Search Results (86)

Supercooled large droplets (SLDs), typically defined as droplets with diameters exceeding 100 μm, represent a significant meteorological hazard to aviation safety. Unlike conventional cloud-sized droplets, SLDs have higher inertia and can follow more ballistic trajectories, leading to impingement well aft of leading-edge ice protection systems. SLD icing is further complicated by high-speed splashing, secondary-droplet re-impingement, delayed solidification, and surface water runback. This paper reviews recent progress in understanding SLD impact, splashing, surface water transport, and ice accretion. The review discusses droplet impact on dry and wet surfaces, oblique impingement, ambient-air effects, non-instantaneous solidification, runback dynamics, and downstream ice growth. Emerging ice protection technologies, including superhydrophobic, lubricant-infused, and compliant surfaces, are also evaluated. By synthesizing these developments, this review connects fundamental droplet-impact physics with practical aviation icing challenges and mitigation strategies. Full article

This work investigates the performance improvement of a four-probe ballistic rectifier on bilayer graphene (BLG) through the formation of an energy gap under a perpendicular electric field. For this purpose, exfoliated BLG was deposited on oxidized n⁺-Si and structured into an asymmetric cross junction with 90 nm wide channels. The junction consists of a straight voltage stem (contacts U, L) and slanted current injectors (contacts 1, 2). The differential conductance of the stem, g_UL, as a function of back-gate bias, V_BG, reveals clear indications of energy gap formation and lateral depletion zones at the edges of the channel. The DC characteristic of the ballistic rectifier, V_UL(I₁₂), shows an increase in the output voltage V_UL with increasing V_BG. We attribute this to reduced diffuse scattering at the rough edges when the lateral depletion zones form smooth barriers. Full article

Cosmological filaments, galaxy clusters, and galaxies are magnetized reservoirs of cosmic rays (CRs). The exchange of CRs across these structures is usually modeled assuming that they remain charged and magnetically confined. At high energies, hadronic interactions can convert CR protons to neutrons. This physics is routinely included in air-shower and ultra-high-energy (UHE) CR propagation Monte Carlo simulations used for composition studies but is rarely treated explicitly in propagation models of CR transport and exchange between magnetized reservoirs. CR neutrons are not affected by magnetic fields and can propagate ballistically over kpc-Mpc distances before decaying back into protons, with relativistic time dilation extending their effective decay length. We show how such charged–neutral switching modifies CR confinement and escape in four representative environments: a Milky Way-like galaxy, a starburst galaxy, a galaxy cluster, and a cosmological filament. By solving the transport of a confined CR proton population in each structure using a diffusion/streaming propagation approach with hadronic pp and p$\gamma$ interactions, and treating neutron production and decay as a stochastic Poisson “jump” process, we find that neutron-mediated steps can allow additional CR escape from large-scale cosmological structures at energies where charged-particle transport alone would predict strong CR confinement and attenuation in ambient radiation fields. These effects imply a qualitative shift in how ultra-high-energy CRs are transferred from embedded sources into filaments and voids once intermediate neutron propagation is considered, with consequences for the partitioning of CRs across the large-scale structure of the Universe. Full article

We investigate time-resolved wave-packet transport in monolayer graphene patterned with asymmetric arrays of circular electrostatic scatterers. Using the Dirac continuum model with a split-operator scheme, we track how transmission evolves with scatterer radius and polarity sequence. To this end, we consider three potential configurations (Samples 1–3). The results reveal a geometry-controlled crossover from near-ballistic propagation at small radii to interference-dominated backscattering at large radii. Sample 1, where the potential exhibit two parallel lines of circles, each line sharing the same potential sign, preserves the highest transmission. Conversely, in Sample 3, where potential signs are intercalated between circles of the same line, the dwell time increases, which produces stronger confinement. As the radius increases, pronounced temporal oscillations emerge due to repeated internal reflections (similar to Fabry–Pérot interferometer), and the radius dependence of the saturated transmission probability exhibits anti-resonant dips that are tunable by geometry and potential magnitude. These behaviors establish simple design rules for graphene nanodevices: small-radius Sample 1 for high-throughput transport, Sample 2 (with inverted potential signs as compared to Sample 1) for broadband suppression, and Sample 3 for finely tunable, interference-based confinement. Full article

