Search Results (656)

Nanohybrids consisting of quantum dots and graphene (QD/graphene) provides a unique scheme to design quantum sensors. The quantum confinement in QDs enables spectral tunability, while that in graphene provides superior photocarrier mobility. The combination of them allows for broadband light absorption and high photoconduction gain that in turn leads to high photoresponsivity in QD/Gr nanohybrid photodetectors. Since the first QD/graphene photodetector was reported in 2012, intensive research has been conducted on this topic. In this paper, a review of the recent progress made on QD/Gr nanohybrid photodetectors will be provided. Among many applications, there will be a particular focus on broadband and flexible photodetectors, which make use of the inherent advantages of the QD/Gr nanohybrids. The remaining challenges and future perspectives will be discussed in this emerging topic area. Full article

Near-infrared (NIR) photodetectors are essential for LiDAR, optical communication, and sensing technologies requiring fast response and low power consumption. This work reports a PN photodiode incorporating a co-sputtered MoS₂–Al₂O₃ composite layer to enhance NIR photoresponse for LiDAR and environmental sensing applications. The composite layer improves device performance through defect passivation, dielectric screening, and modified carrier transport behavior. Under 100 mW·cm⁻² illumination at 4 V, the device delivers a photocurrent of 10 mA with a response time of 155 µs, corresponding to an approximately threefold (~300%) improvement compared to a reference structure. Spectral measurements show peak responsivity at 970 nm with extended sensitivity up to 1100 nm. These results indicate that embedding Al₂O₃ within the MoS₂ improves the MoS₂/Si interface and facilitates infrared photon absorption in the Si substrate, leading to enhanced vertical carrier collection and reduced recombination compared with conventional surface-passivated MoS₂/dielectric layers-based devices. The proposed device demonstrates a low-cost, broadband photodiode architecture suitable for eye-safe LiDAR and environmental monitoring applications. Full article

A vertical Ni/β-Ga₂O₃ Schottky barrier diode was fabricated on an unintentionally doped bulk (−201)-oriented β-Ga₂O₃ single crystal and investigated with a focus on the underlying photoresponse mechanisms. The device exhibits well-defined rectifying behavior, characterized by a Schottky barrier height of 1.63 eV, an ideality factor of 1.39, and a high rectification ratio of ~9.7 × 10⁶ arb. un. at an applied bias of ±2 V. The structures demonstrate pronounced sensitivity to deep-ultraviolet radiation (λ ≤ 280 nm), with maximum responsivity observed at 255 nm, consistent with the wide bandgap of β-Ga₂O₃. Under 254 nm illumination at a power density of 620 μW/cm², the device operates in a self-powered mode, generating an open-circuit voltage of 50 mV and a short-circuit current of 47 pA, confirming efficient separation of photogenerated carriers by the built-in electric field of the Schottky junction. The responsivity and detectivity of the structures increase from 0.18 to 3.87 A/W and from 9.8 × 10⁸ to 4.3 × 10¹¹ Hz^0.5cmW⁻¹, respectively, as the reverse bias rises from 0 to −45 V. The detectors exhibit high-speed performance, with rise and decay times not exceeding 29 ms and 59 ms, respectively, at an applied voltage of 10 V. The studied structures demonstrate internal gain, with the external quantum efficiency reaching 1.8 × 10³%. Full article

Based on the pressing need to develop efficient desulfurization technologies for fuel oils, this study presents a novel photoresponsive adsorbent for the removal of refractory thiophenic sulfides. Conventional hydrodesulfurization exhibits limited efficiency for such compounds, while adsorption–desorption processes often suffer from high energy consumption during regeneration. Inspired by natural stimuli-responsive systems, we designed a photothermal adsorbent by incorporating silver nanoparticles (Ag NPs) into a porous aromatic framework (PAF) via a green photoreduction method. The resulting materials, denoted as Ag(0)PBPAF-n (n = 1, 2, 3), were thoroughly characterized to confirm successful synthesis and structural integrity. The introduced Ag NPs serve as adsorption sites, enhancing uptake capacity through weak interactions with sulfur atoms in thiophenic molecules. More significantly, under light irradiation, the localized surface plasmon resonance (LSPR) of Ag NPs enables efficient photothermal conversion, triggering rapid desorption without conventional heating. Adsorption–desorption tests demonstrated that up to 48% of adsorbed thiophenic sulfur could be released upon illumination. Fixed-bed experiments further verified that light can effectively stimulate regeneration and improve energy efficiency. This work offers a promising strategy for designing recyclable adsorbents with low-energy regeneration driven by clean solar energy. Full article

