Search Results (162)

Artificial photoelectric synapses exhibit great potential for overcoming the Von Neumann bottleneck in computational systems. All-inorganic halide perovskites hold considerable promise in photoelectric synapses due to their superior photon-harvesting efficiency. In this study, a novel wavy-structured CsPbBr₃/ZnO hybrid film was realized by depositing zinc oxide (ZnO) onto island-like CsPbBr₃ film via atomic layer deposition (ALD) at 70 °C. Due to the capability of ALD to grow high-quality films over small surface areas, dense and thin ZnO film filled the gaps between the island-shaped CsPbBr₃ grains, thereby enabling reduced light-absorption losses and efficient charge transport between the CsPbBr₃ light absorber and the ZnO electron-transport layer. This ZnO/island-like CsPbBr₃ hybrid synaptic transistor could operate at a drain-source voltage of 1.0 V and a gate-source voltage of 0 V triggered by green light (500 nm) pulses with low light intensities of 0.035 mW/cm². The device exhibited a quiescent current of ~0.5 nA. Notably, after patterning, it achieved a significantly reduced off-state current of 10⁻¹¹ A and decreased the quiescent current to 0.02 nA. In addition, this transistor was able to mimic fundamental synaptic behaviors, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), short-term to long-term plasticity (STP to LTP) transitions, and learning-experience behaviors. This straightforward strategy demonstrates the possibility of utilizing neuromorphic synaptic device applications under low voltage and weak light conditions. Full article

In this research work, two distinct types of three-dimensional (3D) capacitors were successfully fabricated, each with its own unique features and advantages. The first type of capacitor is centered around a 3D nanoporous structure. This structure is formed on a nickel substrate through anodic oxidation. After undergoing high-temperature thermal oxidation, a monolithic Ni-NiO-Pt metal–insulator–metal (MIM) capacitor with a nanoporous dielectric architecture is achieved. Structurally, this innovative design brings about several remarkable benefits. Due to the nanoporous structure, it has a significantly increased surface area, which can effectively store more charges. As a result, it exhibits an equivalent capacitance density of 69.95 nF/cm², which is approximately 18 times higher than that of its planar, non-porous counterpart. This high capacitance density enables it to store more electrical energy in a given volume, making it highly suitable for applications where miniaturization and high energy storage in a small space is crucial. The second type of capacitor makes use of Through-Glass Via (TGV) technology. This technology is employed to create an interdigitated blind-via array within a glass substrate, attaining an impressively high aspect ratio of 22.5:1 (with a via diameter of 20 μm and a depth of 450 μm). By integrating atomic layer deposition (ALD), a conformal interdigital electrode structure is realized. Glass, as a key material in this capacitor, has outstanding insulating properties. This characteristic endows the capacitor with a high breakdown field strength exceeding 8.2 MV/cm, corresponding to a withstand voltage of 5000 V. High breakdown field strength and withstand voltage mean that the capacitor can handle high-voltage applications without breaking down easily, which is essential for power-intensive systems like high-voltage power supplies and some high-power pulse-generating equipment. Moreover, due to the low-loss property of glass, the capacitor can achieve an energy conversion efficiency of up to 95%. Such a high energy conversion efficiency ensures that less energy is wasted during the charge–discharge process, which is highly beneficial for energy-saving applications and systems that require high-efficiency energy utilization. Full article

Silica aerogels exhibit exceptionally low thermal conductivity and a low apparent density, as they are unique porous nanomaterials. They are extensively used in thermal insulation in terms of aerospace and building construction, adsorption processes for environmental applications, concentrating solar power systems, and so on. However, the degradation of the silica aerogel’s nanoporous structure at high temperatures seriously restricts their practical applications. Through a comprehensive review of the high-temperature structural evolution and sintering mechanisms of silica aerogels, this paper introduces two strategies to enhance their thermal stability, including heteroatom doping and surface heterogeneous structure construction. In particular, atomic layer deposition (ALD) of ultra-thin coatings on silica aerogel holds significant potential for enhancing thermal stability, while preserving its ultra-low thermal conductivity. Full article

