Search Results (282)

Constructing heterojunctions can combine the superior performance of different two-dimensional (2D) materials and eliminate the drawbacks of a single material, and modulating heterojunctions can enhance the capability and extend the application field. Here, we investigate the physical properties of the heterojunctions formed by the contact of different atom planes of Janus MoSSe (JMoSSe) and graphene (Gr), and regulate the Schottky barrier of the Gr/JMoSSe heterojunction by the number of layers and the electric field. Due to the difference in atomic electronegativity and surface work function (WF), the Gr/JSMoSe heterojunction formed by the contact of S atoms with Gr exhibits an n-type Schottky barrier, whereas the Gr/JSeMoS heterojunction formed by the contact of the Se atoms with Gr reveals a p-type Schottky barrier. Increasing the number of layers of JMoSSe allows the Gr/JMoSSe heterojunction to achieve the transition from Schottky contact to Ohmic contact. Moreover, under the control of an external electric field, the Gr/JMoSSe heterojunction can realize the transition among n-type Schottky barrier, p-type Schottky barrier, and Ohmic contact. The physical mechanism of the layer number and electric field modulation effect is analyzed in detail by the change in the interface electron charge transfer. Our results will contribute to the design and application of nanoelectronics and optoelectronic devices based on Gr/JMoSSe heterojunctions in the future. Full article

Oblique angle deposition (OAD) holds significant potential for diverse applications, including energy harvesting devices, optoelectronic sensors, and electronic devices, owing to the creation of unique nanostructures. These nanostructures are characterized by their porosity and nanoscale columns, which can exist in numerous forms depending on deposition conditions. As a result, the engineering of nanostructures using OAD achieves the successful modulation of optical properties such as absorption, reflection, and transmission. This explains the current surge of attention toward photodetectors based on OAD technology. This review presents various photodetectors based on OAD technology and summarizes reported cases. It also explores current advancements, major applications, and future directions in photodetector development and nanostructure engineering. Ultimately, this review aims to provide a comprehensive overview of the research trends in photodetectors utilizing OAD technology and focus on their further development and application potential. Full article

In this study, three alternating donor–acceptor (D–A) type [12]cycloparaphenylene ([12]CPP) derivatives ([12]CPP 1a, 2a, and 3a) were designed through precise molecular engineering, and their multidimensional photophysical responses and chiroptical properties were systematically investigated. The effects of the alternating D–A architecture on electronic structure, excited-state dynamics, and optical behavior were elucidated through density functional theory (DFT) and time-dependent DFT (TD-DFT) calculations. The results show that the alternating D–A design significantly reduced the HOMO–LUMO energy gap (e.g., 3.11 eV for [12]CPP 2a), enhanced charge transfer characteristics, and induced pronounced red-shifted absorption. The introduction of an imide-based acceptor ([12]CPP 2a) further strengthened the electron push-pull interaction, exhibiting superior performance in two-photon absorption, while the symmetrically multifunctionalized structure ([12]CPP 3a) predominantly exhibited localized excitation with the highest absorption intensity but lacked charge transfer features. Chiral analysis reveals that the alternating D–A architecture modulated the distribution of chiral signals, with [12]CPP 1a displaying a strong Cotton effect in the low-wavelength region. These findings not only provide a theoretical basis for the molecular design of functionalized CPP derivatives, but also lay a solid theoretical foundation for expanding their application potential in optoelectronic devices and chiral functional materials. Full article

Enhancing light absorption in two-dimensional (2D) materials, particularly few-layer structures, is critical for advancing optoelectronic devices such as light sources, photodetectors, and sensors. However, conventional absorption enhancement strategies often suffer from unstable resonant wavelengths and low-quality factors (Q-factors) due to the inherent weak light–matter interactions in 2D materials. To address these limitations, we propose an all-dielectric metasurface graphene-perfect absorber based on toroidal dipole bound state in the continuum (TD-BIC) with an ultra-narrow bandwidth and stable resonant wavelength. The proposed structure achieves tunable absorption linewidths spanning three orders of magnitude (6 nm to 0.0076 nm) through critical coupling modulation. Furthermore, the operational wavelength can be flexibly extended to any near-infrared region by adjusting the grating width. This work establishes a novel paradigm for enhancing the absorption of 2D materials in photonic device applications. Full article

