Search Results (57)

A comprehensive X-ray topography analysis of two selected aluminum nitride (AlN) bulk crystals is presented. We compare surface inspection X-ray topography in back-reflection geometry with high-energy transmission topography in the Lang and Laue configuration using the monochromatic K_α1 excitation wavelength of copper, silver, and tungsten, respectively. A detailed comparison of the results allows the assessment of both the high- and low-energy X-ray topography methods with respect to performance and structural information, giving essential feedback for crystal growth. This is demonstrated for two selected AlN freestanding faceted crystals up to 8 mm in thickness grown in all directions using the physical vapor transport (PVT) method. Structural defects of all facets of the crystals are determined using the X-ray topography in back-reflection geometry. The mean threading dislocation densities are 480 ± 30 cm⁻² for both crystals of either the Al- or N-face. Clustering of dislocations could be observed. The m-facets show the presence of basal plane dislocations and their accumulation as clusters. The integral transmission topographs of the $10\overline{1}0$ (m-plane) reflection family show that basal plane dislocations of the screw type in ${\displaystyle \frac{1}{3}}⟨\overline{1}2\overline{1}0⟩$ directions decorate threading dislocation clusters. Three-dimensional section transmission topography reveals that the basal plane dislocation clusters mainly originate at the seed boundary and propagate in the ${\displaystyle \frac{1}{3}}⟨\overline{1}2\overline{1}0⟩$ direction along the growth front. In newly laterally grown material, the Borrmann effect has been observed for the first time in PVT-grown bulk AlN, indicating very high structural perfection of the crystalline material in this region. This agrees with a low mean FWHM of 10.6 arcsec of the $10\overline{1}0$ reflection determined through focused high-energy Laue transmission mappings. The latter method also opens the analysis of the $∆2\theta$-shift correlated to the residual stress distribution inside the bulk crystal, which is dominated by dislocation clusters. Contrary to Lang transmission topography, the de-focused high-energy Laue transmission penetrates the 8 mm-thick crystal enabling a defect analysis in the bulk. Full article

An innovative design of a hydrophone based on a piezoelectric composite film of $AlN/S{c}_{0.2}A{l}_{0.8}N$ is presented. By designing a non-uniform composite sensitive layer, the dielectric loss and defect density are significantly reduced, while the high-voltage electrical characteristics of scandium-doped aluminum nitride are retained. X-ray diffraction analysis shows that the sensitive films have excellent crystal quality (FWHM is 0.34°). According to the standard underwater acoustic calibration test, the device exhibits full directivity with a minimum deviation of ±0.5 dB at 1 kHz frequency, sound pressure sensitivity of −162.9 dB (re: 1 V/$\mathsf{\mu }$Pa) and equivalent noise density of 46.1 dB (re: 1 $\mathsf{\mu }$Pa/√Hz). The experimental results show that the comprehensive performance of the piezoelectric heterostructure hydrophone meets the standard of commercial high-end hydrophones while maintaining mechanical stability, and provides a new solution for underwater acoustic sensing. Full article

In order to address the weaknesses of poor corrosion resistance of hydraulic cylinder piston rods, we have developed a surface protection strategy for titanium aluminum nitride coatings by filter cathode vacuum arc (FCVA) technology. The optimization and regulatory mechanism of N₂ flow rate on the microstructure, mechanical, and electrochemical oxidation behaviors have been emphasized. The results indicated that all coatings revealed a nanocrystalline amorphous composite structure dominated by an fcc TiAlN phase. However, the solid solution content, growth orientation, and grain size could be controlled by the nitrogen flow rate, thereby achieving optimized hardness, adhesion strength, corrosion, and oxidation resistance. Specifically, with the increase in the N₂ flow rate, the solid solution content continued to rise, while the crystal orientation transformed from the (111) to the (200) plane, and the grain size initially increased and then decreased. As a result, mechanical properties, including hardness, toughness, resistance to plastic deformation, and adhesion strength, displayed a trend of initially increasing and then decreasing. The corrosion failure of coatings was linked to surface defects controlled by the N₂ flow rate, rather than the composition and phase structure. The coating displayed superior corrosion resistance at low N₂ flow rates due to fewer macroscopic particles and pore defects. This study provides valuable insights into the corrosion behavior of an aluminum titanium nitrogen coating, providing crucial guidance for coating design in harsh environments. Full article

