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Keywords = W-band filter

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20 pages, 10013 KiB  
Article
Addressing Challenges in Rds,on Measurement for Cloud-Connected Condition Monitoring in WBG Power Converter Applications
by Farzad Hosseinabadi, Sachin Kumar Bhoi, Hakan Polat, Sajib Chakraborty and Omar Hegazy
Electronics 2025, 14(15), 3093; https://doi.org/10.3390/electronics14153093 - 2 Aug 2025
Viewed by 124
Abstract
This paper presents the design, implementation, and experimental validation of a Condition Monitoring (CM) circuit for SiC-based Power Electronics Converters (PECs). The paper leverages in situ drain–source resistance (Rds,on) measurements, interfaced with cloud connectivity for data processing and lifetime assessment, [...] Read more.
This paper presents the design, implementation, and experimental validation of a Condition Monitoring (CM) circuit for SiC-based Power Electronics Converters (PECs). The paper leverages in situ drain–source resistance (Rds,on) measurements, interfaced with cloud connectivity for data processing and lifetime assessment, addressing key limitations in current state-of-the-art (SOTA) methods. Traditional approaches rely on expensive data acquisition systems under controlled laboratory conditions, making them unsuitable for real-world applications due to component variability, time delay, and noise sensitivity. Furthermore, these methods lack cloud interfacing for real-time data analysis and fail to provide comprehensive reliability metrics such as Remaining Useful Life (RUL). Additionally, the proposed CM method benefits from noise mitigation during switching transitions by utilizing delay circuits to ensure stable and accurate data capture. Moreover, collected data are transmitted to the cloud for long-term health assessment and damage evaluation. In this paper, experimental validation follows a structured design involving signal acquisition, filtering, cloud transmission, and temperature and thermal degradation tracking. Experimental testing has been conducted at different temperatures and operating conditions, considering coolant temperature variations (40 °C to 80 °C), and an output power of 7 kW. Results have demonstrated a clear correlation between temperature rise and Rds,on variations, validating the ability of the proposed method to predict device degradation. Finally, by leveraging cloud computing, this work provides a practical solution for real-world Wide Band Gap (WBG)-based PEC reliability and lifetime assessment. Full article
(This article belongs to the Section Industrial Electronics)
22 pages, 6689 KiB  
Article
Design and Implementation of a Sun Outage Simulation System with High Uniformity and Stray Light Suppression Capability
by Zhen Mao, Zhaohui Li, Yong Liu, Limin Gao and Jianke Zhao
Sensors 2025, 25(15), 4655; https://doi.org/10.3390/s25154655 - 27 Jul 2025
Viewed by 354
Abstract
To enable accurate evaluation of satellite laser communication terminals under solar outage interference, this paper presents the design and implementation of a solar radiation simulation system targeting the 1540–1560 nm communication band. The system reconstructs co-propagating interference conditions through standardized and continuously tunable [...] Read more.
To enable accurate evaluation of satellite laser communication terminals under solar outage interference, this paper presents the design and implementation of a solar radiation simulation system targeting the 1540–1560 nm communication band. The system reconstructs co-propagating interference conditions through standardized and continuously tunable output, based on high irradiance and spectral uniformity. A compound beam homogenization structure—combining a multimode fiber and an apodizator—achieves 85.8% far-field uniformity over a 200 mm aperture. A power–spectrum co-optimization strategy is introduced for filter design, achieving a spectral matching degree of 78%. The system supports a tunable output from 2.5 to 130 mW with a 50× dynamic range and maintains power control accuracy within ±0.9%. To suppress internal background interference, a BRDF-based optical scattering model is established to trace primary and secondary stray light paths. Simulation results show that by maintaining the surface roughness of key mirrors below 2 nm and incorporating a U-shaped reflective light trap, stray light levels can be reduced to 5.13 × 10−12 W, ensuring stable detection of a 10−10 W signal at a 10:1 signal-to-background ratio. Experimental validation confirms that the system can faithfully reproduce solar outage conditions within a ±3° field of view, achieving consistent performance in spectrum shaping, irradiance uniformity, and background suppression. The proposed platform provides a standardized and practical testbed for ground-based anti-interference assessment of optical communication terminals. Full article
(This article belongs to the Section Communications)
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13 pages, 3381 KiB  
Article
A 40 GHz High-Image-Rejection LNA with a Switchable Transformer-Based Notch Filter in 65 nm CMOS
by Yutong Guo and Jincai Wen
Micromachines 2025, 16(6), 676; https://doi.org/10.3390/mi16060676 - 31 May 2025
Viewed by 570
Abstract
This article presents a low-noise amplifier (LNA) with high image rejection ratio (IRR) operating in the 5G millimeter-wave band using a 65 nm CMOS process. The circuit adopts an inter-stage notch filtering structure composed of a transformer and a switched capacitor array to [...] Read more.
