Search Results (259)

In this study, a UVC photodetector (PD) was fabricated by incorporating CsI into a conventional double-cation perovskite (FAMAPbI₃) to enhance its stability. The device utilized a methylammonium iodide post-treatment solution to fabricate CsFAMAPbI₃ perovskite thin films, which functioned as the primary light-absorbing layer in an NIP structure composed of n-type SnO₂ and p-type spiro-OMeTAD. Perovskite films were fabricated and analyzed as a function of the Cs concentration to optimize the Cs content. The results demonstrated that Cs doping improved the crystallinity and phase stability of the films, leading to their enhanced electron mobility and photodetection performance. The UVC PD with an optimum Cs concentration exhibited a responsivity of 58.2 mA/W and a detectivity of 3.52 × 10¹⁴ Jones, representing an approximately 7% improvement over conventional structures. Full article

There is considerable interest in broadband nanomaterials, particularly transparent semiconductor oxides, within both fundamental research and technological applications. Historically, it has been considered that the variation in dopant concentration during the synthesis of semiconductor materials is a crucial factor in activating and/or modulating the optical and structural properties, particularly the bandgap and the parameters of the unit cell, of semiconductor oxides. Recently, tin oxide has emerged as a key material due to its excellent structural properties, optical transparency, and various promising applications in optoelectronics. This study utilized the ultrasonic spray pyrolysis technique to synthesize aluminum-doped tin oxide (ATO) thin films on quartz and polished single-crystal silicon substrates. The impact of varying aluminum doping levels (0, 2, 5, and 10 at. %) on morphology and structural and optical properties was examined. The ATO thin films were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmittance spectroscopy. SEM images demonstrated a slight reduction in the size of ATO nanoparticles as the aluminum doping concentration increased. XRD analysis revealed a tetragonal crystalline structure with the space group P42/mnm, and a shift in the XRD peaks to higher angles was noted with increasing aluminum content, indicating a decrease in the crystalline lattice parameters of ATO. The transmittance of the ATO films varied between 75% and 85%. By employing the transmittance spectra and the established Tauc formula the optical bandgap values of ATO films were calculated, showing an increase in the bandgap with higher doping levels. These findings were thoroughly analyzed and discussed; additionally, an effort was made to clarify the contradictory analyses present in the literature and to identify a doping range that avoids the onset of a secondary phase. Full article

The tin dioxide (SnO₂) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen–hydrogen mixed atmosphere on their surface morphology, optical behavior, and electrical performance. The SnO₂ films were characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall effect measurements. With increasing annealing temperatures, the SnO₂ films exhibited enhanced crystallinity, a higher oxygen vacancy (O_V) peak area ratio, and improved mobility and carrier concentration. These enhancements make the annealed SnO₂ films highly suitable as electron transport layers (ETLs) in perovskite solar cells (PSCs), providing practical guidance for the design of high-performance PSCs. Full article

Tin(II) sulfide(SnS)/titanium(IV) oxide (TiO₂) heterostructure thin films were prepared by radio-frequency magnetron sputtering to investigate the enhancement effect of the formed heterojunction on the photocatalytic performance. By adjusting the sputtering time to vary the thickness of the SnS layer, the crystallinity and light-absorption properties of the light-absorbing layer and the quality of the heterojunction interface were effectively controlled, thereby optimizing the fabrication process of the heterojunction. It was found that when the SnS layer thickness was 244 nm and the TiO₂ layer thickness was 225 nm, the heterostructure film exhibited optimal photoelectrochemical performance, generating the highest photocurrent of 3.03 µA/cm² under visible light, which was 13.8 times that of a pure TiO₂ film and 2.4 times that of a pure SnS film of the same thickness. Additionally, it demonstrated the highest degradation efficiency for methylene blue dye. The improved photoelectrochemical performance of the SnS/TiO₂ heterostructure film can be primarily attributed to the following: (1) the incorporation of narrow-bandgap SnS effectively broadens the light-absorption range, improving visible-light harvesting; (2) the staggered band alignment between SnS and TiO₂ forms a type-II heterojunction, significantly enhancing the charge carrier separation and transport efficiency. The present work demonstrated the feasibility of magnetron sputtering for constructing high-quality SnS/TiO₂ heterostructures, providing insights into the design and fabrication of photocatalytic heterojunctions. Full article