Nonlinear characteristics are essential for neuromorphic devices to process high-dimensional and unstructured data. However, enabling a device to realize a nonlinear response under the same stimulation condition is challenging as this involves two opposing processes: simultaneous charge accumulation and recombination. In this study, a hybrid transistor based on a mixed-halide perovskite was fabricated to achieve dynamic nonlinear changes in synaptic plasticity. The utilization of a light-induced mixed-bandgap structure within the mixed perovskite film has been demonstrated to increase the recombination paths of photogenerated carriers of the hybrid film, thereby promoting the formation of nonlinear signals in the device. The constructed heterojunction optoelectronic synaptic transistor, formed by combining a mixed-halide perovskite with a p-type semiconductor, generates dynamic nonlinear decay responses under 400 nm light pulses with an intensity as low as 0.02 mW/cm². Furthermore, it has been demonstrated that nonlinear photocurrent growth can be achieved under 650 nm light pulses. It is important to note that this novel nonlinear response is characterized by its dynamism. These improvements provide a novel method for expanding the modulation capability of optoelectronic synaptic devices for synaptic plasticity. Full article

Group IV element-based topological semimetals (TSMs) are pivotal for next-generation quantum devices due to their ultra-high carrier mobility and low-energy consumption. However, germanium (Ge)-based TSMs remain underexplored despite their compatibility with existing semiconductor technologies. Here, we propose a novel I229-Ge₄₈ allotrope constructed via bottom-up cluster assembly that exhibits a unique porous spherical Fermi surface and strain-tunable topological robustness. First-principles calculations reveal that I229-Ge₄₈ is a topological nodal line semimetal with exceptional mechanical anisotropy (Young’s modulus ratio: 2.27) and ductility (B/G = 2.21, ν = 0.30). Remarkably, the topological property persists under spin-orbit coupling (SOC) and tensile strain, while compressive strain induces a semiconductor transition (bandgap: 0.29 eV). Furthermore, I229-Ge₄₈ demonstrates strong visible-light absorption (10⁵ cm⁻¹) and a strong strain-modulated infrared response, surpassing conventional Ge allotropes. These findings establish I229-Ge₄₈ as a multifunctional platform for strain-engineered nanoelectronics and optoelectronic devices. Full article

This paper investigates strain-, twist-, and electric-field-tuned optical absorption in bilayer MoS₂, emphasizing spin-orbit coupling (SOC). A continuum model reveals competing mechanisms: geometric perturbations (strain/twist) and Stark effects govern one-/two-photon absorption, with critical thresholds (~9% strain, ~2.13° twist) switching spin-independent to spin-polarized regimes. Strain gradients and twist enhance nonlinear responses through symmetry-breaking effects while electric fields dynamically modulate absorption via band alignment tuning. By linking parameter configurations to absorption characteristics, this work provides a framework for designing tunable spin-resolved optoelectronic devices and advancing light–matter control in 2D materials. Full article

There is considerable interest in broadband nanomaterials, particularly transparent semiconductor oxides, within both fundamental research and technological applications. Historically, it has been considered that the variation in dopant concentration during the synthesis of semiconductor materials is a crucial factor in activating and/or modulating the optical and structural properties, particularly the bandgap and the parameters of the unit cell, of semiconductor oxides. Recently, tin oxide has emerged as a key material due to its excellent structural properties, optical transparency, and various promising applications in optoelectronics. This study utilized the ultrasonic spray pyrolysis technique to synthesize aluminum-doped tin oxide (ATO) thin films on quartz and polished single-crystal silicon substrates. The impact of varying aluminum doping levels (0, 2, 5, and 10 at. %) on morphology and structural and optical properties was examined. The ATO thin films were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmittance spectroscopy. SEM images demonstrated a slight reduction in the size of ATO nanoparticles as the aluminum doping concentration increased. XRD analysis revealed a tetragonal crystalline structure with the space group P42/mnm, and a shift in the XRD peaks to higher angles was noted with increasing aluminum content, indicating a decrease in the crystalline lattice parameters of ATO. The transmittance of the ATO films varied between 75% and 85%. By employing the transmittance spectra and the established Tauc formula the optical bandgap values of ATO films were calculated, showing an increase in the bandgap with higher doping levels. These findings were thoroughly analyzed and discussed; additionally, an effort was made to clarify the contradictory analyses present in the literature and to identify a doping range that avoids the onset of a secondary phase. Full article

Gallium oxide (Ga₂O₃), as a wide-bandgap semiconductor material, is highly expected to find extensive applications in optoelectronic devices, high-power electronics, gas sensors, etc. However, the photoelectric properties of Ga₂O₃ still need to be improved before its devices become commercially viable. As is well known, doping is an effective method to modulate the various properties of semiconductor materials. In this study, Zn–N co-doped Ga₂O₃ films with various doping concentrations were grown in situ on sapphire substrates by atomic layer deposition (ALD) at 250 °C, followed by post-annealing at 900 °C. The post-annealed undoped Ga₂O₃ film showed a highly preferential orientation, whereas with the increase in Zn doping concentration, the preferential orientation of Ga₂O₃ films was deteriorated, turning it into an amorphous state. The surface roughness of the Ga₂O₃ thin films is largely affected by doping. As a result of post-annealing, the bandgaps of the Ga₂O₃ films can be modulated from 4.69 eV to 5.41 eV by controlling the Zn–N co-doping concentrations. When deposited under optimum conditions, high-quality Zn–N co-doped Ga₂O₃ films showed higher transmittance, a larger bandgap, and fewer defects compared with undoped ones. Full article