High-quality 2-inch aluminum nitride (AlN) crystals were grown using a double-zone resistance heating system, and the growth mechanism of AlN bulk crystals was further investigated. It was found that during the growth process, the vapor pressure at the growth interface, as well as the quality and structure of the seed crystal, was closely related to the growth conditions. The 2-inch AlN crystals were characterized using high-resolution X-ray diffraction (HRXRD) and optical microscopy. Optical microscopy observations of different regions on the native surface of the crystals revealed several morphologies, including regular step flow, irregular step flow, and domain-like structures. Comparisons showed that areas of the crystal surface with regular step-flow morphology exhibited high crystal quality, whereas the crystal quality decreased progressively as the step-flow morphology diminished. Therefore, the crystal quality can be preliminarily assessed through the surface morphology, providing guidance for improving the crystal growth process. Full article

Aluminum nitride (AlN)-based ferroelectric films offer significant advantages, including compatibility with CMOS back-end processes, potential for sustainable miniaturization, and intrinsic stability in the ferroelectric phase. As promising emerging materials, they have attracted considerable attention for their broad application potential in nonvolatile ferroelectric memories. However, several key scientific and technological challenges remain, including the preparation of single-crystal materials, epitaxial growth, and doping, which hinder their progress in critical ferroelectric devices. To accelerate their development, further research is needed to elucidate the underlying physical mechanisms, such as growth dynamics and ferroelectric properties. This paper provides a comprehensive review of the preparation methods of AlN-based ferroelectric films, covering AlN, Al_1−xSc_xN, Al_1−xB_xN, Y_xAl_1−xN, and Sc_xAl_yGa_1−x−yN. We systematically analyze the similarities, differences, advantages, and limitations of various growth techniques. Furthermore, the ferroelectric properties of AlN and its doped variants are summarized and compared. Strategies for enhancing the ferroelectric performance of AlN-based films are discussed, with a focus on coercive field regulation under stress, suppression of leakage current, fatigue mechanism, and long-term stability. Then, a brief overview of the wide range of applications of AlN-based thin films in electronic and photonic devices is presented. Finally, the challenges associated with the commercialization of AlN-based ferroelectrics are presented, and critical issues for future research are outlined. By synthesizing insights on growth methods, ferroelectric properties, enhancement strategies, and applications, this review aims to facilitate the advancement and practical application of AlN-based ferroelectric materials and devices. Full article

The focus of this study was the investigation of how the total pressure of reactants and ammonia flow rate influence the growth morphology of aluminum–gallium nitride layers crystallized by Halide Vapor Phase Epitaxy. It was established how these two critical parameters change the supersaturation levels of gallium and aluminum in the growth zone, and subsequently the morphology of the produced layers. A halide vapor phase epitaxy reactor built in-house was used, allowing for precise control over the growth conditions. Results demonstrate that both total pressure and ammonia flow rate significantly affect the nucleation and crystal growth processes which have an impact on the alloy composition, surface morphology and structural quality of aluminum–gallium nitride layers. Reducing the total pressure and adjusting the ammonia flow rate led to a notable enhancement in the homogeneity and crystallographic quality of the grown layers, along with increased aluminum incorporation. This research contributes to a deeper understanding of the growth mechanisms involved in the halide vapor phase epitaxy of aluminum–gallium nitride, and furthermore it suggests a trajectory for the optimization of growth parameters so as to obtain high-quality materials for advanced optoelectronic and electronic applications. Full article