Kesterite (CZTS/CZTSSe) thin-film solar cells are considered an eco-friendly, earth-abundant, and low-cost photovoltaic technology that can fulfill our future energy needs. Due to its outstanding properties including tunable bandgap and high absorption coefficient, the power conversion efficiency (PCE) has reached over 14%. However, toxic cadmium sulfide (CdS) is commonly used as an n-type buffer layer in kesterite thin-film solar cells (KTFSCs) to form a better p–n junction with the p-type CZTS/CZTSSe absorber. In addition to its toxicity, the CdS buffer layer shows parasitic absorption at low wavelengths (400–500 nm) owing to its low bandgap (2.4 eV). For the last few years, several efforts have been made to substitute CdS with an eco-friendly, Cd-free, cost-effective buffer layer with alternative large-bandgap materials such as ZnSnO, Zn (O, S), In₂Se₃, ZnS, ZnMgO, and TiO₂, which showed significant advances. Herein, we summarize the key findings of the research community using a Cd-free buffer layer in KTFSCs to provide a current scenario for future work motivating researchers to design new materials and strategies to achieve higher performance. Full article

Thin TiO₂–SnO₂ nanocomposite films with high gas sensitivity to NO₂ were synthesized by oxidative pyrolysis and comprehensively studied. The composite structure and quantitative composition of the obtained film nanomaterials have been confirmed by X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy, which causes the presence of n-n heterojunctions and provides improved gas-sensitive properties. The sensor based on the 3TiO₂–97SnO₂ film has the maximum responses, which is explained by the existence of a strong surface electric field formed by large surface potentials in the region of TiO₂–SnO₂ heterojunctions detected by the Kelvin probe force microscopy method. Exposure to low-intensity radiation (no higher than 0.2 mW/cm², radiation wavelength—400 nm) leads to a 30% increase in the sensor response relative to 7.7 ppm NO₂ at an operating temperature of 200 °C and a humidity of 60% RH. At room temperature (20 °C), under humidity conditions, the response is 1.8 when exposed to 0.2 ppm NO₂ and 85 when exposed to 7.7 ppm. The lower sensitivity limit is 0.2 ppm NO₂. The temporal stability of the proposed sensors has been experimentally confirmed. Full article

The Al-Sb co-doped SnO₂ composite thin films were prepared by the sol–gel spin-coating method. The structure, morphology, optical and electrical properties of the samples were investigated using XRD, XPS, SEM, UV-Vis spectroscopy, and Hall effect tester, respectively. It was found that when the aluminum doping amount was 15 at%, the resistivity of the sample was the lowest, and the overall optoelectronic performance was the best. Moreover, the Al-SnO₂ composite thin film transformed from an n-type semiconductor to a p-type semiconductor. When Al and Sb were co-doped, the carrier concentration increased significantly from 4.234 × 10¹⁹ to 6.455 × 10²⁰. Finally, the conduction type of the Al-Sb-SnO₂ composite thin film changed from p-type to n-type. In terms of optical performance, the transmittance of the Al-Sb co-doped SnO₂ composite thin films in the visible light region was significantly improved, reaching up to 80% on average, which is favorable for applications in transparent optoelectronic devices. Additionally, the absorption edge of the thin films exhibited a blue-shift after co-doping, indicating an increase in the bandgap energy, which can be exploited to tune the light-absorption properties of the thin films for specific photonic applications. Full article

In this paper, we investigated fractal cluster structures of colloidal particles in tin dioxide films obtained from lyophilic film-forming systems SnCl₄/EtOH/NH₄OH with different pH levels. It was revealed that at the ratio Sn > Cl₂ > O₂, N₂ = 0, and pH = 1.42, the growth of cross-shaped and flower-shaped structures of various sizes from several μm to tens of μm is observed. At the ratio Cl₂ > Sn > O₂ > N₂ and pH = 1.44, triangular and hexagonal structures are observed, the sizes of which are on the order of several tens of micrometers. The growth of hexagonal structures is probably affected by the presence of nitrogen in the film, according to the elemental analysis data. At the ratio Sn > Cl₂ > O₂ > N₂ and solution pH of 1.49, the growth of hexagonal and cross-shaped structures is observed, whereas flower-shaped structures are not observed. Hierarchical flower-like and cross-shaped structures are fractal. The shape of microstructures is directly related to the shape of the elementary cells of SnO₂ and NH₄Cl. A direct dependence of the formation of hierarchical structures on the volume of ammonium hydroxide additive was found. This allows for controlling the shape and size of the synthesized structures when changing the ratio of the initial precursors and influencing the final physicochemical characteristics of the obtained samples. Full article