Titanium dioxide (TiO₂) is a wide-bandgap semiconductor material with broad application potential, known for its excellent photocatalytic performance, high chemical stability, low cost, and non-toxicity. These properties make it highly attractive for applications in photovoltaic energy, environmental remediation, and optoelectronic devices. For instance, TiO₂ is widely used as a photocatalyst for hydrogen production via water splitting and for degrading organic pollutants, thanks to its efficient photo-generated electron–hole separation. Additionally, TiO₂ exhibits remarkable performance in dye-sensitized solar cells and photodetectors, providing critical support for advancements in green energy and photoelectric conversion technologies. Boron-doped diamond (BDD) is renowned for its exceptional electrical conductivity, high hardness, wide electrochemical window, and outstanding chemical inertness. These unique characteristics enable its extensive use in fields such as electrochemical analysis, electrocatalysis, sensors, and biomedicine. For example, BDD electrodes exhibit high sensitivity and stability in detecting trace chemicals and pollutants, while also demonstrating excellent performance in electrocatalytic water splitting and industrial wastewater treatment. Its chemical stability and biocompatibility make it an ideal material for biosensors and implantable devices. Research indicates that the combination of TiO₂ nanostructures and BDD into heterostructures can exhibit unexpected optical and electrical performance and transport behavior, opening up new possibilities for photoluminescence and rectifier diode devices. However, applications based on this heterostructure still face challenges, particularly in terms of photodetector, photoelectric emitter, optical modulator, and optical fiber devices under high-temperature conditions. This article explores the potential and prospects of their combined heterostructures in the field of optoelectronic devices such as photodetector, light emitting diode (LED), memory, field effect transistor (FET) and sensing. TiO₂/BDD heterojunction can enhance photoresponsivity and extend the spectral detection range which enables stability in high-temperature and harsh environments due to BDD’s thermal conductivity. This article proposes future research directions and prospects to facilitate the development of TiO₂ nanostructured materials and BDD-based heterostructures, providing a foundation for enhancing photoresponsivity and extending the spectral detection range enables stability in high-temperature and high-frequency optoelectronic devices field. Further research and exploration of optoelectronic devices based on TiO₂-BDD heterostructures hold significant importance, offering new breakthroughs and innovations for the future development of optoelectronic technology. Full article

Few-layer black phosphorus (BP) holds significant potential for next-generation electronics due to its tunable bandgap and high carrier mobility. The layer modulation of BP is essential in the applications of electronic devices ascribed to its thickness-dependent electronic properties. However, precisely controlling its thickness still presents a challenge for optimizing performance. In this study, we demonstrate that BP can be precisely thinned when exposed to dry oxygen (40% humidity, low oxygen concentration) in a dark environment, which is different from that exposed to humid oxygen (100% humidity, low oxygen concentration) without light illumination. The thinned BP not only demonstrates enhanced stability but also exhibits significant improvements in its electrical properties. The variation in bandgap from 0.3 to 2 eV, resulting in the I_ON/I_OFF ratio increased from 10³ to 10⁶, and the hole mobility improved from 235 cm² V⁻¹ s⁻¹ to 851 cm² V⁻¹ s⁻¹, was ascribed to the layer-by-layer thinning and p-type doping effects induced by the formed P_xO_y. Our finding demonstrates significant potential of BP in future nanoelectronic and optoelectronic applications. Full article

