Search Results (27)

High-Bandwidth Memory (HBM) enables the bandwidth required by modern AI and high-performance computing, yet its three dimensional stack traps heat and amplifies thermo mechanical stress. We first review how conventional solutions such as heat spreaders, microchannels, high density Through-Silicon Vias (TSVs), and Mass Reflow Molded Underfill (MR MUF) underfills lower but do not eliminate the internal thermal resistance that rises sharply beyond 12layer stacks. We then synthesize recent hybrid bonding studies, showing that an optimized Cu pad density, interface characteristic, and mechanical treatments can cut junction-to-junction thermal resistance by between 22.8% and 47%, raise vertical thermal conductivity by up to three times, and shrink the stack height by more than 15%. A meta-analysis identifies design thresholds such as at least 20% Cu coverage that balances heat flow, interfacial stress, and reliability. The review next traces the chain from Coefficient of Thermal Expansion (CTE) mismatch to Cu protrusion, delamination, and warpage and classifies mitigation strategies into (i) material selection including SiCN dielectrics, nano twinned Cu, and polymer composites, (ii) process technologies such as sub-200 °C plasma-activated bonding and Chemical Mechanical Polishing (CMP) anneal co-optimization, and (iii) the structural design, including staggered stack and filleted corners. Integrating these levers suppresses stress hotspots and extends fatigue life in more than 16layer stacks. Finally, we outline a research roadmap combining a multiscale simulation with high layer prototyping to co-optimize thermal, mechanical, and electrical metrics for next-generation 20-layer HBM. Full article

Gallium nitride (GaN), as the core material of third-generation semiconductors, has important applications in high-temperature, high-frequency, and high-power devices, but its polishing process faces many challenges. In this work, a multifield synergistic material removal model is established to study the material removal behaviour by ultrasonic magnetorheological chemical compound polishing (UMCP) of gallium nitride wafers, and the polishing processing under different polishing solution compositions and processing conditions is used to examine the effects of the ultrasonic, chemical, and mechanical effects on the material removal rate. The results show that mechanical removal dominates during UMCP, the chemical enhancement is slightly greater than the ultrasonic action, and the synergistic interaction between the range of factors promotes better removal of the GaN materials. The percentage of mechanical removal by abrasives is about 25% to 44.63%, the mechanical removal by magnetorheological effect polishing pads is about 14.66% to 23.94%, the removal due to chemical action is about 15.52% to 23.41%, the removal due to ultrasonic action is about 11.73% to 14.66%, and the percentage of interactive removal is 6.47% to 14.36%. The abrasive composition significantly enhances the mechanical removal effect, and a higher abrasive concentration correlates to a stronger mechanical removal effect. The concentration of hydrogen peroxide has a superior effect on the chemical reaction, and too high or too low a concentration of hydrogen peroxide weakens the chemical action effect. The results of the study can provide a basis for further research on the material removal mechanism of the GaN UMCP process. Full article

This study establishes a bidirectional kinematic analysis framework for single-sided chemical mechanical polishing systems through innovative coordinate transformation synergies (rotational and translational). To address three critical gaps in existing research, interaction dynamics for both pad–wafer and abrasive–wafer interfaces are systematically derived via 5-inch silicon wafers. Key advancements include (1) the development of closed-form trajectory equations for resolving multibody tribological interactions, (2) vector-based relative velocity quantification with 17 × 17 grid 3D visualization, and (3) first-principle parametric mapping of velocity nonuniformity (NUV = 0–0.42) across 0–80 rpm operational regimes. Numerical simulations reveal two fundamental regimes: near-unity rotational speed ratios (ω_P/ω_C = [0.95, 1) and (1, 1.05]) generate optimal spiral trajectories that achieve 95% surface coverage, whereas integer multiples produce stable relative velocities (1.75 m/s at 60 rpm). Experimental validation demonstrated 0.3 μm/min removal rates with <1 μm nonuniformity under optimized conditions, which was attributable to velocity stabilization effects. The methodology exhibits inherent extensibility to high-speed operations (>80 rpm) and alternative polishing configurations through coordinate transformation adaptability. This work provides a systematic derivation protocol for abrasive trajectory analysis, a visualization paradigm for velocity optimization, and quantitative guidelines for precision process control—advancing beyond current empirical approaches in surface finishing technology. Full article

