Li and Yongning He
Micromachines 2023, 14(1), 47; https://doi.org/10.3390/mi14010047 - 25 Dec 2022
Cited by 13 | Viewed by 4836
Abstract
The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, [...] Read more.
The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human–machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal–semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms’ analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting. Full article
(This article belongs to the Special Issue Advanced Technologies in Piezo-Phototronics)
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12 pages, 3657 KiB  
Article
Enhanced Electrical Transport and Photoconductivity of ZnO/ZnS Core/Shell Nanowires Based on Piezotronic and Piezo-Phototronic Effects
by Sehee Jeong and Seong-Ju Park
Appl. Sci. 2022, 12(17), 8393; https://doi.org/10.3390/app12178393 - 23 Aug 2022
Cited by 2 | Viewed by 1949
Abstract
We report a significant enhancement in the electrical transport and photoconductivity of ZnO/ZnS core/shell nanowires (NWs) compared to those of ZnO NWs via the application of compressive strain. Under a compressive strain of −0.15%, the output current of the ZnO/ZnS core/shell NWs increases [...] Read more.
We report a significant enhancement in the electrical transport and photoconductivity of ZnO/ZnS core/shell nanowires (NWs) compared to those of ZnO NWs via the application of compressive strain. Under a compressive strain of −0.15%, the output current of the ZnO/ZnS core/shell NWs increases by 91.1% compared to that under the no-strain condition, whereas that of the ZnO NWs under the same condition is 42.7%. The significant increase in the output current of the ZnO/ZnS core/shell NWs is attributed to the type-II band alignment and strain-induced piezopotential changes at the junction interface, which induce a reduction in the barrier height to enable efficient charge carrier transport. Furthermore, under UV illumination and a compressive strain of −0.15%, although the photocurrent of the ZnO/ZnS core/shell NWs increases by 4.5 times compared to that of the ZnO NWs, the relative increase in the photocurrent of the ZnO/ZnS core/shell NWs is 11.7% compared to that under the no-strain condition, while the photocurrent of the ZnO NWs increases by 32.3% under the same condition. A decrease in the increase rate in the photocurrent of the ZnO/ZnS core/shell NWs with a change in strain under UV light compared to that under the dark condition can be explained by the piezoelectric screening effect induced by photogenerated carriers. By calculating the change in the Schottky barrier height (SBH), we demonstrate that the piezoelectric potential with a change in strain decreased the SBH, thus increasing the current level. Lastly, we propose a mechanism of the piezotronic and piezo-phototronic effects under applied strain and their effects on energy-band diagrams. Full article
(This article belongs to the Special Issue Applications of Nano-Electronic Devices)
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12 pages, 1903 KiB  
Article
Interaction between Electromechanical Fields and Carriers in a Multilayered Piezoelectric Semiconductor Beam
by Renzhong Hong, Wanli Yang and Yunbo Wang
Micromachines 2022, 13(6), 857; https://doi.org/10.3390/mi13060857 - 30 May 2022
Viewed by 1990
Abstract
This study discusses the interaction between electromechanical fields and carriers in a multilayered ZnO beam where the c-axis of every two adjacent layers is alternately opposite along the thickness direction. A multi-field coupling model is proposed from the Timoshenko beam theory together with [...] Read more.
This study discusses the interaction between electromechanical fields and carriers in a multilayered ZnO beam where the c-axis of every two adjacent layers is alternately opposite along the thickness direction. A multi-field coupling model is proposed from the Timoshenko beam theory together with the phenomenological theory of piezoelectric semiconductors, including Gauss’s law and the continuity equation of currents. The analytical solutions are obtained for a bent beam with different numbers of layers. Numerical results show that polarized charges occur at the interfaces between every two adjacent layers due to the opposite electromechanical coupling effects. It was found that a series of alternating potential-barrier/well structures are induced by the polarized charges, which can be used to forbid the passing of low-energy mobile charges. Moreover, it was also observed that the induced polarized charges could weaken the shielding effect of carrier redistribution. These results are useful for the design of piezotronic devices. Full article
(This article belongs to the Special Issue Micro/Nano Resonators, Actuators, and Their Applications)
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24 pages, 3209 KiB  
Review
Recent Development of Multifunctional Sensors Based on Low-Dimensional Materials
by Qian Xu, Yang Dai, Yiyao Peng, Li Hong, Ning Yang and Zhiqiang Wang
Sensors 2021, 21(22), 7727; https://doi.org/10.3390/s21227727 - 20 Nov 2021
Cited by 10 | Viewed by 3735
Abstract
With the demand for accurately recognizing human actions and environmental situations, multifunctional sensors are essential elements for smart applications in various emerging technologies, such as smart robots, human-machine interface, and wearable electronics. Low-dimensional materials provide fertile soil for multifunction-integrated devices. This review focuses [...] Read more.