This study, for the first time, investigates and simulates ballistic-transport-induced avalanche behavior in two-dimensional materials. Using a technology computer-aided design simulation platform, a device model for ballistic avalanche transport is systematically established. By accurately calibrating the material parameters of two-dimensional materials and selecting appropriate physical models, the key features of the ballistic avalanche effect are successfully reproduced, including low threshold voltage and high gain. The simulation results show good agreement with experimental data. Furthermore, mechanism-based analysis is performed to clarify the influence of critical design parameters on the avalanche threshold and multiplication gain. Finally, based on the same physical models and mechanistic understanding, the operational paradigm and performance of ballistic-transport avalanche photodetectors based on two-dimensional materials are predicted. This work provides a reliable theoretical foundation and a robust simulation framework for the optimized design of high-performance and low-power avalanche photon devices. Full article

We present an analytic compact model for p-type cylindrical gate-all-around (GAA) MOSFETs in the quasi-ballistic/ballistic regime, incorporating drain-induced barrier lowering (DIBL). To describe the potential profile, an undetermined parameter is used to represent the channel potential, which is derived from the Laplace equation in the subthreshold region and from Gauss’s law combined with quantum statistics in the inversion region. A smoothing function is applied to this parameter to ensure a continuous source—drain current across all operating regions. The current model is based on the Landauer approach and captures both quasi-ballistic/ballistic transport and quantum-confinement effects. It is validated against non-equilibrium Green’s function (NEGF) simulation results and implemented in Verilog-A for SPICE circuit-level simulation of a CMOS inverter, demonstrating its applicability for nanoscale design. Full article

This work studies the impact of different physical and material parameters on the channel resistance, $R_{ch}$, and threshold voltage, $V_{th}$, of nanowire field-effect transistors (NWFETs). In particular, by means of detailed numerical simulations, we investigate the role of the channel length, nanowire diameter, gate oxide thickness, channel-doping concentration, energy bandgap, oxide thickness, and gate oxide permittivity in a wide range of temperatures (200–500 K). Our findings show that optimal values for both $R_{ch}$ and $V_{th}$ are achieved by reducing the nanowire channel length, as well as by increasing the nanowire diameter and doping concentration. Furthermore, NWFETs benefit from using wide-bandgap materials and thinner oxide layers with a higher permittivity. Notably, in short-channel NWFETs operating under ballistic transport, channel resistance remains nearly constant with temperature, governed by quantum conductance and injection statistics rather than temperature-sensitive scattering. These results underscore the complex interplay between material selection, doping levels, and device geometry in shaping the threshold voltage and the channel resistance of NWFETs. Also, they are useful for enhancing the device stability and advancing the design of NWFETs for the next-generation of nanoscale transistors. Full article

We present a comprehensive first-principles study of nanoribbons made from the α-borophene sheet. This study looks at how edge shape, ribbon width, and magnetic ordering affect their structural, electronic, and transport properties. Ribbons cut along armchair (ac) and zigzag (zz) directions with various edge designs—armchair (a), single (s), and double (d) chains—are all stable. The double chain “dd” edges have the highest binding energies and the lowest edge energies, which aligns with near-bulk coordination. Our analysis of electronic structure and ballistic transport shows strong metallic characteristics in almost all configurations. Only the narrowest “3-ad” ribbon shows a small energy gap that disappears as the width increases. Zigzag ribbons (“zz”) display edge magnetism that depends on width, changing from non-magnetic to antiferromagnetic and finally to ferromagnetic states. Their spin-resolved transmission demonstrates clear spin filtering with polarization exceeding about 40%. Edge passivation affects these properties: hydrogen and fluorine reduce the “zz” edge magnetic moments and spin transport, while oxygen maintains finite magnetism. Near the Fermi level, many ribbons allow for multiple conducting channels. This feature supports low-resistance charge flow even for widths below 10 nm, while higher-energy transmission shows greater dependence on width. These findings position α-borophene nanoribbons as promising one-dimensional components for nanoelectronic connections and spintronic devices, combining high stability, adjustable edge magnetism, and strong metallic conduction. Full article

