Search Results (1,488)

Multiband solar cells offer a promising route to surpass the Shockley-Queisser limit by harnessing sub-bandgap photons through three active energy band transitions. However, realizing their full potential requires overcoming key challenges in material design and device architecture. Here, we propose a novel multiband stacked anti-parallel junction solar cell structure based on highly mismatched alloys (HMAs), in particular dilute GaAsN with ~1–4% N. An anti-parallel junction consists of two semiconductor junctions connected with opposite polarity, enabling bidirectional current control. The structures of the proposed devices are based on dilute GaAsN with anti-parallel junctions, which allow the elimination of tunneling junctions—a critical yet complex component in conventional multijunction solar cells. Semiconductors with three active energy bands have demonstrated the unique properties of carrier transport through the stacked anti-parallel junctions via tunnel currents. By leveraging highly mismatched alloys with tailored electronic properties, our design enables bidirectional carrier generation through forward- and reverse-biased diodes in series, significantly enhancing photocurrent extraction. Through detailed SCAPS-1D simulations, we demonstrate that strategically placed blocking layers prevent carrier recombination at contacts while preserving the three regions of photon absorption in a single multiband semiconductor p/n junction. Remarkably, our optimized five-stacked anti-parallel junctions structure achieves a maximum theoretical conversion efficiency of 70% under 100 suns illumination, rivaling the performance of state-of-the-art six-junctions III-V solar cells—but without the fabrication complexity of multijunction solar cells associated with tunnel junctions. This work establishes that highly mismatched alloys are a viable platform for high efficiency solar cells with simplified structures. Full article

With the discovery of amorphous oxide semiconductors, a new era of electronics opened. Indium gallium zinc oxide (IGZO) overcame the problems of amorphous and poly-silicon by reaching mobilities of ~10 cm²/Vs and demonstrating thin-film transistors (TFTs) are easy to manufacture on transparent and flexible substrates. However, mobilities over 30 cm²/Vs have been difficult to reach and other materials have been introduced. Recently, polycrystalline In₂O₃ has demonstrated breakthroughs in the field. In₂O₃ TFTs have attracted attention because of their high mobility of over 100 cm²/Vs, which has been achieved multiple times, and because of their use in scaled devices with channel lengths down to 10 nm for high integration in back-end-of-the-line (BEOL) applications and others. The present review focuses first on the material properties with the understanding of the bandgap value, the importance of the position of the charge neutrality level (CNL), the doping effect of various atoms (Zr, Ge, Mo, Ti, Sn, or H) on the carrier concentration, the optical properties, the effective mass, and the mobility. We introduce the effects of the non-parabolicity of the conduction band and how to assess them. We also introduce ways to evaluate the CNL position (usually at ~E_C + 0.4 eV). Then, we describe TFTs’ general properties and parameters, like the field effect mobility, the subthreshold swing, the measurements necessary to assess the TFT stability through positive and negative bias temperature stress, and the negative bias illumination stress (NBIS), to finally introduce In₂O₃ TFTs. Then, we will introduce vacuum and non-vacuum processes like spin-coating and liquid metal printing. We will introduce the various dopants and their applications, from mobility and crystal size improvements with H to NBIS improvements with lanthanides. We will also discuss the importance of device engineering, introducing how to choose the passivation layer, the source and drain, the gate insulator, the substrate, but also the possibility of advanced engineering by introducing the use of dual gate and 2 DEG devices on the mobility improvement. Finally, we will introduce the recent breakthroughs where In₂O₃ TFTs are integrated in neuromorphic applications and 3D integration. Full article