With the demand for accurately recognizing human actions and environmental situations, multifunctional sensors are essential elements for smart applications in various emerging technologies, such as smart robots, human-machine interface, and wearable electronics. Low-dimensional materials provide fertile soil for multifunction-integrated devices. This review focuses on the multifunctional sensors for mechanical stimulus and environmental information, such as strain, pressure, light, temperature, and gas, which are fabricated from low-dimensional materials. The material characteristics, device architecture, transmission mechanisms, and sensing functions are comprehensively and systematically introduced. Besides multiple sensing functions, the integrated potential ability of supplying energy and expressing and storing information are also demonstrated. Some new process technologies and emerging research areas are highlighted. It is presented that optimization of device structures, appropriate material selection for synergy effect, and application of piezotronics and piezo-phototronics are effective approaches for constructing and improving the performance of multifunctional sensors. Finally, the current challenges and direction of future development are proposed. Full article
(This article belongs to the Section Sensor Materials)
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14 pages, 4434 KiB  
Article
Analysis of Flexural Vibrations of a Piezoelectric Semiconductor Nanoplate Driven by a Time-Harmonic Force
by Mengen Li, Qiaoyun Zhang, Bingbing Wang and Minghao Zhao
Materials 2021, 14(14), 3926; https://doi.org/10.3390/ma14143926 - 14 Jul 2021
Cited by 22 | Viewed by 2577
Abstract
The performance of devices fabricated from piezoelectric semiconductors, such as sensors and actuators in microelectromechanical systems, is superior; furthermore, plate structures are the core components of these smart devices. It is thus important to analyze the electromechanical coupling properties of piezoelectric semiconductor nanoplates. [...] Read more.
The performance of devices fabricated from piezoelectric semiconductors, such as sensors and actuators in microelectromechanical systems, is superior; furthermore, plate structures are the core components of these smart devices. It is thus important to analyze the electromechanical coupling properties of piezoelectric semiconductor nanoplates. We established a nanoplate model for the piezoelectric semiconductor plate structure by extending the first-order shear deformation theory. The flexural vibrations of nanoplates subjected to a transversely time-harmonic force were investigated. The vibrational modes and natural frequencies were obtained by using the matrix eigenvalue solver in COMSOL Multiphysics 5.3a, and the convergence analysis was carried out to guarantee accurate results. In numerical cases, the tuning effect of the initial electron concentration on mechanics and electric properties is deeply discussed. The numerical results show that the initial electron concentration greatly affects the natural frequency and electromechanical fields of piezoelectric semiconductors, and a high initial electron concentration can reduce the electromechanical fields and the stiffness of piezoelectric semiconductors due to the electron screening effect. We analyzed the flexural vibration of typical piezoelectric semiconductor plate structures, which provide theoretical guidance for the development of new piezotronic devices. Full article
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15 pages, 3224 KiB  
Article
Low-Temperature Growth of ZnO Nanowires from Gravure-Printed ZnO Nanoparticle Seed Layers for Flexible Piezoelectric Devices
by Andrés Jenaro Lopez Garcia, Giuliano Sico, Maria Montanino, Viktor Defoor, Manojit Pusty, Xavier Mescot, Fausta Loffredo, Fulvia Villani, Giuseppe Nenna and Gustavo Ardila
Nanomaterials 2021, 11(6), 1430; https://doi.org/10.3390/nano11061430 - 28 May 2021
Cited by 24 | Viewed by 5928
Abstract
Zinc oxide (ZnO) nanowires (NWs) are excellent candidates for the fabrication of energy harvesters, mechanical sensors, and piezotronic and piezophototronic devices. In order to integrate ZnO NWs into flexible devices, low-temperature fabrication methods are required that do not damage the plastic substrate. To [...] Read more.