Tin selenide (SnSe) is a sustainable, lead-free IV–VI semiconductor whose layered orthorhombic crystal structure induces pronounced electronic and phononic anisotropy, enabling diverse energy-related functionalities. This review systematically summarizes recent progress in understanding the structure–property–processing relationships that govern SnSe performance in thermoelectric and optoelectronic applications. Key crystallographic characteristics are first discussed, including the temperature-driven Pnma–Cmcm phase transition, anisotropic band and valley structures, and phonon transport mechanisms that lead to intrinsically low lattice thermal conductivity below 0.5 W m⁻¹ K⁻¹ and tunable carrier transport. Subsequently, major synthesis strategies are critically compared, spanning Bridgman and vertical-gradient single-crystal growth, spark plasma sintering and hot pressing of polycrystals, as well as vapor- and solution-based thin-film fabrication, with emphasis on process windows, stoichiometry control, defect chemistry, and microstructure engineering. For thermoelectric applications, directional and temperature-dependent transport behaviors are analyzed, highlighting record thermoelectric performance in single-crystal SnSe at hi. We analyze directional and temperature-dependent transport, highlighting record thermoelectric figure of merit values exceeding 2.6 along the b-axis in single-crystal SnSe at ~900 K, as well as recent progress in polycrystalline and thin-film systems through alkali/coinage-metal doping (Ag, Na, Cu), isovalent and heterovalent substitution (Zn, S), and hierarchical microstructural design. For optoelectronic applications, optical properties, carrier dynamics, and photoresponse characteristics are summarized, underscoring high absorption coefficients exceeding 10⁴ cm⁻¹ and bandgap tunability across the visible to near-infrared range, together with interface engineering strategies for thin-film photovoltaics and broadband photodetectors. Emerging applications beyond energy conversion, including phase-change memory and electrochemical energy storage, are also reviewed. Finally, key challenges related to selenium volatility, performance reproducibility, long-term stability, and scalable manufacturing are identified. Overall, this review provides a process-oriented and application-driven framework to guide the rational design, synthesis optimization, and device integration of SnSe-based materials. Full article

This study investigates the synthesis and photochemical behavior of a series of (E)-1-aryl-1,3-butadienes with different aromatic substituents. Despite their simple structure and straightforward preparation, detailed studies of their photochemical properties, especially UV light-induced (E) to (Z) isomerization, are scarce. Our results demonstrate that these compounds can efficiently undergo photo-triggered geometric changes, highlighting their potential as functional units in photochemical applications. The findings underline the significance of extended conjugation in managing excited-state processes, providing new insights into the dynamics of photoinduced transformations in conjugated diene systems. Additional computational analyses show how geometric modifications influence conformational energies in the synthesized compounds. Overall, these results improve understanding of structure–reactivity relationships and lay the foundation for designing photoresponsive materials based on (E) and (Z)-1-aryl-1,3-butadiene frameworks, with promising applications in photochemistry and materials science. Full article

Two-dimensional (2D) materials demonstrate significant potential in photodetector technology. They offer high sensitivity, wide spectral range, flexibility and transparency, especially in infrared detection, promising advancements in wearable and flexible electronics. This study explores the application of 2D materials in high-performance photodetectors. Rhenium diselenide (ReSe₂) was used as the channel, and graphene (Gr) was inserted between ReSe₂ and SiO₂ as the gate electrode to enhance device performance. A ReSe₂/Gr heterostructure field-effect transistor (FET) was fabricated to investigate the role of Gr in improving the optoelectronic properties of ReSe₂ phototransistors. Specifically, the ReSe₂ FET without Gr auxiliary layer demonstrates a responsivity (R) of 294 mA/W, an external quantum efficiency (EQE) of 68.75%, and response times as brief as 40/62 ms. Compared with the ReSe₂ phototransistor, the ReSe₂/Gr phototransistor exhibits significantly improved photoresponsivity and EQE, with the photoresponsivity enhanced by a factor of ap-proximately 3.58 and the EQE enhanced by a factor of approximately 3.59. These enhancements are mainly attributed to optimization of interfacial band alignment and the strengthened photogating effect by Gr auxiliary layer. This research not only underscores the pivotal role of Gr in boosting the capabilities of 2D photodetectors but also offers a viable strategy for developing high-performance photodetectors with 2D materials. Full article

