Search Results (157)

In this paper, the first demonstration of a highly strained In_0.8Ga_0.2As/In_0.2Ga_0.8Sb type-II superlattice structure grown on InAs substrates by molecular beam epitaxy (MBE) for long-wavelength infrared detection was reported. Novel methodologies were developed to optimize the As and Sb flux growth conditions. The quality of the epitaxial layer was characterized using multiple analytical techniques, including differential interference contrast microscopy, atomic force microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy. The high-quality superlattice structure, with a total thickness of 1.5 μm, exhibited exceptional surface morphology with a root-mean-square roughness of 0.141 nm over a 5 × 5 μm² area. Single-element devices with PIN architecture were fabricated and characterized. At 77 K, these devices demonstrated a 50% cutoff wavelength of approximately 12.1 μm. The long-wavelength infrared PIN devices exhibited promising performance metrics, including a dark current density of 7.96 × 10⁻² A/cm² at −50 mV bias and a high peak responsivity of 4.90 A/W under zero bias conditions, both measured at 77 K. Furthermore, the devices achieved a high peak quantum efficiency of 65% and a specific detectivity (D*) of 2.74 × 10¹⁰ cm·Hz^1/2/W at the peak responsivity wavelength of 10.7 µm. These results demonstrate the viability of this material system for long-wavelength infrared detection applications. Full article

In this study, the influence of HfO₂ interlayer thickness on the performance of heteroepitaxial α-Ga₂O₃ layer-based metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors is examined. A thin HfO₂ interlayer enhances the interface quality and reduces the density of interface traps, thereby improving the performance of UVC photodetectors. The fabricated device with a 1 nm HfO₂ interlayer exhibited a significantly reduced dark current and higher photocurrent than a conventional metal–semiconductor–metal (MSM). Specifically, the 1 nm HfO₂ MISIM device demonstrated a photocurrent of 2.3 μA and a dark current of 6.61 pA at 20 V, whereas the MSM device exhibited a photocurrent of 1.1 μA and a dark current of 73.3 pA. Furthermore, the photodetector performance was comprehensively evaluated in terms of responsivity, response speed, and high-temperature operation. These results suggest that the proposed ultra-thin HfO₂ interlayer is an effective strategy for enhancing the performance of α-Ga₂O₃-based UVC photodetectors by simultaneously suppressing dark currents and increasing photocurrents and ultimately demonstrate its potential for stable operation under extreme environmental conditions. Full article

Compared to the traditional flip-chip bonded focal plane array, in high-density vertically integrated photodiode (HDVIP) focal plane technology, the thickness of the mercury cadmium telluride (MCT or Hg_1−xCd_xTe) layer serves as a more critical parameter. This parameter not only influences the efficiency of photon energy absorption but also defines the pn junction area, thereby affecting the magnitude of the dark current. Furthermore, it significantly impacts the manufacturability of via-hole etching and formation processes. This paper investigated the photonic crystal resonances and coherent perfect absorption (CPA) effect of a thin MCT layer in HDVIP by using COMSOL Multiphysics^® 4.3b and optimized the structure of the loop-hole photodiode device. The CPA, which is formed by this structure, achieves high absorption of illumination in a very thin MCT film. It is demonstrated that an absorption rate of infrared radiation of more than 95% with a wavelength during the 8 µm–10 µm range can be achieved in Hg_1−xCd_xTe (x = 0.225) with a thickness of only 1.5 µm–3 µm. The benefit of thinner MCT film is that it decreases the dark current of pn junction and reduces the technical difficulty of etching and metallization of the loop-hole photodiode. Full article