As one of the polymorphs of the gallium oxide family, ε gallium oxide (ε-Ga₂O₃) demonstrates promising potential in high-power electronic devices and solar-blind photodetection applications. However, the synthesis of pure-phase ε-Ga₂O₃ remains challenging through low-energy consumption methods, due to its metastable phase of gallium oxide. In this study, we have fabricated pure-phase and highly oriented ε-Ga₂O₃ thin films on c-plane sapphire substrates via thermal atomic layer deposition (ALD) at a low temperature of 400 °C, utilizing low-reactive trimethylgallium (TMG) as the gallium precursor and ozone (O₃) as the oxygen source. X-ray diffraction (XRD) results revealed that the in situ-grown ε-Ga₂O₃ films exhibit a preferred orientation parallel to the (002) crystallographic plane, and the pure ε phase remains stable following a post-annealing up to 800 °C, but it completely transforms into β-Ga₂O₃ once the thermal treatment temperature reaches 900 °C. Notably, post-annealing at 800 °C significantly enhanced the crystalline quality of ε-Ga₂O₃. To evaluate the optoelectronic characteristics, metal–semiconductor–metal (MSM)-structured solar-blind photodetectors were fabricated using the ε-Ga₂O₃ films. The devices have an extremely low dark current (<1 pA), a high photo-to-dark current ratio (>10⁶), a maximum responsivity (>1 A/W), and the optoelectronic properties maintained stability under varying illumination intensities. This work provides valuable insights into the low-temperature synthesis of high-quality ε-Ga₂O₃ films and the development of ε-Ga₂O₃-based solar-blind photodetectors for practical applications. Full article

NMOSFET, whose gate is on the top of the n-p-n junction with gate oxide in between, is called the n-channel transistor. This bipolar junction underneath the gate oxide may provide an n-n-n-conductive channel as the gate is applied with a positive bias over the threshold voltage (V_th). Conceptually, the definition of an n-type or p-type semiconductor depends on whether the corresponding Fermi energy is higher or lower than the intrinsic Fermi energy, respectively. The positive bias applied to the gate would bend down the intrinsic Fermi energy until it is lower than the original p-type Fermi energy, which means that the p-type becomes strongly inverted to become an n-type. First, the thickness of the inversion layer is derived and presented in a planar 40 nm MOSFET, a 3D 240 nm FinFET, and a power discrete IGBT, with the help of the p (1/m³) of the p-type semiconductor. Different ways of finding p (1/m³) are, thus, proposed to resolve the strong inversion layers. Secondly, the conventional formulas, including the triode region and saturation region, are already modified, especially in the triode region from a continuity point of view. The modified formulas then become necessary and available for fitting the measured characteristic curves at different applied gate voltages. Nevertheless, they work well but not well enough. Thirdly, the electromagnetic wave (EM wave) generated from accelerating carriers (radiation by accelerated charges, such as synchrotron radiation) is proposed to demonstrate phonon scattering, which is responsible for the Source–Drain current reduction at the adjoining of the triode region and saturation region. This consideration of reduction makes the fitting more perfect. Fourthly, the strongly inverted layer may be formed but not conductive. The existing trapping would stop carriers from moving (nearly no mobility, μ) unless the applied gate bias is over the threshold voltage. The quantum confinement addressing the quantum well, which traps the carriers, is to be estimated. Full article

Terahertz (THz) waves, situated between the infrared and microwave regions, possess distinctive properties such as non-contact, high penetration, and high resolution. These properties render them highly advantageous for non-destructive thickness measurement of multilayer structural materials. In comparison with conventional ultrasound or X-ray techniques, THz thickness measurement has the capacity to acquire thickness data for multilayer structures without compromising the integrity of the specimen and is characterized by its environmental sustainability. The extant THz thickness measurement techniques principally encompass time-domain spectroscopy, frequency-domain spectroscopy, and model-based inversion and deep learning methods. A variety of methodologies have been demonstrated to possess complementary advantages in addressing subwavelength-scale thin layers, overlapping multilayer interfaces, and complex environmental interferences. These methodologies render them suitable for a range of measurement scenarios and precision requirements. A wide range of technologies related to this field have been applied in various disciplines, including aerospace thermal barrier coating inspection, semiconductor process monitoring, automotive coating quality assessment, and oil film thickness monitoring. The ongoing enhancement in system integration and continuous algorithm optimization has led to significant advancements in THz thickness measurement, propelling it towards high resolution, real-time performance, and intelligence. This development offers a wide range of engineering applications with considerable potential for future growth and innovation. Full article