Wurtzite aluminum nitride (AlN) crystal has a non-centrosymmetric crystal structure with only a single axis of symmetry. In an AlN crystal, the electronegativity difference between the Al atom and N atom leads to a distortion of electron cloud distribution outside the nucleus and a spontaneous polarization (SP) along the c-axis direction. The N-polar surface along the directions of [000-1] has higher surface energy than the Al-polar surface along the directions of [0001]. Due to the different atomic arrangement, Al atoms on the Al-polar surface bond with O and OH⁻ in the environment to generate Al₂O₃·xH₂O, which prevents the reaction from occurring inside the crystal. After the Al₂O₃·xH₂O dissolve in an alkaline environment, N atoms have three dangling bonds exposed on the surface, which can also protect OH⁻ from destroying the internal Al-N bonds, so the Al-polar surface is more stable than the N-polar surface. Full article

Aluminum nitride (AlN) crystals with areas ranging from 1 mm² to 2 mm² were successfully grown through spontaneous nucleation at 1700 °C using a modified vapor transport method. In this approach, Cu–Al alloy served as the source of aluminum (Al), and nitrogen (N₂) was employed as the nitrogen source. The morphology and crystalline quality of the AlN crystals were characterized by a stereo microscope, Raman spectrometer, photoluminescence (PL) and secondary-ion mass spectrometry (SIMS). Deposited on the graphite lid, the as-grown AlN crystals exhibited both rectangular and hexagonal shapes, identified as m-plane and c-plane AlN, respectively, based on Raman spectroscopy. The full width half maximum (FWHM) values of E₂ (high) for the rectangular and hexagonal grains were measured to be 6.00 cm⁻¹ and 6.06 cm⁻¹, respectively, indicating high crystalline quality. However, PL and SIMS analysis indicated the presence of impurities associated with oxygen in the crystals. This paper elucidates the growth mechanism of the modified vapor transport method and highlights the role of the Cu–Al alloy in sustaining reactions at lower temperatures. The addition of copper (Cu) not only facilitates sustainable reactions, but also provides a novel perspective for the growth of AlN single crystals. Full article

Aluminum Nitride (AlN) is a promising piezoelectric material for microelectromechanical systems owing to its attractive physical and chemical properties and CMOS compatibility. It has a moderate piezo response compared to its rival material bound to its wide application. This obstacle can be overcome by doping or alloying. Sc alloying increases the piezo response of AlN up to four-fold; it also increases the electromechanical coupling coefficient, which is a prominent figure of merit for any MEMS device application. Sc doping induces elastic softening in wurtzite AlN, enhances polarization, and increases piezoelectric constants. However, the possibility of phase separation at higher Sc concentrations, and the wurtzite phase of AlN, which is responsible for piezoelectricity, becomes negligible. Therefore, knowing the optimum concentration of Sc for device applications is necessary. In this work, using density functional theory, we calculated the lattice parameter, band and density of states along with the physical properties such as Young’s modulus, the bulk modulus, Poisson’s ratio, and elastic constants of pristine AlN and Sc doped AlN. The DFT calculations show that the geometrical optimized lattice parameters agree with the literature. As a function of increased Sc concentration, the calculated Young’s modulus and elastic constants decrease, indicating a decrease in hardness and elastic softening, respectively. Meanwhile, the bulk modulus and Poisson’s ratio increase with an increase in Sc concentration, representing an increase in the crystal cell parameters and elastic deformation. AlN and AlScN thin films were grown on Si (111) substrate using magnetron sputtering to study the structural properties experimentally. The deposited films show the required c-axis (002) preferential crystallographic orientation. The XRD peaks of Sc doped AlN thin films have shifted to a lower angle than pristine AlN, indicating elastic softening/tensile stress in grown thin films. So, from our observation, we can conclude that Sc doping induces elastic softening in AlN and deposited films have a preferential crystallographic orientation that can be applied in MEMS devices. Full article