As the typical representative of amorphous oxide semiconductors (AOS), quaternary indium gallium zinc oxide (IGZO) has been applied as the active layer of thin-film transistors (TFTs), but their mobility is still low (usually ~10 cm²/Vs). IGTO is reported to have larger mobility owing to the addition of Tin (Sn) in IZO. So, whether Sn doping can increase the optoelectronic properties of IGZO is a new topic worth studying. In this study, four series of quinary InGaZnSnO (IGZTO) oxide thin films were deposited on glass substrates using a high-purity IGZTO (In:Ga:Zn:Sn:O = 1:0.5:1.5:0.25:x, atomic ratio) ceramic target by RF magnetron sputtering. The effects of fabrication parameters (sputtering power, argon gas flow, and target-to-substrate distance) and film thickness on the microstructure, optical, and electrical properties of IGZTO thin films were investigated. The results show that all IGZTO thin films deposited at room temperature (RT) are amorphous and have a smooth and uniform surface with a low roughness (RMS of 0.441 nm, RA of 0.332 nm). They exhibit good average visible light transmittance (89.02~90.69%) and an optical bandgap of 3.47~3.56 eV. When the sputtering power is 90 W, the argon gas flow rate is 50 sccm, and the target-to-substrate distance is 60 mm, the IGZTO films demonstrate optimal electrical properties: carrier concentration (3.66 × 10¹⁹ cm⁻³), Hall mobility (29.91 cm²/Vs), and resistivity (0.54 × 10⁻² Ω·cm). These results provide a valuable reference for the property modulation of IGZTO films and the potential application in optoelectronic devices such as TFTs. Full article

Gallium nitride (GaN) is commonly used in various semiconductor systems owing to its high mobility and thermal stability; however, the production of GaN thin films using the currently employed methods requires improvement. To facilitate the growth of high-quality GaN epitaxial thin films, this study explored the crystallographic structures, properties, and influences of chromium nitride (CrN) buffer layers sputtered under various conditions. The crystallographic orientation of CrN played a crucial role in determining the GaN film quality. For example, even when the crystallinity of the CrN (111) plane was relatively low, a single-phase CrN (111) buffer layer could provide a more favorable template for GaN epitaxy compared to cases where both the CrN (111) and Cr₂N (110) phases coexisted. The significance of a low-temperature (LT) GaN nucleation layer deposited onto the CrN buffer layers was assessed using atomic force microscopy and contact angle measurements. The X-ray phi scan results confirmed the six-fold symmetry of the grown GaN, further emphasizing the contribution of an LT-GaN nucleation layer. These findings offer insights into the underlying mechanisms governing GaN thin film growth and provide guidance for the optimization of the buffer layer conditions to achieve high-quality GaN epitaxial films. Full article

In this work, micro Zn-doped Ga₂O₃ films (GZO) were deposited by one-step mixed atomic layer deposition (ALD) followed by post-thermal engineering. The effects of Zn doping and post-annealing temperature on both structure characteristics and electric properties were investigated in detail. The combination of plasma-enhanced ALD of Ga₂O₃ and thermal ALD of ZnO can realize the fast growth rate (0.62 nm/supercyc.), high density (4.9 g/cm³), and smooth interface (average R_q = 0.51 nm) of Zn-doped Ga₂O₃ film. In addition, the thermal engineering of the GZO was achieved by setting the annealing temperature to 400, 600, 800, and 1000 °C, respectively. The GZO film annealed at 800 °C exhibits a typical crystalline structure (Ga₂O₃: β phase, ZnO: hexagonal wurtzite), a lower roughness (average R_q = 2.7 nm), and a higher average breakdown field (16.47 MV/cm). Notably, compared with the pure GZO film, the breakdown field annealed at 800 °C increases by 180%. The O_V content in the GZO after annealing at 800 °C is as low as 34.8%, resulting in a remarkable enhancement of electrical properties. These research findings offer a new perspective on the high-quality ALD-doped materials and application of GZO in high-power electronics and high-sensitive devices. Full article

In this study, we present atomic layer deposition (ALD) of nickel oxides (NiO_x) using a new nickel precursor, (methylcyclopentadienyl)(cyclopentadienyl)nickel (NiCp(MeCp)), and ozone (O₃) as the oxygen source. The process features a relatively short saturation pulse of the precursor (NiCp(MeCp)) and a broad temperature window (150–250 °C) with a consistent growth rate of 0.39 Å per cycle. The NiO_x film deposited at 250 °C primarily exhibits a polycrystalline cubic phase with minimal carbon contamination. Notably, the post-annealed ALD NiO_x film demonstrates attractive electrocatalytic performance on the oxygen evolution reaction (OER) by providing a low overpotential of 320 mV at 10 mA cm⁻², a low Tafel slope of 70.5 mV dec⁻¹, and sufficient catalytic stability. These results highlight the potential of the ALD process using the NiCp(MeCp) precursor for the fabrication of high-activity catalysts. Full article