In recent years, protecting stainless steel from corrosion has become crucial, particularly in harsh environments. The present study focuses on improving the photocathodic corrosion resistance of 304 stainless steel (304SS) by fabricating TiO₂/CuO composite coatings using the spin coating technique with varying CuO weight percentages. Structural characterization through X-ray diffraction (XRD) confirmed the presence of the anatase phase of TiO₂ and the successful integration of CuO. Raman spectroscopy demonstrated redshifts in the TiO₂ characteristic peaks, suggesting changes in bond lengths attributed to CuO incorporation. These findings were further corroborated by Fourier-transform infrared (FTIR) spectroscopy. Surface characterization showed uniform, porous coatings with pore sizes ranging from 75 to 200 nm, which contributed to improved barrier properties. UV–visible diffuse reflectance spectroscopy (UV-DRS) demonstrated enhanced visible light absorption in the heterostructures. Mott–Schottky analysis confirmed improved charge carrier density and favorable band alignment, facilitating efficient charge separation. The electrochemical performance was evaluated in 3.5% NaCl solution under dark and light environments. The results demonstrated that the TiO₂/CuO heterostructure significantly enhanced electron transfer and suppressed electron-hole recombination, providing adequate photocathodic protection. Notably, under illumination, the TiO₂/CuO (0.005 g) coating achieved a corrosion potential of −255 mV vs SCE and reduced the corrosion current density to 0.460 × 10⁻⁶ mA cm⁻². These findings suggest that TiO₂/CuO coatings offer a promising, durable, and cost-effective solution for corrosion protection in industries such as oil, shipbuilding, and pipelines. Full article

We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction interface is depleted by the buried p-GaN and the conduction channel is closed. Under UV illumination, the depletion region shrinks to just beneath the AlGaN/GaN interface and the 2DEG recovers. The retraction distance of the depletion region during device turn-on operation is comparable to the thickness of the AlGaN barrier layer, which is an order of magnitude smaller than that in the conventional p-GaN/AlGaN/GaN PT, whose retraction distance spans the entire GaN channel layer. Consequently, the proposed device demonstrates significantly enhanced weak-light detection capability and improved switching speed. Silvaco Atlas simulations reveal that under a weak UV intensity of 100 nW/cm², the proposed device achieves a photocurrent density of 1.68 × 10⁻³ mA/mm, responsivity of 8.41 × 10⁵ A/W, photo-to-dark-current ratio of 2.0 × 10⁸, UV-to-visible rejection ratio exceeding 10⁸, detectivity above 1 × 10¹⁹ cm·Hz^1/2/W, and response time of 0.41/0.41 ns. The electron concentration distributions, conduction band variations, and 2DEG recovery behaviors in both the conventional and novel structures under dark and weak UV illumination are investigated in depth via simulations. Full article

Extended shortwave infrared (eSWIR) detectors operating at high temperatures are widely utilized in planetary science. A high-performance eSWIR based on pBin InAs/GaSb/AlSb type-II superlattice (T2SL) grown on a GaSb substrate is demonstrated. It achieves the optimization of the device’s optoelectronic performance by adjusting the p-type doping concentration in the AlAs_0.1Sb_0.9/GaSb barrier. Experimental and TCAD simulation results demonstrate that both the device’s dark current and responsivity grow as the doping concentration rises. Here, the bulk dark current density and bulk differential resistance area are extracted to calculate the bulk detectivity for evaluating the photoelectric performance of the device. When the barrier concentration is 5 × 10¹⁶ cm⁻³, the bulk detectivity is 2.1 × 10¹¹ cm·Hz^1/2/W, which is 256% higher than the concentration of 1.5 × 10¹⁸ cm⁻³. Moreover, at 300 K (−10 mV), the 100% cutoff wavelength of the device is 1.9 μm, the dark current density is 9.48 × 10⁻⁶ A/cm², and the peak specific detectivity is 7.59 × 10¹⁰ cm·Hz^1/2/W (at 1.6 μm). An eSWIR focal plane array (FPA) detector with a 320 × 256 array scale was fabricated for this purpose. It demonstrates a remarkably low blind pixel rate of 0.02% and exhibits an excellent imaging quality at room temperature, indicating its vast potential for applications in infrared imaging. Full article

