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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Engineered PN MoS2–Al2O3-Based Photodiode Device for High-Performance NIR LiDAR and Sensing Applications

by
Ahmed Abdelhady A. Khalil
1,2,†,
Abdallah M. Karmalawi
3,†,
Moamen R. A. Elsayed
3,
Ramy El-Bashar
1,
Hamdy Abdelhamid
4,5,*,
Heba A. Shawkey
6,
S. S. A. Obayya
7,8,* and
Mohamed Farhat O. Hameed
2,8
1
National Institute of Laser Enhanced Sciences (NILES), Cairo University, Giza 12613, Egypt
2
Center for Nanotechnology, Zewail City of Science, Technology and Innovation, October Gardens, 6th of October City, Giza 12578, Egypt
3
Radiometry Metrology Laboratory, Division of Photometry and Radiometry, National Institute of Standards (NIS), President Sadat St., 136, Al-Haram, Giza 12211, Egypt
4
Electrical Engineering Department, College of Engineering and Information Technology, Ajman University, Ajman P.O. Box 346, United Arab Emirates
5
Centre for Nanoelectronics and Devices (CND), Zewail City of Science, Technology and Innovation, October Gardens, 6th of October City, Giza 12578, Egypt
6
Microelectronics Department, Electronics Research Institute (ERI), Cairo 12622, Egypt
7
Centre for Photonics and Smart Materials, Zewail City of Science, Technology and Innovation, October Gardens, 6th of October City, Giza 12578, Egypt
8
Faculty of Engineering, University of Mansoura, Mansoura 35516, Egypt
*
Authors to whom correspondence should be addressed.
†
These authors contributed equally to this work.
Sensors 2026, 26(2), 542; https://doi.org/10.3390/s26020542
Submission received: 20 November 2025 / Revised: 22 December 2025 / Accepted: 5 January 2026 / Published: 13 January 2026
(This article belongs to the Section Optical Sensors)
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Abstract

Near-infrared (NIR) photodetectors are essential for LiDAR, optical communication, and sensing technologies requiring fast response and low power consumption. This work reports a PN photodiode incorporating a co-sputtered MoS2–Al2O3 composite layer to enhance NIR photoresponse for LiDAR and environmental sensing applications. The composite layer improves device performance through defect passivation, dielectric screening, and modified carrier transport behavior. Under 100 mW·cm−2 illumination at 4 V, the device delivers a photocurrent of 10 mA with a response time of 155 µs, corresponding to an approximately threefold (~300%) improvement compared to a reference structure. Spectral measurements show peak responsivity at 970 nm with extended sensitivity up to 1100 nm. These results indicate that embedding Al2O3 within the MoS2 improves the MoS2/Si interface and facilitates infrared photon absorption in the Si substrate, leading to enhanced vertical carrier collection and reduced recombination compared with conventional surface-passivated MoS2/dielectric layers-based devices. The proposed device demonstrates a low-cost, broadband photodiode architecture suitable for eye-safe LiDAR and environmental monitoring applications.
Keywords: photodetector; PN photodiode; MoS2–Al2O3 photodiode; light harvesting device; photodetector performance parameters; metrology photodetector; PN photodiode; MoS2–Al2O3 photodiode; light harvesting device; photodetector performance parameters; metrology
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MDPI and ACS Style

Abdelhady A. Khalil, A.; M. Karmalawi, A.; R. A. Elsayed, M.; El-Bashar, R.; Abdelhamid, H.; A. Shawkey, H.; S. A. Obayya, S.; Farhat O. Hameed, M. Engineered PN MoS2–Al2O3-Based Photodiode Device for High-Performance NIR LiDAR and Sensing Applications. Sensors 2026, 26, 542. https://doi.org/10.3390/s26020542

AMA Style

Abdelhady A. Khalil A, M. Karmalawi A, R. A. Elsayed M, El-Bashar R, Abdelhamid H, A. Shawkey H, S. A. Obayya S, Farhat O. Hameed M. Engineered PN MoS2–Al2O3-Based Photodiode Device for High-Performance NIR LiDAR and Sensing Applications. Sensors. 2026; 26(2):542. https://doi.org/10.3390/s26020542

Chicago/Turabian Style

Abdelhady A. Khalil, Ahmed, Abdallah M. Karmalawi, Moamen R. A. Elsayed, Ramy El-Bashar, Hamdy Abdelhamid, Heba A. Shawkey, S. S. A. Obayya, and Mohamed Farhat O. Hameed. 2026. "Engineered PN MoS2–Al2O3-Based Photodiode Device for High-Performance NIR LiDAR and Sensing Applications" Sensors 26, no. 2: 542. https://doi.org/10.3390/s26020542

APA Style

Abdelhady A. Khalil, A., M. Karmalawi, A., R. A. Elsayed, M., El-Bashar, R., Abdelhamid, H., A. Shawkey, H., S. A. Obayya, S., & Farhat O. Hameed, M. (2026). Engineered PN MoS2–Al2O3-Based Photodiode Device for High-Performance NIR LiDAR and Sensing Applications. Sensors, 26(2), 542. https://doi.org/10.3390/s26020542

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