Carbon nanotube field-effect transistors (CNTFETs) are becoming a strong competitor for the next generation of high-performance, energy-efficient integrated circuits due to their near-ballistic carrier transport characteristics and excellent suppression of short-channel effects. However, CNT FETs with large diameters and small band gaps exhibit obvious bipolarity, and gate-induced drain leakage (GIDL) contributes significantly to the off-state leakage current. Although the asymmetric gate strategy and feedback gate (FBG) structures proposed so far have shown the potential to suppress CNT FET leakage currents, the devices still lack scalability. Based on the analysis of the conduction mechanism of existing self-aligned gate structures, this study innovatively proposed a design strategy to extend the length of the source–drain epitaxial region (L_ext) under a vertically stacked architecture. While maintaining a high drive current, this structure effectively suppresses the quantum tunneling effect on the drain side, thereby reducing the off-state leakage current (I_off = 10⁻¹⁰ A), and has good scaling characteristics and leakage current suppression characteristics between gate lengths of 200 nm and 25 nm. For the sidewall gate architecture, this work also uses single-walled carbon nanotubes (SWCNTs) as the channel material and uses metal source and drain electrodes with good work function matching to achieve low-resistance ohmic contact. This solution has significant advantages in structural adjustability and contact quality and can significantly reduce the off-state current (I_off = 10⁻¹⁴ A). At the same time, it can solve the problem of off-state current suppression failure when the gate length of the vertical stacking structure is 10 nm (the total channel length is 30 nm) and has good scalability. Full article

The Anderson localization of phonons in disordered superlattices has been proposed as a route to suppress thermal conductivity beyond the limits imposed by conventional scattering mechanisms. A commonly used signature of phonon localization is the emergence of the nonmonotonic dependence of thermal conductivity $\kappa$ on system length L, i.e., a $\kappa$-L maximum. However, such behavior has rarely been observed. In this work, we conduct extensive non-equilibrium molecular dynamics (NEMD) simulations, using the LAMMPS package, on both periodic superlattices (SLs) and aperiodic random multilayers (RMLs) constructed from Si/Ge and Lennard-Jones materials. By systematically varying acoustic contrast, interatomic bond strength, and average layer thickness, we examine the interplay between coherent and incoherent phonon transport in these systems. Our two-phonon model decomposition reveals that coherent phonons alone consistently exhibit a strong nonmonotonic $\kappa$-L. This localization signature is often masked by the diffusive, monotonically increasing contribution from incoherent phonons. We further extract the ballistic-limit mean free paths for both phonon types, and demonstrate that incoherent transport often dominates, thereby concealing localization effects. Our findings highlight the importance of decoupling coherent and incoherent phonon contributions in both simulations and experiments. This work provides new insights and design principles for achieving phonon Anderson localization in superlattice structures. Full article

In this article, the role of downscaling in boosting the sensitivity of a novel label-free DNA sensor based on sub-10 nm dielectric-modulated transition metal dichalcogenide field-effect transistors (DM-TMD FET) is presented through a quantum simulation approach. The computational method is based on self-consistently solving the quantum transport equation coupled with electrostatics under ballistic transport conditions. The concept of dielectric modulation was employed as a label-free biosensing mechanism for detecting neutral DNA molecules. The computational investigation is exhaustive, encompassing the band profile, charge density, current spectrum, local density of states, drain current, threshold voltage behavior, sensitivity, and subthreshold swing. Four TMD materials were considered as the channel material, namely, MoS₂, MoSe₂, MoTe₂, and WS₂. The investigation of the scaling capability of the proposed label-free gate-all-around DM-TMDFET-based biosensor showed that gate downscaling is a valuable approach not only for producing small biosensors but also for obtaining high biosensing performance. Furthermore, we found that reducing the device size from 12 nm to 9 nm yields only a moderate improvement in sensitivity, whereas a more aggressive downscaling to 6 nm leads to a significant enhancement in sensitivity, primarily due to pronounced short-channel effects. The obtained results have significant technological implications, showing that miniaturization enhances the sensitivity of the proposed nanobiosensor. Full article

This paper elaborates on the proposal of a new analytical model for a non-ballistic transport scenario for Schottky barrier carbon nanotube field effect transistors (SB-CNTFETs). The non-ballistic transport scenario depends on incorporating the effects of acoustic phonon (A-Ph) and optical phonon (O-Ph) electron scattering mechanisms. The analytical model is rooted in the solution of the Landauer integral equation, which is modified to account for non-ballistic transport through a set of approximations applied to the Wentzel–Kramers–Brillouin (WKB) transmission probability and the Fermi–Dirac distribution function. Our proposed model was simulated to evaluate the total current and transconductance, considering scenarios both with and without the electron–phonon scattering effect. The simulation results revealed a substantial decrease of approximately 78.6% in both total current and transconductance due to electron–phonon scattering. In addition, we investigated the impact of acoustic phonon (A-Ph) and optical phonon (O-Ph) scattering on the drain current under various conditions, including different temperatures, gate lengths, and nanotube chiralities. This comprehensive analysis helps in understanding how these parameters influence device performance. Compared with experimental data, the model’s simulation results demonstrate a high degree of agreement. Furthermore, our fully analytical model achieves a significantly faster runtime, clocking in at around 2.726 s. This validation underscores the model’s accuracy and reliability in predicting the behavior of SB-CNTFETs under non-ballistic conditions. Full article