In this paper, we revisit the extension of the classical non-standard cosmological model in which dissipative processes are considered through a bulk viscous term in the new field $\varphi$, which interacts with the radiation component during the early universe. Specifically, we consider an interaction term of the form ${\Gamma }_{\varphi }{\rho }_{\varphi }$, where ${\Gamma }_{\varphi }$ represents the decay rate of the field and ${\rho }_{\varphi }$ denotes its energy density and a bulk viscosity described by $\xi ={\xi }_0{\rho }_{\varphi }^{1/2}$, within the framework of Eckart’s theory. This extended non-standard cosmology is employed to explore the parameter space for the production of Feebly Interacting Massive Particles (FIMPs) as Dark Matter candidates, assuming a constant thermal averaged Dark Matter production cross-section ($⟨\sigma v⟩$), as well as a preliminary analysis of the non-constant case. In particular, for certain combinations of the model and Dark Matter parameters, namely ($T_{\mathrm{end}}$,$\kappa$) and $(m_{\chi },⟨\sigma v⟩)$, where $T_{\mathrm{end}}$ corresponds to the temperature at which $\varphi$ decays, $\kappa$ is the ratio between the initial energy density of $\varphi$ and radiation, and $m_{\chi }$ is the Dark Matter mass, we identify extensive new parameter regions where Dark Matter can be successfully established while reproducing the currently observed relic density, in contrast to the predictions of $\Lambda$CDM and classical non-standard cosmological scenarios. Full article

Using the Bridgman technique, GaSe single crystals were obtained which were mechanically split into plane-parallel plates with a wide range of thicknesses. By heat treatment in air at 820 °C and 900 °C, for 30 min and 6 h, micro- and nanocomposite layers of Ga₂Se₃–Ga₂O₃ and β–Ga₂O₃ (native oxide) with surfaces made of nanowires/nanoribbons were obtained. The obtained composite Ga₂Se₃–Ga₂O₃ and nanostructured β–Ga₂O₃ are semiconductor materials with band gaps of 2.21 eV and 4.60 eV (gallium oxide) and photosensitivity bands in the green–red and ultraviolet-C regions that peaked at 590 nm and 262 nm. For an applied voltage of 50 V, the dark current in the photodetector based on the nanostructured β–Ga₂O₃ layer was of 8.0 × 10⁻¹³ A and increased to 9.5 × 10⁻⁸ A upon 200 s excitation with 254 nm-wavelength radiation with a power density of 15 mW/cm². The increase and decrease in the photocurrent are described by an exponential function with time constants of τ_1r = 0.92 s, τ_2r = 14.0 s, τ_1d = 2.18 s, τ_2d = 24 s, τ_1r = 0.88 s, τ_2r = 12.2 s, τ_1d = 1.69 s, and τ_2d = 16.3 s, respectively, for the photodetector based on the Ga₂Se₃–Ga₂S₃–GaSe composite. Photoresistors based on the obtained Ga₂Se₃–Ga₂O₃ composite and nanostructured β–Ga₂O₃ layers show photosensitivity bands in the spectral range of electronic absorption bands of ozone in the same green–red and ultraviolet-C regions, and can serve as ozone sensors (detectors). Full article

The variable bandgap and high absorption coefficient of all-inorganic halide perovskite quantum dots (QDs), particularly CsPbBr₂I make them highly promising for photodetector applications. However, their high defect density and poor stability limit their performance. To overcome these problems, Mn²⁺-doped CsPbBr₂I QDs with varying concentrations were synthesized via the one-pot method in this work. By replacing Pb²⁺ ions, moderate Mn²⁺ doping caused lattice contraction and improved crystallinity. At the same time, Mn²⁺-doping effectively passivated surface defects, reducing the defect density by 33%, and suppressed non-radiative recombination, thereby improving photoluminescence (PL) intensity and carrier mobility. The optimized Mn:CsPbBr₂I QDs-based photodetector exhibited superior performance, with a dark current of 1.19 × 10⁻¹⁰ A, a photocurrent of 1.29 × 10⁻⁵ A, a responsivity (R) of 0.83 A/W, a specific detectivity (D*) of 3.91 × 10¹² Jones, an on/off ratio up to 10⁵, and the response time reduced to less than 10 ms, all outperforming undoped CsPbBr₂I QDs devices. Stability tests demonstrated enhanced durability, retaining 80% of the initial photocurrent after 200 s of cycling (compared to 50% for undoped devices) and stable operation over 20 days. This work offers a workable strategy for rational doping and structural optimization in the construction of high-performance perovskite optoelectronic devices. Full article

