Search Results (273)

Copper-doped indium zinc sulfides were synthesized by heating and stirring a mixture of zinc chloride, indium chloride tetrahydrate, thioacetamide, and copper chloride at 180 °C for 18 h. Among these, Zn_5.7Cu_0.3In₂S₉ exhibited a hydrogen-producing activity of 1660 μmol/g·h, which was approximately five times higher than that of pristine indium zinc sulfide. Therefore, the catalyst was characterized to investigate the effect of Cu addition. PL results revealed that the incorporation of Cu reduced the fluorescence intensity, indicating suppressed recombination of photogenerated electron–hole pairs. DRS showed that the Cu addition enhanced optical absorption in the visible-light region and narrowed the band gap. These findings suggest that the incorporation of copper into indium zinc sulfide improves its photocatalytic activity. Full article

Transparent conductive oxides (TCOs) have become essential components in a broad range of modern devices, including smartphones, flat-panel displays, and photovoltaic cells. Currently, indium tin oxide (ITO) is used in approximately 90% of these devices. However, ITO prices continue to rise due to the limited supply of indium (In), making the development of alternative materials for TCOs indispensable. Therefore, this study highlights the latest advances in creating new, affordable materials, with a focus on aluminum-doped zinc oxide (AZO). Over the last few decades, this material has been widely studied to improve its physical properties, particularly its low electrical resistivity, which can affect the performance of various devices. Now, it is close to replacing ITO due to several advantages including cost-effectiveness, stability under hydrogen plasma, low processing temperatures, and lack of toxicity. Besides that, in comparison to other TCOs such as IZO, IGZO, or IZrO, AZO achieved a low electrical resistivity (10⁻⁵ ohm cm) while maintaining a high transparency across the visible spectrum (over 85%). Additionally, due to the increasing development of technologies utilizing such materials, it is essential to develop more effective techniques for producing TCOs on a larger scale. Additionally, due to the increasing development of technologies utilizing such materials, it is essential to develop more effective techniques for producing TCOs on a larger scale. This review emphasizes the potential of AZO as a cost-effective and scalable alternative to ITO, highlighting key advancements in deposition techniques such as pulsed laser deposition (PLD). Full article

Windows are a major contributor to energy loss in buildings, particularly in hot climates where solar radiation heat gain significantly increases cooling demand. An ideal energy-efficient window must maintain high visible light transmittance while effectively blocking ultraviolet and near-infrared radiation, presenting a significant challenge for material design. We propose a plasma silica aerogel window utilizing the local surface plasmon resonance effect of plasmonic nanoparticles. This design incorporates indium tin oxide (ITO) nanospheres (for broad-band UV/NIR blocking) and silver (Ag) nanocylinders (targeted blocking of the 0.78–0.9 μm NIR band) co-doped into the silica aerogel. This design achieves a visible light transmittance of 0.8, a haze value below 0.12, and a photothermal ratio of 0.91. Building simulations indicate that compared to traditional glass, this window can achieve annual energy savings of 20–40% and significantly reduce the economic losses associated with traditional glass, providing a feasible solution for sustainable buildings. Full article

Aiming to contribute to environmental remediation strategies, this work proposes a novel fabrication of photoelectrocatalytic electrodes containing a BiOI coating deposited onto non-conductive glass (NCG) for CO₂ conversion applications. When BiOI electrodes are not deposited onto fluorine-doped tin oxide (FTO) or indium tin oxide (ITO) conductive supports, the electrochemical measurements enable the registration of the (photo)electrochemical response for bare BiOI, thereby excluding remnant signals from the conductive supports and reporting an exclusive and proper photoelectrocatalytic BiOI response. A systematic procedure was carried out to improve the physicochemical properties of BiOI through a simple variation in the amount of reagents employed in a solvothermal synthesis, thus increasing the crystallite size and surface area of the resulting material (BiOI-X3-20wt.%). The tailored BiOI coating on a non-conductive support showed activity in performing CO₂ photoelectroreduction under UV–Vis irradiation in aqueous media. Finally, the BiOI-X3-20wt.% sample was evaluated for photocatalytic CO₂ conversion in gaseous media, producing CO as the primary reaction product. This study confirms that BiOI is a suitable and easily synthesized material, with potential applications for CO₂ capture and conversion when employed as a photoactive coating for environmental remediation. Full article