Zinc oxide (ZnO) nanowires (NWs) are excellent candidates for the fabrication of energy harvesters, mechanical sensors, and piezotronic and piezophototronic devices. In order to integrate ZnO NWs into flexible devices, low-temperature fabrication methods are required that do not damage the plastic substrate. To date, the deposition of patterned ceramic thin films on flexible substrates is a difficult task to perform under vacuum-free conditions. Printing methods to deposit functional thin films offer many advantages, such as a low cost, low temperature, high throughput, and patterning at the same stage of deposition. Among printing techniques, gravure-based techniques are among the most attractive due to their ability to produce high quality results at high speeds and perform deposition over a large area. In this paper, we explore gravure printing as a cost-effective high-quality method to deposit thin ZnO seed layers on flexible polymer substrates. For the first time, we show that by following a chemical bath deposition (CBD) process, ZnO nanowires may be grown over gravure-printed ZnO nanoparticle seed layers. Piezo-response force microscopy (PFM) reveals the presence of a homogeneous distribution of Zn-polar domains in the NWs, and, by use of the data, the piezoelectric coefficient is estimated to be close to 4 pm/V. The overall results demonstrate that gravure printing is an appropriate method to deposit seed layers at a low temperature and to undertake the direct fabrication of flexible piezoelectric transducers that are based on ZnO nanowires. This work opens the possibility of manufacturing completely vacuum-free solution-based flexible piezoelectric devices. Full article
(This article belongs to the Special Issue ZnO Nanowires: Growth, Properties, and Energy Applications)
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19 pages, 4323 KiB  
Article
Magnetically Induced Carrier Distribution in a Composite Rod of Piezoelectric Semiconductors and Piezomagnetics
by Guolin Wang, Jinxi Liu, Wenjie Feng and Jiashi Yang
Materials 2020, 13(14), 3115; https://doi.org/10.3390/ma13143115 - 13 Jul 2020
Cited by 22 | Viewed by 2506
Abstract
In this work, we study the behavior of a composite rod consisting of a piezoelectric semiconductor layer and two piezomagnetic layers under an applied axial magnetic field. Based on the phenomenological theories of piezoelectric semiconductors and piezomagnetics, a one-dimensional model is developed from [...] Read more.
In this work, we study the behavior of a composite rod consisting of a piezoelectric semiconductor layer and two piezomagnetic layers under an applied axial magnetic field. Based on the phenomenological theories of piezoelectric semiconductors and piezomagnetics, a one-dimensional model is developed from which an analytical solution is obtained. The explicit expressions of the coupled fields and the numerical results show that an axially applied magnetic field produces extensional deformation through piezomagnetic coupling, the extension then produces polarization through piezoelectric coupling, and the polarization then causes the redistribution of mobile charges. Thus, the composite rod exhibits a coupling between the applied magnetic field and carrier distribution through combined piezomagnetic and piezoelectric effects. The results have potential applications in piezotronics when magnetic fields are relevant. Full article
(This article belongs to the Section Smart Materials)
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25 pages, 4303 KiB  
Review
Innovation Strategy Selection Facilitates High-Performance Flexible Piezoelectric Sensors
by Shengshun Duan, Jun Wu, Jun Xia and Wei Lei
Sensors 2020, 20(10), 2820; https://doi.org/10.3390/s20102820 - 15 May 2020
Cited by 58 | Viewed by 8470
Abstract
Piezoelectric sensors with high performance and low-to-zero power consumption meet the growing demand in the flexible microelectronic system with small size and low power consumption, which are promising in robotics and prosthetics, wearable devices and electronic skin. In this review, the development process, [...] Read more.