Azobenzene-based hologram recording materials are well known for their rewritable and polarization-selective properties that enable polarization-multiplexed recording and high-density optical storage. High diffraction efficiency, longer retention time, and shorter response time are desirable for rewritable recording materials, but they always require a trade-off relationship. In this study, we show that by simply coating the Azobenzene-based film with multiple layers of a suitable material, these parameters can be improved simultaneously without compromise. Bilayer films and triple layer films were prepared by depositing a DNA–surfactant complex-based layer above and below the azobenzene-based poly(CACzE-MMA) copolymer layer. The hologram recording performance was evaluated in terms of the diffraction efficiency, photoresponse time, and retention behavior of the recorded gratings. Compared with monolayer copolymer films, the multilayer DNA–surfactant complex-based copolymer films exhibited enhanced diffraction efficiency and faster photoresponse. In particular, the bilayer and trilayer structures showed a marked improvement in retention time, indicating suppressed relaxation of refractive index modulation. This enhancement is attributed to molecular confinement at the DNA–surfactant complex and copolymer interfaces generated by the layered architecture. These results demonstrate that a DNA–surfactant complex-based layering approach is an effective strategy for improving hologram stability and highlight the potential of DNA–surfactant complex-derived matrices as effective alternatives to poly(methyl methacrylate) (PMMA) in holographic applications. Full article

This review critically examines photoresponsive supercapacitors based on TiO₂/graphene hybrids, with a particular focus on their emerging dual role as energy-storage devices and environmental sensors. We first provide a concise overview of the electronic structure of TiO₂ and the key attributes of graphene and related nanocarbons that enable efficient charge separation, transport, and interfacial engineering. We then summarize and compare reported device architectures and electrode designs, highlighting how morphology, graphene integration strategies, and illumination conditions govern specific capacitance, cycling stability, rate capability, and light-induced enhancement in performance. Particular attention is given to the underlying mechanisms of photo-induced capacitance enhancement—including photocarrier generation, interfacial polarization, and photodoping—and to how these processes can be exploited to embed sensing functionality in working supercapacitors. We review representative studies in which TiO₂/graphene systems operate as capacitive sensors for humidity, gases, and volatile organic compounds, emphasizing quantitative figures of merit such as sensitivity, response/recovery times, and stability under repeated cycling. Finally, we outline current challenges in materials integration, device reliability, and benchmarking, and propose future research directions toward scalable, multifunctional TiO₂/graphene platforms for self-powered and environmentally aware electronics. This work is intended as a state-of-the-art summary and critical guide for researchers developing next-generation photoresponsive supercapacitors with integrated sensing capability. Full article

TiO₂ Nanospheres with a large surface area were synthesized via a hydrothermal reaction using titanium glycolate. The samples were subsequently subjected to different vacuum oven treatment times (2, 4, 6, and 8 h), resulting in Ti³⁺ self-doping. Comprehensive characterization was performed using transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The synthesized TiO₂ Nanospheres exhibited significantly enhanced photocurrent and efficient photocatalytic activity under visible light irradiation, demonstrating their potential for applications in solar-driven water splitting. The results highlight the influence of Ti³⁺ self-doping on improving the photoactivity and photosensitivity of the material. Full article

Wide-bandgap diamond photodetectors face a fundamental trade-off between dark current suppression and photocurrent collection due to high Schottky barriers. Here, a photo-modulation strategy is demonstrated by integrating monolayer graphene as transparent electrodes on oxygen-terminated single-crystal diamond. The atomically thin graphene (87.3% UV transmittance at 220 nm) allows photons to penetrate and dynamically reduce Schottky barriers through photoinduced electric fields, while maintaining high barriers (~2.3 eV) under dark conditions for ultralow leakage current. Compared with conventional 100 nm Au electrodes, graphene-based devices exhibit a 4.9-fold responsivity improvement (0.158 A/W at 220 nm) and a 5.2-fold detectivity increase (8.35 × 10¹³ cm·Hz^1/2/W), while preserving ultralow dark current (~10⁻¹² A at ±100 V). XPS measurements confirm a minimal Fermi level shift (0.06 eV) upon graphene integration, demonstrating robust surface state pinning by oxygen termination. Transient photoresponse reveals a 27% faster rise time (30 ns vs. 41 ns) with bi-exponential decay governed by band-to-band recombination (τ1 ≈ 75 ns) and trap-assisted recombination (τ2 ≈ 411 ns). The devices maintain stable performance after one month of ambient exposure and successfully demonstrate UV optical communication capability. This transparent electrode approach offers a versatile strategy for enhancing wide-bandgap semiconductor photodetectors for secure communications, environmental monitoring, and industrial sensing applications. Full article