Chemical mechanical polishing (CMP) is a widely used technique in semiconductor manufacturing to achieve a flat and smooth surface on silicon wafers. A key challenge in CMP is enhancing the material removal rate (MRR) while reducing within-wafer non-uniformity (WIWNU). A computational fluid dynamics (CFD) model is employed to analyze the slurry flow between the wafer and the polishing pad. Several factors influence the CMP process, including the type of abrasives, slurry flow rate, pad patterns, and contact pressure distribution. In this study, two polishing pad patterns with concentric and radial grooves are proposed to address how morphology variations influence wafer removal rate and consistency. Under the same operating conditions, the CFD simulations show that (i) the radial grooves have higher wall shear stress, a more significant negative pressure region, and a more evenly distributed mass on the wafer surface than the concentric grooves, and (ii) the radial grooves exhibit superior slurry mass distribution. It is noted that reducing the negative pressure differential field area results in a less pronounced back-mixing effect. A comparison of radial and concentric polishing pad grooves reveals that radial grooves improve slurry distribution, reduce the slurry saturation time (SST), and increase wall shear stress, leading to higher MRR and improved non-uniformity (NU). Precisely, the errors between the experimental SST values of 21.52 s and 16.06 s for concentric circular and radial groove pads, respectively, and the simulated SST values of 22.23 s and 15.73 s are minimal, at 3.33% and 3.35%. Full article

This study investigates the impact of polycarbonate diol (PCDL)-modified toluene diisocyanate (TDI)-based polyester polyurethane polishing pads on the chemical mechanical polishing of 4H silicon carbide (4H-SiC) substrates. Employing a unique metho, PCDL alters the ratio of polyurethane soft and hard segments, facilitating the one-step synthesis of a polishing pad via chemical foaming. The extent of the reaction of isocyanate groups was characterized by Fourier transform infrared spectroscopy, while the changes in the glass transition temperature of the material before and after modification were evaluated using differential scanning calorimetry. The mechanical properties and surface morphology of the modified pad have been systematically characterized. The results showed that compared with the polyurethane polishing pad without PCDL, tensile strength was augmented by a factor of 2.1, the elastic modulus surged by a factor of 4.2, the elongation at break improved by a factor 1.6, and the wear index decreased by a factor of 0.5 by 40 wt.% PCDL loading. Furthermore, the modified pad demonstrated a 14.5% increase in material removal rate and a reduction in surface roughness of 4H-SiC from 0.124 nm to 0.067 nm. Additionally, the compact surface pore structure and enhanced chemical stability in the strong oxidizing slurry of the modified pad enabled superior polishing performance, achieving an ultrasmooth 4H-SiC surface. The study highlights the potential of tailored polyurethane formulations in enhancing polishing efficiency and surface finish in semiconductor manufacturing processes. Full article

Electro-Fenton chemical mechanical polishing primarily regulates the generation of hydroxyl radicals (·OH) via the Fenton reaction through an applied electric field, which subsequently influences the formation and removal of the oxide layer on the workpiece surface, thereby impacting the overall polishing quality and rate. This study employs Pin–Disk friction and wear experiments to investigate the material removal behavior of single-crystal GaN during electro-Fenton chemical mechanical polishing. Utilizing a range of analytical techniques, including coefficient of friction (COF) curves, surface morphology assessments, cross-sectional analysis, and power spectral density (PSD) measurements on the workpiece surface, we examine the influence of abrasives, polishing pads, polishing pressure, and other parameters on the electro-Fenton chemical–mechanical material removal process. Furthermore, this research provides preliminary insights into the synergistic removal mechanisms associated with the electro-Fenton chemical–mechanical action in single-crystal GaN. The experimental results indicate that optimal mechanical removal occurs when using a W0.5 diamond at a concentration of 1.5 wt% combined with a urethane pad (SH-Q13K-600) under a pressure of 0.2242 MPa. Full article

We investigated the tribological, thermal, kinetic, and surface microtextural characteristics of chemical mechanical polishing (CMP) of 300 mm p-type <100> prime silicon wafers (and their native oxide) at various pressures, sliding velocities, and starting platen temperatures. Results showed the dominant tribological mechanism for both native oxide and silicon polishing to be boundary lubrication. Using frictional data, we pinpointed the exact time that corresponded to the total removal of the native oxide and the onset of silicon polishing. This allowed us to separately characterize removal rates of each layer. For native oxide, while the rate depended on temperature, the presence of a temperature-independent shear force threshold and the low observed rates suggested that its removal by the slurry was dominantly mechanical. In contrast, for silicon polish, the absence of a distinctive shear force threshold and the fact that, for the same set of consumables, rates were more than 200 times larger for silicon than for native oxide suggested a dominantly chemical process with an average apparent activation energy of 0.34 eV. It was further confirmed that rate selectivity between native oxide and PE-TEOS based SiO₂ control wafers was around 1 to 7, which underscored the importance of being able to directly measure native oxide removal rates. In all cases, we achieved excellent post-polish surfaces with S_a and S_q values of below 1 nm. Due to thermal softening of the thermoplastic pad at elevated temperatures, which we confirmed via dynamic mechanical analysis, overall process vibrations were significantly higher when platen heating was employed. Full article