This study provides an in-depth numerical simulation to optimize the structure of InGaN-based p-i-n single homojunction solar cells using SCAPS-1D software. The cell comprised a p-type ${\mathrm{I}\mathrm{n}}_{0.6}{\mathrm{G}\mathrm{a}}_{0.4}\mathrm{N}$ layer, an intrinsic i-type ${\mathrm{I}\mathrm{n}}_{0.52}{\mathrm{G}\mathrm{a}}_{0.48}\mathrm{N}$ layer, and an n-type ${\mathrm{I}\mathrm{n}}_{0.48}{\mathrm{G}\mathrm{a}}_{0.52}\mathrm{N}$ layer. A systematic parametric optimization methodology was employed, involving a sequential investigation of doping concentrations, layer thicknesses, and indium composition to identify the optimal device configuration. Initial optimization of doping levels established optimal concentrations of ${\mathrm{N}}_{\mathrm{d}}=1\times {10}^{16} {\mathrm{c}\mathrm{m}}^{-3}$ for the p-layer and ${\mathrm{N}}_{\mathrm{a}}=8\times {10}^{17} {\mathrm{c}\mathrm{m}}^{-3}$ for the n-layer. Subsequently, structural parameters were optimized through systematic variation of layer thicknesses while maintaining optimal doping concentrations. The comprehensive optimization culminated in the identification of an optimal device architecture featuring a p-type layer thickness of 0.2 μm, an intrinsic layer thickness of 0.4 μm, an n-type layer thickness of 0.06 μm, and an indium composition of x = 0.59 in the intrinsic layer. This fully optimized configuration achieved a maximum conversion efficiency (η) of 21.40%, a short-circuit current density (${\mathrm{J}}_{\mathrm{s}\mathrm{c}}$) of 28.2 mA/cm², and an open-circuit voltage ($V_{oc}$) of 0.874 V. The systematic optimization approach demonstrates the critical importance of simultaneous parameter optimization in achieving superior photovoltaic performance, with the final device configuration representing a 30.01% efficiency improvement compared to the baseline structure. These findings provide critical insights for improving the design and performance of InGaN-based solar cells, serving as a valuable reference for future experimental research. Full article

Electrocatalytic urea synthesis offers great potential for sustainable strategies through CO₂ and NO₃⁻ reduction reactions. However, the development of high-performance catalysts is often hampered by the complexity of synthetic methodologies and the unresolved nature of C-N coupling pathways. In this study, we present a copper–indium co-doped titanium dioxide (CuIn-TiO₂) catalyst that exhibits remarkable efficacy in enhancing the synergistic reduction of CO₂ and NO₃⁻ to produce urea. The bimetallic CuIn site functions as the primary active site for the C-N coupling reaction, achieving a urea yield rate of 411.8 μg h⁻¹ mg_cat⁻¹ with a Faradaic efficiency of 6.7% at −0.8 V versus reversible hydrogen electrode (vs. RHE). A body of experimental and theoretical research has demonstrated that the nanoscale particles enhance the density of active sites and improve the feasibility of reactions on the surface of TiO₂. The co-doping of Cu and In has been shown to significantly enhance electronic conductivity, increase the adsorption affinity for *CO₂ and *NO₃⁻, and promote the C-N coupling process. The CuIn-TiO₂ catalyst has been demonstrated to effectively promote the reduction of NO₃⁻ and CO₂, as well as accelerate the C-N coupling reaction. This effect is a result of a synergistic interaction among the catalyst’s components. Full article