Antimony selenide (Sb₂Se₃) is an Earth-abundant and non-toxic material that stands out as a promising absorber for the fabrication of thin film solar cells. Despite significant advancements in recent years, all the devices reported in the literature exhibit open-circuit voltages well below the theoretical value. Identifying the factors contributing to this low voltage is an essential step for increasing the efficiency beyond the recently attained 10% milestone and moving closer to the theoretical limit. In this paper, we present the results of an in-depth analysis of a Sb₂Se₃ solar cell in the common superstrate configuration. By making use of current density–voltage characteristic as a function of both temperature and wavelength, capacitance–voltage measurements, and admittance spectroscopy, we ascribe the low open-circuit voltage to the presence of a potential barrier within the absorber material near the junction interface Furthermore, it was observed that the junction behavior in the dark and under illumination changes, which is compatible with the presence of deep electronic levels connected with intrinsic point defects. Full article

Thermal relics with masses in the GeV to TeV range remain possible candidates for the Universe’s dark matter (DM). These neutral particles are often assumed to have vanishing electric and magnetic dipole moments so that they do not interact with single real photons, but the anapole moment, a static electromagnetic property whose features are akin to that of a classical toroidal solenoid, can still be non-zero, permitting interactions with single virtual photons. In some models, DM predominantly annihilates into charged standard model particles through a p-wave process mediated by the anapole moment. The anapole moment is also responsible for another interaction of interest. If a DM medium were subjected to an electric current, a DM particle whose anapole moment was aligned with the current would have lower energy than the state with an antialigned anapole moment. Given these interactions, if a collection of initially unpolarized DM particles were subjected to an electric current, then the DM medium would become partially polarized, according to the Boltzmann distribution. In such a polarized medium, DM annihilation into photons, a subdominant s-wave process realizable through higher order interactions, would be somewhat suppressed. If the local electric current existed during a time in which the DM begins to drop out of thermal equilibrium with the rest of the Universe, the suppressed annihilation could lead to a small local excess in the relic DM density relative to a current-free region. This mechanism by which the local DM density can be perturbed is novel. Using effective interactions to model a DM particle’s anapole moment and polarizabilities (responsible for s-wave annihilation into two photons), we compute the changes in the DM density produced by long- and short-lived currents around freeze out. If we employ the most stringent constraints on DM annihilation into two photons, we find that long-lived currents can result in a fractional change in the DM density on the order of ${10}^{-17}$ for DM masses around 100 GeV; for short-lived currents, this fractional change in local DM density is on the order of ${10}^{-23}$ for the same DM mass. Full article

An HVDC-GIL system with a conical spacer in a radioactive environment is studied in this work using simulated data on COMSOL^® Multiphysics. Electromagnetic simulations on a 2D model were performed with varying ion-pair generation rates and potential applied to the system. This article explores machine learning methods to derive time to steady state, dark current, gas conductivity, and surface charge density expressions. The focus was on constructing symbolic representations, which could be interpretable and less prone to overfitting, using the symbolic regression (SR) and sparse identification of nonlinear dynamics (SINDy) algorithms. The study successfully derived the intended expressions, demonstrating the power of symbolic regression. Predictions of dark currents in the gas–ground electrode interface reported an absolute error and mean absolute percentage error (MAPE) of 1.04 × ${10}^{-4}$ pA and 0.01%, respectively. The solid–ground electrode interface reported an error of 8.99 × ${10}^{-5}$ pA and MAPE of 0.04%, showing strong agreement with simulation data. Expressions for time to steady state had a test error of approximately 110 h with MAPE of around 3%. Steady-state gas conductivity expression achieved an absolute error of 0.55 log(S/m) and MAPE of 1%. An interpretable equation was created with SINDy to model the time evolution of surface charge density, achieving a root mean squared error of 1.12 nC/m²/s across time-series data. These results demonstrate the capability of SR and SINDy to provide interpretable and computationally efficient alternatives to time-consuming numerical simulations of HVDC systems under radiation conditions. While the model provides useful insights, performance and practical applications of the expressions can improve with more diverse datasets, which might include experimental data in the future. Full article