This article presents a low-noise amplifier (LNA) with high image rejection ratio (IRR) operating in the 5G millimeter-wave band using a 65 nm CMOS process. The circuit adopts an inter-stage notch filtering structure composed of a transformer and a switched capacitor array to achieve image suppression and impedance matching with no die area overhead. By adjusting the values of the switch capacitor array, the transmission zeros are positioned in the stopband while the poles are placed in the passband, thereby realizing image rejection. Furthermore, the number and distribution of poles under the both real and complex impedance conditions are analyzed. Moreover, the quality factor (Q) of the zero is derived to establish the relationship between Q and the image rejection ratio, guiding the optimization of both gain and IRR of the circuit design. Measurement results demonstrate that the LNA exhibits a gain of 18 dB and a noise figure (NF) of 4.4 dB at 40 GHz, with a corresponding IRR of 53.4 dB when the intermediate frequency (IF) is 6 GHz. The circuit demonstrates a 3 dB bandwidth from 36.3 to 40.7 GHz, with an IRR greater than 42 dB across this frequency range. The power consumption is 25.4 mW from a 1 V supply, and the pad-excluded core area of the entire chip is 0.13 mm². Full article
(This article belongs to the Special Issue RF and Power Electronic Devices and Applications)
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21 pages, 5595 KiB  
Article
A Compact and Tunable Active Inductor-Based Bandpass Filter with High Dynamic Range for UHF Band Applications
by Sehmi Saad, Fayrouz Haddad and Aymen Ben Hammadi
Sensors 2025, 25(10), 3089; https://doi.org/10.3390/s25103089 - 13 May 2025
Viewed by 700
Abstract
This paper presents a fully integrated bandpass filter (BPF) with high tunability based on a novel differential active inductor (DAI), designed for sensor interface circuits operating in the ultra-high frequency (UHF) band. The design of the proposed DAI is based on a symmetrical [...] Read more.
This paper presents a fully integrated bandpass filter (BPF) with high tunability based on a novel differential active inductor (DAI), designed for sensor interface circuits operating in the ultra-high frequency (UHF) band. The design of the proposed DAI is based on a symmetrical configuration, utilizing a differential amplifier for the feedforward transconductance and a common-source (CS) transistor for the feedback transconductance. By integrating a cascode scheme with a feedback resistor, the quality factor of the active inductor is significantly improved, leading to enhanced mid-band gain for the bandpass filter. To facilitate independent tuning of the BPF‘s center frequency and mid-band gain, an active resistor adjustment and bias voltage control are employed, providing precise control over the filter’s operational parameters. Post-layout simulations and process corner results are conducted with 0.13 µm CMOS technology at 1.2 V supply voltage. The proposed second order BPF achieves a broad tuning range of 280 MHz to 2.426 GHz, with a passband gain between 8.9 dB and 16.54 dB. The design demonstrates a maximum noise figure of 16.54 dB at 280 MHz, an input-referred 1 dB compression point of −3.78 dBm, and a third-order input intercept point (IIP3) of −0.897 dBm. Additionally, the BPF occupies an active area of only 68.2×30 µm2, including impedance-matching part, and consumes a DC power of 14–20 mW. The compact size and low power consumption of the design make it highly suitable for integration into modern wireless sensor interfaces where performance and area efficiency are critical. Full article
(This article belongs to the Special Issue Feature Papers in Electronic Sensors 2025)
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21 pages, 1565 KiB  
Article
A KWS System for Edge-Computing Applications with Analog-Based Feature Extraction and Learned Step Size Quantized Classifier
by Yukai Shen, Binyi Wu, Dietmar Straeussnigg and Eric Gutierrez
Sensors 2025, 25(8), 2550; https://doi.org/10.3390/s25082550 - 17 Apr 2025
Viewed by 844
Abstract
Edge-computing applications demand ultra-low-power architectures for both feature extraction and classification tasks. In this manuscript, a Keyword Spotting (KWS) system tailored for energy-constrained portable environments is proposed. A 16-channel analog filter bank is employed for audio feature extraction, followed by a digital Gated [...] Read more.