Se-doped CdTe thin films were grown employing a simple two-electrode electrochemical deposition method using glass/tin-doped indium oxide (glass/ITO). Cadmium acetate dihydrate [Cd (CH₃CO₂)₂. 2H₂O], selenium dioxide (SeO₂), and tellurium dioxide (TeO₂) were used as precursors. Instruments including X-ray diffraction for structural investigation, UV-Vis spectrophotometry for optical properties, and scanning probe microscopy for morphological properties were employed to investigate the physico-chemical characteristics of the resulting Se-doped CdTe thin-film. The films are polycrystalline with a cubic phase, according to X-ray diffraction (XRD) data. More ions are deposited on the substrate, which makes the material more crystalline and intensifies the characteristic peaks that are seen. It is observed from the acquired optical characterization that the film’s bandgap is greatly influenced by the deposition time. The bandgap dropped from 1.92 to 1.62 as the deposition period increased from 25 to 45 min, making the film more transparent and absorbing less light at shorter deposition durations. Images from scanning electron microscopy (SEM) show that the surface morphology is homogenous with closely packed grains and that the grain forms become less noticeable as the deposition time increases. This work is novel in that it investigates the influence of the deposition time on the structural, optical, and morphological properties of Se-doped CdTe thin films deposited using a cost-effective, simplified two-electrode electrochemical method—a fabrication route that remains largely unexplored for this material system. Full article

Cu-doped In₂O₃ nanocomposites with copper compositions of 1–3 wt.% are synthesized by a hydrothermal method using water or alcohol as a solvent. Cubic In₂O₃ is formed when water is used for synthesis, while composites synthesized in alcohol contain rhombohedral In₂O₃. This trend is independent of the amount of copper introduced. The Cu ions are shown to be uniformly distributed in the In₂O₃ nanoparticles without significant destruction of the indium oxide structure. All the composites exhibit a porous structure that depends on the solvent used for the synthesis. The addition of copper to both crystalline forms of indium oxide increases the resistance of the films and reduces the operating temperature. The phase state of indium oxide also affects the conductivity of the composites. There is an increase in sensory response to H₂ and CO with the introduction of Cu into samples with cubic structure, but a reduction in response in samples with the rhombohedral phase of indium oxide. Full article

Copper antimony sulfide (CuSbS₂) is an affordable and eco-friendly solar absorber with an optimal bandgap and high absorption coefficient, and it stands out as a promising candidate for thin-film solar cells. This study investigates the effects of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), and glass substrates on the microstructural, morphological, and optical properties of CuSbS₂ (CAS) layers synthesized via spray pyrolysis. X-ray Diffraction (XRD) and Raman spectroscopy analyses revealed that CAS phases formed on ITO and FTO substrates exhibited a phase composition without additional copper phases. However, the CAS layer on glass contained a copper sulfide (CuS) phase, which can be detrimental for solar cell applications. Furthermore, the influences of the substrate morphology and contact angle on the growth mechanisms of CAS layers was examined, highlighting the relationship between the substrate micromorphology and the resultant film characteristics. Advanced image processing techniques applied to Atomic Force Microscopy (AFM) images of the substrate surfaces facilitated a comprehensive comparison with the surface characteristics of the CAS films grown on those substrates. Field Emission Scanning Electron Microscopy (FESEM) indicated that CAS layers on ITO possessed larger grains than FTO, whereas those on FTO exhibited lower roughness with a more uniform grain distribution. Notably, the optical properties of the CAS layers correlated strongly with their microstructural and morphological characteristics. This work highlights the critical influence of substrate choice on the growth and characteristics of CAS layers through a comparative analysis. Full article