Piezoelectric sensors with high performance and low-to-zero power consumption meet the growing demand in the flexible microelectronic system with small size and low power consumption, which are promising in robotics and prosthetics, wearable devices and electronic skin. In this review, the development process, application scenarios and typical cases are discussed. In addition, several strategies to improve the performance of piezoelectric sensors are summed up: (1) material innovation: from piezoelectric semiconductor materials, inorganic piezoceramic materials, organic piezoelectric polymer, nanocomposite materials, to emerging and promising molecular ferroelectric materials. (2) designing microstructures on the surface of the piezoelectric materials to enlarge the contact area of piezoelectric materials under the applied force. (3) addition of dopants such as chemical elements and graphene in conventional piezoelectric materials. (4) developing piezoelectric transistors based on piezotronic effect. In addition, the principle, advantages, disadvantages and challenges of every strategy are discussed. Apart from that, the prospects and directions of piezoelectric sensors are predicted. In the future, the electronic sensors need to be embedded in the microelectronic systems to play the full part. Therefore, a strategy based on peripheral circuits to improve the performance of piezoelectric sensors is proposed in the final part of this review. Full article
(This article belongs to the Section Electronic Sensors)
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12 pages, 4410 KiB  
Article
A Novel Effect of CO2 Laser Induced Piezoelectricity in Ag2Ga2SiS6 Chalcogenide Crystals
by Oleg V. Parasyuk, Galyna L. Myronchuk, Anatolij O. Fedorchuk, Ahmed M. El-Naggar, Abdullah Albassam, Andrii S. Krymus and Iwan V. Kityk
Crystals 2016, 6(9), 107; https://doi.org/10.3390/cryst6090107 - 31 Aug 2016
Cited by 6 | Viewed by 4557
Abstract
We have discovered a substantial enhancement of the piezoelectric coefficients (from 10 to 78 pm/V) in the chalcogenide Ag2Ga2SiS6 single crystals. The piezoelectric studies were done under the influence of a CO2 laser (wavelength 10.6 μm, time [...] Read more.
We have discovered a substantial enhancement of the piezoelectric coefficients (from 10 to 78 pm/V) in the chalcogenide Ag2Ga2SiS6 single crystals. The piezoelectric studies were done under the influence of a CO2 laser (wavelength 10.6 μm, time duration 200 ns, lasers with power densities varying up to 700 MW/cm2). Contrary to the earlier studies where the photoinduced piezoelectricity was done under the influence of the near IR lasers, the effect is higher by at least one order, which is a consequence of the phonon anharmonic contributions and photopolarizations. Such a discovery allows one to build infrared piezotronic devices, which may be used for the production of the IR laser tunable optoelectronic triggers and memories. This is additionally confirmed by the fact that analogous photoillumination by the near IR laser (Nd:YAG (1064 nm) and Er:glass laser (1540 nm)) gives the obtained values of the effective piezoelectricity at of least one order less. The effect is completely reversible with a relaxation time up to several milliseconds. In order to clarify the role of free carriers, additional studies of photoelectrical spectra were done. Full article
(This article belongs to the Special Issue Crystal Growth for Optoelectronic and Piezoelectric Applications)
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27 pages, 3602 KiB  
Review
Piezotronic Effect: An Emerging Mechanism for Sensing Applications
by Kory Jenkins, Vu Nguyen, Ren Zhu and Rusen Yang
Sensors 2015, 15(9), 22914-22940; https://doi.org/10.3390/s150922914 - 11 Sep 2015
Cited by 70 | Viewed by 10692
Abstract
Strain-induced polarization charges in a piezoelectric semiconductor effectively modulate the band structure near the interface and charge carrier transport. Fundamental investigation of the piezotronic effect has attracted broad interest, and various sensing applications have been demonstrated. This brief review discusses the fundamentals of [...] Read more.
Strain-induced polarization charges in a piezoelectric semiconductor effectively modulate the band structure near the interface and charge carrier transport. Fundamental investigation of the piezotronic effect has attracted broad interest, and various sensing applications have been demonstrated. This brief review discusses the fundamentals of the piezotronic effect, followed by a review highlighting important applications for strain sensors, pressure sensors, chemical sensors, photodetectors, humidity sensors and temperature sensors. Finally, the review offers some perspectives and outlook for this new field of multi-functional sensing enabled by the piezotronic effect. Full article
(This article belongs to the Section Physical Sensors)
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