Synthesis and characterization of undoped and samarium-doped CuO–SnO₂:F thin films using the spray pyrolysis technique are presented. The effect of the samarium doping level on the physical properties of these films was thoroughly analyzed. X-ray diffraction patterns proved the successful synthesis of pure CuO–SnO₂:F thin films, free from detectable impurities. The smallest crystallite size was observed in 6% Sm-doped CuO–SnO₂:F thin films. The 6% Sm-doped CuO–SnO₂films demonstrated an increasedsurface area of 40.6 m²/g, highlighting improved textural properties, which was further validated by XPS analysis.The bandgap energy was found to increase from 1.90 eV for undoped CuO–SnO₂:F to 2.52 eV for 4% Sm-doped CuO–SnO₂:F, before decreasing to 2.03 eV for 6% Sm-doped CuO–SnO2:F thin films. Photoluminescence spectra revealed various emission peaks, suggesting a quenching effect. A numerical simulation of a new solar cell based on FTO/ZnO/Sm–CuO–SnO₂:F/X/Mo was carried out using Silvaco Atlas software, where X represented the absorber layer CIGS, CdTe, and CZTS. The results showed that the solar cell with CIGS as the absorber layer achieved the highest efficiency of 15.98. Additionally, the thin films demonstrated strong photocatalytic performance, with 6% Sm-doped CuO–SnO₂:F showing 86% degradation of ampicillin after two hours. This comprehensive investigation provided valuable insights into the synthesis, properties, and potential applications of Sm-doped CuO–SnO₂ thin films, particularly for solar energy and pharmaceutical applications. Full article

As the typical representative of amorphous oxide semiconductors (AOS), quaternary indium gallium zinc oxide (IGZO) has been applied as the active layer of thin-film transistors (TFTs), but their mobility is still low (usually ~10 cm²/Vs). IGTO is reported to have larger mobility owing to the addition of Tin (Sn) in IZO. So, whether Sn doping can increase the optoelectronic properties of IGZO is a new topic worth studying. In this study, four series of quinary InGaZnSnO (IGZTO) oxide thin films were deposited on glass substrates using a high-purity IGZTO (In:Ga:Zn:Sn:O = 1:0.5:1.5:0.25:x, atomic ratio) ceramic target by RF magnetron sputtering. The effects of fabrication parameters (sputtering power, argon gas flow, and target-to-substrate distance) and film thickness on the microstructure, optical, and electrical properties of IGZTO thin films were investigated. The results show that all IGZTO thin films deposited at room temperature (RT) are amorphous and have a smooth and uniform surface with a low roughness (RMS of 0.441 nm, RA of 0.332 nm). They exhibit good average visible light transmittance (89.02~90.69%) and an optical bandgap of 3.47~3.56 eV. When the sputtering power is 90 W, the argon gas flow rate is 50 sccm, and the target-to-substrate distance is 60 mm, the IGZTO films demonstrate optimal electrical properties: carrier concentration (3.66 × 10¹⁹ cm⁻³), Hall mobility (29.91 cm²/Vs), and resistivity (0.54 × 10⁻² Ω·cm). These results provide a valuable reference for the property modulation of IGZTO films and the potential application in optoelectronic devices such as TFTs. Full article

Physical insight into a material can be first gained by its color, as the reflectance spectrum of an object reflects its microstructure and complex refractive indices. Here, we present a comprehensive overview of electrodynamics and optics related to reflectance spectra and color. We provide an open-source Python code for simulating reflectance spectra and extracting color values. The validity and applicability of the code are demonstrated through a comparative analysis with both the literature and experimental data. For SnO₂ and ZnO thin films deposited on SiO₂/Si substrates using rf sputtering, the Python code and simulation predict color variations with the film thickness and effectively capture their angular dependence. This code will help in understanding and making use of color-related phenomena. It can be further used and developed for various purposes, particularly machine learning, which requires extensive spectral and color data for model training. Full article