The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the AlN epilayer, two AlN-thick epi-film samples were grown on c-plane sapphire substrates. The optical and structural characteristics of AlN films are meticulously examined by using high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), a dual-beam ultraviolet-visible spectrophotometer, and spectroscopic ellipsometry (SE). It has been found that the quality of AlN can be controlled by adjusting the AlN film thickness. The phenomenon, in which the thicker AlNn film exhibits lower dislocations than the thinner one, demonstrates that thick AlN epitaxial samples can work as a strain relief layer and, in the meantime, help significantly bend the dislocations and decrease total dislocation density with the thicker epi-film. The Urbach’s binding energy and optical bandgap (E_g) derived by optical transmission (OT) and SE depend on crystallite size, crystalline alignment, and film thickness, which are in good agreement with XRD and SEM results. It is concluded that under the treatment of thickening film, the essence of crystal quality is improved. The bandgap energies of AlN samples obtained from SE possess larger values and higher accuracy than those extracted from OT. The Bose–Einstein relation is used to demonstrate the bandgap variation with temperature, and it is indicated that the thermal stability of bandgap energy can be improved with an increase in film thickness. It is revealed that when the thickness increases to micrometer order, the thickness has little effect on the change of E_g with temperature. Full article

This work examines the effects of the formation of impurity inclusions in the structure of NiAl₂O₄ ceramics when aluminum nitride is added to them and the occurrence of a reinforcement effect that prevents hydrogenation processes and the subsequent destruction of conductive and thermophysical characteristics. The appeal of ceramics possessing a spinel crystal structure lies in their potential use as ceramic fuel cells for both hydrogen generation and storage. Simultaneously, addressing the challenges related to ceramic degradation during hydrogenation, a critical aspect of hydrogen production, can enhance the efficiency of these ceramics while lowering electricity production costs. The selection of aluminum nitride as an additive for ceramic modification is based on its remarkable resistance to structural damage accumulation, its potential to enhance resistance to high-temperature degradation, and its ability to bolster strength properties. Moreover, an examination of the alterations in the strength characteristics of the examined samples subjected to hydrogenation reveals that the stability of two-phase ceramics is enhanced by more than three to five times compared to the initial ceramics (those without the addition of AlN). Additionally, it was noted that the most significant alterations in both structure and strength become apparent at irradiation fluences exceeding 10¹⁴ proton/cm², where atomic displacements in the damaged ceramic layer reach over 5 dpa. During the evaluation of thermophysical properties, it was discerned that ceramics featuring an impurity phase in their composition exhibit the highest stability. These ceramics demonstrated a reduction in the thermal conductivity coefficient of less than 1% at the peak irradiation fluence. Full article

In this study, we conducted research on manufacturing molybdenum (Mo) thin films by a thermal atomic layer deposition method using solid MoO₂Cl₂ as a precursor. Mo thin films are widely used as gate electrodes and electrodes in metal-oxide semiconductor field-effect transistors. Tungsten (W) has primarily been used as a conventional gate electrode, but it suffers from reduced resistivity due to the residual fluorine component generated from the deposition process. Thus, herein, we developed a Mo thin film with low resistivity that can substitute W. The MoO₂Cl₂ precursor used to deposit the Mo thin film exists in a solid state. For solid precursors, the vapor pressure does not remain constant compared to that of liquid precursors, thereby making it difficult to set process conditions. Furthermore, the use of solid precursors at temperatures 600 °C and above has many limitations. Herein, H₂ was used as the reactive gas for the deposition of Mo thin films, and the deposition temperature was increased to 650 °C, which was the maximum processing temperature of the aluminum nitride heater. Additionally, deposition rate, resistivity change, and surface morphology characteristics were compared. While resistivity decreased to 12.9 μΩ∙cm with the increase of deposition temperature from 600 °C to 650 °C, surface roughness (Rq) was increased to 0.560 nm with step coverage of 97%. X-ray diffraction analysis confirmed the crystallization change in the Mo thin film with increasing process temperature, and a certain thickness of the seed layer was required for nucleation on the initial wafer of the Mo thin film. Thus, the molybdenum nitride thin film was deposited after the 4 nm deposition of Mo thin film. This study confirmed that crystallinity of Mo thin films must be increased to reduce their resistivity and that a seed layer for initial nucleation is required. Full article

Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N₂/H₂ plasma were utilized as Al and N precursors, respectively. The properties of AlN thin films grown on various substrates were comparatively analyzed. The investigation revealed that the as-grown AlN thin films exhibit a hexagonal wurtzite structure with preferred c-axis orientation and were polycrystalline, regardless of the substrates. The sharp AlN/substrate interfaces of the as-grown AlN are indicated by the clearly resolved Kiessig fringes measured through X-ray reflectivity. The surface morphology analysis indicated that the AlN grown on sapphire displays the largest crystal grain size and surface roughness value. Additionally, AlN/Si (100) shows the highest refractive index at a wavelength of 532 nm. Compared to AlN/sapphire, AlN/Si has a lower wavelength with an extinction coefficient of zero, indicating that AlN/Si has higher transmittance in the visible range. Overall, the study offers valuable insights into the properties of AlN thin films and their potential applications in optoelectronic devices, and provides a new technical idea for realizing high-quality AlN thin films with sharp AlN/substrate interfaces and smooth surfaces. Full article

Aluminum nitride (AlN) thin film/molybdenum (Mo) electrode structures are typically required in microelectromechanical system applications. However, the growth of highly crystalline and c-axis-oriented AlN thin films on Mo electrodes remains challenging. In this study, we demonstrate the epitaxial growth of AlN thin films on Mo electrode/sapphire (0001) substrates and examine the structural characteristics of Mo thin films to determine the reason contributing to the epitaxial growth of AlN thin films on Mo thin films formed on sapphire. Two differently oriented crystals are obtained from Mo thin films grown on sapphire substrates: (110)- and (111)-oriented crystals. The dominant (111)-oriented crystals are single-domain, and the recessive (110)-oriented crystals comprise three in-plane domains rotated by 120° with respect to each other. The highly ordered Mo thin films formed on sapphire substrates serve as templates for the epitaxial growth by transferring the crystallographic information of the sapphire substrates to the AlN thin films. Consequently, the out-of-plane and in-plane orientation relationships among the AlN thin films, Mo thin films, and sapphire substrates are successfully defined. Full article

Aluminum gallium nitride (AlGaN) is a nanohybrid semiconductor material with a wide bandgap, high electron mobility, and high thermal stability for various applications including high-power electronics and deep ultraviolet light-emitting diodes. The quality of thin films greatly affects their performance in applications in electronics and optoelectronics, whereas optimizing the growth conditions for high quality is a great challenge. Herein, we have investigated the process parameters for the growth of AlGaN thin films via molecular dynamics simulations. The effects of annealing temperature, the heating and cooling rate, the number of annealing rounds, and high temperature relaxation on the quality of AlGaN thin films have been examined for two annealing modes: constant temperature annealing and laser thermal annealing. Our results reveal that for the mode of constant temperature annealing, the optimum annealing temperature is much higher than the growth temperature in annealing at the picosecond time scale. The lower heating and cooling rates and multiple-round annealing contribute to the increase in the crystallization of the films. For the mode of laser thermal annealing, similar effects have been observed, except that the bonding process is earlier than the potential energy reduction. The optimum AlGaN thin film is achieved at a thermal annealing temperature of 4600 K and six rounds of annealing. Our atomistic investigation provides atomistic insights and fundamental understanding of the annealing process, which could be beneficial for the growth of AlGaN thin films and their broad applications. Full article