Epitaxial growth can be used to guide the controllable growth of one metal on the surface of another substrate by matching the interface lattice, thus improving the dendrite tendency of metal growth. The atomic arrangement of the Cu (111) crystal plane of the FCC structure is similar to that of the Zn (0002) crystal plane of the HCP structure, which is theoretically expected to promote the heterogeneous epitaxial nucleation growth of metal zinc under low strain. In this paper, the molecular dynamics method is used to simulate the atomic process of zinc film growth on the Cu (111) surface. It is found that the behavior of zinc-adsorbed atoms on the substrate surface conforms to the epitaxial growth mode. The close-packed structure grown along the (0002) direction of the layered clusters is tiled on the Cu (111) surface, forming a highly ordered low-lattice-mismatch interface. When a large area of layered zinc clusters cover the substrate, the growth mode will change from heteroepitaxial growth to homoepitaxial growth of Zn atoms on the zinc film, forming a lamellar distribution composed of FCC and HCP structure grains. Polycrystalline zinc film with a planar structure with a (0002) surface preferred a crystal plane. The increase in incident energy is helpful in improving the quality of zinc films, while the deposition rate, corresponding to the deposition temperature and electrolyte ion concentration, has no significant effect on the surface morphology and crystal structure of single metal films. In summary, the atomic arrangement of the Cu (111) surface has a strong guiding effect on the atomic ordered arrangement in the zinc film crystal, which is suitable for the epitaxial deposition of the substrate to induce the ordered growth of the Zn (0002) crystal plane. Full article

In the modern world, gas sensors play a crucial role in sectors such as high-tech industries, medicine, and environmental monitoring. Among these fields, oxygen sensors are the most important. There are several types of oxygen sensors, including optical, magnetic, Schottky diode, and resistive (or chemoresistive) ones. Currently, most oxygen-resistive sensors (ORSs) described in the literature are fabricated as thick layers, typically deposited via screen printing, and they operate at high temperatures, often exceeding 700 °C. This work presents a novel approach utilizing atomic layer deposition (ALD) to create very thin layers. Combined with appropriate doping, this method aims to reduce the energy consumption of the sensors by lowering both the mass requiring heating and the operating temperature. The device fabricated using the proposed process demonstrates a response of 88.21 at a relatively low temperature of 450 °C, highlighting its potential in ORS applications based on doped ALD thin films. Full article

Solid-state lithium batteries are considered ideal due to the safety of solid-state electrolytes. The Na superionic conductor-type Li_1.3Al_0.3Ti_1.7(PO₄)₃ (LATP) is a solid electrolyte with high ionic conductivity, low cost, and stability. However, LATP is reduced upon contact with metallic lithium, leading to lithium dendrite growth on the anode during charging. In this study, LATP was synthesized, and the relationship between crystallinity and ionic conductivity was investigated at different heat treatment temperatures. Optimal sintering conditions and ionic conductivity were analyzed for sintering temperatures from 800 to 1000 °C. To suppress reactions with Li metal, 50 nm thick Ag and 10 nm thick Al₂O₃ layers were deposited on LATP via DC sputtering and plasma-enhanced atomic layer deposition. The electrochemical stability was tested under three conditions: uncoated LATP, Al₂O₃-coated LATP, and Ag+Al₂O₃-coated LATP. The stability improved in the following order: uncoated < Al₂O₃-coated < Ag+Al₂O₃-coated. The Al₂O₃ coating suppressed secondary phase formation by preventing direct contact between LATP and Li, while Ag coating mitigated charge concentration, inhibiting dendrite growth. These findings demonstrate that Ag and Al₂O₃ nano-layers enhance electrolyte stability, advancing solid-state battery reliability and commercialization. Full article

Atomic layer deposition (ALD) of Y₂O₃ thin films was investigated using Y(MeCp)₂(iPr-nPrAMD) precursor and H₂O reactant. The self-limiting reaction mechanism of ALD-Y₂O₃ thin films was confirmed at a growth temperature of 260 °C. And, the saturated growth rate was confirmed to be ~0.11 nm/cycle. Also, it was demonstrated that a wide ALD temperature window from 150 °C to 290 °C maintains a consistent growth rate. ALD-Y₂O₃ thin films were found to have a typical cubic polycrystalline structure, independent of growth temperature, which can be attributed to their stoichiometric composition of Y₂O₃, negligible carbon impurity, and high film density, analogous to the Y₂O₃ bulk. Even at a low growth temperature of 150 °C, ALD-Y₂O₃ exhibited a markedly lower plasma etching rate (~0.77 nm/min) than that (~4.6 nm/min) of ALD-Al₂O₃ when using RIE at a plasma power of 400 W with a mixed gas of Ar/CF₄/O₂. Furthermore, the growth temperature of Y₂O₃ thin films had minimal impact on the etching rate. Full article