The synthesis, phase behavior and semiconductor properties of two novel organosilicon tetramers with dialkyl-substituted [1]benzothieno[3,2-b]benzothiophene (BTBT) moieties, D4-Und-BTBT-Hex and D4-Hex-BTBT-Oct, are described. The synthesis of these molecules was carried out by sequential modification of the BTBT core by carbonyl-containing functional alkyl substituents using the Friedel–Crafts reaction, followed by the reduction in the keto group. The target tetramers, D4-Und-BTBT-Hex and D4-Hex-BTBT-Oct, were obtained by the hydrosilylation reaction between tetraallylsilane and corresponding 1,1,3,3-tetramethyl-1-(ω-(7-alkyl[1]benzothieno[3,2-b]benzothiophen-2-yl)alkyl)disiloxanes. The chemical structure of the compounds obtained was confirmed by NMR ¹H-, ¹³C- and ²⁹Si-spectroscopy, gel permeation chromatography and elemental analysis. Their phase behavior was investigated by differential scanning calorimetry, polarization optical microscopy and X-ray diffraction analysis. It was found that D4-Und-BTBT-Hex shows higher crystallinity at room temperature as compared to D4-Hex-BTBT-Oct, while both molecules possess smectic ordering favorable for active layer formation in organic field-effect transistors (OFETs). The active layers were applied by spin-coating under conditions of a homogeneous thin layer formation with a low content of defects. The devices obtained from D4-Und-BTBT-Hex have demonstrated good semiconductor characteristics in OFETs with a hole mobility up to 3.5 × 10⁻² cm² V⁻¹ s⁻¹, a low threshold voltage and an on/off ratio up to 10⁷. Full article

We report a high-performance photomultiplication-type organic photodetector (OPD) based on a poly[2-methoxy-5-(3,7-dimethyloctyloxy)-1,4-phenylenevinylene]:[6,6]-phenyl-C₆₁-butyric acid methyl ester (MDMO-PPV:PC₆₁BM) active layer operating in the ultrastrong coupling regime. Systematic optimization of the PC₆₁BM ratio in reference non-cavity devices confirms that trap-assisted hole injection from the Ag contact enables external quantum efficiencies (EQEs) exceeding 2000% and fast transient responses under 521 nm illumination, close to the absorption peak of MDMO-PPV. Incorporation of the optimized PC₆₁BM ratio into a λ/2 microcavity produces well-resolved lower (LP) and upper (UP) polariton branches with a pronounced Rabi splitting of approximately 0.9 eV, confirming the establishment of ultrastrong light–matter coupling. The resulting cavity OPD exhibits a distinct wavelength-dependent response compared with its non-cavity counterpart, achieving maximum EQEs of 838% at 450 nm (near the UP mode) and 445% at 628 nm (corresponding to the LP mode). These spectral responses are attributed to cavity-induced field modulation, which enhances exciton generation beyond the primary absorption band of MDMO-PPV. Overall, this work demonstrates that combining photomultiplication mechanisms with cavity-field engineering provides an effective strategy for realizing narrowband, high-gain polaritonic photodetectors that surpass the spectral response limitations of conventional organic semiconductors. Full article

Yttrium oxide (Y₂O₃) films have been widely used as protective layers in plasma etching equipment, but achieving stoichiometric films with high deposition rates remains a challenge. In this study, Y₂O₃ films were fabricated by a medium-frequency reactive magnetron sputtering (MF-RMS) technique. The oxygen flow and target control voltage were regulated through a closed-loop feedback control system, which effectively solved the problem. The microstructure, mechanical, optical, and plasma etching properties were systematically investigated. The results showed that near-stoichiometric films can achieve a relatively high deposition rate. Increasing the deposition temperature induced a structural transition in the Y₂O₃ film from a predominantly cubic phase to a mixture of cubic and monoclinic phases. For Y₂O₃ films deposited at room temperature, increasing the bias voltage increased the deposition rate but reduced hardness and elastic modulus. The Y₂O₃ film deposited at 300 °C in the near-metallic mode exhibited the highest hardness and elastic modulus, reaching 13.3 GPa and 222.0 GPa, respectively. All Y₂O₃ films exhibited excellent transmittance and resistance to plasma etching. This study provides an effective protective strategy for semiconductor etching chambers. Full article