Polyurethane foam (PUF) pads are widely used in semiconductor manufacturing, particularly for chemical mechanical polishing (CMP). This study prepares PUF composites with microcrystalline cellulose (MCC) and nanocrystalline cellulose (NCC) to improve CMP performance. MCC and NCC were characterized using scanning electron microscopy (SEM) and X-ray diffraction (XRD), showing average diameters of 129.7 ± 30.9 nm for MCC and 22.2 ± 6.7 nm for NCC, both with high crystallinity (ca. 89%). Prior to preparing composites, the study on the influence of the postbaked step on the PUF was monitored through Fourier-transform infrared spectroscopy (FTIR). After that, PUF was incorporated with MCC/NCC to afford two catalogs of polyurethane foam composites (i.e., PUFC-M and PUFC-N). These PUFCs were examined for their thermal and surface properties using a differential scanning calorimeter (DSC), thermogravimetric analysis (TGA), dynamic mechanical analyzer (DMA), and water contact angle (WCA) measurements. T_gs showed only slight changes but a notable increase in the 10% weight loss temperature (T_d10%) for PUFCs, rising from 277 °C for PUF to about 298 °C for PUFCs. The value of Tan δ dropped by up to 11%, indicating improved elasticity. Afterward, tensile and abrasion tests were conducted, and we acquired significant enhancements in the abrasion performance (e.g., from 1.04 mm/h for the PUF to 0.76 mm/h for a PUFC-N) of the PUFCs. Eventually, we prepared high-performance PUFCs and demonstrated their capability toward the practical CMP process. Full article

Polyurethane polishing pads are important in chemical mechanical polishing (CMP). Thus, understanding how to decrease the density but increase the porosity is a crucial aspect of improving the efficiency of a polyurethane polishing pad. According to the principle of gas generation by thermal decomposition of sodium bicarbonate and ammonium bicarbonate, polyurethane polishing pad was prepared by a secondary foaming method. The influence of adding such an inorganic foaming agent as an auxiliary foaming agent on the structure, physical properties, and mechanical properties of polyurethane polishing pads was discussed. The results showed that compared with the polyurethane polishing pad without an inorganic foaming agent, the open-pore structure increased, the density decreased, and the porosity and water absorption increased significantly. The highest porosity and material removal rate (MRR) with sodium bicarbonate added was 3.3% higher than those without sodium bicarbonate and 33.8% higher than those without sodium bicarbonate. In addition, the highest porosity and MRR with ammonium bicarbonate were 7.2% higher and 47.8% higher than those without ammonium bicarbonate. Therefore, it was finally concluded that the optimum amount of sodium bicarbonate to be added was 3 wt%, and the optimum amount of ammonium bicarbonate to be added was 1 wt%. Full article

Chemical–mechanical planarization (CMP) is used to smoothen the topographies of a rough surface by combining several functions of tribology (friction, lubrication), chemistry, and electrochemistry (corrosion, wear, tribo-corrosion). The surface layer of interest is structurally weakened by the chemical and/or electrochemical reactions of selected additives in a polishing slurry, and the modified surface is flattened by the abrasion of a polishing pad with or without abrasive particles. The chemically active CMP slurry also serves as a lubricant for polishing and enables planarization at a microscopic level while avoiding the formation of defects at the processed surface. Applications of CMP are wide-ranging in various material-processing technologies and, specifically, it is a critical manufacturing step of integrated circuits. The CMP of metals is a significant part of this processing scheme and is associated with highly complex tribo-electrochemical mechanisms that are now additionally challenging due to various new requirements of the advanced technology nodes. The present review examines the current statuses of experimental strategies for collecting important mechanistic details of metal CMP that are necessary to design and assess CMP consumables. Both traditional and underexplored experimental techniques are discussed with illustrative results, including many previously unpublished findings for certain CMP systems of current interest. Full article

As feature sizes decrease, an investigation of pad unevenness caused by pad conditioning and its influence on chemical mechanical polishing is necessary. We set up a kinematic model to predict the pad wear profile caused by only diamond disk conditioning and verify it. This model shows the influences of different kinematic parameters. To keep the pad surface planar during polishing or only conditioning, we can change the sweep mode and range of the conditioner arm. The kinematic model is suitable for the prediction of the pad wear profile without considering the influence of mechanical parameters. Furthermore, based on the pad wear profile obtained from a real industrial process, we set up a static model to preliminarily investigate the influence of pad unevenness on the pad–wafer contact stress. The pad–wafer contact status in this static model can be approximated as an instantaneous state in a dynamic model. The model shows that the existence of a retaining ring helps to improve the wafer edge profile, and that pad unevenness can cause stress concentration and increase the difficulty in multi-zone pressure control of the polishing head. Full article