Edge-computing applications demand ultra-low-power architectures for both feature extraction and classification tasks. In this manuscript, a Keyword Spotting (KWS) system tailored for energy-constrained portable environments is proposed. A 16-channel analog filter bank is employed for audio feature extraction, followed by a digital Gated Recurrent Unit (GRU) classifier. The filter bank is behaviorally modeled, making use of second-order band-pass transfer functions, simulating the analog front-end (AFE) processing. To enable efficient deployment, the GRU classifier is trained using a Learned Step Size (LSQ) and Look-Up Table (LUT)-aware quantization method. The resulting quantized model, with 4-bit weights and 8-bit activation functions (W4A8), achieves 91.35% accuracy across 12 classes, including 10 keywords from the Google Speech Command Dataset v2 (GSCDv2), with less than 1% degradation compared to its full-precision counterpart. The model is estimated to require only 34.8 kB of memory and 62,400 multiply–accumulate (MAC) operations per inference in real-time settings. Furthermore, the robustness of the AFE against noise and analog impairments is evaluated by injecting Gaussian noise and perturbing the filter parameters (center frequency and quality factor) in the test data, respectively. The obtained results confirm a strong classification performance even under degraded circuit-level conditions, supporting the suitability of the proposed system for ultra-low-power, noise-resilient edge applications. Full article
(This article belongs to the Section Intelligent Sensors)
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20 pages, 8423 KiB  
Article
Design and Implementation of a Low-Power Biopotential Amplifier in 28 nm CMOS Technology with a Compact Die-Area of 2500 μm2 and an Ultra-High Input Impedance
by Esmaeil Ranjbar Koleibi, William Lemaire, Konin Koua, Maher Benhouria, Reza Bostani, Mahziar Serri Mazandarani, Luis-Philip Gauthier, Marwan Besrour, Jérémy Ménard, Mahdi Majdoub, Benoit Gosselin, Sébastien Roy and Réjean Fontaine
Sensors 2025, 25(7), 2320; https://doi.org/10.3390/s25072320 - 5 Apr 2025
Viewed by 1105
Abstract
Neural signal recording demands compact, low-power, high-performance amplifiers, to enable large-scale, multi-channel electrode arrays. This work presents a bioamplifier optimized for action potential detection, designed using TSMC 28 nm HPC CMOS technology. The amplifier integrates an active low-pass filter, eliminating bulky DC-blocking capacitors [...] Read more.