Nanomaterials with large specific surface area (SSA) have emerged as pivotal platforms for energy storage and environmental remediation, primarily due to their enhanced active site exposure, improved mass transport capabilities, and superior interfacial reactivity. Among them, polymeric carbon nitride (g-C₃N₄) has garnered significant attention in energy and environmental applications owing to its visible-light-responsive bandgap (~2.7 eV), exceptional thermal/chemical stability, and earth-abundant composition. However, the practical performance of g-C₃N₄ is fundamentally constrained by intrinsic limitations, including its inherently low SSA (<20 m²/g via conventional thermal polymerization), rapid recombination of photogenerated carriers, and inefficient charge transfer kinetics. Notably, the theoretical SSA of g-C₃N₄ reaches 2500 m²/g, yet achieving this value remains challenging due to strong interlayer van der Waals interactions and structural collapse during synthesis. Recent advances demonstrate that state-of-the-art strategies can elevate its SSA to 50–200 m²/g. To break this surface area barrier, advanced strategies achieve SSA enhancement through three primary pathways: pre-treatment (molecular and supramolecular precursor design), in process (templating and controlled polycondensation), and post-processing (chemical exfoliation and defect engineering). This review systematically examines controllable synthesis methodologies for high-SSA g-C₃N₄, analyzing how SSA amplification intrinsically modulates band structures, extends carrier lifetimes, and boosts catalytic efficiencies. Future research should prioritize synergistic multi-stage engineering to approach the theoretical SSA limit (2500 m²/g) while preserving robust optoelectronic properties. Full article

The novel benzanthrone derivative, 2-bromo-3-aminobenzo[de]anthracene-7-one (2-Br-3-NH₂BA), was synthesized and extensively characterized to investigate its photophysical behavior in various solvents. It was prepared through selective bromination of 3-aminobenzanthrone using N-bromosuccinimide in dimethylformamide at −20 °C. Featuring a donor–π–acceptor (D–π–A) structure, 2-Br-3-NH₂BA exhibits pronounced solvatochromism due to the intramolecular charge transfer (ICT) between the amino donor and the carbonyl acceptor groups. Optical measurements conducted in eight solvents of varying polarity revealed a significant bathochromic shift in both absorption and fluorescence emission, with emission maxima red-shifting by over 110 nm from non-polar to polar environments. Corresponding reductions in the optical band gap energies, as calculated from Tauc plots, further support solvent-induced electronic state modulation. Additionally, quantum yield analysis showed higher fluorescence efficiency in non-polar solvents, while polar solvents induced twisted intramolecular charge transfer (TICT), leading to emission quenching. These findings demonstrate the sensitivity of 2-Br-3-NH₂BA to environmental polarity, making it a promising candidate for color-tunable luminescent applications in optoelectronics and sensing. However, further studies in the solid state are required to validate its applicability in device architectures such as OLEDs. Full article

We report the fabrication and characterization of Al-doped ZnO (AZO) optoelectronic synaptic devices based on sol–gel-derived thin films with varying Al concentrations (0~4.0 wt%). Structural and optical analyses reveal that moderate Al doping modulates the crystal orientation, optical bandgap, and defect levels of ZnO films. Notably, 2.0 wt% Al doping yields the widest bandgap (3.31 eV), stable PL emission, and uniform deep-level absorption without inducing significant lattice disorder. Synaptic performance, including learning–forgetting dynamics and persistent photoconductivity (PPC), is strongly dependent on Al concentration. The 2.0 wt% AZO device exhibits the lowest forgetting rate and longest memory retention due to optimized trap formation, particularly Al–oxygen vacancy complexes that enhance carrier lifetime. Visual memory simulations using a 3 × 3 pixel array under patterned UV illumination further confirm superior long-term memory (LTM) behavior at 2.0 wt%, with stronger excitatory postsynaptic current (EPSC) retention during repeated stimulation. These results demonstrate that precise doping control via the sol–gel method enables defect engineering in oxide-based neuromorphic devices. Our findings provide an effective strategy for designing low-cost, scalable optoelectronic synapses with tunable memory characteristics suitable for future in-sensor computing and neuromorphic vision systems. Full article

This paper presents a CMOS-based optoelectronic receiver integrated circuit (CORIC) realized in a standard 180 nm CMOS technology for the applications of short-distance optical interconnects. The CORIC comprises a spatially modulated P⁺/N-well on-chip avalanche photodiode (P⁺/NW APD) for optical-to-electrical conversion, a dummy APD at the differential input for enhanced common-mode noise rejection, a cross-coupled differential transimpedance amplifier (CCD-TIA) for current-to-voltage conversion, a 3-bit continuous-time linear equalizer (CTLE) for adaptive equalization by using NMOS registers, and a $f_T$-doubler output buffer (OB). The CTLE and $f_T$-doubler OB combination not only compensates the frequency-dependent signal loss, but also provides symmetric differential output signals. Post-layout simulations of the proposed CORIC reveal a transimpedance gain of 53.2 dBΩ, a bandwidth of 4.83 GHz even with a 490 fF parasitic capacitance from the on-chip P⁺/NW APD, a dynamic range of 60 dB that handles the input photocurrents from 1 μA_pp to 1 mA_pp, and a DC power consumption of 33.7 mW from a 1.8 V supply. The CORIC chip core occupies an area of 260 × 101 μm². Full article