Photo-response non-uniformity (PRNU) has long been regarded as a reliable method for source camera identification and device linking in forensic applications. Recent advances in deep learning (DL) have introduced diverse architectures, including convolutional neural networks, residual learning, encoder–decoder representations, dual-branch structures, and contrastive learning, to capture specific sensor artifacts. This review summarizes the performance of these DL techniques across both tasks and compares their effectiveness at the model and device levels over time. While DL approaches achieve strong model-level accuracy, robust device-level identification remains challenging, particularly in modern imaging pipelines that involve camera-integrated or AI-driven enhancements during capture. These findings underscore the need for improved techniques and updated datasets to address evolving photograph capture practices. Full article

Rapid progress on the fabrication of lead halide perovskite has led to the development of high performance optoelectronic devices, particularly in the field of solar cell technologies. This initial success has subsequently inspired investigations into layered 2D-halide perovskite structures, motivated in part by their good environmental stability, but more significantly by their intriguing fundamental photo-physics. They have recently been used to improve the photoresponsivity of monolayer transition metal dichalcogenides in hybrid heterostructures. In this paper, we report on the synthesis of the (PEA)₂(MA)_n−1Pb_nI_3n+1 series (with n = 1, 2, 3) of 2D-halide perovskites, in order to develop a platform that provides ultra-thin layers for the fabrication of hybrid heterostructures. The crystal synthesis method and its basic structural and optical characterization are shown, highlighting the differences in the crystal synthesis processes. Furthermore, we explore the preparation of 2D halide perovskite ultra-thin flakes using the mechanical exfoliation method, and few-layer-areas of n = 1 member of the series are identified using atomic force microscopy. Finally, we study the deposition of thin and ultra-thin films using the spin coating technique to provide an alternative process to the exfoliation. Full article

In recent years, indium-oxide thin-film transistors (IOTFTs) have been developed with high electron mobility, low power consumption, and good environmental stability. A major challenge in current IOTFTs research lies in developing high-performance devices through low-temperature processes while simultaneously expanding their functionality into photonic applications. Our study proposes a low-temperature annealing method for high-performance IOTFTs fabrication, combining substrate heating and a multi-stage annealing process. The optimized device exhibits a device mobility of 47.99 cm²/V·s, a threshold voltage of 2.8 V, a subthreshold swing (SS) of 742.83 mV/dec, and good stability under bias stress tests. Building upon the IOTFTs, we extend the functionality to photonic applications by integrating poly[[2,3,5,6-tetrahydro-2,5-bis(2-octyldodecyl)-3,6-dioxopyrrolo[3,4-c]pyrrole-1,4-diyl]-2,5-thiophenediylthieno[3,2-b]thiophene-2,5-diyl-2,5-thiophenediyl] (DPPDTT) photoresponsive layer, achieving a phototransistor with responsivity of 3.7 A/W and detectivity of 5.86 × 10¹¹ Jones at 850 nm near-infrared light. This work provides a new approach for fabricating high-performance indium-oxide thin-film transistors and phototransistors with low-temperature annealing. Full article

A compact LED (light emission diode)-based illumination unit controlled by a microcontroller was developed for recombination-type silicon sensor structures. The system employs an 8 × 8 LED matrix that provides programmable spatial excitation patterns across a 2.2 × 2.2 mm sensor surface. Its operation is based on changes in the silicon surface recombination properties upon analyte interaction, producing photocurrent variations of 10–50 nA depending on the dipole moment. Compared with conventional laser-based systems, the proposed LED illumination significantly reduces cost, complexity, and power consumption while maintaining sufficient optical intensity for reliable photoresponse detection. The embedded controller enables precise timing, synchronization with the photocurrent acquisition unit, and flexible adaptation for various biological fluid analyses. This implementation demonstrates a scalable and cost-efficient alternative to stationary LBIC setups and supports integration into portable or IoT-compatible diagnostic systems. For comparative screening, the LED array was used instead of the focused laser beam typically employed in LBIC (laser beam-induced current) measurements. This paper substantially reduced the peak optical intensity at the sample surface, minimizing local thermal heating critical for enzyme-based or plasma samples sensitive to temperature fluctuations. Photocurrent mapping reveals charge-state modification of recombination centers at the SiOx/Si interface under optical excitation. Further optimization is expected for compact or simplified configurations, particularly those aimed at portable applications and automated physiological monitoring systems. Full article