Neural signal recording demands compact, low-power, high-performance amplifiers, to enable large-scale, multi-channel electrode arrays. This work presents a bioamplifier optimized for action potential detection, designed using TSMC 28 nm HPC CMOS technology. The amplifier integrates an active low-pass filter, eliminating bulky DC-blocking capacitors and significantly reducing the size and power consumption. It achieved a high input impedance of 105.5 GΩ, ensuring minimal signal attenuation. Simulation and measurement results demonstrated a mid-band gain of 58 dB, a −3 dB bandwidth of 7 kHz, and an input-referred noise of 11.1 μVrms, corresponding to a noise efficiency factor (NEF) of 8.4. The design occupies a compact area of 2500 μm2, making it smaller than previous implementations for similar applications. Additionally, it operates with an ultra-low power consumption of 3.4 μW from a 1.2 V supply, yielding a power efficiency factor (PEF) of 85 and an area efficiency factor of 0.21. These features make the proposed amplifier well suited for multi-site in-skull neural recording systems, addressing critical constraints regarding miniaturization and power efficiency. Full article
(This article belongs to the Special Issue (Bio)sensors for Physiological Monitoring)
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18 pages, 6465 KiB  
Article
0.5-V High-Order Universal Filter for Bio-Signal Processing Applications
by Montree Kumngern, Fabian Khateb, Tomasz Kulej and Somkiat Lerkvaranyu
Appl. Sci. 2025, 15(7), 3969; https://doi.org/10.3390/app15073969 - 3 Apr 2025
Viewed by 413
Abstract
In this paper, a novel multiple-input operational transconductance amplifier (MI-OTA) is proposed. The MI-OTA can be obtained by using the multiple-input bulk-driven MOS transistor (MIBD MOST) technique. The circuit structure is simple, can operate with a supply voltage of 0.5 V, and consumes [...] Read more.
In this paper, a novel multiple-input operational transconductance amplifier (MI-OTA) is proposed. The MI-OTA can be obtained by using the multiple-input bulk-driven MOS transistor (MIBD MOST) technique. The circuit structure is simple, can operate with a supply voltage of 0.5 V, and consumes 937 pW at a current setting of 625 pA. The proposed MI-OTA was used to implement a high-order multiple-input voltage-mode universal filter. The proposed filter can provide non-inverting and inverting low-pass, high-pass, band-pass, band-stop, and all-pass transfer functions to the same topology. In addition, it has a high input impedance and does not need any inverted input signals, so there is no additional buffering circuit. The proposed filter can be used for biological signal processing. The proposed MI-OTA and the second-order universal filter were simulated in Cadence using CMOS process parameters of 0.18 μm from TSMC to verify the functionality and performance of the new structures. Full article
(This article belongs to the Section Electrical, Electronics and Communications Engineering)
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17 pages, 3785 KiB  
Article
Novel Multiple-Input Single-Output Shadow Filter with Improved Passband Gain Using Multiple-Input Multiple-Output DDTAs
by Montree Kumngern, Fabian Khateb and Tomasz Kulej
Electronics 2025, 14(7), 1417; https://doi.org/10.3390/electronics14071417 - 31 Mar 2025
Viewed by 329
Abstract
This paper presents a multiple-input single-output (MISO) shadow filter implemented using multiple-input differential difference transconductance amplifiers (MI-DDTAs). The MI-DDTA’s multiple inputs are realized through the multiple-input bulk-driven MOS transistor (MI-BD MOST) technique. Leveraging the multiple-input capability of the DDTA, various filter responses—low-pass filter [...] Read more.
This paper presents a multiple-input single-output (MISO) shadow filter implemented using multiple-input differential difference transconductance amplifiers (MI-DDTAs). The MI-DDTA’s multiple inputs are realized through the multiple-input bulk-driven MOS transistor (MI-BD MOST) technique. Leveraging the multiple-input capability of the DDTA, various filter responses—low-pass filter (LPF), high-pass filter (HPF), band-pass filter (BPF), band-stop filter (BSF), and all-pass filter (APF)—can be efficiently achieved by appropriately configuring the input signals. The natural frequency and quality factor of the shadow filter can be independently tuned using external amplifiers. Unlike conventional shadow filters, where adjusting the quality factor or natural frequency impacts the passband gain, this design ensures a constant unity passband gain. The MI-DDTA operates at a supply voltage of 0.5 V and consumes 385.8 nW of power for setting current Iset = 14 nA. The proposed MI-DDTA and shadow filter are designed and validated through simulations in the Cadence design environment, using a 0.18 µm CMOS process provided by TSMC (Taiwan Semiconductor Manufacturing Company Limited). Full article
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15 pages, 6315 KiB  
Article
A 328 nW, 0.45 V Current Differencing Transconductance Amplifier and Its Application in a Current-Mode Universal Filter
by Fabian Khateb, Montree Kumngern, Tomasz Kulej and Jiri Vavra
Appl. Sci. 2025, 15(7), 3471; https://doi.org/10.3390/app15073471 - 21 Mar 2025
Cited by 1 | Viewed by 470
Abstract
This paper presents a low-voltage, low-power current differencing transconductance amplifier (CDTA) utilizing the bulk-driven MOS transistor technique in the subthreshold region for reduced voltage and power consumption. The proposed CDTA includes a z-copy terminal, which enhances its functionality in current-mode circuit applications. Designed [...] Read more.