4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods. To overcome the material removal bottleneck imposed by aqueous chemistry, a high-efficiency polishing of 4H-SiC wafers method by applying reactive nonaqueous fluids to self-sharpening fixed abrasive pads has been proposed in our former research works. Furthermore, to improve the material removal rate and reduce the surface roughness Sa value of 4H-SiC substrates of the Si face, the effect of organic acid, H₂O₂, and Triton X-100 in nonaqueous slurry on 4H-SiC polishing was investigated. The MRR of 12.83 μm/h and the Sa of 1.45 nm can be obtained by the orthogonally optimized slurry consisting of 3 wt% H₂O₂, 0.5 wt% Triton X-100 at pH = 3. It is also found that the addition of different levels of oxidant H₂O₂ and surfactant Triton X-100 components not only increased the MRR of the 4H-SiC substrates of the Si face but also achieved a lower Sa value; in that, the polishing efficiency of the Si side of the 4H-SiC wafers and the surface quality of the 4H-SiC wafers could be effectively improved by the optimization of the polishing slurry. Full article

In this study, in order to improve and restore the performance of the polishing pads and reduce the cost of chemical mechanical polishing, three types of material polishing pads, namely, polyurethane, damping cloth, and non-woven fabric, were selected for the experiment. Accordingly, each polishing pad was set up with diamond conditioner and high-pressure micro-jet (HPMJ) conditioning control experiments. Subsequently, the fluctuation ranges of the material removal rate on the three polishing pads were 2.73–3.75 μm/h, 1.38–1.99 μm/h, and 2.36–4.32 μm/h, respectively under the HPMJ conditioning method, while the fluctuation ranges of the material removal rate on the three polishing pads were 1.80–4.14 μm/h, 1.02–2.09 μm/h, and 1.78–5.88 μm/h under the diamond conditioning method. Comparing the polishing pad morphologies under SEM, we observed that the surface of the polishing pad after HPMJ conditioning was relatively clean, and the hole structure was not blocked. Contrastingly, there remained numerous abrasive particles on the surface after the conventional diamond conditioning and the hole structure was blocked. Thus, the HPMJ conditioning technology is better than the traditional diamond conditioning technology. Subsequently, the polishing pad after HPMJ conditioning has a longer service life and a more stable material removal rate than that after traditional diamond conditioning. Full article

Chemical mechanical polishing (CMP) technology is one of the key technologies to realize the global planarization of semiconductor wafer surfaces. With the increasing popularity and universality of its application, more and higher requirements are put forward for ultra-precision machining. As an important part of the CMP system, polishing pads occupy a dominant position. In this paper, a self-regressive fixed abrasive polishing pad (SR-FAPP) was prepared by photo-curing. The physical and mechanical properties of the SR-FAPP and the retreat threshold of the abrasive particles on the SR-FAPP were studied. After the CMP of the SiC wafer with a polyurethane polishing pad and the SR-FAPP, it was found that the material removal rate of the former was 75% higher than that of the latter, and the surface roughness of the latter was 75% higher than that of the former. In the micro-morphology, the scratches on the surface of the latter’s polished SiC wafer were obviously reduced, which effectively improved the unevenness of the scratches on the surface of the SiC wafer after polishing, thus providing a reference for the preparation and performance research of the polishing pad. Full article

Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidants in the CMP slurry control the surface oxidation efficiency, while the polishing mechanical force comes from the abrasive particles in the CMP slurry and the pad asperity, which is attributed to the unique pad structure and diamond conditioning. To date, to obtain a high-quality as-CMP SiC wafer, the material removal rate (MRR) of SiC is only a few micrometers per hour, which leads to significantly high operation costs. In comparison, conventional Si CMP has the MRR of a few micrometers per minute. To increase the MRR, improving the oxidation efficiency of SiC is essential. The higher oxidation efficiency enables the higher mechanical forces, leading to a higher MRR with better surface quality. However, the disparity on the Si-face and C-face surfaces of 4H- or 6H-SiC wafers greatly increases the CMP design complexity. On the other hand, integrating hybrid energies into the CMP system has proven to be an effective approach to enhance oxidation efficiency. In this review paper, the SiC wafering steps and their purposes are discussed. A comparison among the three configurations of SiC CMP currently used in the industry is made. Moreover, recent advances in CMP and hybrid CMP technologies, such as Tribo-CMP, electro-CMP (ECMP), Fenton-ECMP, ultrasonic-ECMP, photocatalytic CMP (PCMP), sulfate-PCMP, gas-PCMP and Fenton-PCMP are reviewed, with emphasis on their oxidation behaviors and polishing performance. Finally, we raise the importance of post-CMP cleaning and make a summary of the various SiC CMP technologies discussed in this work. Full article