Notwithstanding the success of SnO₂ as a fundamental material for gas sensing, it has often been criticized for its cross-sensitivity and high operational temperatures. Therefore, in this study, RF-sputtered SnO₂ thin films were subjected to a modification process through doping with a rare earth element, dysprosium (Dy), and subsequently deposited onto two different types of substrates: alumina and glass substrates. All thin films underwent a comprehensive series of characterizations aimed at ensuring their suitability as NO₂ sensors. The dysprosium doping levels ranged from 1 to 7 wt.% in increments of 2% (wt.%). X-ray patterns showed that all deposited films exhibited the tetragonal rutile structure of SnO₂. The optical band gap energy (Eg) increased with Dy doping, while the Urbach energy decreased with Dy doping. Field emission scanning electron microscopy (FESEM) revealed highly compacted grainy surfaces with high roughness for alumina substrate thin films, which also exhibited higher resistivity that increased with the levels of Dy doping. Energy-dispersive X-ray spectroscopy (EDX) analyses confirmed the stoichiometry of both types of thin films. Gas sensing tests were conducted at different operating temperatures, where the highest response to nitrogen dioxide, over 42%, was recorded for the higher dopant level at 250 °C. Moreover, the sensor’s selectivity toward nitrogen dioxide traces was evaluated by introducing interfering gases at higher concentrations. However, the sensors showed also significant responses when operated at room temperature. Also, we have demonstrated that higher stability is related to the temperature of the sensors and Dy ratio. Hence, a detailed discussion of the gas-sensing mechanisms was undertaken to gain a deeper insight into the NO₂ sensitivity exhibited by the Dy-doped SnO₂ layer. Full article

Cortisol is a pivotal hormone regulating stress responses and is linked to various health conditions, making precise and continuous monitoring essential. Despite their non-invasive nature, conventional cortisol detection methods often suffer from inadequate sensitivity and reliability at low concentrations, limiting their diagnostic utility. To address these limitations, this study introduces a novel paradigm for high sensitivity cortisol detection using field-effect transistor (FET) sensors with dual-gate (DG) structures. The proposed sensor platform enhances sensitivity through capacitive coupling without requiring external circuits. Cortisol detection performance was evaluated by immobilizing monoclonal antibodies activated via 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide and N-hydroxysuccinimide onto a SnO₂ thin film-based extended-gate. The results revealed a sensitivity of 14.3 mV/dec in single-gate mode, which significantly increased to 243.8 mV/dec in DG mode, achieving a detection limit of 276 pM. Additionally, the reliability and stability of the sensor were validated by evaluating drift effects, confirming its ability to provide accurate detection even in artificial saliva environments containing interfering substances. In conclusion, the DG-FET-based cortisol detection approach developed in this study significantly outperforms conventional FET-based methods, enabling precise monitoring at ultra-low concentrations. This approach holds significant potential for diverse bioassays requiring high sensitivity and reliability in complex environments. Full article

This research is on the structural, optical, and electrical properties of SnO₂ and ZnO thin films, which are increasingly used in many electronic devices, including gas sensors, light-emitting diodes, and solar cells. For the various applications, it is essential to accurately determine the band gap energy, as it controls the optical and electrical behavior of the material. However, there is no single method for its determination; rather, different approximations depend on the crystalline quality and the doping level because these modify the energy band structure of the semiconductor. With the aim of analyzing the various approaches, SnO₂ and ZnO films were prepared by sputtering on unheated glass substrates and subsequently annealed in N₂ at various temperatures between 250 °C and 450 °C. These samples showed different crystallite sizes, absorption coefficients, and free carrier concentrations depending on the material and the annealing temperature. Analysis of the results shows that the expression developed for amorphous materials underestimates the band gap value, and the so-called unified method tends to overestimate it, while the equations for perfect or heavily doped crystals give band gap energies more consistent with the doping level, regardless of the crystalline quality of the films. Full article

Zinc–tin oxide (ZTO) thin films (ZnO)_x(SnO₂)_1−x with different material composition x (0 < x < 1) are deposited by spin coating on glass substrates at room temperature. The Differential Scanning Calorimetry (DSC) data of the precursor compounds show gradual phase transitions up to 480 °C. These data are used for an appropriate regime for thermal annealing of the layers. X-ray photoelectron spectroscopy (XPS) data show mixed oxide compound formation in states Zn²⁺, Sn⁴⁺ and O²⁻ of the constituents. Optical investigation manifests high transmittance above 80% in the visible spectral range and an optical band gap of 3.3–3.7 eV. The work functions vary between 4.1 eV and 5 eV, depending on the annealing, with deviations less than 1% for surface 1 mm² scans. Stack devices ITO/ZTO/metal with different metal contacts are formed. The I–V (current–voltage) measurements of the fabricated stacks exhibit Ohmic or nonlinear behavior, depending on the material composition and the work function levels. Full article