The rising demand for sustainable energy solutions has spurred the development of advanced materials for photovoltaic devices. Among these, transparent conductive oxides (TCOs) play a pivotal role in enhancing device efficiency, particularly in silicon-based solar cells. However, the reliance on indium-based TCOs like ITO raises concerns over cost and material scarcity, prompting the search for more abundant and scalable alternatives. This study focuses on the fabrication and characterization of aluminum-doped zinc oxide (ZnO:Al, AZO) thin films deposited via Atomic Layer Deposition (ALD), targeting their application as transparent conductive oxides in silicon solar cells. The ZnO:Al thin films were synthesized by alternating supercycles of ZnO and Al₂O₃ depositions at 225 °C, allowing precise control of composition and thickness. Structural, optical, and electrical properties were assessed using Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), Raman spectroscopy, spectroscopic ellipsometry, and four-point probe measurements. The results confirmed the formation of uniform, crack-free ZnO:Al thin films with a spinel-type ZnAl₂O₄ crystalline structure. Optical analyses revealed high transparency (more than 80%) and tunable refractive indices (1.64 ÷ 1.74); the energy band gap was 2.6 ÷ 3.07 eV, while electrical measurements demonstrated low sheet resistance values, reaching 85 Ω/□ for thicker films. This combination of optical and electrical properties underscores the potential of ALD-grown AZO thin films to meet the stringent demands of next-generation photovoltaics. Integration of Zn:Al thin films into silicon solar cells led to an optimized photovoltaic performance, with the best cell achieving a short-circuit current density of 36.0 mA/cm² and a power conversion efficiency of 15.3%. Overall, this work highlights the technological relevance of ZnO:Al thin films as a sustainable and cost-effective alternative to conventional TCOs, offering pathways toward more accessible and efficient solar energy solutions. Full article

BiFeO₃ is a fascinating material with a rhombohedral crystal structure (R3c) at room temperature. This unique structure makes it suitable for use in solar cells, as the interaction of light with the polarized octahedral enhances electron movement. Evaluating its properties on different substrates helps to identify the specific characteristics of thin films. The thin films presented in this work were deposited using reactive RF cathodic sputtering with a homemade 1-inch diameter ceramic target. Their morphology, phase composition, optical, piezoelectric, and ferroelectric properties were evaluated. Fluorine Tin Oxide (FTO) and Indium Tin Oxide (ITO) substrates were used for the presented thin films. The thin films deposited on FTO displayed the “butterfly” behavior typically associated with ferroelectric materials. A d₃₃ value of 2.71 nm/V was determined using SSPFM-DART mode. In contrast, the thin films deposited on ITO at 550 °C reached a maximum saturation polarization of 40.89 μC/cm² and a remnant polarization of 44.87 μC/cm², which are the highest values recorded, but did not present the typical “butterfly” behavior. As the grain size increased, the influence of charge defects became more pronounced, leading to an increase in the leakage current. Furthermore, the presence of secondary phases also contributed to this behavior. Full article

Two-dimensional materials have emerged as core components for next-generation optoelectronic devices due to their quantum confinement effects and tunable electronic properties. Indium selenide (InSe) demonstrates breakthrough photoelectric performance, with its remarkable light-responsive characteristics spanning from visible to near-infrared regions, offering application potential in high-speed imaging, optical communication, and biosensing. This study investigates the doping characteristics of InSe using first-principles calculations, focusing on the doping and adsorption behaviors of Argentum (Ag) and Bismuth (Bi) atoms in InSe and their effects on its electronic structure. The research reveals that Ag atoms preferentially adsorb at interlayer vacancies with a binding energy of −2.19 eV, forming polar covalent bonds. This reduces the band gap from the intrinsic 1.51 eV to 0.29–1.16 eV and induces an indirect-to-direct band gap transition. Bi atoms doped at the center of three Se atoms exhibit a binding energy of −2.06 eV, narrowing the band gap to 0.19 eV through strong ionic bonding, while inducing metallic transition at inter-In sites. The introduced intermediate energy levels significantly reduce electron transition barriers (by up to 60%) and enhance carrier separation efficiency. This study links doping sites, electronic structures, and photoelectric properties through computational simulations, offering a theoretical framework for designing high-performance InSe-based photodetectors. It opens new avenues for narrow-bandgap near-infrared detection and carrier transport optimization. Full article