This research investigated the corrosion resistance of surface layers on low-carbon steel exposed to a chloride environment at room temperature. This study systematically evaluated the effects of varying pack compositions, coating temperatures, and application durations on the characteristics of the deposited coatings. The potentiodynamic polarization corrosion test was employed to assess the wet corrosion behavior of the specimens. Elemental compositions and microstructural features were analyzed using energy-dispersive X-ray spectroscopy (EDX) in conjunction with scanning electron microscopy (SEM), providing insights into phase distribution. The chromizing, titanizing, and chromotitanizing treatments were conducted at temperatures of 900 °C, 1000 °C, and 1100 °C, respectively, with varying coating times. X-ray diffraction analysis revealed a complex arrangement of elements and compounds within the coatings, including Cr, Ti, Cr_1.9Ti, FeTi, Al₂O₃, Cr₂O₃, TiO₂, Cr_1.36Fe_0.52, and (Ti_0.86)_3.58. The study found that as the deposition duration increased, the coating thickness increased, comprising a thin inner layer and a substantially thicker outer layer. This layered structure resulted from the outward diffusion of Fe atoms and the inward diffusion of Cr and Ti atoms. Electrochemical analysis in a 3.5% NaCl aqueous solution indicated a marked enhancement in the corrosion resistance of the coated specimens compared to their uncoated counterparts. The potentiodynamic polarization tests confirmed that the protective coatings significantly reduced the corrosion rate, with performance influenced by both the temperature and duration of the deposition process. These findings highlighted the potential of tailored coating techniques to improve the durability and performance of low-carbon steel in corrosive environments. Full article

Integrating nanocrystalline diamond (NCD) films on silicon chips has great practical significance and many potential applications, including high-power electronic devices, microelectromechanical systems, optoelectronic devices, and biosensors. In this study, we provide a solution for ensuring heterogeneous interface integration between silicon (Si) chips and NCD films using low-temperature bonding technology. This paper details the design and implementation of a magnetron sputtering layer on an NCD surface, as well as the materials and process for the connection layer of the integrated interface. The obtained NCD/Ti/Cu composite layer shows uniform island-like Cu nanostructures with 100~200 nm diameters, which could promote bonding between NCD and Si chips. Ultimately, a heterogeneous interface preparation of Si/Ag/Cu/Ti/NCD was achieved, with the integration temperature not exceeding 250 °C. The TEM analysis shows the closely packed atomic interface of the Cu NPs and deposited Ti/Cu layers, revealing the bonding mechanism. Full article

We report a new synthesis method for multiple-walled nested thin-film nanostructures by combining hydrothermal growth methods with atomic layer deposition (ALD) thin-film technology and sacrificial films, thereby increasing the surface-to-volume ratio to improve the sensing performance of novel ZnO gas sensors. Single-crystal ZnO nanorods serve as the core of the nanostructure assembly and were synthesized hydrothermally on fine-grained ALD ZnO seed films. Subsequently, the ZnO core nanotubes were coated with alternating sacrificial coaxial 3D wrap-around ALD Al₂O₃ films and ALD ZnO films. Basically, the center nanorod was coated with an ALD 3D wrap-around Al₂O₃ sacrificial layer to realize a nested coaxial ZnO thin-film nanotube. To increase the surface-to-volume ratio of the nested multiple-film nanostructure, both the front and backside of the nested coaxial ZnO films must be exposed by selectively removing the intermittent Al₂O₃ sacrificial films. The selective removal of the sacrificial films exposes the front and backside of the free-standing ZnO films for interaction with target gases during sensing operation while steadily increasing the surface-to-volume ratio. The sensing response of the novel ZnO gas sensor architecture with nested nanotubes achieved a maximum 150% enhancement at low temperature compared to a conventional ZnO nanorod sensor. Full article

Uncrystallized indium-gallium-zinc-oxide (InGaZnO) thin-film transistors (TFTs) combined with an aluminum nitride (AlN) dielectric have been used to promote performance and steadiness. However, the high deposition temperature of AlN films limits their application in InGaZnO flexible TFTs. In this work, AlN layers were deposited via low-temperature plasma-enhanced atomic layer deposition (PEALD), and InGaZnO films were fabricated via high-power impulse magnetron sputtering (HIPIMS). The band alignment of the AlN/InGaZnO heterojunction was studied using the X-ray photoemission spectrum and ultraviolet visible transmittance spectrum. It was found that the AlN/InGaZnO system exhibited a staggered band alignment with a valence band offset ΔE_v of −1.25 ± 0.05 eV and a conduction band offset ΔE_c of 4.01 ± 0.05 eV. The results imply that PEALD AlN could be more useful for surface passivation than a gate dielectric to promote InGaZnO device reliability under atmospheric exposure. Full article