Palladium phthalocyanine (PdPc) and palladium phthalocyanine integrated with tin–zinc oxide (PdPc:SnZnO) were prepared using a simple chemical approach, and their structural and morphological properties were identified using X-ray diffraction, energy dispersive X-ray analysis, scanning electron microscopy, and transmission electron microscopy techniques. The PdPc:SnZnO nanohybrid revealed a polycrystalline structure combining n-type metal oxide SnZnO nanoparticles with p-type organic PdPc molecules. The surface morphology exhibited wrinkled nanofibers decorated with tiny spheres and had a large aspect ratio. The thin film revealed significant optical absorption within the ultraviolet and visible spectra, with narrow band gaps measured at 1.52 eV and 2.60 eV. The electronic characteristics of Al/n-Si/PdPc/Ag and Al/n-Si/PdPc:SnZnO/Ag Schottky diodes were investigated using the current–voltage dependence in both the dark conditions and under illumination. The photodiodes displayed non-ideal behavior with an ideality factor greater than unity. The hybrid diode showed considerably high rectification ratio of 899, quite a low potential barrier, substantial specific photodetectivity, and high enough quantum efficiency, found to be influenced by dopant atoms and the unique topological architecture of the nanohybrid. The capacitance/conductance–voltage dependence measurements revealed the influence of alternative current signals on trapped centers at the interface state, leading to an increase in charge carrier density. Full article

Food safety is gaining increasing attention worldwide. Currently, low-density organic foreign objects such as insects are extremely challenging to detect using conventional metal detectors and X-ray inspection systems. This study aimed to develop a visible-near-infrared single-pixel imaging (Vis-NIR-SPI) method to detect small insects inside food. The advantages of Vis-NIR light include its ability to analyze samples non-destructively and measure multiple components simultaneously and quickly, while SPI is robust against dark noise, high scattering, and high equipment costs. The experimental results demonstrated that (1) the newly designed system effectively reduces scattering effects from the highly scattering sample (intralipid 20%), allowing for the capture of information beyond the capabilities of a charge-coupled-device camera; (2) insects positioned behind ham and bread were readily detectable using the imaging reconstruction algorithm; and (3) even for chocolate samples with very high light absorption, only 1 uncontaminated sample out of 100 was mistakenly classified as contaminated, yielding an overall accuracy of 99%. This high level of accuracy underscores the potential of the Vis-NIR-SPI method to provide reliable detection while maintaining sample integrity. Furthermore, this method is cost-effective, offering a practical and efficient solution to improve quality control processes and consumer trust in the food industry. Full article

It has long been known that the observed mass surface density of cored dark matter (DM) halos is approximately constant, independently of the galaxy mass (i.e., ${\rho }_c{r}_c\simeq \mathrm{constant}$, with ${\rho }_c$ and $r_c$ being the central volume density and the radius of the core, respectively). Here, we review the evidence supporting this empirical fact as well as its theoretical interpretation. It seems to be an emergent law resulting from the concentration–halo mass relation predicted by the current cosmological model, where the DM is made of collisionless cold DM particles (CDM). We argue that the prediction ${\rho }_c{r}_c\simeq \mathrm{constant}$ is not specific to this particular model of DM but holds for any other DM model (e.g., self-interacting) or process (e.g., stellar or AGN feedback) that redistributes the DM within halos conserving its CDM mass. In addition, the fact that ${\rho }_c{r}_c\simeq \mathrm{constant}$ is shown to allow the estimate of the core DM mass and baryon fraction from stellar photometry alone is particularly useful when the observationally expensive conventional spectroscopic techniques are unfeasible. Full article