The gas-sensitive performance and selectivity of gas sensors via different Sn-doped indium oxide (In₂O₃) films have been investigated. The response characteristics were significantly enhanced to methanol (CH₄O), ethanol (C₂H₆O), and acetone (C₃H₆O) with the increase in Sn content, while the response time and the recovery time became shorter. The sensor exhibited the strongest response to ethanol, followed by acetone and then methanol with all the ratios of In₂O₃ (90%, 85%, and 80%) and SnO₂ (10%, 15%, and 20%). The mechanism of Sn doping on the gas sensing selectivity was calculated using the density functional theory (DFT) method, which perfectly explained the experimental results. The sensors demonstrated high selectivity towards ethanol, even in the presence of interfering gases. In addition, the sensors showed effective detection of the target gas with 10 ppb and demonstrated good repeatability. This work systematically analyzed the priority selectivity of In₂O₃-based gas sensors, providing a new path for gas detection in multi-interference and complex environments. Full article

As the typical representative of amorphous oxide semiconductors (AOS), quaternary indium gallium zinc oxide (IGZO) has been applied as the active layer of thin-film transistors (TFTs), but their mobility is still low (usually ~10 cm²/Vs). IGTO is reported to have larger mobility owing to the addition of Tin (Sn) in IZO. So, whether Sn doping can increase the optoelectronic properties of IGZO is a new topic worth studying. In this study, four series of quinary InGaZnSnO (IGZTO) oxide thin films were deposited on glass substrates using a high-purity IGZTO (In:Ga:Zn:Sn:O = 1:0.5:1.5:0.25:x, atomic ratio) ceramic target by RF magnetron sputtering. The effects of fabrication parameters (sputtering power, argon gas flow, and target-to-substrate distance) and film thickness on the microstructure, optical, and electrical properties of IGZTO thin films were investigated. The results show that all IGZTO thin films deposited at room temperature (RT) are amorphous and have a smooth and uniform surface with a low roughness (RMS of 0.441 nm, RA of 0.332 nm). They exhibit good average visible light transmittance (89.02~90.69%) and an optical bandgap of 3.47~3.56 eV. When the sputtering power is 90 W, the argon gas flow rate is 50 sccm, and the target-to-substrate distance is 60 mm, the IGZTO films demonstrate optimal electrical properties: carrier concentration (3.66 × 10¹⁹ cm⁻³), Hall mobility (29.91 cm²/Vs), and resistivity (0.54 × 10⁻² Ω·cm). These results provide a valuable reference for the property modulation of IGZTO films and the potential application in optoelectronic devices such as TFTs. Full article

Solution-processed metal oxide dielectrics often result in unstable thin-film transistor (TFT) performance, hindering the development of next-generation metal oxide electronics. In this study, we prepared fluorine (F)-doped zirconium oxide (ZrO₂) dielectric layers using a chemical solution method to construct TFTs. The characterization by X-ray photoelectron spectroscopy (XPS) revealed that appropriate fluoride doping significantly reduces oxygen vacancies and the concentration of hydroxyl groups, thereby suppressing polarization processes. Subsequently, the electrical properties of Al/F:ZrO₂/n⁺⁺Si capacitors were evaluated, demonstrating that the optimized 10% F:ZrO₂ dielectric exhibits a low leakage current density and stable capacitance across a wide frequency range. Indium zinc oxide (IZO) TFTs incorporating 10% F:ZrO₂ dielectric layers were then fabricated. These devices displayed reliable electrical characteristics, including high mobility over a broad frequency range, reduced dual-sweep hysteresis, and excellent stability under positive-bias stress (PBS) after three months of aging. These findings indicate that the use of the fluorine-doped ZrO₂ dielectric is a versatile strategy for achieving high-performance metal oxide thin-film electronics. Full article