In this study, we demonstrate that the Sn₂Se₂P₄ monolayer exhibits intrinsic anisotropic electronic characteristics with the strain-synergistic modulation of carrier transport and optoelectronic properties, as revealed by various levels of density functional theory calculations combined with the non-equilibrium Green’s function method. The calculations reveal that a-axis uniaxial compression of the Sn₂Se₂P₄ monolayer induces an indirect-to-direct bandgap transition (from 1.73 eV to 0.97 eV, as calculated by HSE06), reduces the hole effective mass by ≥70%, and amplifies current density by 684%. Conversely, a-axis uniaxial expansion (+8%) boosts ballistic transport (a/b-axis current ratio > 10⁵), rivaling black phosphorus. Notably, a striking negative differential conductance arises with the maximum I_peak/I_valley in the order of 10⁵ under the 2% uniaxial compression along the b-axis of the Sn₂Se₂P₄ monolayer. Visible-range anisotropic absorption coefficients (~10⁵ cm⁻¹) are achieved, where −4% a-axis strain elevates the photocurrent density (6.27 μA mm⁻² at 2.45 eV) and external quantum efficiency (39.2%) beyond many 2D materials benchmarks. Non-monotonic strain-dependent photocurrent density peaks at 2.00 eV correlate with hole effective mass reduction patterns, confirming the carrier mobility of the Sn₂Se₂P₄ monolayer as the governing parameter for photogenerated charge separation. These results establish Sn₂Se₂P₄ as a multifunctional material enabling strain-tailored anisotropy for logic transistors, negative differential resistors, and photovoltaic devices, while guiding future investigations on environmental stabilization and heterostructure integration toward practical applications. Full article

Previous studies of elliptical neutron guides have shown that they transport neutrons with fewer reflections than traditional guides with a constant cross section, thus reducing neutron losses. True elliptical guides, however, are tedious to produce. Therefore, we use the neutron simulation package McStas to investigate the effect of approximating the elliptical shape by linearly tapering guide pieces. The study concerns both simple model guides and a more complex guide system corresponding to that of the BIFROST instrument, currently under construction at the European Spallation Source (ESS). Our results show that it is possible to split a simple elliptical guide into linearly tapering pieces with lengths of up to 3 m, without sacrificing transport properties. We also find that the piecewise tapering guides in some cases will have a slightly higher neutron transfer than the perfectly shaped guides for shorter wavelengths. For a ballistic guide systems with elliptical expanding and focusing sections, and for the BIFROST guide, linearly tapered pieces of 0.5 m can be used with no cost in transport properties or penalties in form of inhomogeneous phase space, but with significantly lower production costs. Full article

Gate dielectrics are essential components in nanoscale field-effect transistors (FETs), but they often face significant instabilities when exposed to harsh environments, such as radioactive conditions, leading to unreliable device performance. In this paper, we evaluate the performance of ultrascaled transition metal dichalcogenide (TMD) FETs equipped with vacuum gate dielectric (VGD) as a means to circumvent oxide-related instabilities. The nanodevice is computationally assessed using a quantum simulation approach based on the self-consistent solutions of the Poisson equation and the quantum transport equation under the ballistic transport regime. The performance evaluation includes analysis of the transfer characteristics, subthreshold swing, on-state and off-state currents, current ratio, and scaling limits. Simulation results demonstrate that the investigated VGD TMD FET, featuring a gate-all-around (GAA) configuration, a TMD-based channel, and a thin vacuum gate dielectric, collectively compensates for the low dielectric constant of the VGD, enabling exceptional electrostatic control. This combination ensures superior switching performance in the ultrascaled regime, achieving a high current ratio and steep subthreshold characteristics. These findings position the GAA-VGD TMD FET as a promising candidate for advanced radiation-hardened nanoelectronics. Full article