This paper presents a low-voltage, low-power current differencing transconductance amplifier (CDTA) utilizing the bulk-driven MOS transistor technique in the subthreshold region for reduced voltage and power consumption. The proposed CDTA includes a z-copy terminal, which enhances its functionality in current-mode circuit applications. Designed in the Cadence Virtuoso environment using 0.18 µm CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC), the amplifier operates with a supply voltage of 0.45 V and consumes 328 nW of power, with a bias current set to 10 nA. The current bandwidth and offset of the CDTA are 35 kHz and 0.3 nA, respectively. To demonstrate its performance, the CDTA is applied in a current-mode universal filter, which can realize low-pass, band-pass, high-pass, band-stop, and all-pass responses within a single topology. This design eliminates issues related to inverting input signals, input signal matching, or the need for multiple input signals. Additionally, the natural frequency of these filtering functions can be electronically controlled. The low-pass filter achieves a dynamic range of 61 dB, with a total harmonic distortion of 0.8%. Full article
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13 pages, 5166 KiB  
Article
Multifunctional Aramid Nanofiber/MXene/Aramid Fiber Composite Fabric with Outstanding EMI Shielding Performance
by Qianyi Wang, Ying Wang, Changmei Sun, Ying Zhang, Rongjun Qu and Yunxia Shen
Coatings 2025, 15(3), 354; https://doi.org/10.3390/coatings15030354 - 19 Mar 2025
Cited by 1 | Viewed by 661
Abstract
Developing aramid fiber (AF) with electromagnetic interference (EMI) shielding properties is of significant importance for expanding their applications in the military, aerospace, and industrial sectors. Current research on the EMI shielding properties of AF often encounters challenges such as structural damage to the [...] Read more.
Developing aramid fiber (AF) with electromagnetic interference (EMI) shielding properties is of significant importance for expanding their applications in the military, aerospace, and industrial sectors. Current research on the EMI shielding properties of AF often encounters challenges such as structural damage to the fibers and inadequate shielding performance. In this study, we used vacuum-assisted filtration technology to sequentially deposit aramid nanofiber (ANF) and MXene onto the surface of AF fabric, thus preparing ANF/MXene/AF composite fabric. MXene, with its large specific surface area and excellent electrical conductivity, was used in conjunction with ANF, which acts as an intermediate layer to effectively filter MXene and improve the interfacial adhesion between the MXene and AF. The results showed that, under the combined effects of reflection and absorption, the A20M40 sample achieved an average EMI SE of 78.1 dB in the X-band, meeting the EMI shielding requirements for both civilian and military applications. Additionally, the ANF/MXene/AF composite fabric exhibited excellent electrothermal conversion performance (surface temperature reached 120 °C within 32 s under 5 V) and photothermal performance (surface temperature reached 85 °C after 145 s of exposure to 1500 W/m2 light intensity). Furthermore, the flame-retardant performance of the ANF/MXene/AF composite fabric was significantly enhanced compared to the pure AF fabric due to the physical barrier effect of MXene. Full article
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13 pages, 6646 KiB  
Article
Advanced Magnetic Coupling Resonance Model Optimization for Enhanced Wireless Power Transfer
by Huixin Zhang, Sichen Liu and Jialong Liu
Electronics 2025, 14(6), 1152; https://doi.org/10.3390/electronics14061152 - 14 Mar 2025
Cited by 1 | Viewed by 905
Abstract
To address the demand for improved electrical performance parameters in the field of magnetically coupled resonant wireless power transfer (MCR-WPT), this paper conducts an in-depth theoretical simulation and validation of key processes, including electrical signal isolation, inversion, phase detection, and rectification filtering. This [...] Read more.