The exponential growth of artificial intelligence (AI), electrified transport, and renewable generation is accelerating a structural shift in how societies produce, deliver, and consume electricity. We argue that the next frontier is not incremental efficiency but Energy Intelligence (EI): the embedding of predictive analytics, adaptive control, and material-aware design directly into power-conversion hardware. In this view, power electronics functions as the cognitive layer that links digital intelligence to the physical flow of energy. Wide-bandgap (WBG) semiconductors—gallium nitride (GaN) and silicon carbide (SiC)—provide the material foundation for higher switching frequencies, superior power density, and real-time controllability, enabling compact and efficient converters for data-centers, EV charging, and grid-interactive resources. We formalize an EI reference architecture (predictive, adaptive, material-efficient, data-driven), review the convergence of AI methods with converter design and operation, and outline a GaN/SiC-enabled data-center power path as an illustrative case. Finally, we examine sustainability and sovereignty, highlighting exposure to critical materials (Ga, Si, In, rare earths) and proposing a roadmap that integrates technology, policy, and education. By reframing power electronics as an intelligent, learning infrastructure, this work sets an agenda for systems that are not only efficient but also self-optimizing, explainable, and resilient. Full article

We have fabricated amorphous tin oxide (a-SnO_x) thin-film transistors (TFTs) with Al₂O₃ gate insulator from deep eutectic solvents (DESs). DESs were formed using the chloride derivates of each precursor (SnCl₂, or AlCl₃) mixed with urea. The DESs were then used as precursors for the semiconductor and dielectric. Our target was to form extremely thin semiconductor film, and a sufficient high capacitance insulator. We characterized the physical and chemical properties of the DES-derived thin films by X-ray diffraction (XRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). We could evaluate that the highest content of metal–oxygen bonds was from the DES condition SnCl₂–urea = 1:3. At a low 300 °C budget temperature, we could fabricate a 3.2 nm thick a-SnO_x layer and 30 nm thick Al₂O₃, from which the TFT demonstrated a mobility of 80 ± 17 cm²/Vs, threshold voltage of −0.29 ± 0.06 V, and subthreshold swing of 88 ± 11 mV/dec. The proposed process is adequate with the back-end of the line (BEOL) process, but it is also eco-friendly because of the use of DESs. Full article

The development of metal nanostructures on large-area Gallium Nitride (GaN) surfaces has the potential to enable new, low-cost technologies for III-N semiconductor layer nanostructuring. Self-assembled nanostructures are typically formed through the thermal activation of solid-state dewetting (SSD) in thin metal layers. However, such thermal processing can induce degradation of the metal-GaN material system. This comprehensive study investigated the thermal stability of thin metal films on GaN surfaces, focusing on their morphology and nanostructuring for high-temperature processing. The research expands and systematizes the understanding of the thin metal layers on GaN surface interactions at high temperatures by categorizing metals based on their behaviour: those that exhibit self-assembly, those that catalyze GaN decomposition, and those that remain thermally stable. Depending on the annealing temperature and metal type, varying degrees of GaN layer decomposition were observed, ranging from partial surface modification to significant volumetric degradation of the material. A wide range of metals was investigated: Au, Ag, Pt, Ni, Ru, Mo, Ti, Cr, V, Nb. These materials were selected based on criteria such as high work function and chemical resistance. In this studies metal layers with a target thickness of 10 nm deposited by vacuum evaporation on 2.2 $\mathsf{\mu }$m thick GaN layers grown by metal organic vapor phase epitaxy were applied. The surface morphology and composition were analyzed using AFM, SEM, EDS, and Raman spectroscopy measurement techniques. Full article

As optical networks continue to evolve toward higher speed and larger capacity, conventional security mechanisms relying on optoelectronic conversion are facing increasing limitations. The optical photonic firewall, as an emerging optical-layer security device, enables direct inspection in the optical domain, making its core technology—All-Optical Pattern Matching (AOPM)—a focal point of current research. This review provides a comprehensive survey of AOPM systems. It first introduces the main components of AOPM, namely symbol matching and system architectures, and analyzes their representative implementations. For low-order modulation formats such as OOK and BPSK, the review highlights matching schemes enabled by semiconductor optical amplifier (SOA) and highly nonlinear fiber (HNLF) logic gates, as well as their potential for reconfigurable extension. Building upon this foundation, the paper focuses on systems for high-order modulation formats including QPSK, 8PSK, and 16QAM, covering dimensionality-reduction-based approaches (e.g., PSA-based phase compression, squarer-based phase multiplication, constellation-mapping-based format conversion), direct symbol matching methods (e.g., phase interference, generalized XNOR, real-time Fourier transform correlation), and reconfigurable designs for multi-format adaptability. Furthermore, the review discusses optimization challenges under non-ideal conditions, such as noise accumulation, phase misalignment, and phase-locking-free operation. Finally, it outlines future directions in robust high-order modulation handling, photonic integration, and AI-driven intelligent matching, offering guidance for the development of optical-layer security technologies. Full article