To address the demand for improved electrical performance parameters in the field of magnetically coupled resonant wireless power transfer (MCR-WPT), this paper conducts an in-depth theoretical simulation and validation of key processes, including electrical signal isolation, inversion, phase detection, and rectification filtering. This study proposes and verifies the impact of transmitter and receiver coil structural parameters on transmission performance, leading to an optimized design. Additionally, a fully digital phase-locked loop (PLL) is implemented to achieve the full-band frequency locking and tracking of wireless power oscillation transmission, ensuring continuous resonance during power transfer for maximum efficiency. Through theoretical simulations and experimental validation, results confirm that under optimized coil structures and frequency-locking technology, transmission efficiency can be improved by up to 13% compared to conventional methods, with an increase of 8 W in transmitted power. The optimized system has demonstrated long-term operational stability and reliability, providing valuable insights for advancing applications in the field. Full article
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12 pages, 3771 KiB  
Article
Reflective Semiconductor Optical Amplifier Chip with Low Ripple for C-Band External Cavity Narrow-Linewidth Laser
by Shaojie Li, Haiyang Yu, Haotian Bao, Menghan Ren, Jianguo Liu, Zeqiu Liu and Yulian Cao
Photonics 2025, 12(3), 193; https://doi.org/10.3390/photonics12030193 - 25 Feb 2025
Viewed by 856
Abstract
The main characteristic of a reflective semiconductor optical amplifier chip (RSOA) is that it does not generate optical resonance under electric pumping and maintains the operation state of spontaneous emission. In this paper, a Nb2O5/SiO2/Nb2O [...] Read more.
The main characteristic of a reflective semiconductor optical amplifier chip (RSOA) is that it does not generate optical resonance under electric pumping and maintains the operation state of spontaneous emission. In this paper, a Nb2O5/SiO2/Nb2O5/SiO2 (four-layer Nb2O5/SiO2) film system is employed as the coating material for the output facet of the RSOA. The 3 dB spectral width of the spontaneous emission spectrum from this RSOA reaches 79.4 nm, with a ripple of less than 1 dB occurring across this wavelength range. Notably, around the 1550 nm wavelength, the ripple is as low as 0.5 dB. This represents the best performance reported for this type of chip. The RSOA is packaged as a narrow-linewidth external cavity laser. Under test conditions of 25 °C and 180 mA, the external cavity laser produces an output power of 12.6 mW and achieves a linewidth of 299.8 Hz. Furthermore, by adjusting the Fabry–Pérot (FP) standard cavity, filtering, and other external cavity parameters, the lasing spectrum of the narrow-linewidth external cavity laser based on the RSOA is tunable across a wavelength range from 1535.83 nm to 1561.42 nm, which shows the usability of the proposed ROSA for a C-band external cavity narrow-linewidth laser. Full article
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16 pages, 7997 KiB  
Article
A 12 dBm B1dB N-Path Notch Filter for Transmitter Leakage Suppression in Wideband Receiver
by Xujia Luo, Shihao Qi, Shang Xu, Haotian Zhang, Qinfen Xu, Guoan Wu and Lamin Zhan
Electronics 2025, 14(5), 854; https://doi.org/10.3390/electronics14050854 - 21 Feb 2025
Viewed by 733
Abstract
This paper proposes an N-path notch filter while offering high blocker power handling for co-address transmitter (TX) leakage suppression in a wideband receiver. The filter includes an impedance flip-flop over an adjustable transmission line in a block band, achieving a 12.3 to 13.6 [...] Read more.