Based on the Hilbert–Riemann theory, this paper develops a simplified model to address interfacial fracture in bi-layer laminated solar cells with significantly dissimilar thermal properties. The model is used to analyze interfacial normal stress distributions and identify critical stress points, taking into account the substantial mismatch in the coefficients of thermal expansion between the semiconductor and encapsulation layers. The predicted temperature and stress fields are validated through finite element simulations. Furthermore, by investigating commonly used encapsulation films and solar cell modules, the coupled effects of the thermal expansion coefficient and elastic modulus are elucidated. The results demonstrate that, under a constant layer thickness, the position of the stress critical point is governed by two dimensionless parameters: the ratio of thermal expansion coefficients and the ratio of elastic moduli. This work offers an efficient and practical approach for predicting thermal stress concentration trends in laminated solar cell structures, thereby providing useful insights for the design and fabrication of solar modules. Full article

The long-term reliability of catalytic gas sensors is strongly influenced by changes in the chemical state and cleanliness of the catalyst surface. In this work, we investigate the surface composition and stability of the platinum (Pt) nanoparticle catalytic layer in Gas Metal-Oxide-Semiconductor (GMOS) sensors under varying environmental conditions. Using X-ray Photoelectron Spectroscopy (XPS) and High-Resolution (HR) XPS, we compared fresh, aged samples, thermally treated samples, and samples stored with or without a mechanical filter. The results show that prolonged ambient storage leads to the accumulation of adventitious carbon and nitrogen-containing species, as well as partial oxidation of platinum, which reduces the number of active metallic Pt sites. Thermal treatment at 300 °C for 30 min restores metallic Pt exposure by removing surface contaminants and narrowing the Pt 4f peaks. However, recontamination occurs during subsequent storage, with significant differences depending on surface protection. Sensors equipped with a mechanical filter exhibited obvious Pt metallic peaks in HR-XPS analysis, with lower carbon and nitrogen levels, compared to unprotected samples. These findings demonstrate that while heating refreshes catalytic activity, long-term stability requires complementary filtration to prevent re-adsorption of airborne species. The combined approach of heating and filtration is thus essential to ensure reliable performance of GMOS sensors for indoor and outdoor air quality monitoring. Full article

The fabrication of semiconductor devices with three-dimensional architectures imposes unprecedented demands on advanced plasma dry etching processes. These include the simultaneous requirements of high throughput, high material selectivity, and precise profile control. In conventional reactive ion etching (RIE), fluorocarbon plasma provides both accelerated ion species and reactive neutrals that etch the feature front, while the CF_x radicals promote polymerization that protects sidewalls and enhance selectivity to the amorphous carbon layer (ACL) mask. In this work, we present computational results on the role of CF₄ addition to hydrogen fluoride (HF) plasma for next-generation RIE, specifically cryogenic etching. Simulations were performed by varying the CF₄ concentration in the HF plasma to evaluate its influence on ion densities, neutral species concentration, and electron density. The results show that the densities of CF_x (x = 1–3) ions and radicals increase significantly with CF₄ addition (up to 20%), while the overall plasma density and the excited HF species remain nearly unchanged. The results of plasma density and atomic fluorine density are consistent with the experimental observations of the HF/CF₄ plasma using an absorption probe and the actimetry method. It was verified that the gas-phase reaction model proposed in this study can accurately reproduce the plasma characteristics of the HF/CF₄ system. The coupling of HF-based etchants with CF_x radicals enables polymerization that preserves SiO₂ etching throughput while significantly enhancing etch selectivity against the ACL mask from 1.86 to 5.07, with only a small fraction (~10%) of fluorocarbon gas added. The plasma simulation provides new insights into enhancing the etching performance of HF-based cryogenic plasma etching by controlling the CF₂ radicals and HF reactants through the addition of fluorocarbon gases. Full article