This paper proposes an N-path notch filter while offering high blocker power handling for co-address transmitter (TX) leakage suppression in a wideband receiver. The filter includes an impedance flip-flop over an adjustable transmission line in a block band, achieving a 12.3 to 13.6 dBm blocker 1 dB compression point (B1dB) and a 12.8 to 14 dBm 1 dB compression point (P1dB) in a 130 nm CMOS SOI process. This design effectively suppresses broadband interference in the receiving system and improves the dynamic range and linearity of the receiver (RX) channel. The filter consumes 186 to 242 mW in the 0.3 GHz to 0.6 GHz band and has an active chip area of 0.21 mm2, providing maximum rejection >25 dB, with a passband third-order input intercept point (IIP3) of 22 to 25.2 dBm. The design of the adjustable transmission line structure is analyzed to reduce the insertion loss in terms of impedance and to achieve a 1.7 to 2 dB insertion loss shortfall over the RF tuning range. Full article
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17 pages, 9268 KiB  
Article
Analog Gaussian-Shaped Filter Design and Current Mode Compensation for Dot-Matrix TSP Readout Systems
by Seunghoon Ko
Appl. Sci. 2025, 15(4), 1845; https://doi.org/10.3390/app15041845 - 11 Feb 2025
Cited by 1 | Viewed by 841
Abstract
In-cell touch and display integrated panels, along with their integrated readout systems, are widely adopted in mobile devices for their cost-effectiveness and compact design. This paper proposes an analog Gaussian-shaped filter and a current mode compensation technique for dot-matrix Touch Screen Panel (TSP) [...] Read more.
In-cell touch and display integrated panels, along with their integrated readout systems, are widely adopted in mobile devices for their cost-effectiveness and compact design. This paper proposes an analog Gaussian-shaped filter and a current mode compensation technique for dot-matrix Touch Screen Panel (TSP) readout systems. Specifically, this article presents a noise management strategy for both intrinsic and external noise, offering simulation guidelines for determining intrinsic circuit noise levels in relation to scan time and enhancing external noise immunity through the Gaussian-shaped filter response. The system achieved an intrinsic SNR of 66 dB with a 200 kHz TSP driving frequency and a 160 μs scan time, while the 4-bit quantized Gaussian coefficients filter provided 33 dB noise suppression for out-of-band noise. The compensation error in the dot-matrix capacitance compensation was measured at 1.24 pF, which corresponds to a 0.078% deviation. The simulated power consumption of the proposed readout system is 24 mW, with a layout area of 1.017 mm2 for the 10-channel readout front-end. Full article
(This article belongs to the Special Issue Advanced Research on Integrated Circuits and Systems)
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31 pages, 12478 KiB  
Article
An Improved Multi-Threshold Clutter Filtering Algorithm for W-Band Cloud Radar Based on K-Means Clustering
by Zhao Shi, Lingjiang Huang, Fengyuan Wu, Yong Lei, Huiying Wang and Zhiya Tang
Remote Sens. 2024, 16(24), 4640; https://doi.org/10.3390/rs16244640 - 11 Dec 2024
Cited by 1 | Viewed by 928
Abstract
This study investigates the application of an improved multi-threshold method based on the K-means algorithm for clutter filtering in W-band cloud and fog radar observations. Utilizing W-band millimeter-wave cloud and fog radar data collected from March to July 2023 in the Qingdao area, [...] Read more.
This study investigates the application of an improved multi-threshold method based on the K-means algorithm for clutter filtering in W-band cloud and fog radar observations. Utilizing W-band millimeter-wave cloud and fog radar data collected from March to July 2023 in the Qingdao area, a dataset of cloud and fog echo of different types was constructed and statistically analyzed. Subsequently, a multi-threshold clutter filtering method was proposed to identify and eliminate abnormal interferences such as noise spikes, radial interference, and suspended matter clutter. This method employs the basic data and spatiotemporal information from the cloud radar as feature variables for K-means clustering and dynamically adjusts thresholds based on the clustering results. The clutter-filtered data were further used for the verification analysis of cloud and fog identification. The results demonstrate that the proposed multi-threshold method effectively removes clutter and significantly reduces its impact on cloud and fog echo under weather conditions of clouds, fog, and coexisting cloud–fog, while controlling the loss of cloud and fog echo within the required accuracy range. Full article
(This article belongs to the Special Issue Synergetic Remote Sensing of Clouds and Precipitation II)
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